• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1103-1106
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• 2006

We have presented a comprehensive study on threshold voltage $(V_{th})$ control of organic thin-film transistors (OTFTs) with dual-gate structure. The fabrication of dual-gate pentacene OTFTs using plasma-enhanced atomic layer deposited (PEALD) 150 nm thick $Al_2O_3$ as a bottom gate dielectric and 300 nm thick parylene or PEALD 200 nm thick $Al_2O_3$ as both a top gate dielectric and a passivation layer is reported. The $V_{th}$ of OTFT with 300 nm thick parylene as a top gate dielectric is changed from 4.7 V to 1.3 V and that with PEALD 200 nm thick $Al_2O_3$ as a top gate dielectric is changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode is changed from -10 V to 10 V. The change of $V_{th}$ of OTFT with dual-gate structure has been successfully understood by an analysis of electrostatic potential.

• Journal of Information Display
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• v.7 no.3
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• pp.27-30
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• 2006

This paper presents a comprehensive study on threshold voltage $(V_{th})$ control of organic thin-film transistors (OTFTs) with dual-gate structure. The fabrication of dual-gate pentacene OTFTs using plasma-enhanced atomic layer deposited (PEALD) 150 nm thick $Al_{2}O_{3}$ as a bottom gate dielectric and 300 nm thick parylene or PEALD 200 nm thick $Al_{2}O_{3}$ as both a top gate dielectric and a passivation layer was investigated. The $V_{th}$ of OTFT with 300 nm thick parylene as a top gate dielectric was changed from 4.7 V to 1.3 V and that with PEALD 200 nm thick $Al_{2}O_{3}$ as a top gate dielectric was changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode was changed from -10 V to 10 V. The change of $V_{th}$ of OTFT with dual-gate structure was successfully investigated by an analysis of electrostatic potential.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.2
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• pp.165-173
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• 2019

Lithium anodes (13, 15, 17, and 20 wt% Li) were fabricated by mixing molten lithium and iron powder, which was used as a binder to hold the molten lithium, at about $500^{\circ}C$ (discharge temp.). In this study, the effect of applied pressure and lithium content on the discharge properties of a thermal battery's single cell was investigated. A single cell using a Li anode with a lithium content of less than 15 wt% presented reliable performance without any abrupt voltage drop resulting from molten lithium leakage under an applied pressure of less than $6kgf/cm^2$. Furthermore, it was confirmed that even when the solid electrolyte is thinner, the Li anode of the single cell normally discharges well without a deterioration in performance. The Li anode of the single cell presented a significantly improved open-circuit voltage of 2.06 V, compared to that of a Li-Si anode (1.93 V). The cut-off voltage and specific capacity were 1.83 V and $1,380As\;g^{-1}$ (Li anode), and 1.72 V and $1,364As\;g^{-1}$ (Li-Si anode). Additionally, the Li anode exhibited a stable and flat discharge curve until 1.83 V because of the absence of phase change phenomena of Li metal and a subsequent rapid voltage drop below 1.83 V due to the complete depletion of Li at the end state of discharge. On the other hand, the voltage of the Li-Si anode cell decreased in steps, $1.93V{\rightarrow}1.72V(Li_{13}Si_4{\rightarrow}Li_7Si_3){\rightarrow}1.65V(Li_7Si_3{\rightarrow}Li_{12}Si_7)$, according to the Li-Si phase changes during the discharge reaction. The energy density of the Li anode cell was $807.1Wh\;l^{-1}$, which was about 50% higher than that of the Li-Si cell ($522.2Wh\;l^{-1}$).

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.7
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• pp.33-39
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• 2015

In this work, SU-8 passivated IZO thin-film transistors(TFTs) made by solution-processes was investigated for enhancing stability of indium zinc oxide(IZO) TFT. A very viscous negative photoresist SU-8, which has high mechanical and chemical stability, was deposited by spin coating and patterned on top of TFT by photo lithography. To investigate the enhanced electrical performances by using SU-8 passivation layer, the TFT devices were analyzed by X-ray phtoelectron spectroscopy(XPS) and Fourier transform infrared spectroscopy(FTIR). The TFTs with SU-8 passivation layer show good electrical characterestics, such as ${\mu}_{FE}=6.43cm^2/V{\cdot}s$, $V_{th}=7.1V$, $I_{on/off}=10^6$, SS=0.88V/dec, and especially 3.6V of ${\Delta}V_{th}$ under positive bias stress (PBS) for 3600s. On the other hand, without SU-8 passivation, ${\Delta}V_{th}$ was 7.7V. XPS and FTIR analyses results showed that SU-8 passivation layer prevents the oxygen desorption/adsorption processes significantly, and this feature makes the effectiveness of SU-8 passivation layer for PBS.

