• Journal of Sensor Science and Technology
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• v.6 no.4
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• pp.252-257
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• 1997

Organic EL devices, which have the sing3e-layer structure of ITO(indium-tin-oxide) /PPV(poly(p-phenylene vinylene))/cathode and the double-layer structure of ITO/PVK (poly(N- vinylcarbazole)) /PPV/cathode, were fabricated and their electro-optical properties were investigated. Experimental results, in single-layer structure, shown that the increment of temperature for thermal conversion of PPV film from $140^{\circ}C$ to $260^{\circ}C$ decreases the maximum luminance from $118.8\;cd/m^{2}$(20V) to $21.14\;cd/m^{2}$(28V) and shift the maximum peak of EL spectrum from 500nm to 580nm. The lower the work function of cathode is, the more the luminance and injection current of device. In double-layer structure, as the concentration of PVK solution decreases from 0.5 wt% to 0.05 wt%, the luminance of device increases from $70.71\;cd/m^{2}$(32V) to $152.7\;cd/m^{2}$(26V).

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.107-107
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• 2010

ZnO는 상온에서 에너지 밴드갭이 3.37 eV 이고 엑시톤 속박에너지가 60 meV 인 넓은 에너지 띠를 가진 반도체이다. ZnO 반도체는 고에너지 영역에서 광투과율 및 에너지 수집율이 큰 특성을 가지고 있기 때문에 단파장 영역에서 작동하는 발광 다이오드나 반도체레이저 소자 응용에 사용되고 있다. 이와 더불어 액정디스플레이, 유기발광소자 및 태양전지에서 투명 산화물 전극으로 많은 응용이 되고 있다. 본 연구에서는 p-type Si 기판 위에 ZnO 나노입자 형성과 구조적 성질과 전자적 성질에 대하여 조사하였다. ZnO 나노입자를 형성하기 위해 ethanol에 zinc acetate dehydrate (5 wt%)을 적절히 분산시킨 $Zn(CH_3COO)_2H_2O\;+\;CH_3OH$ 용액을 스핀 코팅하여 산소 분위기에서 각각 $300^{\circ}C$, $500^{\circ}C$, $700^{\circ}C$ 및 $900^{\circ}C$로 각각 2시간 동안 열처리 하였다. X-ray 회절 실험 결과는 열처리 온도에 관계없이 ZnO (0001)의 피크가 관측되었다. 원자힘 현미경 이미지상으로 열처리 온도에 따른 ZnO 나노입자의 표면상태의 변화와 나노입자의 크기의 변화를 확인하였다. X-ray 광전자 분광 스펙트럼 결과는 Zn $2p_{3/2}$와 O 1s의 전자상태 스펙트럼을 분석하여 ZnO 나노입자가 형성됨을 보여주었다. 본 연구를 통하여 용액방법을 사용하여 제작된 ZnO 나노입자의 열처리 온도변화에 따른 구조적 성질과 전자적 성질을 이해하는데 도움을 줄 것이다.

• Korean Journal of Optics and Photonics
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• v.14 no.1
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• pp.1-7
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• 2003

We determined the optical constants of organic light emitting material of Alq$_3$ in a spectral range between 1.5 and 6 eV using the physical model introduced by Forouhi and Bloomer［Phys. Rev. B 34, pp. 7018-7026, 1986.］. The initial parameters of $A_i,\;B_i,\;C_i$ of Forouhi-Bloomer dispersion relations were determined from the absorption peaks and widths of absorption spectra of the Alq$_3$ film. The refractive index of substrate, a fused silica, is derived from the Sellmeier equation with the measured transmittance and reflectance spectra. Then, the complex refractive index and thickness of the Alq$_3$ film were calculated by use of a nonlinear least square fitting program with the Forouhi-Bloomer dispersion relation and the measured transmittance and reflectance spectra.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.167-167
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• 2000

