• 분석과학
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• 제17권2호
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• pp.117-129
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• 2004

본 연구에서는 극성이 높고, 휘발성이 낮아 GC나 GC/MS로 분석이 곤란한 환경매체 중의 아미트롤을 LC/ESI/MS를 사용하여 분석한 결과 다음과 같은 결론을 얻었다. 분자량이 84인 아미트롤은 LC/ESI/MS 방식에서는 m/z 85인$(M+H)^+$형태로 나타났으며, 피크강도는 30V에서 (SIR mode) 최대를 나타내었다. 질량 스펙트럼 비를 정성확인에 적용하기 위하여 실험한 결과 아미트롤은 m/z 85 와 m/z 58 이온으로 나타났으며, 50V에서 이 비는 1 : 7.03~7.58 로 나타났다. 동위원소 비를 이용한 정성확인은 isotope MS나 HR/MS가 주로 사용되나, 본 연구에서는 정성확인을 위한 보조수단으로 이용하고자 실험한 결과 아미트롤의 동위원소는 $86([M+H])^+$ 형태로 나타났으며, 시료에서(30V) m/z 85와 m/z 86의 질량 스펙트럼 비는 27.1~28.6 : 1(이론적 비 26.6 : 1)로 나타났다. 단계별 표준액을 시료의 전 처리 방법과 동일하게 처리하여 분석한 검량선의 직선성은 $y=1.09354e^6X+26947.2$이었으며, $r^2=0.99$로 나타났다. 분석의 정도관리를 위한 회수율검정과 반복 재현성을 알아보기 위한 실험에서 수질시료의 회수율은 77.64~83.44%, 토양시료에서는71.11~79.44%로 나타났으며, 각 농도 단계별 반복(5회)실험결과 상대표준편차 값은 10%이하를 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.124-125
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• 2007

Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the polycrystal source of $CdGa_2Se_4$ at $630^{\circ}C$ prepared from horizontal electric furnace. The photocurrent and the absorption spectra of $CdGa_2Se_4$/SI(Semi-Insulated) GaAs(100) are measured ranging from 293K to 10K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$, obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 2.6400 eV - $(7.721{\times}10^{-4}\;eV/K)T^2$/(T + 399 K). Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy$({\Delta}cr)$ and the spin-orbit splitting energy$({\Delta}so)$ for the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-},\;B_{1^-},\;and\;C_{11^-}$ exciton peaks.

• 한국음향학회:학술대회논문집
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• 한국음향학회 2000년도 학술발표대회 논문집 제19권 2호
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• pp.231-234
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• 2000

In relation to a non-destructive evaluation of irradiation damage of micro-structure of interstitial, void and dislocation, the changes in the hysteresis loop and Barkhausen noise amplitude and the harmonics frequency due to neutron irradiation were measured and evaluated. The Mn-Mo-Ni low alloy steel of reactor pressure vessel was irradiated to a neutron fluence of $2.3\times10^{19}n/cm^2$ $(E\ge1MeV)$ at $288^{\circ}C.$The saturation magnetization of neutron irradiated metal did not change. Neutron irradiation caused the coercivity to increase, whereas susceptibility to decrease. The amplitude of Barkhausen noise parameters associated with the domain wall motion were decreased by neutron irradiation. The spectrum of Barkhausen noise was analyzed with an applied frequency of 4Hz and 8Hz, and a sampling time of 50 $\mu$ sec and 20 $\mu$ sec. The harmonic frequency of Joule effect shows 4Hz, 8Hz, 12Hz and 16Hz reflected from an unirradiated specimen. On the contrary, the harmonic frequency disappeared for the irradiated specimen. Harmonic frequency of induced voltage of sinusoidal magnetic field And Spectrum of Barkhausen noise on material is determined.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.237-242
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• 2001

The stochiometric mix of evaporating materials for the CuGaSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuGaSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 610$^{\circ}C$ and 450$^{\circ}C$, respectively The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuGaSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting Δ So and the crystal field splitting ΔCr were 91 meV and 249.8 meV at 20 K, respectively. From the Photoluminescence measurement on CuGaSe$_2$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy 7f neutral acceptor bound excision were 8 meV and 35.2 meV, respectivity. By Haynes rule, an activation energy of impurity was 355.2 meV

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.167-170
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• 2001

The stochiometric mix of evaporating materials for the CdGa$_2$Se$_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CdGa$_2$Se$_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 630$^{\circ}C$ and 420$^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CdGa$_2$Se$_4$ single crystal thin films measured from Hall erect by van der Pauw method are 8.27x10$\^$17/ cm$\^$-3/, 345 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the Photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on CdGa$_2$Se$_4$ single crystal thin film, we observed free excition (E$\_$X/) existing only high quality crystal and neutral bound exiciton (D$\^$0/,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excision were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV,

• 대한전자공학회논문지SD
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• 제39권5호
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• pp.8-15
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• 2002

나선형 인덕터를 이용한 VCO를 MOSIS의 HP 0.5㎛ CMOS 공정으로 최적 설계하고 제작하였다. 나선형 인덕터의 SPICE 모델을 이용하여, Q지수(qualify factor)를 동작 주파수에서 최대화하기 위하여 레이아웃 변수인 금속선 폭, 회전수, 내경, 간격 등을 최적화하였다. 만약 동작주파수가 2㎓, 인덕턴스가 약 3nH이고, 금속선 두께 0.8㎛, 절연 산화막 두께 3㎛를 사용하는 MOSIS HP 0.5㎛ CMOS 공정의 경우 금속선 폭은 20 정도로 하는 것이 Q지수를 최대로 함을 확인하였다. 이렇게 최적화된 나선형 인덕터를 LC 공진 탱크에 사용하여 VCO를 설계, 제작 및 측정을 하였다. 측정은 온웨이퍼(on-wafer)상에서 HP8593E 스펙트럼 에널라이저를 이용하였다. 발진신호의 주파수는 약 1.61㎓이고, 컨트롤전압이 0V -2V변화할 때 발진주파수는 약 250㎒(15%) 변화하였으며, 출력 스펙트럼으로부터 중심주파수 1.61㎓에서 offset 주파수가 600㎑ 때의 위상잡음이 -108.4㏈c/㎐ 였다.

