• Title/Summary/Keyword: $UV/O_2$

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Improvement of the characteristics of ZnO thin films using ZnO buffer layer (ZnO 저온 성장 버퍼에 의한 ZnO 박막의 특성 향상)

  • Pang, Seong-Sik;Kang, Jeong-Seok;Kang, Hong-Seong;Shim, Eun-Sub;Lee, Sang-Yeol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.04b
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    • pp.65-68
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    • 2002
  • The effect of low-temperature ZnO buffer layer has been investigated for the optical properties of ZnO thin films. ZnO buffers and thin films have been deposited using the pulsed laser deposition technique. ZnO buffer layers were grown at $200^{\circ}C$ with various thickness of 0 to 60 nm, followed by raising the substrate temperature to $400^{\circ}C$ to grow $2{\mu}m$ ZnO thin films. The buffer layers could relax stresses induced by the lattice mismatch and different thermal expansion coefficients between ZnO thin films and sapphire substrate. In order to identify the optical properties of ZnO thin films, PL measurement was used. From the results of PL measurement, all the fabricated ZnO thin films with buffer layers have shown intensive UV emission with a narrow linewidth. ZnO thin films with buffer layer of 20 nm have shown the strongest UV emission. It was found that the use of ZnO buffer layer plays an important role to improve the intensive UV emission of the ZnO thin films.

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Thermal Stability of Photo-produced H3O+ in the Photolyzed Water-ice Film

  • Moon, Eui-Seong;Kang, Heon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.192-192
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    • 2011
  • Hyperthermal ion scattering experiments were conducted with low kinetic energy (<35 eV) cesium ion beams to analyze the UV-photolyzed water-ice films. Neutral molecules (X) on the surface were detected as cesium-molecule ion clusters ($CsX^+$) which were formed through a Reactive Ion Scattering (RIS) process. Ionic species on the surface were desorbed from the surface via a low energy sputtering (LES) process, and were analyzed [1]. Using these methods, the thermal stability of hydronium ion ($H_3O^+$) that was produced by UV light was examined. As the thermal stability of $H_3O^+$ is related with the reaction, $H_3O^+$ + OH + $e^-$ (or $OH^-$) ${\rightarrow}$ $2H_2O$, which is similar or same with the reverse reaction of the auto-ionization of water, the result from this work would be helpful to understand the auto-ionization of $H_2O$ in water-ice that has not been well-understood yet. However, as $H_3O^+$ was not detected through a LES method, the titration experiment of $H_3O^+$ with methylamine ($CH_3NH_2$, MA), MA + $H_3O^+\;{\rightarrow}\;MAH^+$ + $H_2O$, was conducted. In this case, the presence of $MAH^+$ indicates that of $H_3O^+$ in the ice. Thus the pristine ice was photolyzed with UV light for a few minutes and this photolyzed ice was remained at the certain temperature for minutes without UV light. Then MA was adsorbed on that surface so that the population of $H_3O^+$ was found. From the calibration experiments, the relation of $MAH^+$ and $H_3O^+$ was found, so that the thermal stability of $H_3O^+$ can be investigated [2].

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Properties of TiO2 thin films fabricated with surfactant by a sol-gel method (Sol-gel 법에 의하여 제조된 계면활성제 첨가 TiO2 박막 특성)

  • Kim, Jin-Ho;Jung, Hyun-Ho;Hwang, Jong-Hee;Cho, Yong-Seok;Lim, Tae-Young
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.20 no.6
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    • pp.267-271
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    • 2010
  • Super hydrophilic and high transparent $TiO_2$ thin films were successfully fabricated by sol-gel method without an irradiation of UV light. In addition, surfactant Tween 80 was used for increasing the transmittance of the thin films. When the contents of Tween 80 in $TiO_2$ solution were 0.0, 1.0, 3.0, 5.0 wt%, the transmittance of $TiO_2$ thin films was ca. 74.31%, 74.25%, 79.69%, 81.99% at 550 nm wavelength, respectively. The contact angles of fabricated $TiO_2$ thin films with or without Tween 80 were from ca. $4.0^{\circ}$ to $4.5^{\circ}$. The $TiO_2$ thin films annealed over $400^{\circ}C$ showed anatase crystal structure and the photocatalytic property that decomposed methyl orange with UV irradiation. The surface morphologies, optical properties and contact angle of prepared thin films with different contents of Tween 80 were evaluated by field emission scanning electron microscope (FE-SEM), X-ray diffratometer (XRD), UV-Vis spectrophotometer and contact angle meter.

