• Title/Summary/Keyword: $TiO_{2-x}$

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Oxidation characterization of VOCs(volatile organic compounds) over pt and ir supported catalysts (Pt와 Ir을 담지한 촉매에 의한 휘발성유기화합물들의 산화특성)

  • Kim, Moon-Chan;Yoo, Myong-Suk
    • Analytical Science and Technology
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    • v.18 no.2
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    • pp.130-138
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    • 2005
  • Volatile organic compounds (VOCs) have been recognized as major contributor to air pollution. Catalytic oxidation in VOCs can give high efficiency at low temperature. In this study, monometallic Pt, Ir and bimetallic Pt-Ir were supported to $TiO_2$. Xylene, toluene and methyl ethyl ketone (MEK) were used as reactants. The monometallic or bimetallic catalysts were prepared by the excess wetness impregnation method and characterized by XRD, XPS and TEM analysis. Result reveal that Pt catalyst has higher conversion than Ir catalyst and Pt-Ir bimetallic catalysts. The existence of multipoint actives in, Pt-Ir bimetallic catalysts gives improved performance for the Pt metalstate. Bimetallic catalysts have higher conversion for VOCs than monometallic ones. The addition, VOCs oxidation follows first order kinetics. The addition of small amount of Ir to Pt promotes oxidation conversion of VOCs.

저온 공정 온도에서 $Al_2O_3$ 게이트 절연물질을 사용한 InGaZnO thin film transistors

  • 우창호;안철현;김영이;조형균
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.11-11
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    • 2010
  • Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.

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Effects of Pretreatment of Alkali-degreasing Solution for Cu Seed Layer (약알칼리탈지 용액에서의 구리 Seed 층의 전처리 효과)

  • Lee, Youn-Seoung;Kim, Sung-Soo;Rha, Sa-Kyun
    • Journal of the Korean Vacuum Society
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    • v.21 no.1
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    • pp.6-11
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    • 2012
  • In order to understand a process of contaminants removal on surface of Cu seed layer (Cu seed/Ti/Si) by sputter deposition, we investigated the changed morphology and states of Cu seed surface after pretreatment in alkali degreasing Metex TS-40A solution according to dipping time. After TS-40A pretreatment, the surface morphology with clearer grains was observed by Field emission scanning electron microscope and the changed surface chemical states and impurities on surface of samples were checked by X-ray photoelectron spectroscopy. Dipping time in TS-40A solution had very little effect on surface of Cu seed layer. After pretreatment, much carbons and little oxygens on surface of Cu seed were eliminated and the decrease of peaks corresponded to O=C and $Cu(OH)_2$ was estimated. However, Si content (=silicate) was detected on sample surface. We think that the silicate impurity forms on Cu seed by chemical reaction of TS-40A solution included silicate component. By pretreatment of alkali degreasing Metex TS-40A solution, it showed an excellent effect in removal of O=C and $Cu(OH)_2$ on Cu seed layer, but the silicate was formed on surface of Cu seed. Therefore, another cleaning process such as acid cleaning is required for removal of this silicate in use of this alkali degreasing.

Variation of Electrical Properties by E-field Induced Phase Transition in PZN-PT Crystals (전계유기 상전이에 의한 PZN-PT 단결정의 전기적 특성변화)

  • 백동수;김영호;조봉희
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.11
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    • pp.892-897
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    • 2001
  • Variations of dielectric and piezoelectric properties and associated phase transformation of <001> -oriented rhombohedral 0.92Pb (Zn$\sub$1/3/Nb$\sub$2/3/)O$_3$-0.08PbTiO$_3$ single crystals were investigated. The longitudinal strain level was found to abruptly increase at 15 kV/cm, corresponding to that where an induced phase appears within a multidomain matrix. Drastic decreases in the dielectric constant, transverse coupling, and transverse piezoelectric coefficient associated with the E-field induced phase were the result of increased crystal anisotropy in PZN-PT crystals. By contrast, the thickness coupling increased from 53 % at 0 kV/cm to 64 % at 45 kV/cm, also associated with this phase transition under the E-field. The measured dielectric and piezflelectric properties found for the induced phase state were nearly identical to those of <001> poled tetragonal (1-x)PZN-xPT (x>0.1) crystals. Based on these results, it is evident that the symmetry of induced phase is tetragonal.

