• Journal of the Korean Ceramic Society
• /
• v.19 no.4
• /
• pp.267-274
• /
• 1982

The sintering behavior and B-H loop properties of $Li_{0.5O4}$ with the addition of $Nb_2O_5$ and $V_2O_5$ have been investigated by observation of microstructures and measurement of semi-static hysteresis loops. The sintering temperature was lowered by the additions of $Nb_2O_5$ and $V_2O_5$ and the effect of $V_2O_5$ addition was greater than that of $Nb_2O_5$. The abnormal grain growth was observed at about 100$0^{\circ}C$(d:4.6g/㎤) and 85$0^{\circ}C$(d:4.5g/㎤) in the specimens with the addition of $Nb_2O_5$ and $V_2O_5$ respectively. The addition of $Nb_2O_5$ retulted in a large and uniform grain size, and the addition of $V_2O_5$ resulted in a uniform grain size but the final density was lower than that of the pure specimen. The squareness was increased and the coercive force was decreased by the addition of $Nb_2O_5$, and the squareness was decreased and the coercive force was increased by the addition of $V_2O_5$. These effects could be explained by a large and uniform grain size, and by a lower final density of specimens with the addition of $Nb_2O_5$ and $V_2O_5$ respectively.

• Journal of the Korean Ceramic Society
• /
• v.25 no.4
• /
• pp.335-340
• /
• 1988

The change in microstructure and the electrical properties of Pb(In1/2Nb1/2)O3-PbTiO3 Ceramics caused by V2O5 addition were studied. The results are ; 1. interability was increased because the mass transport through the second phase formed by V2O5 addition increased. 2. ith addition of V2O5, tetragonality and Curie temperature increased. The maximum value of kp was observed when 0.5wt% of V2O5 was added. 3. he second phase formed by V2O5 accelerated the grain growth, and existed in grain boundary. Electrical properties were changed by corelations between tetragonality and the amount of second phase.

• Journal of the Korean Ceramic Society
• /
• v.16 no.1
• /
• pp.26-30
• /
• 1979

The microstructures and memory core characteristics of substituted lithium ferrites with addition of $Bi_2O_3$, $V_2O_5$, $Nb_2O_3$, and $P_2O_5$ were investigated. The effects of composite flux on the sintering of the substituted lithium ferrites were also studied. The results show that the addition of $Bi_2O_3$, $V_2O_5$, and $Nb_2O_5$ enhances sintering whereas $Sb_2O_3$ and $P_2O_5$ inhibits it, and that the addition of $Nb_2O_5$ results in uniform grain size while the addition of $Bi_2O_3$ or $V_2O_5$ results in non-uniformity in grain size. When $P_2O_5$ was added with $V_2O_5$ or $Bi_2O_3$, however, it results in uniform grain size and improved memory core properties.

• Journal of the Korean Magnetics Society
• /
• v.2 no.3
• /
• pp.222-227
• /
• 1992

The effects of $V_2O_5$ addition as an additive on the densification, the microstructure and the magnetic properties of Mn-Zn ferrites were studied. The maximum density was observed at 0.1 wt% $V_2O_5$ content and it was recognized that a small content of $V_2O_5$ prohibited the discontinuous grain growth. The initial permeability showed maximum at 0.1 wt% $V_2O_5$ content and the power loss minimum at 0.03 wt% $V_2O_5$ content. It was found that a small content of $V_2O_5$ went into solid solution in the Mn-Zn ferrites, but above that extent $V_2O_5$ formed a second phase to be segregated at the grain boundaries.

• Journal of the Korean Ceramic Society
• /
• v.37 no.4
• /
• pp.295-301
• /
• 2000

The effect of V2O5 addition on the low temperature sintering of Pb(Mn1/3Sb2/3)O3-PZT ceramics, which is known as a prominent material for piezoelectric transformer application was studied, and the densification behavior and piezoelectric characteristics of the samples as a function of heating rate were also examined. V2O5 led the system to liquid phase sintering by forming liquid phase during sintering, which accelerated densification through the particle rearrangement in the early stage of sintering. The liquid phase mostly existed at grain boundaries retarded the evaporation of PbO, while the densification temperature and the weight loss of V2O5-free samples were higher than those of samples with V2O5. Faster heating improved the densification of the samples regardless of V2O5 addition. The low temperature sintering at 100$0^{\circ}C$ was achieved in PMS-PZT ceramics with high density and reasonable dielectric and piezoelectric characteristics. This result revealed optimistic way to the development of multi-layered piezoelectric transformers.