• Korean Journal of Food Science and Technology
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• v.26 no.3
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• pp.204-212
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• 1994

To estimate the possibility of wine-making with Korean dried persimmon, its homogenized and filtered solution was fermented at $15^{\circ}C$ and $25^{\circ}C$ for 12 weeks with Saccharomyces cerevisiae (Japan Alcoholic Beverage Association N0.7). Sugars of dried persimmon were mainly composed of 27.02% of glucose, 19.81% of fructose and 5.12% of mannose. In the fermentation at $25^{\circ}C$, glucose was almost completely consumed in 8 days, but fructose and mannose were consumed up to 64% and 74%, respectively, in the same period and were not utilized any more afterwards. In the fermentation at $15^{\circ}C$, 75% of glucose, 20% of fructose and 49% of mannose were consumed in 8 days and these sugars were continuously utilized for 12 weeks. Organic acids in the homogenized and filtered solution were levulinic acid (148.6 mg%), 4-methylvaleric acid (73.5 mg%), oxalic acid (28.7 mg%), acetic acid (8.5 mg%), N-butyric acid (8.4 mg%) and succinic acid (6.7 mg%). Irrespective of fermentation temperature, levulinic acid rapidly reduced according to progression of fermentation. Oxalic acid, N-butyric acid and succinic acid decreased at 2nd day of fermentation, and then increased at 4th and 6th days and subsequently decreased again under the levels of the solution. Acetic acid and 4-methylvaleric acid increased with the proceeding of fermentation and at 12th week of fermentation these contents were more than those of the solution. The contents of total free amino acid significantly reduced at 2th day of fermentation and then increased to the level of the solution at 12th week irrespective of fermentation temperature. Ethanol content rapidly increased to the levels of 5.3(v/v) at $15^{\circ}C$ and 9.4%(v/v) at $25^{\circ}C$ to 8th day after fermentation, but at 12th week its content was 14.5%(v/v) at $15^{\circ}C$ and 9.4%(v/v) at $25^{\circ}C$. The higher alcohots identified were 2-methyl-l-propanol, 3-methyl-ibutanol, 2-methyl-l-butanol and 2-methyl-2-propanol and the range of those contents was from 0.001% (v/v) to 0.06%(v/v). The color of the wine fermented at $15^{\circ}C$ was slightly superior but flavor and taste were slightly superior in the wine fermented at $25^{\circ}C$.

• Korean Chemical Engineering Research
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• v.48 no.6
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• pp.737-740
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• 2010

High leakage current and threshold voltage shift(${\Delta}Vth$) are demerits of a-Si:H TFT. These characteristics are influenced by gate insulator and active layer film quality, surface roughness, and process conditions. The purpose of this investigation is to improve off current($I_{off}$) and ${\Delta}V_{th}$ characteristics. Nitrogen-rich deposition condition was applied to gate insulator, and hydrogen-rich deposition condition was applied to active layer to reduce electron trap site and improve film density. $I_{off}$ improved from 1.01 pA to 0.18 pA at $65^{\circ}C$, and ${\Delta}V_{th}$ improved from -1.89 V to 1.22 V.

• Journal of Radiation Protection and Research
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• v.34 no.4
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• pp.190-194
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• 2009

Gamma spectral results for macroalgae samples taken from the environment of Ulchin nuclear power plants in Korea (east coast), showed 766 keV peaks, which were identified as $^{95}Nb$ by several research institutes. After the enhancement of liquid radioactive waste disposal facility at Ulchin NPP site, the $^{95}Nb$ amount in the liquid radioactive waste outflow has drastically reduced, but the expected reduction in $^{95}Nb$ specific activity from environmental samples did not actually show up on gamma spectroscopy. Detailed re-investigation revealed that along with 766 keV peak, other peaks (63, 92 and 1001 keV) from $^{234}Th-^{234}mPa$ decay series were also detected on spectroscopy, and that the measured half lives of the four peaks were very close to known half life of $^{234}Th-^{234}mPa$ decay series, which is 24.1 day. The measured gamma yield ratios of 766 keV peak to 1001 peak were very close to known ratio 0.35 for $^{234}mPa$. It is concluded that 766 keV peaks on gamma spectroscopy of Ulchin NPP environmental samples were mainly from $^{234}mPa$, which is one of naturally occurring radionuclides.

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.249.2-249.2
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• 2008

• Journal of environmental and Sanitary engineering
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• v.9 no.1
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• pp.89-96
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• 1994

This report was investigate the biological characteristic of $\delta$-endotoxin of product by TH109 strain, one strain TH109 which has toxicity on Cockroach is isolate and identification. Generally the $\delta$-endotoxin of product by 3. thuringiensis strain was easily soluble in acid, alkaline and organic solvents but $\delta$-endotoxin of product by TH109 strain are insoluble in HCI, NaOH Thiol- reagent(25mM Dithiotheritol, 25mM Dithioeryritol, 25mM Nathioglycolate, 0.2M ESCN, 2% v/v $\beta$-mecaptethanol), organic solvents( acetone, $CCI_{4}$, ether, dioxin MeOH chloroforrh xylene ), Protease. Through this study of $\delta$-endotoxin produced by TH109 strain is insoluble in acid, alkaline, organic solvents and pretense etc. In the point of view, it is greater possibility that $\delta$-endotoxin will be transform into toxin by the reducible materials instead of the reaction of protease in the intestine.

• The Magazine of the Society of Air-Conditioning and Refrigerating Engineers of Korea
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• v.13 no.2
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• pp.58-66
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• 1984