• Bulletin of the Korean Space Science Society
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• 2008.10a
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• pp.31.2-31.2
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• 2008

We present the results offar ultraviolet (FUV, 1350-1750 ${\AA}$) auroral observations made by the Far-ultraviolet IMaging Spectrograph (FIMS) instrument on the Korean microsatellite STSAT-1. The instrument was capable of resolving spatial structures of a few kilometers with the spectral resolution of 2-3 ${\AA}$. The observations were carried out simultaneously with the measurement of precipitating electrons using an electrostatic analyzer (ESA, 100 eV-20 keV) and a solid state telescope (SST, 170 keV-360 keV) on board the same satellite. With a careful mapping of the field lines, we were able to correlate the particle spectrum to the corresponding FUV spectrum of the footprints of the FIMS image that varied significantly in fine scales. We divided the FIMS spectral band into the LBH long (LBHL, 1640-1715 ${\AA}$) and LBH short (LBHS, 1380-1455 ${\AA}$) bands, and compared the electron energies with the intensities of LBHL and LBHS for the well-defined inverted-V structures. The result shows a strong correlation between the total LBH intensity and the energy flux measured by ESAwhile the peak energy itself does not correlate well with the LBH intensity. On the other hand, it was observed that the ratio of the LBHL intensity to that of LBHS increased significantly as the peak electron energy increased, primarily due to a smaller absorption by O2 at LBHL than at LBHS.

• Journal of the Mineralogical Society of Korea
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• v.23 no.4
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• pp.403-411
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• 2010

Essentials of understanding the geochemical evolution and geophysical processes in Earth's system are macroscopic properties and atomistic (and electronic) structures of Earth materials. Recent advances in quantum calculations based on the density functional theory allow us to unveil the previously unknown details of local atomic structures in diverse silicates in Earth's interior. Here, we report the O K-edge ELNES (energy-loss near-edge structure; ELNES) spectra and PLDOS (partial local density of states) for oxygen atoms in ${\alpha}$-quartz and stishovite using the quantum calculations based on FP-LAPW (full potential linearized augmented plane wave). The calculated O K-edge ELNES spectrum of ${\alpha}$-quartz shows a strong peak at ~538 eV due to comer-sharing oxygen linking two $SiO_4$ tetrahedra and that for stishovite shows two distinct peaks at ~537 and ~543 eV corresponding to edge-sharing oxygen linking $SiO_6$ octahedra. The significant differences in spectral features of O K-edge ELNES spectra suggest that the O K-edge features can be useful indicator to distinguish various oxygen sites in diverse crystal and amorphous silicates in the Earth's interior.

• Journal of the Korean Magnetics Society
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• v.4 no.1
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• pp.12-19
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• 1994

The crystallization behavior of the amorphous $Fe_{73.5}Cu_{1}Nb_{3}Si_{16.5}B_{6}$ alloy with isothermal annealing at $552^{\circ}C$ was studied by $M\"{o}ssbauer$ spectroscopy. The amorphous phase was revealed to coexist together with $Do_{3}-FeSi$ nanocrystalline and Cu-duster in annealed alloys by $M\"{o}ssbauer$ spectrum analysis. At the early stage of crystallization, Si content of FeSi is high due to the creation of Cu-cluster, and decreases with annealing until 60 minutes, which results in the increase in the mean hyperfine field of FeSi, and thereafter keeps constant. After 60 minutes, the decrease in the mean hyperfine field of the residual armrphous, in spite of a slight change in the volume fraction of the FeSi and the residual armrphous, is caused by the increase in the content of Nb and B in residual amorphous phase. Both directions of the hyperfine field, those of the FeSi and the residual amorphous, become randomly oriented in about 60 minutes. For FeSi and Cu-duster, the Avrami exponents are 0.51 and O.65, the activation energies are 2.35 eV and 2.44 eV, and the incubation times are 2.4 minutes and 0.8 minutes respectively. Earlier formation of Cu-duster than that of FeSi is coincidence with the fact that Cu atom promotes the nucleation of the FeSi.

