• Journal of Powder Materials
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• 제15권6호
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• pp.503-508
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• 2008

Ti(C,N) solid solutions in hot-pressed Ti($C_{x}N_{1-x}$) (x=0.0, 0.3, 0.5, 0.7, 1.0) and 40TiC-40TiN-20Ni (in wt.%) cermet were characterized in this study. For hot-pressed Ti(C,N)s, the lattice parameters and hardness values of Ti(C,N) were determined by using XRD (X-Ray Diffraction) and nanoindentation. The properties of hot-pressed Ti(C,N) samples changed linearly with their carbon or nitrogen contents. For the TiC-TiN-Ni cermet, the hardness of the hard phase and binder phase were determined by nanoindentation in conjunction with microstructural observation. The measured hardness values were ${\sim}8.7$ GPa for the binder phase and ${\sim}28.7$ GPa for the hard phase, which was close to the hardness of hot-pressed Ti($C_{0.7}N_{0.3}$).

• Journal of Korean Ophthalmic Optics Society
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• 제6권2호
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• pp.31-35
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• 2001

The anti-reflective anti-static(ARAS) optical film Was designed using conducting layer $TiN_x$ by Essential Macleod program. From this results, [air ${TiN_x{\mid}SiO_2{\mid}$ glass] two layer shows wide-band AR coating in the wavelength range of 450~700 nm. The $TiN_x$ thin films were prepared on the glass substrate by RF(radio-freqency) magnetron sputtering apparatus from a Ti target in agaseous mixture of argon and nitrogen with the thickness of 7~10 nm. For the films obtained, the chemical binding energy of the films was investigated by x-ray photoelectron spectroscopy(XPS) in order to analyze the chemical nature and composition of the films. In addition, we investigated the relationship between the surface resistance and the chemical nature the sheet resistance and XPS depth profiling the chemical binding of the films.

• Journal of the Korean institute of surface engineering
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• 제52권2호
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• pp.53-57
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• 2019

Stability and activity of boron doped diamond (BDD) electrode are key factors for water treatment. In this study, BDD electrodes were prepared on various substrates such as Nb, Si, Ti, and $TiN_x/Ti$ by hot filament chemical vapor deposition (HFCVD) method. BDD/Ti film showed the delamination between BDD and Ti substrate due to the formation of TiC layer caused by diffusion of carbon. On the other hand, $BDD/TiN_x/Ti$ showed remarkably improved stability, compared to BDD/Ti. It was confirmed that $TiN_x$ intermediate layer act as barrier layer for diffusion of carbon. High potential window of 2.8 eV was maintained on the $BDD/TiN_x/Ti$ electrode and, better wastewater treatment capability and longer electrode working life than BDD/Nb, BDD/Si and BDD/Ti were obtained.

• Journal of Environmental Science International
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• 제17권8호
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• pp.933-941
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• 2008

The formation of $Co_nTiO_{n+2}$ compounds, i.e., $CoTiO_3$ and $CO_2TiO_4$, in a 5wt% $CoO_x/TiO_2$ catalyst after calcination at different temperatures has been characterized via scanning electron microscopy (SEM), Raman and X-ray photoelectron spectroscopy (XPS) measurements to verify our earlier model associated with $CO_3O_4$ nanoparticles present in the catalyst, and laboratory-synthesized $Co_nTiO_{n+2}$ chemicals have been employed to directly measure their activity profiles for CO oxidation at $100^{\circ}C$. SEM measurements with the synthetic $CoTiO_3$ and $CO_2TiO_4$ gave the respective tetragonal and rhombohedral morphology structures, in good agreement with the earlier XRD results. Weak Raman peaks at 239, 267 and 336 $cm^{-1}$ appeared on 5wt% $CoO_x/TiO_2$ after calcination at $570^{\circ}C$ but not on the catalyst calcined at $450^{\circ}C$, and these peaks were observed for the $Co_nTiO_{n+2}$ compounds, particularly $CoTiO_3$. All samples of the two cobalt titanate possessed O ls XPS spectra comprised of strong peaks at $530.0{\pm}0.1$ eV with a shoulder at a 532.2-eV binding energy. The O ls structure at binding energies near 530.0 eV was shown for a sample of 5 wt% $CoO_x/TiO_2$, irrespective to calcination temperature. The noticeable difference between the catalyst calcined at 450 and $570^{\circ}C$ is the 532.2 eV shoulder which was indicative of the formation of the $Co_nTiO_{n+2}$ compounds in the catalyst. No long-life activity maintenance of the synthetic $Co_nTiO_{n+2}$ compounds for CO oxidation at $100^{\circ}C$ was a good vehicle to strongly sup port the reason why the supported $CoO_x$ catalyst after calcination at $570^{\circ}C$ had been practically inactive for the oxidation reaction in our previous study; consequently, the earlier proposed model for the $CO_3O_4$ nanoparticles existing with the catalyst following calcination at different temperatures is very consistent with the characterization results and activity measurements with the cobalt titanates.

