• Bulletin of the Korean Chemical Society
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• v.24 no.3
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• pp.311-317
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• 2003

Vanadium oxides supported on zirconia and modified with MoO₃were prepared by adding Zr(OH)₄powder into a mixed aqueous solution of ammonium metavanadate and ammonium molybdate followed by drying and calcining at high temperatures. The characterization of prepared catalysts was performed using FTIR, Raman spectroscopy and solid-state $^{51}V$ NMR. In the case of a calcination temperature of 773 K, for samples containing low loading of $V_2O_5$, below 15 wt %, vanadium oxide was in a highly dispersed state, while for samples containing high loading of $V_2O_5$, equal to or above 15 wt %, vanadium oxide was well crystallized because the $V_2O_5$ loading exceeded the formation of a monolayer on the surface of $ZrO_2$. The $ZrV_2O_7$ compound was formed through the reaction of $V_2O_5\;and\;ZrO_2$ at 873 K and the compound decomposed into $V_2O_5\;and\;ZrO_2$ at 1073 K, which were confirmed by FTIR spectroscopy and solid-state $^{51}V$ NMR. IR spectroscopic studies of ammonia adsorbed on $V_2O_5-MoO_3/ZrO_2$ showed the presence of both Lewis and Bronsted acids.

• Journal of the Korean Ceramic Society
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• v.25 no.4
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• pp.335-340
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• 1988

The change in microstructure and the electrical properties of Pb(In1/2Nb1/2)O3-PbTiO3 Ceramics caused by V2O5 addition were studied. The results are ; 1. interability was increased because the mass transport through the second phase formed by V2O5 addition increased. 2. ith addition of V2O5, tetragonality and Curie temperature increased. The maximum value of kp was observed when 0.5wt% of V2O5 was added. 3. he second phase formed by V2O5 accelerated the grain growth, and existed in grain boundary. Electrical properties were changed by corelations between tetragonality and the amount of second phase.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.6
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• pp.475-480
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• 2001

Glasses in he system CuO-P$_2$O$_{5}$ -Nb$_2$O$_{5}$ -Nb$_2$O$_{5}$ -V$_2$O$_{5}$ were prepared by a press-quenching method on the copper plate. the glass-ceramics from these glasses were obtained by post-heat treatment, and the crystallization behavior and DC conductivities were determined. The conductivities of the glasses were range from 10$^{-6}$ s.$cm^{-1}$ / at room temperature ,but the conductivities of the glass-ceramics were 10$^{-3}$ s.$cm^{-1}$ / increased by 10$^3$ order. The crystalline product in the glass-ceramics was CuV$_2$O$_{6}$ . the crystal growth of CuV$_2$O$_{6}$ phase increased with heat-treatment conditions. The linear relationship between il($\sigma$T) and T$^{-1}$ suggested that the electrical conduction in the present glass-ceramics would be due to a small polaron hopping(SPH) mechanism.

• Applied Chemistry for Engineering
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• v.10 no.3
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• pp.382-387
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• 1999

The processes and the kinetics of the lithium intercalation into the spin coated $V_2O_5$ xerogel prepared by the sol-gel processing have been studied employing impedance analyzer. Homogeneous and quasi-isotropic thin films of the xerogel can be obtained as a result of random distribution of the $V_2O_5$ gels on the substrate by the use of the spin coating. Effective diffusion coefficient and charge transfer resistance vary more than one order of magnitude at high and low lithium composition in $V_2O_5$ xerogel, respectively.

• Journal of the Korean Chemical Society
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• v.61 no.1
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• pp.12-15
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• 2017

We presented a mapping the work function of the vanadium pentoxide ($V_2O_5$) nanonet structures by scanning Kelvin probe microscopy (SKPM). In this measurement, the $V_2O_5$ nanonet was self-assembled via dropping the solution of $V_2O_5$ nanowires (NWs) onto the $SiO_2$ substrate and drying the solvent, resulting in the networks of $V_2O_5$ NWs. We found that the SKPM signal as a surface potential of $V_2O_5$ nanonet is attributed to the contact potential difference (CPD) between the work functions of the metal tip and the $V_2O_5$ nanonet. We generated the histograms of the CPD signals obtained from the SKPM mapping of the $V_2O_5$ nanonet as well as the highly ordered pyrolytic graphite (HOPG) which is used as a reference for the calibration of the SKPM tip. By using the histogram peaks of the CPD signals, we successfully estimated the work function of ~5.1 eV for the $V_2O_5$ nanonet structures. This work provides a possibility of a nanometer-scale imaging of the work function of the various nanostructures and helps to understand the electrical characteristics of the future electronic devices.