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.301-308
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• 1996

The heat of desorption and the work function change induced by nitrogen adsorption on the slepped tungstein surface plants, W(210) and W(310), are measured using the Field Electron Emission Microscope(FEM). The adsoption sites are predicted from the Thermal Desortion Spectra(TDS). The wirk function change of both W(210) and W(310) planes increase as increasing the nitrogen dose and saturates at the nitrogen dose about 5 Langmuir to 0.29 eV and 0.20 eV respectively. We find three adsorption site on each plane for the low dose range. The TDS result shows that the intensity of $\alpha_1$ state on W(310) is much stronger than that of $\alpha_1$ state on W(210), and the direction of nitrogen dipole moment adsorbed on the sites correspond to $\alpha_1$ and $\beta_2$ state on W(210) and W(310) planes are in the opposite direction to that of the equivalent states on W(100) plane. From this observation we can predict the relative atomic position in the z-direction (perpendicular direction to the surface) of nitrogen molecules/atoms adsorbed on these sites.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.398-398
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• 2013

The electronic properties and the local structure of tantalum oxide thin film with variation of oxygen flow rate ranging from 9.5 to 16 sccm (standard cubic centimeters per minute) have been investigated by X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and X-ray absorption spectroscopy (XAS). The XPS results show that the Ta4f spectrum for all films consist of the strong spin-orbit doublet $Ta4f_{7/2}$ and $Ta4f_{5/2}$ with splitting of 1.9 eV. The oxygen flow rate of the film results in the appearance of new features in the Ta4f at binding energies of 23.2 eV, 24.4 eV, 25.8, and 27.3 eV, these peaks attribute to $Ta^{1+}$, $Ta^{2+}$, $Ta^{4+}$/$Ta^{2+}$, and $Ta^{5+}$, respectively. Thus, the presence of non-stoichiometric state from tantalum oxide ($TaO_x$) thin films could be generated by the oxygen vacancies. The REELS spectra suggest the decrease of band gap for tantalum oxide thin films with increasing the oxygen flow rate. The absorption coefficient ${\mu}$ and its fine structure were extracted from the fluorescence mode of extended X-ray absorption fine structure (EXAFS) spectra. In addition, bond distances (r), coordination numbers (N) and Debye-Waller factors (${\sigma}^2$) each film were determined by a detailed of EXAFS data analysis. EXAFS spectrapresent both the increase of coordination number of the first Ta-O shell and a considerable reduction of the Ta-O bond distance with the increase of oxygen flow rate.

• Korean Journal of Materials Research
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• v.8 no.7
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• pp.591-595
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• 1998

In this work, the freestanding GaN single crystalline substrates without cracks were grown by hydride vapor phase epitaxy (HVPE) and its some properties were investigated. The GaN substrate, having a current maximum size of 350 $\mu\textrm{m}$-thickness and 100$\textrm{mm}^2$ area, were obtained by HVPE growth of thick film GaN on sapphire substrate and subsequent mechanical removal of the sapphire substrate. A lattice constant of $C_o$= 5.18486 $\AA$ and a FWHM of DCXRD was 650 arcsec for the single crystalline GaN substrate. The low temperature PL spectrum consist of three excitonic emission and a deep D- A pair recombination at 1.8eV. The Raman E, (high) mode frequency was 567$cm^{-1}$ which was the same as that of strain free bulk single crystals. The Hall mobility and carrier concentration was 283$cm^3$<\ulcornerTEX>/ V.sand 1.1$\times$$10^{18}cm^{-3}$, respectively.

