• 제목/요약/키워드: $V_2O_5-MoO_3/ZrO_2$

검색결과 8건 처리시간 0.031초

Characterization of Vanadium Oxide Supported on Zirconia and Modified with MoO3

  • Sohn, Jong-Rack;Seo, Ki-Cheol;Pae, Young-Il
    • Bulletin of the Korean Chemical Society
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    • 제24권3호
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    • pp.311-317
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    • 2003
  • Vanadium oxides supported on zirconia and modified with MoO₃were prepared by adding Zr(OH)₄powder into a mixed aqueous solution of ammonium metavanadate and ammonium molybdate followed by drying and calcining at high temperatures. The characterization of prepared catalysts was performed using FTIR, Raman spectroscopy and solid-state $^{51}V$ NMR. In the case of a calcination temperature of 773 K, for samples containing low loading of $V_2O_5$, below 15 wt %, vanadium oxide was in a highly dispersed state, while for samples containing high loading of $V_2O_5$, equal to or above 15 wt %, vanadium oxide was well crystallized because the $V_2O_5$ loading exceeded the formation of a monolayer on the surface of $ZrO_2$. The $ZrV_2O_7$ compound was formed through the reaction of $V_2O_5\;and\;ZrO_2$ at 873 K and the compound decomposed into $V_2O_5\;and\;ZrO_2$ at 1073 K, which were confirmed by FTIR spectroscopy and solid-state $^{51}V$ NMR. IR spectroscopic studies of ammonia adsorbed on $V_2O_5-MoO_3/ZrO_2$ showed the presence of both Lewis and Bronsted acids.

플라즈마 화학 증착법에 의한 $Y_2O_3-StabilzedZrO_2$박막의 제조와 Capacitance-Voltage특성 (Preparation and C-V characteristics of $Y_2O_3-StabilzedZrO_2$ Thin Films by PE MO CVD)

  • 최후락;윤순길
    • 한국재료학회지
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    • 제4권5호
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    • pp.510-515
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    • 1994
  • 플라즈마 화학 증착법으로 (100)p-type Si wafer위에 $Y_2O_3$-Stabilzed $ZrO_2$박막을 증착하였다. 반응 기체로는 zirconium triflouracethylacetonate[Zr(tfacac) $[Zr(tfacac)_4]$, tri(2.2.6.6 tetramethy1-3, 5-heptanate) yttrium $[Y(DPM)_3]$과 oxygen gas를 사용하였다. X-ray diffraction(XRD)과 fourier Particle induced x-ray emission(PIXE)을 통하여 $Y(DPM)_3$ bubbling temperature가 $160^{\circ}C, 165^{\circ}C, 170^{\circ}C$일때 $Y_2O_3$함량이 12.1mo1%, 20.4mol%, 31.6mol%임을 알 수 있었다. C-V측정에서 $Y(DPM)_3$ bubbling temperature가 증가함에 따라 flat band voltage가 더욱더 음의 방향으로 이동하였다.

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Synthesis and Characterization of Novel Rare-earth Oxides Precursors

  • Lee, Euy Jin;Park, Bo Keun;Chung, Taek-Mo;Kim, Chang Gyoun
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.366.1-366.1
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    • 2014
  • The rare-earth oxides M2O3 (M=La, Pr, Gd) are good insulators due to their large band gap (3.9eV for Pr2O3, 5.6eV for Gd2O3), they have high dielectric constants (Gd2O3 K=16, La2O3 K=27, Pr2O3 K=26-30) and, compared to ZrO2 and HfO2, they have higher thermodynamic stability on silicon making them very attractive materials for high-K dielectric applications. Another attractive feature of some rare-earth oxides is their relatively close lattice match to that of silicon, offering the possibility of epitaxial growth and eliminating problems related to grain boundaries in polycrystalline films. Metal-organic chemical vapor deposition (MOCVD) has been preferred to PVD methods because of the possibility of large area deposition, good composition control and excellent conformal step coverage. Herein we report on the synthesis of rare-earth oxide complexes with designed alkoxide and aminoalkoxide ligand. These novel complexes have been characterized by means of FT-IR, elemental analysis, and thermogravimetric analysis (TGA).

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SKull법에 의한 Colored Cubic Zirconia(CCZ)단결정 성장 (Colored Cubic Zirconia(CCZ) Single Crystal Growth by Skull Method)

  • 김석호;최종건;정대식;오근호
    • 한국세라믹학회지
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    • 제25권5호
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    • pp.443-448
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    • 1988
  • Colored Cubic Zircona(CCZ) single crystals were grown by the skull melting method. The grown crystals were doped with up to 0.1wt% transition (Cu, Ni, Co, Ti, Fe, Mo, Cr, V, Mn) metal ions on ZrO2-Y2O3(9.5~10mol%) and their Optical transmission spectra(λ=300~800nm)data were obtained. Various colors were pronounced due to dopant effects in the grown Crystals.

