• Journal of the Korean Ceramic Society
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• v.49 no.5
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• pp.475-483
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• 2012

High capacitance X5R MLCCs based on $BaTiO_3$ ceramic dielectric layers exhibit a single broad, asymmetric arc shape impedance and modulus response over the wide frequency range between 1 MHz to 0.01 Hz. Analysis according to the conventional brick-layer model for polycrystalline conductors employing a series connection of multiple RC parallel circuits leads to parameters associated with large errors and of little physical significance. A new parametric impedance model is shown to satisfactorily describe the experimental spectra, which is a parallel network of one resistor R representing the DC conductivity thermally activated by 1.32 eV, one ideal capacitor C exactly representing bulk capacitance, and a constant phase element (CPE) Q with complex capacitance $A(i{\omega})^{{\alpha}-1}$ with ${\alpha}$ close to 2/3 and A thermally activated by 0.45 eV or ca. 1/3 of activation energy of DC conductivity. The feature strongly indicate the CK1 model by J. R. Macdonald, where the CPE with 2/3 power-law exponent represents the polarization effects originating from mobile charge carriers. The CPE term is suggested to be directly related to the trapping of the electronic charge carriers and indirectly related to the ionic defects responsible for the insulation resistance degradation.

• Journal of the Korean Ceramic Society
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• v.38 no.10
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• pp.942-947
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• 2001

Thickness dependence of orientation on piezoelectric and electrical properties was investigated by PZT (52/48) films by diol based sol-gel method. The thickness of each layer by spinning at one time was $0.2{\mu}m$ and crack-free films could be successfully deposited on 4 inches Pt/Ti/$SiO_2$/Si substrates by 0.5 mol solutions in the range from $0.2{\mu}m$ to $3.8{\mu}m$. Excellent P-E hysteresis curves were achieved, which were attributed to the well-densified PZT films and columnar grain without pores or any defects between interlayers. The (111) preferred orientation of films were shown in the range of thickness below $1{\mu}m$. As the thickness increased, the (111) preferred orientation disappeared from $1{\mu}m$ to $3{\mu}m$ region, and the orientation of films became random above $3{\mu}m$. Dielectric constants and longitudinal piezoelectric coefficient, $d_{33}$, measured by pneumatic method were saturated around the value of about 1400 and 300 pC/N respectively above the thickness of $1{\mu}m$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.9
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• pp.581-588
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• 2016

Piezoelectric thick films of a soft $Pb(Zr,Ti)O_3$ (PZT) based commercial material were produced by a conventional tape casting method. Thereafter, the interdigitated (IDT) Ag-Pd electrode pattern was printed on the $25{\mu}m$ thick piezoelectric film at room temperature. Co-firing of the 10-layer laminated piezoelectric thick films was conducted at $1,100^{\circ}C$ and $1,150^{\circ}C$ for 1 h, respectively. Piezoelectric cantilever energy harvesters were successfully fabricated using the IDT electrode pattern embedded piezoelectric laminates for 3-3 operation mode. Their energy harvesting characteristics were investigated with an excitation of 120 Hz and 1 g under various resistive loads (ranging from $10k{\Omega}$ to $200k{\Omega}$). A parabolic increase of voltage and a linear decrease of current were shown with an increase of resistive load for all the energy harvesters. In particular, a high output power of 3.64 mW at $100k{\Omega}$ was obtained from the energy harvester (sintered at $1,150^{\circ}C$).