• Nuclear Engineering and Technology
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• 제48권1호
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• pp.55-63
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• 2016

Calculation of the core neutronic parameters is one of the key components in all nuclear reactors. In this research, the energy spectrum and spatial distribution of the neutron flux in a uranium target have been calculated. In addition, sensitivity of the core neutronic parameters in accelerator-driven subcritical advanced liquid metal reactors, such as electron beam energy ($E_e$) and source multiplication coefficient ($k_s$), has been investigated. A Monte Carlo code (MCNPX_2.6) has been used to calculate neutronic parameters such as effective multiplication coefficient ($k_{eff}$), net neutron multiplication (M), neutron yield ($Y_{n/e}$), energy constant gain ($G_0$), energy gain (G), importance of neutron source (${\varphi}^*$), axial and radial distributions of neutron flux, and power peaking factor ($P_{max}/P_{ave}$) in two axial and radial directions of the reactor core for four fuel loading patterns. According to the results, safety margin and accelerator current ($I_e$) have been decreased in the highest case of $k_s$, but G and ${\varphi}^*$ have increased by 88.9% and 21.6%, respectively. In addition, for LP1 loading pattern, with increasing $E_e$ from 100 MeV up to 1 GeV, $Y_{n/e}$ and G improved by 91.09% and 10.21%, and $I_e$ and $P_{acc}$ decreased by 91.05% and 10.57%, respectively. The results indicate that placement of the Np-Pu assemblies on the periphery allows for a consistent $k_{eff}$ because the Np-Pu assemblies experience less burn-up.

• Macromolecular Research
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• 제17권5호
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• pp.319-324
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• 2009

A new $\pi$-conjugated polymer, poly[(2-methoxy-(5-(2-(4-oxyphenyl)-5-phenyl-1,3,4-oxadiazole)-hexyloxy))-1,4-pheny1ene-1,2-etheny1ene-alt-(10-hexyl-3,7-phenothiazine )-1,2-ethenylene] (PTOXDPPV), was synthesized by the Heck coupling reaction. The electron transporting unit, conjugated 1,3,4-oxadiazo1e (OXD), is attached on the main chain via linear 1,6-hexamethylenedioxy chain. The band gap and photoluminescence (PL) maximum of PTOXDPPV are 2.35 eV and 565 nm, respectively. These values are very close to those of po1y[(2,5-didecyloxy-1,4-phenylene-1,2-etheny1ene )-alt-(l0-hexyl-3,7-phenothiazine)-1,2-ethenylene] (PTPPV), which does not have OXD pendant. The estimated HOMO energy level of PTOXDPPV was -4.98 eV, which is very close to that of PTPPV (-4.91 eV). The maximum wavelength of EL device based on PTOXDPPV and PTPPV appeared at 587 and 577 nm, respectively. In the PL and EL spectrum, the emission from OXD pendant was not observed. This indicates that the energy transfer from OXD pendants to main chain is occurred completely. The EL device based on PTOXD-PPV (ITO/PEDOT/PTOXDPPV/AI) has an efficiency of 0.033 cd/A, which is significantly higher than the device based on PTPPV (ITO/PEDOT/PTPPV/AI) ($4.28{\times}10^{-3}\;cd/A$). From the results, we confirm that the OXD pendants in PTOXDPPV facilitate hole-electron recombination processes in the emissive layer effectively.

• 한국재료학회지
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• 제12권7호
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• pp.587-590
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• 2002

A silver indium sulfide ($AgInS_2$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the literature. The grown $AgInS_2$ epilayer has found to be a chalcopyrite structure and evaluated to be high quality crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks are ascribed to the band-to-band transition. The valence band splitting of $AgInS_2$ was investigated by means of the photocurrent measurement. The crystal field splitting, $\Delta_{cr}$ , and the spin orbit splitting, $\Delta_{so}$ , have been obtained to be 0.150 eV and 0.009 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also, the temperature dependence of the energy band gap, $E_{g}$(T), was determined.d.

• 한국결정성장학회지
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• 제7권1호
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• pp.70-75
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• 1997

Electron beam 증착법을 보완하여 GaAs(100)기판위에 cubic(zinc blende) CdSe 에피충을 성장시켜 그의 특성을 조사하였다 .. CdSe 에피충의 격자 상수는 6.077 A였으며, 배향 성은 ECP 패번에 의하여 확인되고 결정성은 DCXR curve로 관찰하였다. 상온에서 측정된 H Hall data로는 에피충의 운반자 농도와 이통도는 각각 1018cm-3, 102cm2N' see 정도임을 알았 고 30 K에서 측정한 PC spectra peak는 cubic CdSe의 free exciton에 기인된 것으로 1.746 e eV에서 예리하게 나타냐고 있음을 보여주고 있다.