• Journal of the Korean Electrochemical Society
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• v.1 no.1
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• pp.33-39
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• 1998

To AC impedance study was performed in this study on the interfacial reaction between organic electrolyte and amorphous tungsten oxides thin film, cathodically coloring oxide, prepared by e-beam evaporation method in the 1 M $LiClO_4/PC$ organic solution. The electrochemical reactions at the interface were analyzed by the transient method and the complex impedance spectroscopy. The impedance spectrums showed that the electro-chemical intercalation of lithium cations was consisted of the following three steps; the first step, the charge transfer reaction of lithium cation at the interface between amorphous tungsten oxides thin film and the organic electrolyte, the second step, the adsorption of lithium atom on the surface of amorphous tungsten oxides thin film, and then the third step, the absorption and the diffusion of lithium atom into amorphous tungsten oxides thin layer. The bleaching and the coloring characteristics of amorphous tungsten oxides thin film were explained in terms of thermodynamic and kinetic variables, the simulated $R_{ct},\;C_{dl},\;D$ and $\sigma_{Li}$ by CNLS fitting method. Especially it was found that the limiting values of electrochromic reaction were the molar ratio of lithium, y=0.167 and the electrode potential, E=2.245 V (vs. Li).

• Journal of the Korean Vacuum Society
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• v.19 no.4
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• pp.293-299
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• 2010

Vertically aligned ZnO nanorods on Si (111) substrate were prepared by hydrothermal method. The ZnO nanorods on spin-coated seed layer were synthesized at $140^{\circ}C$ for 6 hours in autoclave and were thermally annealed in argon atmosphere for 20 minutes at temperature of 300, 500, $700^{\circ}C$. The effects of the thermal annealing on the structural and optical properties of the grown on ZnO nanorods were investigated by X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), photoluminescence (PL). All the ZnO nanorods show a strong ZnO (002) and weak (004) diffraction peak, indicating c-axis preferred orientation. The residual stress of the ZnO nanorods is changed from compressive to tensile by increasing annealing temperature. The hexagonal shaped ZnO nanorods are observed. The PL spectra of the ZnO nanorods show a sharp near-band-edge emission (NBE) at 3.2 eV, which is generated by the free-exciton recombination and a broad deep-level emission (DLE) at about 2.12~1.96 eV, which is caused by the defects in the ZnO nanorods. The intensity of the NBE peak is decreased and the DLE peak is red-shifted due to oxygen-related defects by thermal annealing.

• Journal of Sensor Science and Technology
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• v.2 no.1
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• pp.101-108
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• 1993

$TiO_{2}$/Se : Te heterojunction for color sensor has been fabricated by RF reactive sputtering and thermal evaporation methods onto glass substrate. The optimum deposition condition of $TiO_{2}$ films was such that RF power was 120 W, substrate temperature was $100^{\circ}C$, oxygen concentration was 50%, working pressure was 50 mTorr for the $TiO_{2}$ film thickness of $1000{\AA}$. In this case, the optical transmittance of $TiO_{2}$ film at 550 nm-wavelength was 85%, resistivity was $2{\times}10^9{\Omega}{\cdot}cm$, refractive index was 2.3, and optical bandgap was 3.58 eV. The composition ratio of 0 to Ti by AES analysis was 1.7. When $TiO_{2}$ films were annealed at $400^{\circ}C$ for 30 min. in $O_{2}$ ambient, the optical transmittance of $TiO_{2}$ films at the wavelength range of $300{\sim}580$ nm was improved from 0 to 25%. When Se : Te films were annealed at $190^{\circ}C$ for 1 min., photosensitivity under illumination of 1000 lux was 0.75. The optical bandgap of Se : Te films was 1.7 eV. The structures of Se : Te films were the hexagonal with (100) and (110) orientation. The spectral response of a-Se was improved by the addition of Te, especially in the long wavelength region. The $TiO_{2}$/Se : Te heterojunction showed wide spectral response, and more improved one than that of a-Si film in the blue light region.

• Progress in Medical Physics
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• v.25 no.3
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• pp.151-156
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• 2014