• Journal of Powder Materials
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• 제17권2호
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• pp.123-129
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• 2010

The fabrication of interconnect from titanium powders and $TiN_x$ powders is investigated. Corrosion-resistant titanium and $TiN_x$ are used as reinforcement in order to reveal high heat and corrosion resistance at the elevated temperature. We fabricated the plates for interconnect reinforced with $TiN_x$ by mixing titanium powders with 10 wt.% of nano-sized $TiN_x$. Spark Plasma Sintering (SPS) was chosen for the sintering of these composites. The plate made of titanium powders and $TiN_x$ powders demonstrates higher corrosion resistance than that of the plate of titanium powders alone. The physical properties of specimens were analyzed by performing hardness test and biaxial strength test. The electrochemical properties, such as corrosion resistance and hydrogen permeability at high temperature, were also investigated. The microstructures of the specimens were investigated by FESEM and profiles of chemical compositions were analyzed by EDX.

• Journal of the Korean Ceramic Society
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• 제31권9호
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• pp.995-1004
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• 1994

Phase relation and microwave dielectric properties of the system BaO.(Nd1-xSmx)2O3.TiO2 (n=4, 5) were studied. With n=5 (1 : 1 : 5), Ba2Ti9O20 and TiO2 formed in case of X$\leq$0.7, and Ba2Ti9O20 and Sm2Ti2O7 formed at X=1.0 as the second phases dispersed in fine-grained orthorhombic matrix phase. With n=4 (1 : 1 : 4). on the contrary, only fine grains of an ortho-rhombic phase were observed irrespective of Nd/Sm ratio. The compositions of these two stable orthorombic phases having distinct lattic constants even with the same Nd/Sm ratio were estimated as 4BaO.5(Nd1-xSmx)2O3.18TiO2 and BaO.(Nd1-xSmx)2O3.4TiO2 with n=5 and n=4 in the system BaO.(Nd1-xSmx)2O3.TiO2, respectively. Consequently the composition BaO.(Nd1-xSmx)2O3.5TiO2 lies in the compatible triangle of 4BaO.5(Nd1-xSmx)2O3.18TiO2 and the second phases mentioned above. The microwave dielectric properties (~4 GHz) of BaO.(Nd1-xSmx)2O3.5TiO2 can be controlled effectively by adjusting Sm content : with increasing X from 0 to 0.7, both dielectric constant and the temperature coefficient of resonant frequency decreased monotonically from 82 to 65 and from 91 (ppm/$^{\circ}C$) to -19(ppm/$^{\circ}C$), respectively, while unloaded Q(Qo) remained constant at about 2,600.

