• Journal of the Korean Ceramic Society
• /
• v.32 no.7
• /
• pp.809-816
• /
• 1995

Ti1-xAlxN films were successfully deposited on high speed steel and silicon wafer by plasma-assisted chemical vapor deposition using a TiCl4/AlCl3/N2/Ar/H2 gas mixture. Plasma process enabled N2 gas to nitride AlCl3, which is not possible in sense of thermodynamics. XPS analyses revealed that the deposited layer contained Al-N bond as well as Ti-N bond. Ti1-xAlxN films were polycrystalline and had single phase, B1-NaCl structure of TiN. Interplanar distance, d200, of (200) crystal plane of Ti1-xAlxN was, however, decreased with Al content, x. Al incorporation into TiN caused the grain size to be finer and changed strong (200) preferred orientation of TiN to random oriented microstructure. Those microstructural changes with Al addition resulted in the increase of micro-hardness of Ti1-xAlxN film up to 2800Kg/$\textrm{mm}^2$ compared with 1400Kg/$\textrm{mm}^2$ of TiN.

• Journal of the Korean Chemical Society
• /
• v.54 no.1
• /
• pp.120-124
• /
• 2010

$TiO_2$ and N-substituted $TiO_{2-x}N_x$ were synthesized by using precipitation method. $TiO_{2-x}N_x$ compound absorbed whole UV light as well as long wavelength of visible light (400 - 700 nm) because of the change of band gap from 3.2 eV to 1.77 eV. Results obtained revealed that $TiO_{2-x}N_x$ showed higher activity than pure $TiO_2$ or P-25 for visible-photocatalytic degradation of 1,4-dichlorobenzene.

• Journal of Powder Materials
• /
• v.6 no.1
• /
• pp.18-35
• /
• 1999

Phase equilibria in the system Si3N4-TiC-TiCxN1-x-C-N were determined by thermodynamic calculations (CALPHAD-method). The reaction peaction paths for Si3N4-TiC and SiC-TiC composites in the Ti-Si-C-n system were simulated at I bar N2-pressure and varying terpreatures. At a temperature of 1923 K two tie-triangles (TiC0.34N0.66+SiC+C and TiC0.13N0.87+SiC+Si3N4) and two 2-phase fieds (TiCxN1-x+SiC; 0.13

• Korean Journal of Metals and Materials
• /
• v.47 no.9
• /
• pp.591-596
• /
• 2009

$TiN_xO_y/TiN_x$ multi-layer thin films with a high resistance(${\sim}k{\Omega}$) were deposited on $SiO_2/Si$ substrates at room temperature by sputtering. The $TiN_x$ thin films show island and smooth surface morphology in samples prepared by ${\alpha}$ and RF magnetron sputtering, respectively. $TiN_xO_y/TiN_x$ multi-layer in has been developed to control temperature coefficient of resistance(TCR) by the incorporation of $TiN_x$ layer(positive TCR) inserted into $TiN_xO_y$ layers(negative TCR). Electrical and structural properties of sputtered $TiN_xO_y/TiN_x$ multi-layer films were investigated as a function of annealing temperature. In order to achieve a stable high resistivity, multi-layer films were annealed at various temperatures in oxygen ambient. Samples annealed at $700^{\circ}C$ for 1 min exhibited good TCR value of approximately $-54 ppm/^{\circ}C$ and a stable high resistivity around $20k{\Omega}/sq$. with good reversibility.

• Journal of the Korean Society for Heat Treatment
• /
• v.11 no.3
• /
• pp.177-185
• /
• 1998

The purpose of this research is to investigate the effects of Co, Co-Ti addition on the sintering characteristic of $(Ti_{1-x}Alx)N$ material synthesized by the direct nitriding method for a application as a cermet material. The observed shrinkage rates of $(Ti_{1-x}Alx)N$ pellets increase with the additive (Co, Co-Ti) content, temperature and time, and also the pellets with the same additive content exhibit the shrinkage behavior that depends on the Ti/Al ratio. However, although the shrinkage rates in this study is the mast higher (36%), the density of the sintered $(Ti_{1-x}Alx)N$ pellet is below 80% density in theory because of the partial segregation and the dense band defect of AlCo compound. Consequentely, it is considered that Co was not effective as a binder material because the wettability of liquid Co metal on $(Ti_{1-x}Alx)N$ materials is poor, In $(Ti_{1-x}Alx)N$ with Ti-Co additive, the stoichiometric TiN is transformed by the under-stoichiometric TiNx(x<1.0) during sintering, leading to the good properties such as hardnees and hot oxidation.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2007.11a
• /
• pp.120-122
• /
• 2007

