• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.147-148
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• 2007

The compound, Ti3(Al,Si)C2, was synthesized by hot pressing a powder mixture of TiCX, Al and Si. Its oxidation at 900 and 1000 oC in air for up to 50 h resulted in the formation of rutile-TiO2, -Al2O3 and amorphous SiO2. During oxidation, Ti diffused outwards to form the outer TiO2 layer, and oxygen was transported inwards to form the inner mixed layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.268-268
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• 2012

Adsorption and desorption of toluene from bare and $TiO_2$-coated silica with a mean pore size of 15 nm was studied using breakthrough curves and temperature programmed desorption. Thicknesses of $TiO_2$ films prepared by atomic layer deposition on silica were < 2 nm, and ~ 5 nm, respectively. For toluene adsorption, both dry and humid conditions were used. $TiO_2$-thin film significantly improved toluene adsorption capacity of silica under dry condition, whereas desorption of toluene from the surface as a consequence of displacement by water vapor was more pronounced for $TiO_2$-coated samples with respect to the result of bare ones. In the TPD experiments, silica with a thinner $TiO_2$ film (thickness < 2 nm) showed the highest reactivity for toluene oxidation to $CO_2$ in the absence and presence of water. We show that the toluene adsorption and oxidation reactivity of silica can be controlled by varying thickness of $TiO_2$ thin films.

• Journal of the Semiconductor & Display Technology
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• v.18 no.1
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• pp.32-37
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• 2019

Titanium dioxide ($TiO_2$) is a promising dielectric material in the semiconductor industry for its high dielectric constant. However, for utilization on Si substrate, $TiO_2$ film meets with a difficulty due to the large leakage currents caused by its small conduction band energy offset from Si substrate. In this study, we propose an in-situ plasma oxidation process in plasma-enhanced atomic layer deposition (PE-ALD) system to form an oxide barrier layer which can reduce the leakage currents from Si substrate to $TiO_2$ film. $TiO_2$ film depositions were followed by the plasma oxidation process using tetrakis(dimethylamino)titanium (TDMAT) as a Ti precursor. In our result, $SiO_2$ layer was successfully introduced by the plasma oxidation process and was used as a barrier layer between the Si substrate and $TiO_2$ film. Metal-oxide-semiconductor ($TiN/TiO_2/P-type$ Si substrate) capacitor with plasma oxidation barrier layer showed improved C-V and I-V characteristics compared to that without the plasma oxidation barrier layer.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.12
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• pp.2425-2430
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• 2009

Dye-sensitized solar cell(DSC) is composed of a dye-adsorbed nanoporous $TiO_2$ layer on fluorine-doped tin oxide(FTO) glass substrate, electrolyte, and platinium doped counter electrode. Among these, a dye-absorbed nanoporous $TiO_2$ layer plays an important role in the performance of the DSC because the injected electrons from excited dye molecules move through this layer. And the condition of $TiO_2$ layer such as the morphology and thickness affects on the electron movement. Therefore, the performances and the efficiency of DSC change as the thickness of $TiO_2$ layer is different. Electrochemical Impedance Spectroscopy(EIS) is the powerful analysis method to study the kinetics of electrochemical and photoelectrochemical processes occurring in the DSC especially the injected electron movements. So we analyzed the DSCs with different $TiO_2$ thicknesses by using EIS to understand the influence of the $TiO_2$ thickness to the performance of the DSC clearly. Finally, we got the EIS analysis on the DSC with different $TiO_2$ thickness from the internal resistance of the DSC, the electron life time and the amount of dye molecules.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.75-75
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• 2011

Recently, dye-sensitized solar cell (DSSC) attracts great attention as a promising alternative to conventional silicon solar cells. One of the key components for the DSSC would be the nanocrystalline TiO2 electrode, and the control of interface between TiO2 and TCO is a highly important issue in improving the photovoltaic conversion efficiency. In this work, we applied various interfacial layers, and analyzed their effect in enhancing photovoltaic properties. In overall, introduction of interfacial layers increased both the Voc and Jsc, since the back-reaction of electrons from TCO to electrolyte could be blocked. First, several metal oxides with different band gaps and positions were employed as interfacial layer. SnO2, TiO2, and ZrO2 nanoparticles in the size of 3-5 nm have been synthesized. Among them, the interfacial layer of SnO2, which has lower flat-band potential than that of TiO2, exhibited the best performance in increasing the photovoltaic efficiency of DSSC. Second, long-range ordered cubic mesoporous TiO2 films, prepared by using triblock copolymer-templated sol-gel method via evaporation-induced self-assembly (EISA) process, were utilized as an interfacial layer. Mesoporous TiO2 films seem to be one of the best interfacial layers, due to their additional effect, improving the adhesion to TCO and showing an anti-reflective effect. Third, we handled the issues related to the optimum thickness of interfacial layers. It was also found that in fabricating DSSC at low temperature, the role of interfacial layer turned out to be a lot more important. The self-assembled interfacial layer fabricated at room temperature leads to the efficient transport of photo-injected electrons from TiO2 to TCO, as well as blocking the back-reaction from TCO to I3-. As a result, fill factor (FF) was remarkably increased, as well as increase in Voc and Jsc.