• Electrical & Electronic Materials
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• v.6 no.2
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• pp.129-136
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• 1993

습도 감지소자의 물질 중 이온형의 대표적인 물질인 TiO$_{2}$ 습도 센서와 TiO$_{2}$에 V$_{2}$O$_{5}$를 첨가한 TiO$_{2}$-V$_{2}$O$_{5}$ 세라믹 습도센서를 제작하고 V$_{2}$O$_{5}$함량의 변화, 열처리 온도 및 열처리 시간에 따른 습도감지 특성 및 동작온도에 따른 특성 등을 조사하였으며 XRD와 SEM으로 그 원인을 규명하였다. TiO$_{2}$에 V$_{2}$O$_{5}$를 첨가하면 선형성이 좋아지는 것을 알 수 있었고 제작한 시료 중 V$_{2}$O$_{5}$의 함량이 1mol% 열처리 조건이 1000.deg.C, 1시간인 소자는 동작온도 40.deg.C에서 약 95%의 감도를 나타내었다.

• Applied Chemistry for Engineering
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• v.16 no.4
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• pp.491-495
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• 2005

Vanadium pentoxide xerogels with a doping ratio of $Al/V_2O_5$ ranging from 0.01 to 0.05 were synthesized by doping Al into $V_2O_5$ xerogel via the sol-gel process. By using the synthesized $Al_xV_2O_5$, the $Li/Al_xV_2O_5$ cells were assembled to investigate the chemical and electrochemical properties. Surface morphology of the $Al_xV_2O_5$ xerogel showed an anisotropic corrugated sheet-like matrix, and the interlayer distance was about $11.5{\AA}$. The IR spectra of the $Al_xV_2O_5$ revealed that the doped Al was coordinated to the vanadyl group in $V_2O_5$. The $Al_xV_2O_5$ xerogels showed enhanced reversibility and energy density compared with the $V_2O_5$ xerogel. The specific capacity of the $Al_{0.05}V_2O_5$ xerogel was more than 200 mAh/g at 10 mA/g discharge rate, and cycle efficiency was about 90% after the 31st cycling test between 1.9 V and 3.9 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.291-294
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• 2000

The crystallization behavior and dc Conductivities of CuO-P$_2$O$_{5}$ -Nb$_2$O$_{5}$ -V$_2$O$_{5}$ glasses prepared by quenching on the copper plate were investigated. The conductivities of the glasses were range from 10$^{-5}$ s.$cm^{-1}$ / at room temperature, but the conductivities of the glass-ceramics were 10$^{-3}$ s.$cm^{-1}$ / increased by 10$^2$order. The crystalline product in the glass-ceramics was CuV$_2$O$_{6}$ . The linear relationship between in($\sigma$T) and T$^{-1}$ suggested that the electrical conduction in the present glass-ceramics would be due to a small polaron hopping mechanism.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1018-1021
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• 2001

1018-1021 The CuO-P$_2$O$_{5}$ containing P$_2$O$_{5}$ as glass-former were prepared by press-quenching method on the copper plate. By post-heat treatment of these glasses, the CuO-P$_2$O$_{5}$ -V$_2$O$_{5}$ -g1ass ceramics was obtained and the crystallization behavior and dc conductivities were investigovted. The heat-treated glass-ceramics decreased in electrical conductivity by the order of 10$^1$ compared to amorphous glass. The linear relationship between In($\sigma$T) and T$^{-1}$ indicated that electrical conduction in CuO-P$_2$O$_{5}$ -V$_2$O$_{5}$ -gass occurred by a small polaron hopping.

• Proceedings of the KIEE Conference
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• 2007.11c
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• pp.138-140
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• 2007

$TiO_2-V_2O_5$ sol was fabricated using sol-gel method and $TiO_2-V_2O_5$ thin films were fabricated using dip-coating method. $V_2O_5$ sol was added 0.01mo1e, 0.03mo1e, 0.05mo1e into $TiO_2$ sol. Viscosity of sol increased fast from about 1,000 minutes and sol began gelation from about 10,000 minutes. As a results of crystalline properties, $V_2O_5$ peaks were not found despite of $V_2O_5$ addition. Endothermic reaction occurred due to evaporation of solvent and dissociation of OH at $80^{\circ}C$. Exothermic reaction occurred due to combustion and oxidation of solvent at $230^{\circ}C$, occurred to combustion and oxidation of alkyl group at $350^{\circ}C$. Thickness of thin films increased $0.1{\sim}0.25{\mu}m$ every a dipping.