• The Transactions of the Korean Institute of Electrical Engineers
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• 제41권8호
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• pp.869-874
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• 1992

The physical and electrical properties of TiN/TiSiS12T bilayer were studied. The TiN/TiSiS12T bilayer was formed by rapid thermal anneal in NHS13T ambient after the Ti film was deposited on silicon substrate. The Ti film reacts with NHS13T gas to make a TiN layer at the surface and reacts with silicon to make a TiSiS12T layer at the interface respectively. It was found that the formation of TiN/TiSiS12T bilayer depends on RTA temperature. In this experiment, competitive reaction for TiN/TiSiS12T bilayer occured above $600^{\circ}C$. Ti-rich TiNS1xT layer and Ti-rich TiSiS1xT layer and Ti-rich TiSiS1xT layer were formed at $600^{\circ}C$. stable structure TiN layer TiSiS12T layer which has CS149T phase and CS154T phase were formed at $700^{\circ}C$. Both stable TiN layer and CS154T phase TiSiS12T layer were formed at 80$0^{\circ}C$. The thickness of TiN/TiSiS12T bilayer was increased as the thickness of deposited Ti film increased.

• The Transactions of the Korean Institute of Electrical Engineers
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• 제41권6호
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• pp.633-639
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• 1992

The physical and electrical properties of TiN/TiSiS12T contact barrier were studied. The TiN/TiSiS12T system was formed by rapid thermal anneal in NS12T ambient after the Ti film was deposited on silicon substrate. The Ti film reacts with NS12T gas to make a TiN layer at the surface and reacts with silicon to make a TiSiS12T layer at the interface respectively. It was found that the formation of TiN/TiSiS12T system depends on RTA temperature. In this experiment, competitive reaction for TiN/TiSiS12T system occured above $600^{\circ}C$. Ti-rich TiNS1xT layer and Ti-rich TiSiS1xT layer were formed at $600^{\circ}C$. stable structure TiN layer and TiSiS1xT layer which has CS149T phase and CS154T phase were formed at $700^{\circ}C$. Both stable TiN layer and CS154T phase TiSiS12T layer were formed at 80$0^{\circ}C$. The thickness of TiN/TiSiS12T system was increased as the thickness of deposited Ti film increased.

• Journal of the Korean Magnetics Society
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• 제2권2호
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• pp.114-118
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• 1992

아크로를 이용하여 제작한 NdF $e_{12-x}$ $Ti_{x}$ (1 .leq. x .leq. 2) 합금의 상분석 결과 이들 합금은 ThM $n_{12}$ 구조의 경자성상(1-12상) 과 반강자성의 F $e_{2}$Ti 및 연자성의 .alpha. -Fe 등으로 구성되며, x=1.3 인 NdF $e_{10.7}$ $Ti_{1.3}$ 조성에서 단상에 가까운 ThM $n_{2}$ 구조가 얻어짐이 밝혀졌다. 한편, 합금중의 1-12 상은 50 .mu. m - 100 .mu. m 의 사각주 형태로 생성되며, FeTi은 1-12상의 결정립계에 고립된 입자의 형태로 존재한다. NdF $e_{10.7}$ $Ti_{1.3}$ 합금을 질화처리할 경우 단위포의 체적, 자화, 이방성자장 및 큐리온도가 증가하며, 이합금을 500 .deg. C 에서 15분간 질화처리한 NdF $e_{10.7}$ $Ti_{1.3}$ $N_{x}$ 의 비포화자화, 이방성자장 및 큐리온 도는 각각, .sigma. $_{s}$ =128 A $m^{2}$/kg $H_{A}$=6400 kA/m (80 kOe) 및 Tc=470 .deg. C로 질화처리 전에 비하여 크게 증가한다.크게 증가한다. 증가한다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제15권3호
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• pp.104-107
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• 2005

[ $TiN_x$ ] powder have been fabrication by making of reaction between titanium powder and $Si_3N_4$ bowl during a planetary milling. Milling times were maintained for 1 hour, 5 hours, and 10 hours, respectively. The XRD result showed existence of non-stoichiometric compound of $TiN_{0.26}$ after 5 hours milling and coexistence of TiN with $TiN_{0.26}$ after 10 hours milling. Particle size distribution was investigated by particle size analyzer and microstructure was analyzed by FE-SEM. The size of titanium was decreased with increasing the milling time and the mean size of $TiN_x$ after 10 hours milling was increased by 200 nm.