• Korean Journal of Microbiology
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• v.36 no.3
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• pp.216-220
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• 2000

Eighty-eight strain3 o~methicillin resistant Stopllylococcus awecis were Isolated from pus (64.7%); spuhm (26.2%), blood, fluid, andurine of 83 patients at Dong-A Hospital in P~~san to invesligate theil-coagulase typ- Ing, and multi-drug resistaut ppattems. The presence of niec A gene confe~~ing melhicillin resistance was tested by polymerase chain reaction (PCR) with uwo mec A gene specific primers using purified clromosonlal DNA as templates. DNA fragments of expected size wel-e detected frorn 86 strains, but not from two strains. !i coagulase typmg, the 86 isolates were assigned to 5 coagulase lypes, I, 11, lll. 1V, VI, VII, VIlI, but there was no isolate helong lo type V. The most abundant coagulase type was type TI(50 %), lollowed by type IV Rest ofthe coagulase types were ininor; ranging fmm 4.5 to 12.5 '% Most of the type I1 ~netlucillin resistant Stapl\ulcorneryiococcus nwem (MRSA) strams were isolated from the generd sulzely ward, but major strains of type IV were Isolated from the otorhinolq~ngology of the hospital's outpatient clinic center. All of the 88 st~nins were sensitive to vancomycin and teicoplanin, but 71 (81%) strains showed multi-drug resitant to penicillin, cephalotl~n, eiythroinycin, gentan~ycin, imipenem, clindamycin, ciprofloxacin and ooxacillin. Yo relationship was found between the antibiotic resistance pattems aud the coagulase typing patterns.

• Korean Journal of Poultry Science
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• v.25 no.1
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• pp.31-37
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• 1998

Two experiment were conducted to evaluate the feeding value of probiotics for the broiler chicks. Basal diets based on corn and soybean meal with no supplemental probiotics contained 21% dietary crude protein for the first 3 weeks and 19% for the rest of two weeks. In experiment 1, 0.2 % probiotics containing 2X 10 6 cfu /ml of Saccharomyces cerevisiae(S), Clostridium butyricum(C), Lactobacillus acidophilus(L), Bacillus polyfermenticus(B) were respectively supplemented to control groups. Two hundred day-olo chicks were randomly assigned to five treatments which had four replicates of 10 chicks each per treatment. Weight gain, feed consurnption, feed conversion ratio (FCR) were weekly measured for 5 weeks. The number of intestinal microflora was examined at the end of experiment. In experiment 1, Weight gain and feed intake of chicks fed probiotics exhibited a significant response compared to those of control for the first three weeks(P<0.01). Weight gain of S or C treatments was higher than that of control for the rest of two weeks, whereas it was significantly lower in L and B treatments than S or C treatments (P<0.01). Chicks fed S or C was significantly increased weight gain(P <0.05) compared to that of control at five weeks of age. FCR of C treatment seemed to improve relative to other supplemental probiotics groups, but was not significantly different. The number of intestinal anaerobes and Lactobacillus in large intestine of chicks fed probiotics supplements was significantly decreased compared to control groups(P<0.01). In experiment 2, there were six treatments: Ti, control; T2, 0.2%S; T3, 0.2%S + 0.2%C; T4, 0.2%S + 0.2%L; T5, 0.2%S + 0.2%B; T6, 0.2%S + 0.1%C + o.i%L + 0.1%B. Control diet based on corn soybean meal contained 21% CP and 3,2OOca1 /g ME with no probiotics. There were four replicates of 10 chicks each per treatment. Weight gain of chicks fed probiotics tended to increase compared to control groups, but were not significantly different between them. FCR was also improved in probiotics treatments. However, there were no significant differences between probiotics supplementation and control groups. The results of these experiments indicated that dietary supplemental probiotics improved weight gain, feed efficiency for the first three weeks of young broiler chicks, whereas supplementation of C, L, B combined probiotics to young broiler chicks was not superior to those of single or two probiotics.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.115-115
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• 1999