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Effect of Inorganic Nanocomposite Based Liners on Deodorization of Kimchi

  • Chung, Kwon;Park, Hyun Jin;Shin, Yang Jai
    • KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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    • v.27 no.2
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    • pp.55-62
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    • 2021
  • This study aims to reduce the rancid odor generated during the fermentation process of kimchi by inserting zinc oxide (ZnO) into an inorganic porous material with a high surface area to decompose or adsorb the fermentation odor. ZnO activated by the presence of moisture exhibits decomposition of rancid odors. Mixed with Titanium dioxide (TiO2), a photocatalyst. To manufacture the packaging liner used in this study, NaOH, ZnCl2, and TiO2 powder were placed in a tank with diatomite and water. The sludge obtained via a hydrothermal ultrasonication synthesis was sintered in an oven. After being pin-milled and melt-blended, the powders were mixed with linear low-density polyethylene (L-LDPE) to make a masterbatch (M/B), which was further used to manufacture liners. A gas detector (GasTiger 2000) was used to investigate the total amount of sulfur compounds during fermentation and determine the reduction rate of the odor-causing compounds. The packaging liner cross-section and surface were investigated using a scanning electron microscope-energy dispersive X-ray spectrometer (SEM-EDS) to observe the adsorption of sulfur compounds. A variety of sulfur compounds associated with the perceived unpleasant odor of kimchi were analyzed using gas chromatography-mass spectrometry (GC-MS). For the analyses, kimchi was homogenized at room temperature and divided into several sample dishes. The performance of the liner was evaluated by comparing the total area of the GC-MS signals of major off-flavor sulfur compounds during the five days of fermentation at 20℃. As a result, Nano-grade inorganic compound liners reduced the sulfur content by 67 % on average, compared to ordinary polyethylene (PE) foam liners. Afterwards SEM-EDS was used to analyze the sulfur content adsorbed by the liners. The findings of this study strongly suggest that decomposition and adsorption of the odor-generating compounds occur more effectively in the newly-developed inorganic nanocomposite liners.

High Temperature Desulfurization over ZnO-Fe2O3 Mixed Metal Oxide Sorbent (ZnO-Fe2O3 복합금속 산화물을 이용한 고온에서의 황화수소 제거에 관한 연구)

  • Lee, Jae-Bok;Lee, Young-Soo;Yoo, Kyong-Ok
    • Journal of Environmental Health Sciences
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    • v.20 no.1
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    • pp.62-67
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    • 1994
  • Introduction : Recently, water and environmental pollution becomes serious social problem and high technology makes this pollution accelerate. Hydrogen sulfide, the main subject of our research, is one of the most dangerous air pollutant like SO$_x$ and NO$_x$. The major contaminant in coal gasification is H$_2$S, which is very toxic, hazardous and extremely corrosive. Therefore, control of hydrogen sulfide to a safe level is essential. Although commercial desulfurization process called liquid scrubbing is effective for removal of H$_2$S, it has drawbacks, the loss of sensible heat of the gas and costly wastewater treatment. Many investigations are carried out about high-temperature removal ol H$_2$S in hot coal-derived gas using metal oxide or mixed metal qxide sorbents. It was reported that ZnO was very effective sorbent for H2S removal, but it has big flaw to vaporize elemental zinc above 600\ulcorner \ulcorner As alternative, metal oxides such as CaO, $Fe_2O_3$, TiO$_2$ and CuO were added to ZnO. Especially, different results are reported for $Fe_2O_3$ additive. Tamhankar et al. reported SiO$_2$ with 45 wt% $Fe_2O_3$ sorbent is favorable for removal of H$_2$S and regeneration.

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Characteristics of PAN-PZI Ceramics with $BaCO_3$Addition ($BaCO_3$ 첨가량에 따른 PAN-PZT계 세라믹스의 특성)

  • 박타리;이동균;최지원;김현재;윤석진;조봉희;고태국
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.981-984
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    • 2001
  • The piezoelectric properties of 0.05pb(A $l_{0.5}$N $b_{0.5}$) $O_3$-0.95Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_3$+0.7wt%N $b_2$ $O_{5}$ +0.5wt%Mn $O_2$ceramics with the additives of BaC $O_3$were investigated. For the additions of BaC $O_3$, the dielectric constant ($\varepsilon$$^{T}$ $_{33}$ ), the piezoelectric constant ( $d_{33}$ ), the electromechanical coupling factor ( $k_{p}$ ), and . the mechanical quality factor ( $Q_{m}$ ) were increased, but dielectric loss (tan$\delta$) was decreased. The highest piezoelectric properties and dielectric properties were observed at the sintered temperature of 120$0^{\circ}C$ and 0.4 wt% of BaC $O_3$, and the properties of $d_{33}$ , $k_{p}$ , and $Q_{m}$ were 339(x10$^{-12}$ C/N), 59% and 1754, respectively.vely.y.y.

