• Title/Summary/Keyword: $TiO_2$ material engineering

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Solid-state reaction kinetics for the formation of aluminium titanate ($AL_2TiO_5$) from amorphous $TiO_2$ and $\alpha-AL_2O_3$ (비정질 $TiO_2$$\alpha-AL_2O_3$부터 $AL_2TiO_5$를 합성하기 위한 고체상태 반응속도)

  • Ik Jin Kim;Oh Seong Kweon;Young Shin Ko;Constantin Zografou
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.7 no.2
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    • pp.259-270
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    • 1997
  • Reaction kinetics for the solid-state reaction of $\alpha-Al_2O_3$ with amorphous $TiO_2$ to produce $Al_2TiO_5$ (Tialite) was studied in the temperature range of $1200~1300^{\circ}C$. Rate of kinetic reaction were determined by using $TiO_2$-coated $Al_2O_3$ compact containing 50 mol% $TiO_2$ and heating the reactant mixtures in MgO at definite temperature for various times. Amount of products and unreacted reactants were determined by X-ray diffractometry. Data from the volume fraction and ratio of peak intensities of $\beta-Al_2TiO_5$ indicated that the reaction of $\alpha-Al_2O_3$ with $TiO_2$ to form pseudobrookite starts between 1280 and $1300^{\circ}C$. The activation energy for solid-state reaction was determined by using the Arrhenius equation ; The activation energy was 622.4 kJ/mol.

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Photocatalytic $TiO_2$ Membrane for Water Treatment fabricated by Aerosol Deposition Method (에어로졸 증착 방법으로 제작된 수처리용 광촉매 $TiO_2$ 멤브레인)

  • Choi, Byung-Kyu;Jung, Jong-Tae;Kim, Jong-Oh;Choi, Won-Youl
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.230-231
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    • 2005
  • 본 논문은 광 활성도가 가장 좋은 아나타제(anatase) 상의 광촉매 $TiO_2$ 분말을 상온에서 aerosol deposition 법을 사용하여 박막을 제조하였다. 이런 제조 방법은 aerosol 분말을 초음속으로 분사하여 기판에 증착시키는 방법으로, 저온에서 박막 증착이 가능하여 thermal stress를 줄일 수 있고, 공정 단가를 낮출 수 있다는 장점이 있다. 박막 제조시 aerosol bath의 압력은 500 torr이고, chamber의 압력은 0.4 torr였다. 이런 압력차는 0.4mm$\times$10mm의 크기의 노즐을 통해 $TiO_2$ 나노 분말을 초음속으로 가속하여 기판에 증착시켰다. 박막 제조를 위해 사용한 기판은 수질정화에 응용하기 위해 직경 50mm인 원판 SUS 멤브레인을 사용하였다. SUS 멤브레인 위에 증착되어 있는 $TiO_2$ 박막의 입자 크기와 조성을 알아보기 위해 주사 현미경 (SEM) 및 EDX 분석을 하였고, l$\mu$m 정도의 입자 크기와 수처리 후에도 표면에 증착 되어진 anatase 상의 $TiO_2$ 박막을 확인할 수 있었다.

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Fabrication and Humidity Sensing Characteristics of $TiO_2-Co_3O_4$ Humidity Sensors ($TiO_2-Co_3O_4$ 습도센서의 제조 및 감습 특성)

  • Lee, Jung-Ho;Jung, Jae-Up;Lee, Sung-Pil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.464-467
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    • 2002
  • $TiO_{2}-Co_{3}O_{4}$ humidity sensors were fabricated by conventional ceramic process and their humid sensing characteristics were investigated. The sample which was added 10wt% $Co_{3}O_{4}$ and heat-treated $1200^{\circ}C$ showed the highest sensitivity to humidity changes and improved a linearity. As $Co_{3}O_{4}$ content was increasing, the sensor consists a uniform pore distribution and grain in the surface. This was analyzed by SEM photographs.

