• 제목/요약/키워드: $UV/H_2O_2$ process

검색결과 195건 처리시간 0.037초

Visible Light Driven ZnFe2Ta2O9 Catalyzed Decomposition of H2S for Solar Hydrogen Production

  • Subramanian, Esakkiappan;Baeg, Jin-Ook;Kale, Bharat B.;Lee, Sang-Mi;Moon, Sang-Jin;Kong, Ki-Jeong
    • Bulletin of the Korean Chemical Society
    • /
    • 제28권11호
    • /
    • pp.2089-2092
    • /
    • 2007
  • Tantalum-containing metal oxides, well known for their efficiency in water splitting and H2 production, have never been used in visible light driven photodecomposition of H2S and H2 production. The present work is an attempt in this direction and investigates their efficiency. A mixed metal oxide, ZnFe2Ta2O9, with the inclusion of Fe2O3 to impart color, was prepared by the conventional ceramic route in single- and double-calcinations (represented as ZnFe2Ta2O9-SC and ZnFe2Ta2O9-DC respectively). The XRD characterization shows that both have identical patterns and reveals tetragonal structure to a major extent and a minor contribution of orthorhombic crystalline system. The UV-visible diffuse reflection spectra demonstrate the intense, coherent and wide absorption of visible light by both the catalysts, with absorption edge at 650 nm, giving rise to a band gap of 1.9 eV. Between the two catalysts, however, ZnFe2Ta2O9-DC has greater absorption in almost the entire wavelength region, which accounts for its strong brown coloration than ZnFe2Ta2O9-SC when viewed by the naked eye. In photocatalysis, both catalysts decompose H2S under visible light irradiation (λ ≥ 420 nm) and produce solar H2 at a much higher rate than previously reported catalysts. Nevertheless, ZnFe2Ta2O9-DC distinguishes itself from ZnFe2Ta2O9-SC by exhibiting a higher efficiency because of its greater light absorption. Altogether, the tantalum-containing mixed metal oxide proves its efficient catalytic role in H2S decomposition and H2 production process also.

Enhancement of Dye Adsorption on TiO2 Surface through Hydroxylation Process for Dye-sensitized Solar Cells

  • Jang, Inseok;Song, Kyungho;Park, Jun-Hwan;Oh, Seong-Geun
    • Bulletin of the Korean Chemical Society
    • /
    • 제34권10호
    • /
    • pp.2883-2888
    • /
    • 2013
  • To enhance the power conversion efficiency of dye-sensitized solar cell (DSSC), the surface of titanium dioxide ($TiO_2$) photoelectrode was modified by hydroxylation treatment with $NH_4OH$ solution at $70^{\circ}C$ for 6 h. The $NH_4OH$ solutions of various concentrations were used to introduce the hydroxyl groups on $TiO_2$ surface. As the concentration of $NH_4OH$ was increased, the short-circuit current density ($J_{SC}$) value and conversion efficiency of solar cells were increased because the amount of adsorbed dye molecules on $TiO_2$ surface was increased. As a result of the surface modification to introduce hydroxyl groups, the concentration of adsorbed dye on the $TiO_2$ surface could be improved up to 32.61% without the changes of morphology, surface area and pore volume of particles. The morphology, the specific surface area, the pore volume and the chemical states of $TiO_2$ surface were characterized by using FE-SEM, $N_2$ adsorption-desorption isotherms and XPS measurements. The amount of adsorbed dye and the performance of fabricated cells were analyzed by using UV-Vis absorption spectroscopy and solar simulator.