The purpose of this study was to confirm the feasibility of imaging of therapy region from the boron neutron capture therapy (BNCT) using the measurement of the prompt gamma ray depending on the neutron flux. Through the Monte Carlo simulation, we performed the verification of physical phenomena from the BNCT; (1) the effects of neutron according to the existence of boron uptake region (BUR), (2) the internal and external measurement of prompt gamma ray dose, (3) the energy spectrum by the prompt gamma ray. All simulation results were deducted using the Monte Carlo n-particle extended (MCNPX, Ver.2.6.0, Los Alamos National Laboratory, Los Alamos, NM, USA) simulation tool. The virtual water phantom, thermal neutron source, and BURs were simulated using the MCNPX. The energy of the thermal neutron source was defined as below 1 eV with 2,000,000 n/sec flux. The prompt gamma ray was measured with the direction of beam path in the water phantom. The detector material was defined as the lutetium-yttrium oxyorthosilicate (Lu0,6Y1,4Si0,5:Ce; LYSO) scintillator with lead shielding for the collimation. The BUR's height was 5 cm with the 28 frames (bin: 0.18 cm) for the dose calculation. The neutron flux was decreased dramatically at the shallow region of BUR. In addition, the dose of prompt gamma ray was confirmed at the 9 cm depth from water surface, which is the start point of the BUR. In the energy spectrum, the prompt gamma ray peak of the 478 keV was appeared clearly with full width at half maximum (FWHM) of the 41 keV (energy resolution: 8.5%). In conclusion, the therapy region can be monitored by the gamma camera and single photon emission computed tomography (SPECT) using the measurement of the prompt gamma ray during the BNCT.

• Journal of Sensor Science and Technology
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• v.12 no.1
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• pp.16-23
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• 2003

Thermoluminescent properties of $Li_2B_4O_7$ single crystal grown by Czochralski method have been investigated. The high quality $Li_2B_4O_7$ single crystal without core was obtained at rotation speed of 10 rpm for seed crystal and pulling speed below $0.18\;mm{\cdot}h^{-1}$. The structure of $Li_2B_4O_7$ single crystal was classified as tetragonal by XRD analysis. The TL glow curve was composed with three overlapped peaks which can be easily deconvoluted and the TL response of $Li_2B_4O_7$ single crystal TLD to X-ray radiation is linear within the range of $50\;mGy{\sim}1.5\;Gy$. Activation energies of three TL glow peaks analyzed by the various heating rates method and PL spectrum were 0.93, 1.78 and 2.25 eV, respectively.

• Journal of the Earthquake Engineering Society of Korea
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• v.11 no.1 s.53
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• pp.67-77
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• 2007

Site coefficients in IBC and KBC codes have some limits to predict the rational seismic responses of a structure, because they take into account only the effect of the soil amplification without the effects of the structure-soil interaction. In this study, upper and lower limits of the site coefficients are estimated through the pseudo 3-D elastic seismic response analyses of structures built on the linear or nonlinear soil layers taking Into account the effects of the structure-soil interaction. Soil characteristics of site classes of A, B and C were assumed to be linear, and those of site classes of D and E were done to be nonlinear and the Ramberg-Osgood model was used to evaluate shear modulus and damping ratio of a soil layer depending on the shear wave velocity of the soil layer, Seismic analyses were performed with 12 weak or moderate earthquake records scaled the peak acceleration to 0.1g or 0.2g and deconvoluted as earthquake records at the bedrock located at 30m deep under the outcrop. With the study results of the elastic seismic response analyses of structures, new standard response spectrum and upper and lower limits of the site coefficients of $F_{a}\;and\;F_{v}$ at the short period range and the period of 1 second are suggested including the effects of the structure-soil interaction, and new site coefficients for the KBC code are also suggested.

• Journal of Sensor Science and Technology
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• v.1 no.1
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• pp.59-66
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• 1992

To develop the highly sensitive TLD radiation sensors, $BaSO_{4}$ : Eu-PTFE TLDs are fabricated by polymerizing the PTFE(polytetrafluoroethylene) with $BaSO_{4}$ : Eu TL phosphors. The $BaSO_{4}$ : Eu TL phosphors having the highest sensitivity of $X/{\gamma}$-rays are obtained by sintering at $1000^{\circ}C$ in $N_{2}$ atmosphere a mixture of $BaSO_{4}$ powder with 1mol% Eu($Eu_{2}O_{3}$), 6mol% $NH_{4}Cl$ and 5mol% $(NH_{4})_{2}SO_{4}$ which were co-precipitated in dilute sulfuric acid and then dried. The activation energy, frequency factor and kinetic order of $BaSO_{4}$ : Eu TL phosphor are 1.17eV, $3.6{\times}10^{11}/sec$ and 1.25, respectively. And the spectral peak of $BaSO_{4}$ : Eu is about 425nm. The optimum TL Phosphor content and thickness of the $BaSO_{4}$ : Eu-PTFE TLD are 40wt% and $105.7mg/cm^{2}$. The optimum polymerization temperature and time for fabrication of $BaSO_{4}$ : Eu-PTFE TLDs are $380^{\circ}C$ and 2 hours in air, respectively. The linear dose range to ${\gamma}$ rays is 0.01-20Gy and fading rate is about 10%/60hours.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.4
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• pp.121-127
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• 2022