GaN는 직접천이형 wide band gap(3.4eV) 반도체로서 청색/자외선 발광소자 및 고출력 전자장비등에의 응용성 때문에 폭넓게 연구되고 있다. 이러한 넓은 분야의 응용을 위해서는 열 적으로 안정된 Ohmic contact을 반드시 실현되어야 한다. n-type GaN의 경우에는 GaN계면에서의 N vacancy가 n-type carrier로 작용하기 때문에 Ti, Al, 같은 금속을 접합하여 nitride를 형성함에 의해서 낮은 접촉저항을 갖는 Ohmic contact을 하기가 쉽다. 그러나 p-type의 경우에는 일 함수가 크고 n-type와 다르게 nitride가 형성되지 않는 금속이 Ohmic contact을 할 가능성이 많다. 시료는 HF(HF:H2O=1:1)에서 10분간 초음파 세척을 한 후 깨끗한 물에 충분히 헹구었다. 그런 후에 고순도 Ar 가스로 건조시켰다. Pd와 Ni은 열적 증착법(thermal evaporation)을 사용하여 p-GaN에 상온에서 증착하였다. 현 연구에서는 열처리에 의한 Pd의 clustering을 줄이기 위해서 wetting이 좋은 Ni을 Pd 증착 전과 후에 삽입하였으며, monchromatic XPS(x-ray photoelectron spectroscopy) 와 SAM(scanning Auger microscopy)을 사용하여 열처리 전과 40$0^{\circ}C$, 52$0^{\circ}C$ 그리고 695$0^{\circ}C$에서 3분간 열처리 후의 온도에 따른 morphology 변화, 계면반응(interfacial reaction) 및 벤드 휨(band bending)을 비교 연구하였다. Nls core level peak를 사용한 band bending에서 Schottky barrier height는 Pd/Ni bi-layer 접합시 2.1eV를, Ni/Pd bi-layer의 경우에 2.01eV를 얻었으며, 이는 Pd와 Ni의 이상적인 Schottky barrier height 값 2.38eV, 2.35eV와 비교해 볼 때 매우 유사한 값임을 알 수 있다. 시료를 후열처리함에 의해 52$0^{\circ}C$까지는 barrier height는 큰 변화가 없으나, $650^{\circ}C$에서 3분 열처리 후에 0.36eV, 0.28eV 만큼 band가 더 ？을 알 수 있었다. Pd/Ni 및 Ni/Pd 접합시 $650^{\circ}C$까지 후 열 처리 과정에서 계면에서 matallic Ga은 온도에 비례하여 많은 양이 형성되어 표면으로 편석(segregation)되어지나, In-situ SAM을 이용한 depth profile을 통해서 Ni/Pd, Pd/Ni는 증착시 uniform하게 성장함을 알 수 있었으며, 후열처리 함에 의해서 점차적으로 morphology 의 변화가 일어나기 시작함을 볼 수 있었다. 이는 $650^{\circ}C$에서 열처리 한후의 ex-situ AFM을 통해서 재확인 할 수 있었다. 이상의 결과로부터 GaN에 Pd를 접합 시 심한 clustering이 형성되어 Ohoic contact에 문제가 있으나 Pd/Ni 혹은 Ni/Pd bi-layer를 사용함에 의해서 clustering의 크기를 줄일 수 있었다. Clustering의 크기는 Ni/Pd bi-layer의 경우가 작았으며, $650^{\circ}C$ 열처리 후에 barrier height는 Pd/Ni bi-layer의 경우에도 Ni의 영향을 받음을 알 수 있었다.

• Asian-Australasian Journal of Animal Sciences
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• v.30 no.7
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• pp.985-993
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• 2017