Growth and Characteristics of Near-UV LED Structures on Wet-etched Patterned Sapphire Substrate

  • Cheong, Hung-Seob;Hong, Chang-Hee
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • 제6권3호
    • /
    • pp.199-205
    • /
    • 2006
  • Patterned sapphire substrates (PSS) were fabricated by a simple wet etching process with $SiO_2$ stripe masks and a mixed solution of $H_2SO_4$ and $H_3PO_4$. GaN layers were epitaxially grown on the PSS under the optimized 2-step growth condition of metalorganic vapor deposition. During the 1st growth step, GaN layers with triangular cross sections were grown on the selected area of the surface of the PSS, and in the 2nd growth step, the GaN layers were laterally grown and coalesced with neighboring GaN layers. The density of threading dislocations on the surface of the coalesced GaN layer was $2{\sim}4\;{\times}\;10^7\;cm^{-2}$ over the entire region. The epitaxial structure of near-UV light emitting diode (LED) was grown over the GaN layers on the PSS. The internal quantum efficiency and the extraction efficiency of the LED structure grown on the PSS were remarkably increased when compared to the conventional LED structure grown on the flat sapphire substrate. The reduction in TD density and the decrease in the number of times of total internal reflections of the light flux are mainly attributed due to high level of scattering on the PSS.

Indium-free Sn based oxide thin-film transistors using a solution process

  • 임유승;김동림;정웅희;김시준;김현재
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
    • /
    • pp.251-251
    • /
    • 2011
  • 본 연구에서는 Zr이 도핑 된 ZnSnO (ZZTO) 기반의 물질을 액상공정을 이용하여 합성하고, 박막트랜지스터를 제작하였다. 출발 물질로써 지르코늄 클로라이드 (ZrCl4), 아연 아세테이트 디하이드레이트 ($Zn(CH_3COO)_2{\cdot}2H_3O$), 틴 클로라이드 ($SnCl_2$)를 아연과 주석 프리커서의 비율을 4:7로 고정하고, 지르코늄 프리커서의 몰비를 변형시켜 제작하였다. 제작된 솔루션은 0.25몰의 몰 농도로 고정하였다. 솔벤트로는 2-메톡시에탄올 (2-methoxyethanol)을 사용하였으며, 준비된 솔루션은 $0.2{\mu}m$ 필터를 이용하여 필터링을 실시하였다. Heavily doped p+ Si 기판에 열적 산화법을 이용하여 120 nm 두께의 $SiO_2$를 성장시킨 것을 게이트 및 게이트 절연막으로 이용하였으며, 스핀코팅을 이용하여 ZZTO 박막을 코팅하였다. 코팅 된 기판은 $300^{\circ}C$에서 $500^{\circ}C$ 사이로 2시간 열처리를 실시하였으며, 마지막으로 소오스/드레인을 스퍼터링법으로 Al을 증착하였다. Zr 함량비, 열처리 온도, 제작된 솔루션의 온도에 따른 박막단계를 파악하기 위해 X-ray photoelectron spectroscopy (XPS), thermogravimetry differential thermal analyzer (TG-DTA), X-ray diffractometer (XRD), high-resolution transmission electron microscopy (HR-TEM), Hall-effect measurement, UV-Vis spectroscopy 분석을 실시하였으며, 제작된 소자는 semiconductor analyzer (HP4156C)를 이용하여 측정하였다.

  • PDF

Effect of Deposition and Annealing Temperature on Structural, Electrical and Optical Properties of Ag Doped ZnO Thin Films

  • Jeong, Eun-Kyung;Kim, In-Soo;Kim, Dae-Hyun;Choi, Se-Young
    • 한국재료학회지
    • /
    • 제18권2호
    • /
    • pp.84-91
    • /
    • 2008
  • The effects of the deposition and annealing temperature on the structural, electrical and optical properties of Ag doped ZnO (ZnO : Ag) thin films were investigated. All of the films were deposited with a 2wt% $Ag_2O-doped$ ZnO target using an e-beam evaporator. The substrate temperature varied from room temperature (RT) to $250^{\circ}C$. An undoped ZnO thin film was also fabricated at $150^{\circ}C$ as a reference. The as-grown films were annealed in temperatures ranging from 350 to $650^{\circ}C$ for 5 h in air. The Ag content in the film decreased as the deposition and the post-annealing temperature increased due to the evaporation of the Ag in the film. During the annealing process, grain growth occurred, as confirmed from XRD and SEM results. The as-grown film deposited at RT showed n-type conduction; however, the films deposited at higher temperatures showed p-type conduction. The films fabricated at $150^{\circ}C$ revealed the highest hole concentration of $3.98{\times}1019\;cm^{-3}$ and a resistivity of $0.347\;{\Omega}{\cdot}cm$. The RT PL spectra of the as-grown ZnO : Ag films exhibited very weak emission intensity compared to undoped ZnO; moreover, the emission intensities became stronger as the annealing temperature increased with two main emission bands of near band-edge UV and defect-related green luminescence exhibited. The film deposited at $150^{\circ}C$ and annealed at $350^{\circ}C$ exhibited the lowest value of $I_{vis}/I_{uv}$ of 0.05.