• Korean Journal of Crystallography
• /
• v.17 no.1
• /
• pp.24-32
• /
• 2006

The microwave dielectric properties of $Zn_3Nb_2O_8\;with\;V_2O_5$ addition were investigated. The addition of $V_2O_5$ enhanced the sinterability of $Zn_3Nb_2O_8$, which resulted in high density of $Zn_3Nb_2O_8$ ceramic greater than 95% of the theoretical value when sintered at $900^{\circ}C$ for 4 hours. X-ray diffraction analysis of sintered $Zn_3Nb_2O_8$ ceramic showed no second phase with $V_2O_5$ addition. Dielectric permittivity(${\varepsilon}_r$) and quality factor($Q{\times}f$) varied with both density at different sintering temperature and $V_2O_5$ addition. Dielectric permittivity, quality factor and temperature coefficient($T_{cf}$) of the two mole of $V_2O_5\;added\;Zn_3Nb_2O_8$ that was sintered at $900^{\circ}C$ were 21.4, 40,000, $-54ppm/^{\circ}C$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.8
• /
• pp.676-680
• /
• 2003

In this study, to develop the low temperature sintering ceramics for piezoelectric transformer, PSN-PNN-PZT system ceramics were manufactured as a function of V$_2$O$_{5}$ addition, that is the low melting point oxide. Its dielectric and piezoelectric characteristics were investigated. With increasing the amount of V$_2$O$_{5}$ addition, electromechanical coupling factor(kp) and mechanical quality factor(Qm) were decreased. For piezoelectric transformer application, the 0.1wt% V$_2$O$_{5}$ added specimen sintered at 1,00$0^{\circ}C$ showed the proper value of $\varepsilon$r=1,590, kp=0.51 and Qm=748.m=748.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.797-800
• /
• 2002

Instead of a solution process producing amorphous $LiV_3O_8$ form, we prepared Lithium vanadate glass by melting $Li_2O-P_2O_5-V_2O_5$ and $Li_2O-P_2O_5-Bi_2O_3-V_2O_5$ composition in pt. crucible and by quenching on the copper plate. From the crystallization of $Li_2O-P_2O_5-V_2O_5$ and $Li_2O-P_2O_5-Bi_2O_3-V_2O_5$, we could abtain glass-ceramics having crystal phase, LiV3O8 from glass matrix. The material heat-treated at lower-temperature, $250^{\circ}C$ had less crystalline and lower capacity, But the material heat-treadted at higher-temperature, $330^{\circ}C$ had higher capacity and $Li_2O-P_2O_5-V_2O_5$ glass-ceramics had higher capacity than $Li_2O-P_2O_5-Bi_2O_3-V_2O_5$ glass-ceramics.

• Korean Journal of Materials Research
• /
• v.19 no.11
• /
• pp.613-618
• /
• 2009

We designed new compositions for lead free and low temperature sealing glass frit of $ZnO-V_2O_5-P_2O_5$ system, which can be used for PDP (Plasma Display Panel) or other electronic devices. The $ZnO-V_2O_5-P_2O_5$ system can be used as a sealing material at temperatures even lower than 430$^{\circ}C$. This system, however, showed lower bonding strength with glass substrate compared to commercialized Pb based sealing materials. So, we added $TiO_2$ as a promoter for bonding strength. We examined the effect of $TiO_2$ addition on sealing behaviors of $ZnO-V_2O_5-P_2O_5$ glasses with the data for flow button, wetting angle, temporary & permanent residual stress of glass substrate, EPMA analysis of interface between sealing materials and glass substrate, and bonding strength. As a result, sealing characteristics of $ZnO-V_2O_5-P_2O_5$ system glasses were improved with $TiO_2$ addition, but showed a maximum value at 5 mol% $TiO_2$ addition. The reason for improved bonding characteristics was considered to be the chemical interaction between glass substrate and sealing glass, and structural densification of sealing glass itself.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.11
• /
• pp.975-978
• /
• 2003

The microwave dielectric properties and the microstructures on B $i_{0.97}$T $m_{0.03}$Nb $O_4$ doped with $V_2$ $O_{5}$ were systematically investigated. B $i_{0.97}$T $m_{0.03}$Nb $O_4$ ceramics sintered at 920-96$0^{\circ}C$ were mainly consisted of orthorhombic and triclinic phases after addition of $V_2$ $O_{5}$. The apparent density increased slightly with increasing the $V_2$ $O_{5}$ addition. The dielectric constants($\varepsilon$$_{r}$) also increased with $V_2$ $O_{5}$ addition(30-45). The Q${\times}$ $f_{0}$ values measured on B $i_{0.97}$T $m_{0.03}$Nb $O_4$ ceramics doped with $V_2$ $O_{5}$ were between 2,000 and 12,000[GHz] when the sintering temperatures were in the range of 920-960[$^{\circ}C$]. It was confirmed that the temperature coefficient of the resonant frequency($\tau$$_{f}$) can be adjusted from a positive value of +10ppm/$^{\circ}C$ to a negative value of -15ppm/$^{\circ}C$ by increasing the amount of $V_2$ $O_{5}$ Based on our experimental results, the B $i_{0.97}$T $m_{0.03}$Nb $O_4$(added $V_2$ $O_{5}$) ceramics can be applied to multilayer microwave devices at low sintering temperatures.ng temperatures.emperatures.ratures.