Objective: The objective of this study was to evaluate increasing doses of a novel microbial phytase (Cibenza Phytaverse, Novus International, St. Charles, MO, USA) on standardized total tract digestibility (STTD) of P in canola meal (CM), corn, corn-derived distiller's dried grains with solubles (DDGS), rice bran (RB), sorghum, soybean meal (SBM), sunflower meal (SFM), and wheat. Methods: Two cohorts of 36 pigs each (initial body weight = $78.5{\pm}3.7kg$) were randomly assigned to 2 rooms, each housing 36 pigs, and then allotted to 6 diets with 6 replicates per diet in a randomized complete block design. Test ingredient was the only dietary source of P and diets contained 6 concentrations of phytase (0, 125, 250, 500, 1,000, or 2,000 phytase units [FTU]/kg) with 0.4% of $TiO_2$ as a digestibility marker. Feeding schedule for each ingredient was 5 d acclimation, 5 d fecal collection, and 4 d washout. The STTD of P increased (linear or exponential $p{\leq}0.001$) with the inclusion of phytase for all ingredients. Results: Basal STTD of P was 37.6% for CM, 37.6% for corn, 68.6% for DDGS, 10.3% for RB, 41.2% for sorghum, 36.7% for SBM, 26.2% for SFM, and 55.1% for wheat. The efficiency of this novel phytase to hydrolyze phytate is best described with a broken-line model for corn, an exponential model for CM, RB, SBM, SFM, and wheat, and a linear model for DDGS and sorghum. Based on best-fit model the phytase dose (FTU/kg) needed for highest STTD of P (%), respectively, was 735 for 64.3% in CM, 550 for 69.4% in corn, 160 for 55.5% in SBM, 1,219 for 57.8% in SFM, and 881 for 64.0% in wheat, whereas a maximum response was not obtained for sorghum, DDGS and RB within the evaluated phytase range of 0 to 2,000 FTU/kg. These differences in the phytase concentration needed to maximize the STTD of P clearly indicate that the enzyme does not have the same hydrolysis efficiency among the evaluated ingredients. Conclusion: Variations in enzyme efficacy to release P from phytate in various feedstuffs need to be taken into consideration when determining the matrix value for phytase in a mixed diet, which likely depends on the type and inclusion concentration of ingredients used in mixed diets for pigs. The use of a fixed P matrix value across different diet types for a given phytase concentration is discouraged as it may result in inaccurate diet formulation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.236-236
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• 2008

(Bi,La)$Ti_3O_{12}$(BLT) thin film is one of the most attractive materials for ferroelectric random access memory (FRAM) applications due to its some excellent properties such as high fatigue endurance, low processing temperature, and large remanent polarization [1-2]. The authors firstly investigated and reported the damascene process of chemical mechanical polishing (CMP) for BLT thin film capacitor on behalf of plasma etching process for fabrication of FRAM [3]. CMP process could prepare the BLT capacitors with the superior process efficiency to the plasma etching process without the well-known problems such as plasma damages and sloped sidewall, which was enough to apply to the fabrication of FRAM [2]. BLT-CMP characteristics showed the typical oxide-CMP characteristics which were related in both pressure and velocity according to Preston's equation and Hernandez's power law [2-4]. Good surface roughness was also obtained for the densification of multilevel memory structure by CMP process [3]. The well prepared BLT capacitors fabricated by CMP process should have the sufficient ferroelectric properties for FRAM; therefore, in this study the electrical properties of the BLT capacitor fabricated by CMP process were analyzed with the process parameters. Especially, the effects of CMP pressure, which had mainly affected the removal rate of BLT thin films [2], on the electrical properties were investigated. In order to check the influences of the pressure in eMP process on the ferroelectric properties of BLT thin films, the electrical test of the BLT capacitors was performed. The polarization-voltage (P-V) characteristics show a decreased the remanent polarization (Pr) value when CMP process was performed with the high pressure. The shape of the hysteresis loop is close to typical loop of BLT thin films in case of the specimen after CMP process with the pressures of 4.9 kPa; however, the shape of the hysteresis loop is not saturated due to high leakage current caused by structural and/or chemical damages in case of the specimen after CMP process with the pressures of 29.4 kPa. The leakage current density obtained with positive bias is one order lower than that with negative bias in case of 29.4 kPa, which was one or two order higher than in case of 4.9 kPa. The high pressure condition was not suitable for the damascene process of BLT thin films due to the defects in electrical properties although the better efficiency of process. by higher removal rate of BLT thin films was obtained with the high pressure of 29.4 kPa in the previous study [2].