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Enhanced NH3-SCR Activity of V/TiO2 Catalyst Prepared by Various Ball Mill Method (다양한 Ball Mill Method에 의해 제조된 V/TiO2 촉매의 NH3-SCR 활성 증진연구)

  • Kim, Dong Ho;Seo, Phill Won;Hong, Sung Chang
    • Clean Technology
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    • v.23 no.1
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    • pp.64-72
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    • 2017
  • In this study, the selective catalytic reduction (SCR) for NOx removal was investigated in the temperature range of $150{\sim}400^{\circ}C$. XRD, BET and XPS analyses to determine the structural properties and valence state characteristics of the catalyst were performed. Various ball mill method were shown to a difference in activity at a low temperature below $250^{\circ}C$. Based on the catalyst with the highest denitrification efficiency, the ball mill time was the best result at 3 h. As a result of XPS analysis, the presence of the non-stoichiometric vanadium species and the increase of the number of atoms were attributed to a positive effect in the SCR reaction. it was confirmed that the correlation between the amount of lattice oxygen and the denitrification efficiency through the $O_2$ on-off experiment, and it was in a proportional relationship to each other.

Electromechanical Properties of PMN-PT-PZ Composition for High Power Device (고출력 압전소자를 위한 압전 세라믹(PMN-PT-PZ)조성의 전기기계적 특성)

  • Lee, K.W.;Hong, J.K.;Jeong, S.H.;Lee, J.S.;Park, C.H.;Lim, K.J.
    • Proceedings of the KIEE Conference
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    • 1999.07d
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    • pp.1723-1725
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    • 1999
  • This paper is the study for piezoelectric properties of PMN-PT-PZ composition for high power piezoelectric device. It needs the properties such as high mechanical quality factor(Qm), high electromechanical coupling coefficient(kp) and high dielectric strain constant$(d_31)$, and the stable electromechanical properties under high vibration level. For acquiring this results, the value of x is changed in 0.1Pb$(Mn_{1/3}Nb_{2/3})O_3$+(0.9-x)$PbZrO_3+xPbTiO_3$ composition to find MPB(morphotropic phase boundary), and the piezoelectric constants is measured by resonance-antiresonance frequency method, based on IRE Standard. Also, it is measured as a function of the amount of additive, $Nb_2O_5$. When the composition is applied to high power device, the electromechanical properties is measured by laser vibrometer to confirm the reliablity under high vibration level. From these results, PMN-PT-PZ composition is shown excellent properties and capacity of application to high power device.

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A Study of Photoelectrolysis of Water by Use of Titanium Oxide Films (산화티타늄피막의 광 전기분해 특성에 대한 연구)

  • Park, Seong-Yong;Cho, Won-Il;Cho, Byung-Won;Lee, Eung-Cho;Yun, Kyung-Suk
    • Journal of Hydrogen and New Energy
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    • v.2 no.1
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    • pp.47-56
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    • 1990
  • Pure titanium rods were oxidized by anodic oxidation, furnace oxidation and flame oxidation and used as a electrode in the photodecomposition of water. The maximum photoelectrochemical conversion efficiency(${\eta}$) was found for flame oxidized electrode ($1200^{\circ}C$ for 2 min in air), 0.8 %. Anodically oxidized electrodes have minimum photoelectrochemical conversion efficiencies, 0.3 %. Furnace oxidized electrode ($800^{\circ}C$ for 10min in air) has 0.5% phtoelectrochemical efficiency and shows a band-gap energy of about 2.9eV. The efficiency shows a parallelism with the presence of the metallic interstitial compound $TiO_{O+X}$(X < 0.33) at the metal-semiconductor interface, the thickness of the sub oxide layer and that of the external rutile scale.

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