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국내에 분포하는 화산암류중 금의 분포특징에 관한 연구 (Distribution Characteristics of Gold in the Volcanic Rocks, Korea)

  • 윤정한;오근창
    • 자원환경지질
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    • 제29권3호
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    • pp.257-267
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    • 1996
  • One hundred of thirty volcanic rocks col1ected from the Jeju island, Jeongog, Guryongpo and other areas were analyzed for major elements and trace elements with Au by inductively coupled argon plasma and graphite furnace atomic absorptiom spectrometry. The Au content is the highest values (0.2~43.4 ppb, average; 10.34 ppb) from the Jeju island volcanic rocks and the lowest (0.5~11.0 ppb, average; 1.23 ppb) from the Guryongpo volcanic area. The content of Au tends to be higher in the Quarternary volcanic rocks than Tertiary or Cretaceous volcanic rocks. The Au content of the calc alkali volcanic rocks tends to increase from mafic to felsic volcanic rocks, but that of the alkalic volcanic rocks tends to increase from felsic to mafic volcanic rocks. The Au content of the volcanic rocks collected from the Jeju island shows the highest values in the feldspar olivine basalts. Elements or oxides which have positive or negative correlations with Au are Ag, Mo, Rb, V, Y, $K_2O$, MgO and $SiO_2$, but other elements analyzed are not shown correlations with Au. It has a tendency to show that samples from the Jeju with 5 ppb gold and more are plotted in the non-Dupal area and those with less than 5 ppb gold in the Dupal area, while those from the Jeongog with 5 ppb gold and more are plotted in the Dupal area and those with less than 5 ppb gold in the non-Dupal area, in the Ba/Nb-La/Nb, Zr/Nb-Ba/Nb diagrams. It shows that samples from the Jeju and Guryongpo with high gold content are plotted in the within-plate, while those with low gold content are plotted in the arc-related area, and those from the Jeongog are scattered in the $TiO_2-Al_2O_3$, $Zr/A1_2O_3-TiO_2/Al_2O_3$ diagrams.

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Metal-Organic Chemical Vapor Deposition of $Pb(Zr_xTi_{1-x})O_3$ Thin Films for High-Density Ferroelectric Random Access Memory Application

  • Lee, June-Key;Ku, June-Mo;Cho, Chung-Rae;Lee, Yong-Kyun;Sangmin Shin;Park, Youngsoo
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제2권3호
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    • pp.205-212
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    • 2002
  • The growth characteristics of metal-organic chemical vapor deposition (MOCVD) $Pb(Zr_xTi_{1-x})O_3 (PZT) thin films were investigated for the application of high-density ferroelectric random access memories (FRAM) devices beyond 64Mbit density. The supply control of Pb precursor plays the most critical role in order to achieve a reliable process for PZT thin film deposition. We have monitored the changes in the microstructure and electrical properties of films on increasing the Pb precursor supply into the reaction chamber. Under optimized conditions, $Ir/IrO_2/PZT(100nm)/Ir capacitor shows well-saturated hysteresis loops with a remanent polarization (Pr) of $~28{\mu}C/textrm{cm}^2$ and coercive voltage of 0.8V at 2.5V. Other issues such as step coverage, compositional uniformity and low temperature deposition was discussed in viewpoint of actual device application.

Ti-15Mo-5Zr-3Al 합금의 고온산화 (High Temperature Oxidation of Ti-15Mo-5Zr-3Al Alloy)

  • 우지호;김종성;백종현;이동복
    • 한국표면공학회지
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    • 제31권5호
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    • pp.278-285
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    • 1998
  • Alloys of Ti-15Mo-5Zr-3Al(wt%) were oxidized in air between 700 and $900^{\circ}C$. It was found that the oxidation resistance is much better than that of either commercially available pure Ti-6Al-4V(wt%) alloys. The oxide scales were primarily composed of thick Ti-ox-ides which were formed by the inward diffusion of oxygen from the atmosphere. At higher temperatures a thin $\alpha$-$Al_2O_3$ layer was formed on Ti-oxides owing to the outward diffusion of Al from the base alloys. Molybdenum, the noblest metal among the alloy components, was predominantly present behind the oxide-substrate interface. Zirconium, an oxygen active metal, was present at both the oxide layer and the substrate.

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A Chelating Resin Containing 2-(2-Thiazolylazo)-5-dimethylaminophenol as the Functional Group: Synthesis and Sorption Behavior for Some Trace Metal Ions

  • Lee, Won;Lee, Si-Eun;Kim, Mi-Kyoung;Lee, Chang-Heon;Kim, Young-Sang
    • Bulletin of the Korean Chemical Society
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    • 제23권8호
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    • pp.1067-1072
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    • 2002
  • A new polystyrene-divinylbenzene resin containing 2-(2-thiazolylazo)-5-dimethylamino-phenol (TAM) functional groups has been synthesized and its sorption behavior for nineteen metal ions, including Zr(Ⅳ),Hf(Ⅳ) and U(Ⅵ) has been investigated by batch and column methods. The chelating resin showed high sorption affinity for Zr(Ⅳ) at pH 1-5 and U(Ⅵ) at pH 4. Some parameters affecting the sorption of the metal ions have been detailed. The breakthrough and overall capacities were measured under optimized conditions. The overall capacities of Zr(Ⅳ), Th(Ⅳ) and U(Ⅵ), which showed higher than the other metal ions, were 0.90,0.84 and 0.80 mmol/g, respectively. The elution order of metal ions at pH 4 was evaluated as Zr(Ⅳ) > Th(Ⅳ) > U(Ⅵ) > Cu(Ⅱ) > Hf(Ⅳ) > W(Ⅵ) > Mo(Ⅵ) > In(Ⅲ) > Sn(Ⅳ) > Cr(Ⅲ) > V(Ⅴ) > Fe(Ⅲ). Quantitative recovery of most metal ions except Zr(Ⅳ) was achieved using 2M HNO3. Desorption and recovery of Zr(Ⅳ) was successfully performed with 2 M HClO4 and 2 M HCl.