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Structural and optical properties of $TiO_2$ thin film fabricated by reactive sputtering (반응성 스퍼터링법에 의한 $TiO_2$ 박막의 구조적 및 광학적 특성)

  • Yang, Hyeon-Hun;Jeong, Woon-Jo;Park, Gye-Choon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.04c
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    • pp.58-61
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    • 2008
  • $TiO_2$ is a wide band-gap semiconductor (3.4 eV) and can only absorb about 5% of sun light in the ultraviolet light region, which largely limits its practical applications because of the lower utility of sun light and quantum yield. In order to move the absorption edge of $TiO_2$ fims to visible spectrum range, we have made the impurity level within a band-gap of $TiO_2$ thin film by introduction of oxygen vacancy. Oxygen-defected $TiO_2$ thin film have prepared by reactive sputtering with the partial pressure of $Ar:O_2=10:90{\sim}99.33:0.66$ ratio. As a result, we could have the impurity level of about 2.75 eV on condition that oxygen partial pressure is below 7%.

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Structural and optical properties of $TiO_2$ thin film fabricated by reactive sputtering (반응성 스퍼터링법에 의한 $TiO_2$ 박막의 구조적 및 광학적 특성)

  • Jeong, Woon-Jo;Yang, Hyeon-Hun;Park, Gye-Choon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.393-394
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    • 2008
  • $TiO_2$ is a wide band-gap semiconductor (3.4 eV) and can only absorb about 5% of sun light in the ultraviolet light region, which largely limits its practical applications because of the lower utility of sun light and quantum yield. In order to move the absorption edge of $TiO_2$ films to visible spectrum range, we have made the impurity level within a band-gap of $TiO_2$ thin film by introduction of oxygen vacancy. Oxygen-defected $TiO_2$ thin film have prepared by reactive sputtering with the partial pressure of Ar:$O_2$=10:90~99.33:0.66 ratio. As a result, we could have the impurity level of about 2.75 eV on condition that oxygen partial pressure is below 7%.

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Effect of Si3N4 Buffer Layer on Transmittance of TiO2/Si3N4/Ag/Si3N4/TiO2 Multi Layered Structure (TiO2/Si3N4/Ag/Si3N4/TiO2 다층구조에서 Si3N4 버퍼층이 투과율에 미치는 영향)

  • Lee, Seo-Hee;Jang, Gun-Eik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.1
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    • pp.44-47
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    • 2012
  • The $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ multi layered structure was designed for the possible application of transparent electrodes in PDP (Plasma Display Panel). Multi layered film was deposited on a glass substrate at room temperature by DC/RF magnetron sputtering system and EMP (Essential Macleod Program) was adopted to optimize the optical characteristics of film. During the deposition process, the Ag layer in $TiO_2/Ag/TiO_2$ became heavily oxidized and the filter characteristic was degraded easily. In thus study, Si3N4 layer was used as a diffusion buffer layer between $TiO_2$ and Ag. in order to prevent the oxidation of Ag layer in $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ structure. It was confirmed that $Si_3N_4$ layer is one of candidate materials acting as diffusin barrier between $TiO_2/Ag/TiO_2$.

A study on the Structural Properties of PZT/BT thick film (PZT/BT 세라믹 후막의 구조적 특성에 관한 연구)

  • Lee, Sang-Heon;Lim, Sung-Soo;Lee, Young-Hie
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.05b
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    • pp.57-59
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    • 2005
  • Ploycrystalline $Pb(Zr_{0.5},Ti_{0.5})O_3$ and $BaTiO_3$ powder were prepared by sol-gel process. The alumina substrate were sintered at $1400^{\circ}C$ with bottom electrode of Pt for 2 hours. The Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films with laminating times were fabricated on alumina substrate by screening printing method. The obtained thick films were sintered at $800^{\circ}C$ with upper electrode of Ag paste for 1 hour. Structural properties of Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films were investigated. As a result of the Differential Thermal Analysis(DTA) of Pb(Zr0.5,Ti0.5)O3, exothermic peak was observed at around $650^{\circ}C$. The X-ray diffraction (XRD) patterns indicated that BaTi03 and Pb(Zr0.5,Ti0.5)O3 phases and porosities were formed in the interface of Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films.