전지 재료의 충방전 과정 연구에는 X-선 분말회절(x-ray powder diffraction techniques)과 중성자회절을 많이 사용하였다. 하지만 이러한 분석기술은 long-range order의 구조에 관한 정보를 제공하는데 유용하지만 atomic scale의 구조에 관한 정보를 얻기에는 한계가 있다. Li 전지에서의 전기화학적 반응에서는 cathode 물질에 포함된 전이금속의 산화, 환원 반응에 의한 Li 이온의 intercalation (charge process)과 deintercalation (discharge process) 현상이 일어난다. 이러한 충방전 과정은 알려지지 않은 다양한 형태의 위상 변화를 동반하게 되는데 x-선 이나 중성자를 이용한 powder diffraction techniques 로는 단지 정성적인 결정학적 정보를 얻을 수 있다. 따라서 최근에 원자 단위의 local structure에 관한 정보와 electrochemical state에 관한 정보를 동시에 얻을 수 있는 X-ray Absorption Fine Structure (XAFS) 분석기술을 Li 전지분석에 활용하기 시작하였다. XAFS는 하나의 x-ray 흡수원자에 대해서 주변원자들의 원자구조에 관한 정보와 구성 원소의 electrochemical state에 관한 정보를 얻을 수 있는 분석방법이다. X-ray Induced Electron Emission Spectroscopy (XIEES)는 x-ray에 의해서 방출된 전자를 검출하여 스펙트럼을 얻는 기능을 함축적으로 나타낸 것으로, x-ray를 물질 표면에 조사하여 발생하는 광전자, Auger 전자, 이차전자 등을 전자검출기(Channel Electron Multiplier: CEM)로 검출하는 기능과, 시료를 투과한 x-ray와 시료에서 발생하는 형광 x-ray를 비례계수기로 검출하는 기능을 가지고 있다. 이러한 검출 능력을 바탕으로 EXAFS, XANES, Standing Wave Technique, Elemental Composition Analysis, DXRD, Total Reflection Technique 등을 이용하여 물질을 구성하고 있는 원소의 성분, 미세원자구조, 전자구조에 관한 정보를 얻을 수 있는 새로운 spectrometer이다. 본 연구에서는 자체 개발한 XIEES의 XAFS 기능을 이용하여 여러 가지 방법으로 제조한 LiMn2-xO4와 LiMnO2, MnO2에서 Mn K-absorption edge에 대한 chemical state 변화를 측정하였다. Absorption edge에서 chemical shift를 측정하기 위해서는 방사광 가속기 수준의 에너지 분해능(~0.3eV)이 필요하다. 이번 연구에서는 SiO2(3140) monochromator를 사용하고 여기에 맞는 적절한 parameter를 적용하여 x-ray 에너지 분해능을 포항방사광가속기 수준으로 개선하였다. XIEES에서 얻은 스펙트럼과 포항방사광가속기에서 얻은 스펙트럼을 비교하였다. Chemical shift가 일어나는 경향은 두 실험 결과가 잘 일치하였다.

• Journal of the Korean Society of Radiology
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• v.8 no.7
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• pp.455-459
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• 2014

We grew the $Li_6Gd(BO_3)_3:Ce^{3+}$ scintillator and determined the scintillation and thermoluminescence properties for X-rays. The emission spectrum of $Li_6Gd(BO_3)_3:Ce^{3+}$ is located in the range of 370~500 nm, peaking at 423 nm an 455 nm, due to the $4f{\rightarrow}5d$ transition of $Ce^{3+}$ ions. The fluorescence decay time of the crystal is composed three components. The fast component is 60 ns (25%), the intermediate component is 787 ns (29%) and the slow component is $5.9{\mu}s$ (46%) of the crystal. The after-glow is caused by the electron and hole traps in the crystal lattice. We determined physical parameters of the traps in the crystal. The thermoluminescence trap are composed two traps. The determined activation energy (E), kinetic order (m) and frequency factor (s) of the first trap are 0.65 eV, 1.01 and $6.9{\times}10^8s^{-1}$. And, the determined activation energy, kinetic order and frequency factor of the second trap are 0.96 eV, 1.79 and $3.1{\times}10^{12 }s^{-1}$, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.6
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• pp.252-259
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• 2005