3성분계 $Ti-C_x-N_{1-x}$ 코팅막은 AIP(Arc Ion Plating)법에 의해 -25V의 바이어스와 $300^{\circ}C$의 분위기에서 스테인리스 스틸 기판 위에 증착시켰다. $Ti-C_x-N_{1-x}$ 코팅막 안의 탄소(carbon)는 유입가스 비 $CH_4/(CH_4+N_2)$를 변화시키며 합성하였다. 탄소(carbon)가 증가함으로써, $Ti-C_x-N_{1-x}$ 코팅막의 미세경도는 TiN 코팅막의 20 GPa로부터 x=0.52에서 최대 약 32 GPa로 측정되었다. 또한, 미세구조는 잔류응력과 관련 있으며 탄소 함량에 따라 평균마찰계수가 크게 감소하였다.

• Proceedings of the Korean Powder Metallurgy Institute Conference
• /
• 2006.09a
• /
• pp.436-437
• /
• 2006

The $Ag/TiO_{2-x}N_x$ nanoparticles were synthesized by photochemical deposition in a $TiO_{2-X}N_X$ suspension system. The prepared products were characterized by means of XRD, Uv-vis and photoluminescence spectra (PL). Its photocatalytic activity was investigated by the decomposition of methylene blue (MB) solution under illumination of visible and ultraviolet light, respectively. Compared to $TiO_{2-x}N_x$, the photocatalytic activity of the as-prepared $Ag/TiO_{2-x}N_x$ is obviously enhanced due to the decreasing recombination of a photoexcitated electron-hole pairs. The Mechanism in which photocatalytic activity is enhanced has been discussed in detail.

• Journal of the Korean institute of surface engineering
• /
• v.29 no.5
• /
• pp.525-531
• /
• 1996

(Ti1-xAlx)N films were deposited on high speed steel and silicon substrates by reactive sputtering in mixed $Ar-N_2$ discharges. Crystalline phases and microhardness of ($Ti_1_xAl_x$)N films were investigated with variation of the film composition and substrate RF bias voltage. With Al content x of about 0.6, crystalline phase of ( $Ti_1_xAl_x$N films was changed from single-phase NaCl structure to two phase mixture of NaCl and wurtzite structures: Microhardness of ($Ti_1_xAl_x$)N films was largely improved by applying RF bias voltage above 50 V during deposition. Hardness of ($Ti_1_xAl_x$)N films reached a maximum value for Al content x of about 0.4, and 1900 kg/$mm^2$ was obtained for 1$\mu m$-thick ($Ti_{0.6}Al_{0.4}$)N films.

• Journal of the Korean institute of surface engineering
• /
• v.34 no.2
• /
• pp.97-104
• /
• 2001

($Ti_{ 1-x}$$Al_{ x}$)N has been deposited on high speed steel (HSS) substrate using PECVD from the gas mixture of $TiC1_4$, $AlC1_4$, $NH_3$, $H_2$, and Ar. The correlation between the microstructure and the mechanical properties was investigated. ($Ti_{1-x}$$Al_{ x}$)N showed single phase NaCl-structure up to X=0.87, while a mixed phase of NaCl Type (Ti, Al) N and wurtzite structure AlN was observed for 0.87$Ti_{1-x}$ $Al_{x}$ )N became by degrees as increasing X, which made the hardness of the coating higher by Al addition. When the coating was composed of a mixed phase, however, the hardness decreased abruptly due to the effect of soft AlN phase. The wear volume of the coatings could be obtained as the concentration of the coating was varied, and the relation between the wear volume and hardness or the adhesion strength was discussed.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2007.11a
• /
• pp.42-42
• /
• 2007

무독성 원소로 조성된 Ti-30Ta-xZr(x=3, 7, 10, 15) 합금을 제조하여, HA박막과 금속사이의 계면이 생기는 문제점을 개선하기 위해 합금 표면에 HA/TiN 및 HA/ZrN 이중층을 형성시킨 후 전기화학적 방법으로 코팅의 영향을 조사하였다.