β-Gallium oxide (Ga₂O₃), an ultra-wide bandgap semiconductor, has attracted great attention due to its promising applications for high voltage power devices. The most stable phase among five different polytypes, β-Ga₂O₃ has the wider bandgap of 4.9 eV and higher breakdown electric field of 8 MV/cm. Furthermore, it can be grown from melt source, implying higher growth rate and lower fabrication cost than other wide bandgap semiconductors such as SiC, GaN and diamond for the power device applications. In this study, β-Ga₂O₃ bulk crystals were grown by the edge-defined film-fed growth (EFG) process. The growth direction and the principal surface were set to be the [010] direction and the (100) plane of the β-Ga₂O₃ crystal, respectively. The spectra measured by Raman an alysis could exhibit the crystal phase an d impurity dopin g in the β-Ga₂O₃ ingot, and the crystallinity quality and crystal direction were analyzed using high-resolution X-ray diffraction (HRXRD). The crystal quality and various properties of as-grown β-Ga₂O₃ ribbon was systematically analyzed in order to investigate the spatial variation in entire crystal grown by EFG method.

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.11a
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• pp.97-97
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• 1994

Wide gap 반도체 중 하나인 GaN 에너지갭이 실온에서 3.4eV 이고 직접천이형 에너지대 구조를 가지므로 청색 및 자외영역의 파장을 발광하는 발광다이오드와 바도체 레이저 다이오드의 제작에유용한 재료이다. GaN계 III족 질화물반도체가 다파장용 광원으로서 유망함을 보인 것은 1970년대 초방의기초적 연구이다. 이로부터 약 25년이 경고한 현재 청색발광다이오드가 실용화당계에 이르게 되었지만 아직까지 전류주입에 의한 레이저발진은 보고되고있지 않다. 이 논문에서는 ALGaN/GaN이중이종접합(DH) 구조의 광여기에 의한 유도방출과 광학적 이득을 측정하므로서 전류주입에의한 레이저발진의 가능성을 조사하였다. 유기금속기상에피텍셜(MOVPE)법으로 성장한 ALGaN/GaN DH구조의 표면에 수직으로 펄스발진 질소레이저(파장:337.1nm, 주기:10Hz, 폭: 8nsec) 빔의 공출력밀도를 변화시키어 조사하고 시료의단면 혹은 표면으로부터 방출되는 광 스펙트럼을 측정하였다. 입상광밀도가 증가함에 따라 자연방출에 의한 발광피크보다 낮은 에너지에서 발광강도가 큰 유도방출에 의한 피크가 370nm의 파장에서 현저하게 나타났으며 실온에서 유동방출에 필요한 입사공밀도의 임계치는 약 89㎾/$\textrm{cm}^2$이었다. 이는 GaN 단독층에 대한 유동방출의 임계치 700㎾/$\textrm{cm}^2$ 에 비하여 약 1/8정도 낮은 것이며, 이를 전류밀도로 환산하면 약 27㎄/$\textrm{cm}^2$ 정도로서 전류주입에 의하여서도 레이저발진을 실현할 수 있는 현실적인 값이다. 한편 광여기 방법으로 측정한 광학적 이득은 입사광의 밀도가 각각 100㎾/$\textrm{cm}^2$과 200㎾/$\textrm{cm}^2$일 때 34$cm^{-1}$ / 과 160 $cm^{-1}$ / 이었다. 이와 같은 결과는 GaN의밴드단 부근의 파장영역에서 AIGaN 흔정의 굴절율이 GaN의 굴절율보다 작으므로 DH구조의 채택의 의한 광의 몰입이 가능하여 임계치가 저하된 것으로 여겨진다. 또한 광학적 이득의 존재는 이 구조에 의한 극단파장 반도체 레이저다이오드의 실현 가능성을 나타내는 것이다.

• Electrical & Electronic Materials
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• v.9 no.5
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• pp.463-469
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• 1996

The double insulating layer consisting of anodic oxide and ZnS was formed for HgCdTe metal insulator semiconductor(MIS) structure. ZnS was evaporated on the anodic oxide grown in H$_{2}$O$_{2}$ electrolyte. Recently, this insulating mechanism for HgCdTe MIS has been deeply studied for improving HgCdTe surface passivation. It was found through TEM observation that an interface layer is formed between ZnS and anodic oxide layers for the first time in the study of this area. EDS analysis of chemical compositions using by electron beam of 20.angs. in diameter and XPS depth composition profile indicated strongly that the new interface is composed of ZnO. Also TEM high resolution image showed that the structure of oxide layer has been changed from the amorphous state to the microsrystalline structure of 100.angs. in diameter after the evaporation of ZnS. The double insulating layer with the resistivity of 10$^{10}$ .ohm.cm was estimated to be proper insulating layer of HgCdTe MIS device. The optical reflectance of about 7% in the region of 5.mu.m showed anti-reflection effect of the insulating layer. The measured C-V curve showed the large shoft of flat band voltage due to the high density of fixed oxide charges about 1.2*10$^{12}$ /cm$^{2}$. The oxygen vacancies and possible cationic state of Zn in the anodic oxide layer are estimated to cause this high density of fixed oxide charges.