Preparation and photocatalytic degradation of CNT/TiO2 composites using MWCNT and various titanium alkoxide precursors (MWCNT와 여러가지 티탄알콕사이드 전구체를 사용하여 CNT/TiO2 복합체의 제조와 광촉매분해)

  • Chen, Ming-Liang;Zhang, Feng-Jun;Oh, Won-Chun
    • Analytical Science and Technology
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    • v.21 no.6
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    • pp.553-561
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    • 2008
  • $CNT/TiO_2$ composites were prepared by using multiwall carbon nanotubes (MWCNT) and various titanium alkoxide precursors. The composites were comprehensively characterized by scanning electron microscopy (SEM), field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), energy dispersive X-ray analysis (EDX) and UV-vis absorption spectroscopy. The photoactivity of the prepared materials under UV irradiation, was tested using the conversion of MB from model aqueous solution. Finally, according to the results of methylene blue (MB) removal experiment, we could see that sample CTOS have better MB removal effect than samples CTIP and CTPP.

A Study on the Decomposition of Water Soluble Dyes by UV/TiO2 (UV/TiO2에 의한 수용성 염료의 분해에 관한 연구)

  • 정갑섭
    • Journal of Environmental Science International
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    • v.12 no.3
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    • pp.319-324
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    • 2003
  • The characteristics of photocatalytic decomposition of dye waste water by titanium dioxide was studied in a batch reactor under constant strength of ultra-violet ray. The decomposition rate of methyl orange by TiO$_2$ was pseudo-first order, anatase type TiO$_2$ was more effective than rutile type below the dosage of 5g. The decomposition rate was increased with decreasing initial pH, increasing reaction temperature and oxidant concentration. The decomposition rate of water soluble dyes was decreased in order of rhodamine B>eosin Y>methyl orange.

Characteristics of ITO with surface treatment by N2, O2, Ar Plasma and UV (질소, 산소, 아르곤 플라즈마와 자외선에 의하여 표면 처리한 ITO의 특성)