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Characterization of the Morphology and Corrosion Resistance in Electroless Ni-P-TiO2 Composite Coating Prepared by TiO2 Contents (TiO2 함량에 따르는 무전해 Ni-P-TiO2 복합도금층 특성 연구)

  • Byoun, Young-Min;Kim, Ho-Young;lee, Jae-Woong;Hwang, Hwan-il
    • Journal of the Korean institute of surface engineering
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    • v.52 no.4
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    • pp.187-193
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    • 2019
  • Electroless Ni-P coatings are widely used in the chemical, mechanical, and electronic industries because of their excellent wear and abrasion resistance. In this study, the effect of $TiO_2$ particles of composite coating was investigated. To improve the corrosion resistance, electroless $Ni-P-TiO_2$composite coating was studied by varying the $TiO_2$ content. The morphology and phase structure of $Ni-P-TiO_2$ composite coatings were analyzed by scanning electron microscopy(SEM), X-ray diffractometry(XRD) and X-ray photoelectron spectroscopy(XPS). The result showed that $Ni-P-TiO_2$composite coating is composed of Ni, P, Ti and O. It exhibits an amorphous structure, high hardness and good corrosion resistance to the substrate. $Ni-P-TiO_2$ composite coatings have higher open circuit potential than that of the substrate, which obtained at $TiO_2$ content of 5.0 g/L optimal integrated properties.

Photocatalytic Performance of Graphene-TiO2 Hybrid Nanomaterials Under Visible Light

  • Park, Jaehyeung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.32 no.2
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    • pp.161-164
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    • 2019
  • This study describes the development of graphene-$TiO_2$ conjugates for the enhancement of the photocatalytic efficiency of $TiO_2$. Graphene-based hybrid nanomaterials have attracted considerable attention because of the unique and advantageous properties of graphene. In the proposed hybrid nanomaterial, graphene serves as an electron acceptor to ensure fast charge transfer. Effective charge separation can, therefore, be achieved to slow down electron-hole recombination. This results in an enhancement of the photocatalytic activity of $TiO_2$. In addition, increased adsorption and interactions with the adsorbed reagents also lead to an improvement in the photocatalytic activity of graphene-$TiO_2$ hybrid nanomaterials. The acquired result is encouraging in that the photocatalytic activity of $TiO_2$ was initiated using visible light (630 nm) instead of the typical UV light.

Comparison of Luminescence Properties of Electrochemical Luminescence Cells for Various Electrode Materials and Structures

  • Pooyodying, Pattarapon;Ok, Jung-Woo;Sung, Youl-Moon
    • Journal of Electrical Engineering and Technology
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    • v.12 no.4
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    • pp.1605-1610
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    • 2017
  • The electrochemical luminescence (ECL) device was investigated, which has similar structure to the dye-sensitized solar cell. The structure of the ECL cell in this experiment reliably induces a large amount of the oxidation around electrodes. The band gap of the ECL electrode is of 3.0 - 3.2 eV. Titanium dioxide ($TiO_2$) nanoparticle has following properties: a band gap of 3.4 eV, a low-priced material, and 002 preferred orientation (Z-axis). Zinc Oxide (ZnO) nanorod is easy to grow in a vertical direction. In this paper, in order to determine material suitable for the ECL device, the properties of various materials for electrodes of ECL devices such as ZnO nanorod (ZnO-NR) and $TiO_2$ nanoparticle ($TiO_2-NP$) were compared. The threshold voltage of the light emission of the ZnO-NR was 2.0 V which is lower than 2.5 V of $TiO_2-NP$. In the other hand, the luminance of $TiO_2-NP$ was $44.66cd/m^2$ and was higher than that of $34cd/m^2$ of ZnO-NR at the same applied voltage of 4 V. Based on the experimental results, we could conclude that $TiO_2-NP$ is a more suitable electrode material in ECL device than the ZnO-NR.