Single crystal $CuGaSe_2$ layers were grown on thoroughly etched semi-insulating CaAs(100) substrate at $450^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuGaSe_2$ source at $610^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence (PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuGaSe_2$ thin films measured with Hall effect by Van der Pauw method are $4.87{\times}10^{17}cm^{-3}$ and $129cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.7998eV-(8.7489{\times}10^{-4}eV/K)T^2/(T+335K)$. The voltage, current density of maxiumun power, fill factor, and conversion, efficiency of $n-CdS/p-CuGaSe_2$, heterojunction solar cells under $80mW/cm^2$ illumination were found to be 0.41 V, $21.8mA/cm^2$, 0.75 and 11.17%, respectively.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.2
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• pp.492-497
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• 2012

In this paper, we determined the scintillation and thermoluminescence properties of $Cs_2NaCeBr_6$ elpasolite scintillation crystal. The emission spectrum of $Cs_2NaCeBr_6$ is located in the range of 300 ~ 450 nm, peaking at 377 nm and 400 nm. And, the fluorescence decay time of the crystal is composed two components. The fast component is 140 ns (94%), and the slow component is 880 ns (6%) of the crystal. The after-glow is caused by the electron and hole traps in the crystal lattices. We determined thermoluminescence parameters of the traps in the crystal. The determined activation energy(E), kinetic order and frequency factor of the traps are 0.67 eV, 1.71 and $2.51{\times}10^8s^{-1}$ respectively. In this crystal, re-combination rate is more dominant phenomenon than the re-trapping rate.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.2
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• pp.1211-1215
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• 2014

We developed a new $Rb_2LiCeCl_6$ scintillator and determined the scintillation and thermoluminescence properties of the scintillator. The emission spectrum of $Rb_2LiCeCl$ is located in the range of 350 ~ 410 nm, peaking at 368 nm and 378 nm, due to the 4f ${\rightarrow}$ 5d transition of $Ce^{3+}$ ions. The fluorescence decay time of the crystal is composed two components. The fast component is 71 ns (85%) and the slow component is 405 ns (15%) of the crystal. The after-glow is caused by the electron and hole traps in the crystal lattice. We determined physical parameters of the traps in the crystal. The determined activation energy(E), kinetic order(m) and frequency factor(s) of the trap are 0.75 eV, 1.48 and $3.0{\times}10^8s^{-1}$, respectively.

• Korean Chemical Engineering Research
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• v.48 no.5
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• pp.654-659
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• 2010

We have investigated the effect of rubrene-doped CuPc hole transport layer on the performance of p-i-n type bulk hetero-junction photovoltaic device with a structure of ITO/PEDOT:PSS/CuPc: rubrene/CuPc:C60(blending ratio 1:1)/C60/BCP/Al and have evaluated the current density-voltage(J-V) characteristics, short-circuit current($J_{sc}$), open-circuit voltage($V_{oc}$), fill factor(FF), and energy conversion efficiency(${\eta}_e$) of the device. By rubrene doping into CuPc hole transport layer, absorption intensity in absorption spectra decreased. However, the performance of p-i-n organic type bulk hetero-junction photovoltaic device fabricated with crystalline rubrene-doped CuPc was improved since rubrene shows higher bandgap and hole mobility compared to CuPc. Increased injection currents have effected on the performance improvement of the present device with energy conversion efficiency(${\eta}_e$) of 1.41%, which is still lower value compared to silicone solar cell and many efforts should be made to improve organic photovoltaic devices.

• Applied Chemistry for Engineering
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• v.10 no.1
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• pp.105-111
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• 1999

When the preparation method of iron silicide films possess the annealing process, the interfacial state of the films is not fine. The good quality films were obtained as the plasma was used without annealing processing. Since the injected precursors were various active species in the plasma state, the organic compound was contained in the prepared films. We confirmed the formation of Fe-Si bonds as well as the organic compound by Fe and Si vibration mode in Raman scattering spectrum at $250cm^{-1}$ and Ft-IR. Because of epitaxy growth being progressed by the high energy of plasma at the low temperature of substrate, iron silicide was epitaxially grown to ${\beta}$-phase that had lattice structure such as [220]/[202] and [115]. Band gap of the prepared films had value of 1.182~1.174 eV and optical gap energy was shown value of 3.4~3.7 eV. The Urbach tail and the sub-band-gap absorptions were appeared by organic compound in films. We knew that the prepared films by plasma were obtained a good quality films because of being grown single crystal.