  • Bae, Gyeong-Tae;Jeong, Seon-Yeong;Gang, Seong-Ho;Kim, Hyeon-Gi;Kim, Byeong-Jin;Ju, Seong-Hu
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2018.06a
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    • pp.90-90
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    • 2018
  • 디스플레이는 다수의 가로 전극과 세로 전극으로 구성되고, 전극에 신호를 주어 동작하도록 하는 원리이다. 이 디스플레이에는 전기가 통하고 투명한 전극이 필수적으로 사용되고 있고, 대표적인 투명 전극으로 ITO (Indium Tin Oxide)가 있다. ITO 박막은 $In_2O_3$에 Sn을 첨가하여 $Sn^{4+}$ 이온이 $In^{3+}$ 이온을 치환하고 이 과정에서 잉여 전자가 전기전도에 기여하는 구조이다. ITO 박막은 표면 처리 방법에 따라 표면 상태가 크게 변화한다. 플라즈마를 이용한 표면 처리는 환경오염이 적으며 강도, 탄성률 등과 같은 재료의 기계적 특성을 변화시키지 않으면서 표면 특성만을 변화시킬 수 있는 방법으로 알려져 있다[1]. UV (Ultraviolet)를 조사한 표면처리는 ITO 표면의 탄소를 제거하고, 표면 쌍극자를 형성하며, 표면의 조성을 변화시킬 수 있으며, 페르미 에너지 준위를 이동시킬 수 있어 ITO의 일함수를 증가시킬 수 있다[2]. ITO에 대한 다양한 연구가 수행되었음에도 불구하고 보다 다양한 관점에서의 연구가 지속될 필요가 있다. 따라서 본 연구에서는 다양한 조건으로 표면 처리한 ITO 표면의 일함수, 면저항, 표면 형상, 평탄도, 접촉각 등에 대해 알아보고자 한다. 세정한 ITO, 세정 후 UV 처리한 ITO (UV 처리 시간 2분, 4분 6분, 8분), 세정 후 $N_2$, $O_2$, Ar의 공정 가스를 사용하여 Plasma 처리한 ITO로 표면 처리 조건을 변화하였다. 표면 처리한 ITO의 특성은 Kelvin Probe를 이용한 일함수, 물방울 형상의 각도를 측정한 접촉각, AFM (Atomic Force Microscope)을 이용한 평탄도, 가시광선 (380~780 nm) 파장에 대한 투과도와 면저항을 측정하였다. 접촉각은 세정한 ITO의 경우 $45.5^{\circ}$에서 세정 후 UV를 조사한 ITO의 경우 UV 8분 조사 시 $27.86^{\circ}$로 감소하였고, $N_2$, $O_2$, Ar 가스를 사용하여 Plasma 처리한 ITO는 모두 $10^{\circ}$ 미만을 나타내었다. 플라즈마 처리에 의하여 접촉각이 현저하게 개선되었다. ITO의 면저항은 표면 처리 조건에 따라 $9.620{\sim}9.903{\Omega}/{\square}$로 그 차이가 매우 적어 표면처리에 의하여 면저항의 변화는 없는 것으로 판단된다. 가시광선 영역에서의 투과도는 공정 조건에 따라 87.59 ~ 89.39%로 그 차이가 적어 표면처리에 의한 변화를 나타내지는 않은 것으로 판단된다. 표면 처리 조건에 따른 평탄도 $R_{rms}$는 세정한 ITO의 경우 4.501 nm로부터 UV 2, 4, 6, 8분 처리한 경우 2.797, 2.659, 2.538, 2.584 nm로 평탄도가 개선되었다. $N_2$, $O_2$, Ar 가스를 사용하여 플라즈마 처리한 ITO의 경우 평탄도 $R_{rms}$는 2.49, 4.715, 4.176 nm로 사용한 가스의 종류에 따라 다른 경향을 나타내었다. 표면 처리 조건에 따른 평탄도 Ra는 세정한 ITO의 경우 3.521 nm로부터 UV 2, 4, 6, 8분 처리한 경우 1.858, 1.967, 1.896, 1.942 nm를, $N_2$, $O_2$, Ar 가스를 사용하여 플라즈마 처리한 ITO의 경우는 1.744, 3.206, 3.251 nm로 평탄도 $R_{rms}$와 유사한 경향을 나타내었다.

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The Study of TSEE and TSL Phenomena on α-A12O3 Single Crystals Using the 2π Proportional Counter (2π 비례계수기에 의한 α-A12O3 단결정의 TSEE와 TSL 현상에 관한 연구)

  • Doo, Ha-Young;Sim, Sang-Hung
    • Journal of Korean Ophthalmic Optics Society
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    • v.9 no.1
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    • pp.69-73
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    • 2004
  • TSEE and TSL phenomena have been measured for ${\alpha}-Al_2O_3$ single crystals by the use of the $2{\pi}$ proportional counter. The ${\alpha}-Al_2O_3$ crystals irradiated to X-ray and UV for the temperature range from room temperature to about 500k degree. Three peaks of TSEE and three peaks of TSL were observed after X-ray irradiation. Also, two peaks of TSEE and three TSL peaks were observed after UV irradiation. TSEE and TSL glow curves of ${\alpha}-Al_2O_3$ single crystals showed very similar to the peaks position regardless of excitation sorts. Form this work, we knew that the $2{\pi}$ proportional counter is useful to not only the energy spectrum analysis device of ${\alpha}$-particle, but also the measurement instrument of TSEE and TSL.