• The Journal of Korean Academy of Prosthodontics
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• v.35 no.3
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• pp.566-576
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• 1997

This study was performed to evaluate the tensile strength of solder joint in titanium and the wettability of 14K gold solder on titanium. Two pieces of titanium rod 30 mm in length and 3mm in diameter were butt-soldered with a 14K gold solder using the electric resistance heating under flux-argon atmosphere, the infrared heating under argon atmosphere, and the infrared heating under vacuum-argon atmosphere. A tensile test was performed at a crosshead speed of 0.5 mm/min, and fracture surfaces were examined by SEM. To evaluate the wettability of 14K gold solder on titanium, titanum plates of a $17{\times}17{\times}1mm$ were polished with #80-#2000 emery papers, and the spreading areas of solder 10 mg were measured by heating at 840 * for 60 seconds. The solder-matrix interface regions were etched by the solution of 10% KCN-10% (NH4)2S2O8, and analyzed by EPMA. The results obtained were summarized as follows ; 1. The maximum tensile strength was obtained when the titanium surface was polished with #2000 emery paper and soldered using the electric resistance heating under flux-argon atmosphere. Soldering strengths showed the significant difference between the electric resistance heating and the infrared heating(p<0.05). 3. The fracture surfaces showed the aspect of brittle fracture, and the failure developed along the interfaces of solder-matrix reaction zone. 4. The EPMA data for the solder-matrix interface region revealed that the diffusion of Au and Cu occurred to the titanium matrix, and the reaction zone showed the higher contents of Au, Cu and Ti than others.

• Korean Journal of Mineralogy and Petrology
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• v.35 no.4
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• pp.469-484
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• 2022

The Janggun Pb-Zn deposit has been known one of the four largest deposits (Yeonhwa, Shinyemi, Uljin) in South Korea. The geology of this deposit consists of Precambrian Weonnam formation, Yulri group, Paleozoic Jangsan formation, Dueumri formation, Janggum limestone formation, Dongsugok formation, Jaesan formation and Mesozoic Dongwhachi formation and Chungyang granite. This Pb-Zn deposit is hydrothermal replacement deposit in Paleozoic Janggum limestone formation. The wallrock alteration that is remarkably recognized with Pb-Zn mineralization at this deposit consists of mainly rhodochrositization and dolomitization with minor of pyritization, sericitization and chloritization. Wallrock alteration is divided into the five zones (Pb-Zn orebody -> rhodochrosite zone -> dolomite zone -> dolomitic limestone zone -> limestone or dolomitic marble) from orebody to wallrock. The white mica from wallrock alteration occurs as fine or medium aggregate associated with Ca-dolomite, Ferroan ankerite, sideroplesite, rutile, apatite, arsenopyrite, pyrite, sphalerite, galena, quartz, chlorite and calcite. The structural formular of white mica from wallrock alteration is (K_0.77-0.62Na_0.03-0.00Ca_0.03-0.00Ba_0.00Sr_0.01)_0.82-0.64(Al_1.72-1.48Mg_0.48-0.20Fe_0.04-0.01Mn_0.03-0.00Ti_0.01-0.00Cr_{0.00As0.01-0.00}Co_0.03-0.00Zn_0.03-0.00Pb_0.05-0.00Ni_0.01-0.00)_2.07-1.92 (Si_3.43-3.33Al_0.67-0.57)_4.00O₁₀(OH_1.94-1.80F_0.20-0.06)_2.00. It indicated that white mica from wallrock alteration has less K, Na and Ca, and more Si than theoretical dioctahedral micas. The white micas from wallrock alteration of Janggun Pb-Zn deposit, Yeonhwa 1 Pb-Zn deposit and Baekjeon Au-Ag deposit, and limestone of Gumoonso area correspond to muscovite and phengite and white mica from wallrock alteration of Dunjeon Au-Ag deposit corresponds to muscovite. Compositional variations in white mica from wallrock alteration of these deposits and limeston of Gumoonso area are caused by mainly phengitic or Tschermark substitution mechanism (Janggun Pb-Zn deposit), mainly phengitic or Tschermark substitution and partly illitic substitution mechanism (Yeonhwa 1 Pb-Zn deposit, Dunjeon Au-Ag deposit and Baekjeon Au-Ag deposit), and mainly phengitic or Tschermark substitution and partly illitic substitution or Na⁺ <-> K⁺ substitution mechanism (Gumoonso area).