착화제 첨가에 따른 웨이퍼 세정 용액 특성 분석 및 금속 용해 거동 (Analysis of Wafer Cleaning Solution Characteristics and Metal Dissolution Behavior according to the Addition of Chelating Agent)

  • 김명석;류근혁;이근재
    • 한국분말재료학회지
    • /
    • 제28권1호
    • /
    • pp.25-30
    • /
    • 2021
  • The surface of silicon dummy wafers is contaminated with metallic impurities owing to the reaction with and adhesion of chemicals during the oxidation process. These metallic impurities negatively affect the device performance, reliability, and yield. To solve this problem, a wafer-cleaning process that removes metallic impurities is essential. RCA (Radio Corporation of America) cleaning is commonly used, but there are problems such as increased surface roughness and formation of metal hydroxides. Herein, we attempt to use a chelating agent (EDTA) to reduce the surface roughness, improve the stability of cleaning solutions, and prevent the re-adsorption of impurities. The bonding between the cleaning solution and metal powder is analyzed by referring to the Pourbaix diagram. The changes in the ionic conductivity, H2O2 decomposition behavior, and degree of dissolution are checked with a conductivity meter, and the changes in the absorbance and particle size before and after the reaction are confirmed by ultraviolet-visible spectroscopy (UV-vis) and dynamic light scattering (DLS) analyses. Thus, the addition of a chelating agent prevents the decomposition of H2O2 and improves the life of the silicon wafer cleaning solution, allowing it to react smoothly with metallic impurities.

균일침전시 여러 가지 금속염화물들을 첨가하여 제조된 TiO2 나노 분말들의 광산화 능력 평가 (Characterizations of Photo-Oxidative Abilities of Nanostructured TiO2 Powders Prepared with Additions of Various Metal-Chlorides during Homogeneous Precipitation)

  • 황두선;이남희;이희균;김선재
    • 한국재료학회지
    • /
    • 제14권4호
    • /
    • pp.293-299
    • /
    • 2004
  • Transition metal ions doped $TiO_2$ nanostructured powders were prepared with simply heating aqueous $TiOCl_2$ solutions, contained various metal ions (Ni, Al, Fe, Zr, and Nb) of 1.47 mol% added as metal-chlorides, at $100^{\circ}C$ for 4 hrs by homogeneous precipitation process under suppressing conditions of water vaporization. The characterizations for prepared $TiO_2$ powders were carried out to observe doping of metal ions, their concentrations and microstructures using XRD, UV-VIS (DRS), XPS, SEM, TEM and ICP. Also, photo-oxidative abilities were evaluated by decomposition of 4-chlorophenol (4CP) under ultraviolet light irradiations. No secondary oxide phases were formed in all the $VTiO_2$ powders, showing doping with various transition metal ions. When adding ions ($Ni^{2+}$ or$ Al^{3+ }$ and $Zr^{4+}$ ) having valance states or ionic radii greatly different from those of $Ti^{4+}$ , the $TiO_2$ powders of mixed anatase and rutile phases were formed, whereas in the case of additions of $^Fe{3+ }$ and $Nb^{ 5+}$ as well as no addition of metal ion the powders with pure rutile phase alone were formed. Among the prepared $TiO_2$ powders, Ni$^{2+}$ doped $TiO_2$ powders, containing a small amount of anatase phase, showed excellent photo-oxidative ability in 4CP decomposition because of relative decreases in electron-hole recombination and poisoning of $TiO_2$ surface during the photoreaction.n.