• Korean Journal of Materials Research
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• v.8 no.3
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• pp.229-237
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• 1998

We grew the hexagonal GaN films on (100) Si and (00.1) sapphire substrates in the temperature range of $300~730^{\circ}C$ by the direct reaction between thermally ionized N-source and thermally evaporated Ga-source. The GaN growth rates are increased at the initial stage of GaN formation and it was saturated to some values by the coalescence of each crystallites. The oxygen signal was observed in XPS spectra for all the GaN films grown in this work, especially low- temperature grown GaN film may due to incorporation of the residual oxygen in the growth chamber. The surface of low-temperature and shorter time grown films covered only Ga-droplets. however, with increasing the both substrate temperature and the growth time GaN is growth to crystallites. and coalescence to ring-type crystallites. With sufficient supply of N-source, they were changed to platelets. In the PL spectrum measured at 20 K, we observed the impurity related emission at 3.32eV and 3.38eV.

• Journal of the Korean institute of surface engineering
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• v.51 no.2
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• pp.126-132
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• 2018

SnS thin films with different substrate temperatures ($150 {\sim}300^{\circ}C$) as process parameters were grown on soda-lime glass substrates by RF magnetron sputtering. The effects of substrate temperature on the structural and optical properties of SnS thin films were investigated by X-ray diffraction (XRD), Raman spectroscopy (Raman), field-emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS), and Ultraviolet-visible-near infrared spectrophotometer (UV-Vis-NIR). All of the SnS thin films prepared at various substrate temperatures were polycrystalline orthorhombic structures with (111) planes preferentially oriented. The diffraction intensity of the (111) plane and the crystallite size were improved with increasing substrate temperature. The three major peaks (189, 222, $289cm^{-1}$) identified in Raman were exactly the same as the Raman spectra of monocrystalline SnS. From the XRD and Raman results, it was confirmed that all of the SnS thin films were formed into a single SnS phase without impurity phases such as $SnS_2$ and $Sn_2S_3$. In the optical transmittance spectrum, the critical wavelength of the absorption edge shifted to the long wavelength region as the substrate temperature increased. The optical bandgap was 1.67 eV at the substrate temperature of $150^{\circ}C$, 1.57 eV at $200^{\circ}C$, 1.50 eV at $250^{\circ}C$, and 1.44 eV at $300^{\circ}C$.

• Korean Journal of Food Science and Technology
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• v.31 no.6
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• pp.1613-1618
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• 1999

Extracts of Citrus sudachi juice and peel were obtained by several organic solvents such as hexane, acetone, ethyl acetate and methanol. Their antimicrobial spectrum were determined against 14 strains of gram positive and 4 strains of gram negative bacteria by paper disk method and minimal inhibitory concentration (MIC) was also obtained. Antimicrobial activities of solvent extracts from Citrus sudachi juice showed stronger than those of solvent extracts from peel. Acetone extract from juice showed the strongest antimicrobial activity among extracts, but the hexane extract did not show antimicrobial activities on tested target strains. The MIC was differant among tested strains; i.e. 0.5% (v/v) to Bacillus subtilis, 1% to Pseudomonas fragi, 1.5% to Listeria monocytogenes and Escherichia coli O157:H7, 2% to Propionibacterium acnes and Salmonella typhimurium, and 2.5% to Staphylococcus aureus.

• Journal of Adhesion and Interface
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• v.13 no.4
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• pp.188-192
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• 2012

Herein, CdS-coated PMMA nanoparticles were prepared by in-situ surfactant-free emulsion copolymerization and subsequent CdS coating process. As-prepared CdS/PMMA hybrid particles had 201.7 nm in diameter. The amount of CdS nanocrystals in the hybrid particles was 10.37 wt% determined by TGA and elemental analysis. The size of CdS crystals was 3.55 nm preferentially grown in (111) plane. UV-vis spectrum of PMMA/CdS nanoparticles showed the significant blue-shift in optical illumination. The reason was found because the synthesized CdS nanocrystals on PMMA particles had a different band gap energy of 2.70 eV which was significantly higher than that of known-value of bulk CdS (2.41 eV) due to a quantum confinement effect.