• Korean Journal of Materials Research
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• v.12 no.5
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• pp.334-340
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• 2002

$TiO_2$-coated fly ash was synthesized by dropping method of coating agent in order to get $TiO_2$ coating layer with high photocatalytic activity on the surface of coal fly ash. The properties of the $TiO_2$ coating layer such as morphology, crystal structure, crystal size and photocatalytic activity were compared with those of the $TiO_2$-coated fly ash prepared by the traditional method of precipitation. $TiCl_4$ aqueous solution was used as a titanium stock solution and $NH_4HCO_3$ was used as a precipitant. The $TiO_2$ coating layer obtained by dropping method of coating agent was more uniform than that coated by precipitation. However, the crystal of $TiO_2$ coated by dropping method of coating agent was easy to grow by heat treatment because of the small primary particle size and bulky morphology, and its photocatalytic activity was consequently lower than that of the $TiO_2$ coated by precipitation. The $TiO_2$ coating layer obtained by both methods had a crystal structure of anatase, and the temperature of phase transformation into rutile was 90$0^{\circ}C$. The minimum crystal size of $TiO_2$ for the highest photocatalytic activity was found to be about 10nm.

• Journal of the Korean institute of surface engineering
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• v.33 no.4
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• pp.281-288
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• 2000

To understand the effect of Fe on the oxidation behavior of TiAl alloys, TiAl-(2, 4, 6at% )Fe were oxidized at 800 and 90$0^{\circ}C$ in air. The oxidation resistance of TiAl-Fe alloys increased with increasing an iron content. The scales formed consisted of an outer $TiO_2$ layer, an intermediate $A1_2$$O_3$ layer, and an inner mixed ($TiO_2$+$A1_2$$O_3$) layer, being similar to other common TiAl alloys. But, the scales formed on TiAl-Fe alloys were generally thin compared to those formed on pure TiAl, and contained dissolved iron. Below the oxide scale, an oxygen affected zone was formed. This beneficial effects of Fe on increasing the oxidation resistance and scale adherence of TiAl alloys were attributed to the refinement of oxide grains, increased scale adherence and the enhanced alumina-forming tendency.

• Journal of the Korean Ceramic Society
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• v.40 no.2
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• pp.198-205
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• 2003

$Ba_{0.66}Sr_{0.34}TiO_3$ thin films and seed-layers were deposited on $Pt/Ti/SiO_2/Si$substrate by R.F. magnetron sputtering method. Effects of various substrate temperature conditions on electrical properties (such as capacitance and leakage current) of BST thin films were studied. The effect of seed-layer was also studied. When seed-layer was inserted between BST and Pt, the crystallization of the BST thin films was considerably improved and the processing temperature was lowered. Compared to the pure BST thin films, dielectric constant, dielectric loss, and leakage current of BST thin films deposited on the seed-layer were considerably improved. It could be revealed that electrical properties are influenced by the substrate temperatures of BST thin films and are enhanced by the seed-layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.440-444
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• 2016

Titanium oxide ($TiO_2$) thin films were synthesized on polymer insulator and Si substrates by atomic layer deposition (ALD) method. The surface and electrical properties of $TiO_2$ films synthesized at various ALD cycle numbers were investigated. The synthesized $TiO_2$ films exhibited higher contact angle and smooth surface. The contact angle of $TiO_2$ films was increased with the increase of ALD-cycle number. Also, the rms surface roughness of films was slightly rough with the increase of ALD-cycle number. The leakage current on $TiO_2$ film surface synthesized at various conditions were uniformed, and the values were decreased with the increase of ALD-cycle number. In the results, the performance of $TiO_2$ films for self-cleaning critically depended on a number of ALD-cycle.

• ETRI Journal
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• v.31 no.6
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• pp.675-679
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• 2009

$Ti_xSi_{1-x}O_y$ (TSO) thin films are fabricated using plasma-enhanced atomic layer deposition. The Ti content in the TSO films is controlled by adjusting the sub-cycle ratio of $TiO_2$ and $SiO_2$. The refractive indices of $SiO_2$ and $TiO_2$ are 1.4 and 2.4, respectively. Hence, tailoring of the refractivity indices from 1.4 to 2.4 is feasible. The controllability of the refractive index and film thickness enables application of an antireflection coating layer to TSO films for use as a thin film solar cell. The TSO coating layer on an Si wafer dramatically reduces reflectivity compared to a bare Si wafer. In the measurement of the current-voltage characteristics, a nonlinear coefficient of 13.6 is obtained in the TSO films.