자성광촉매용 TiO2-Fe2O3 나노복합분말의 합성 (Synthesis of TiO2-Fe2O3 Nanocomposite Powders for Magnetic Photocatalyst)

  • 이창우;김순길;윤성희;이재성;좌용호
    • 한국재료학회지
    • /
    • 제15권8호
    • /
    • pp.508-513
    • /
    • 2005
  • [ $TiO_2-Fe_2O_3$ ] nanocomposite powders for magnetic photocatalyst were synthesized by sol-gel process, in which $TiO_2$ photocatalytic layer was formed on the surface of $\gamma-Fe_2O_3$ magnetic core. Transmission electron microscopy (TEM) observation and X-ray diffractometry (XRD) analysis revealed that$\gamma-Fe_2O_3$ nanoparticles, $10\~20nm$ in diameter, were coated by $TiO_2$ shell of 5nm in thickness and $TiO_2$ was anatase phase. Also hydroxyl group (-OH) used to decompose organic compounds was detected by Fourier transformation infrared spectrometry(FT-IR) analysis. UV-Visible spectrophotometry results showed that light absorption occurred in the wavelength range of $400\~700 nm$, and the band gap energy $(E_g)$ of powder was 1.8 eV. Finally it was found that the coercivity $(H({ci})$ and saturation magnetization $(M_s)$ of the powder were 79 Oe and 14.8 emu/g, respectively as experimental vibrating sample magnetometer (VSM) measurements.

DNA Repair Activity of Human rpS3 is Operative to Genotoxic Damage in Bacteria

  • JANG CHANG-YOUNG;LEE JAE YUNG;KIM JOON
    • Journal of Microbiology and Biotechnology
    • /
    • 제15권3호
    • /
    • pp.484-490
    • /
    • 2005
  • Human ribosomal protein S3 (rpS3), which has a DNA repair endonuclease activity, is a multifunctional protein. This protein is involved in DNA repair, translation, and apoptosis. In particular, rpS3 has a lyase activity, which cleaves the phosphodiester bond of damaged sites such as cyclobutane pyrimidine dimers and AP sites. Here, using deletion analysis, we identified that the repair endonuclease domain resides in the C-terminal region (165-243 aa) of rpS3. We also found that ectopic expression of GST-rpS3 in bacterial strain BL21 promoted the resistance of these cells to ultraviolet (UV) radiation and hydrogen peroxide ($H_{2}O_{2}$) treatment. The repair domain of rpS3 was sufficient to exhibit the resistance to UV irradiation and recover cell growth and viability, showing that the repair activity of rpS3 is responsible for the resistance to UV irradiation. Our study suggests that rpS3 is able to process DNA damage in bacteria via its repair domain, showing the resistance to genotoxic stress. This implies that rpS3-like activity could be operative in bacteria.

광산화 공정을 이용한 Cu-EDTA 처리 - 인공 자외선램프와 태양광의 처리경향 비교 - (Treatment of Cu-EDTA by using Photocatalytic Oxidation Process - Comparison between UV Lamp and Solar Light -)

  • 신인수;최봉종;이승목;양재규
    • 한국물환경학회지
    • /
    • 제21권1호
    • /
    • pp.66-72
    • /
    • 2005
  • Effect of the pH, molar ratio of Cu(II)/EDTA, concentration of Cu(II)-EDTA and ionic strength on the photocatalytic oxidation(PCO) of Cu(II)-EDTA in solar light was studied in this work. Experimental results in this work were compared with previous results obtained with UV-lamp. In the kinetics, Cu(II)-EDTA decomposition was favorable below neutral pH. The removal of Cu(II) and DOC was favorable as $TiO_2$ dosage increased. The initial rate for the decomplexation of Cu(II)-EDTA linearly increased as the concentration of Cu(II)-EDTA increased. The removal of Cu(II) and DOC was not much affected by variation of ionic strength with $NaClO_4$ as a background ion while much reduction was observed in the presence of background ions having higher formal charges. The removal trend of Cu(II) and DOC with variation of ionic strength and concentration of Cu(II)-EDTA in solar light was similar with that in UV light. Variation of the molar ratio of Cu(II)/EDTA showed a negligible effect on the removal of both Cu(II) and DOC. However, removal of both Cu(II) and DOC was two-times greater than that previous results obtained with UV light.