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Dry cleaning for metallic contaminants removal after the chemical mechanical polishing (CMP) process (Chemical Mechnical Polishing(CMP) 공정후의 금속오염의 제거를 위한 건식세정)

  • 전부용;이종무
    • Journal of the Korean Vacuum Society
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    • v.9 no.2
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    • pp.102-109
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    • 2000
  • It is difficult to meet the cleanliness requirement of $10^{10}/\textrm{cm}^2$ for the giga level device fabrication with mechanical cleaning techniques like scrubbing which is widely used to remove the particles generated during Chemical Mechanical Polishing (CMP) processes. Therefore, the second cleaning process is needed to remove metallic contaminants which were not completely removed during the mechanical cleaning process. In this paper the experimental results for the removal of the metallic contaminants existing on the wafer surface using remote plasma $H_2$ cleaning and UV/$O_3$ cleaning techniques are reported. In the remote plasma $H_2$ cleaning the efficiency of contaminants removal increases with decreasing the plasma exposure time and increasing the rf-power. Also the optimum process conditions for the removal of K, Fe and Cu impurities which are easily found on the wafer surface after CMP processes are the plasma exposure time of 1min and the rf-power of 100 W. The surface roughness decreased by 30-50 % after remote plasma $H_2$ cleaning. On the other hand, the highest efficiency of K, Fe and Cu impurities removal was achieved for the UV exposure time of 30 sec. The removal mechanism of the metallic contaminants like K, Fe and Cu in the remote plasma $H_2$ and the UV/$O_3$ cleaning processes is as follows: the metal atoms are lifted off by $SiO^*$ when the $SiO^*$is evaporated after the chemical $SiO_2$ formed under the metal atoms reacts with $H^+ \; and\; e^-$ to form $SiO^*$.

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A Study for TOC & UV/VIS Absorbance of Humic Acid in Ozonation (오존처리시 부식산의 흡광도 및 총유기탄소량 변화에 관한 연구)

  • Kim, Kei-Woul;Han, Mi-Duck;Shin, Sung-Hee;Rhee, Dong-Seok
    • Journal of Industrial Technology
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    • v.18
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    • pp.417-423
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    • 1998
  • Experiments were performed to evaluate UV/VIS absorbance and TOC of humic acid solutions which were ozonated at different pH values. The optimum conditions for ozonation of humic acid from this study are pH 9 (buffered) and 0.84 ($H_2O_2/HA$, w/w) for $H_2O_2$ dosage.

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Photooxidation of Poly(vinyl butyral) Films by UV/Ozone Irradiation (자외선/오존 조사에 의한 Poly(vinyl butyral)의 광산화)

  • Joo, Jin-Woo;Jang, Jinho
    • Textile Coloration and Finishing
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    • v.27 no.2
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    • pp.113-118
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    • 2015
  • Poly(vinyl butyral), PVB was photooxidized by UV/ozone irradiation and the effect of UV energy on the surface properties of the UV-irradiated PVB film were investigated by the measurement of reflectance, surface roughness, contact angles, elemental composition, and zeta potential. With increasing UV energy, reflectance decreased in the visible and ultraviolet regions particularly at the wavelength of 400nm. The irradiation produced nano-scale surface roughness including the maximum peak-to-valley roughness increased from 274nm for the unirradiated PVB to 370nm at the UV energy of $5.3J/cm^2$. The improved hydrophilicity was due to the higher $O_{1s}/C_{1s}$ resulting from the introduction of polar groups such as C=O bonds. The surface energy of the PVB film increased from $35.3mJ/m^2$ to $39.3mJ/m^2$ at the irradiation of $15.9J/cm^2$. While the zeta potentials decreased proportionally with increasing UV energy, the cationic dyeability of the PVB increased accordingly resulting from the improved affinity of the irradiated PVB surfaces containing the photochemically introduced anionic and dipolar dyeing sites.