• Proceedings of the Korean Environmental Sciences Society Conference
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• 2008.11a
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• pp.452-457
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• 2008

분말 TiO$_2$를 코팅한 전극은 전기저항으로 인해 0.5 A 이상의 전류를 인가할 수 없었으며, 1 A를 적용하였을 때 60분의 반응시간 후 최종 RhB 농도를 측정한 결과 Ru/Ti 전극의 RhB 농도 감소 가장 큰 것으로 나타났고, Ru/Ti > Ti > SG-TiO$_2$ > Th-TiO$_2$로 나타났다. 전기분해 공정만 적용한 경우 RhB 농도 감소의 순서는 Ru/Ti = Ti > SG-TiO$_2$ > Th-TiO$_2$ 전극의 순서로 나타났다. UV만 적용한 경우 RhB 제거는 작았으며, Ti와 Ru/Ti 전극은 UV만 적용한 경우와 RhB 제거농도가 비슷하였는데 이는 전극 표면에서 광촉매 반응이 일어나지 않는다는 것을 의미한다. 반면 TiO$_2$를 전극 표면에 형성하거나 코팅한 전극은 UV만 적용한 경우보다 RhB 농도가 낮게 나타났고, TiO$_2$가 형성되거나 코팅된 전극은 P-TiO$_2$ > Th-TiO$_2$ > SG-TiO$_2$의 순서로 나타났으나 차이는 크지 않았다. 광전기촉매 공정에서 시너지 효과가 거의 없는 것은 전극 표면에 코팅되거나 형성된 TiO$_2$의 양이 적고 광촉매 반응에 의한 분해 정도가 낮아 전자-정공의 재결합 감소효과가 적기 때문인 것으로 사료되었다. Th-TiO$_2$와 SG-TiO$_2$ 전극의 경우 전해질로 Na$_2$SO$_4$를 사용한 경우의 RhB 농도가 NaCl을 사용한 경우보다 RhB 낮게 나타났으나, Ti와 Ru/Ti 전극의 경우는 반대 현상이 나타났다. 이와 같은 결과는 광촉매 반응이 높은 Th-TiO$_2$와 SG-TiO$_2$ 전극에서의 Cl$^-$의 광촉매 반응 저해현상이 높게 나타났기 때문이라고 사료되었다. 반면 DSA 전극인 Ti와 Ru/Ti 전극의 경우 광촉매 반응이 거의 나타나지 않기 때문에 주반응인 전기분해 반응에서의 촉진 반응이 지배적이기 때문에 Th-TiO$_2$와 SG-TiO$_2$ 전극과는 정 반대의 현상이 나타났다고 사료되었다. 전기/UV 공정에서는 최적 전류는 0.75 A, NaCl 투입량은 0.5 g/L로 나타났으며, 최적 UV램프 전력은 16 W인 것으로 나타났다.

• Journal of Powder Materials
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• v.9 no.5
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• pp.352-358
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• 2002

The effects of boron or manganese added as $B_4C$, Mn, $TiB_2$, B on TiC-30vo1.%$Ni_3Al$ cermet sintered at 1380 and $1400^{\circ}C$ for 1 hour, were examined in relation with shrinkage, relative density, microstructure, lattice parameter, hardness and fracture toughness ($K_{IC}$). The results are summarized as follows: 1) The highest shrink-age showed about 30.5% in the specimen added B$_4$C and the maximum relative density was about 99% in the specimen added $TiB_2$; 2) The grains of TiC were grown during sintering and made the surrounding structure by adding boron and manganese. The largest grain size showed about $2.8\mutextrm{m}$ in the specimen with boron sintered at $1400^{\circ}C$;3) The lattice parameter of TiC was about $4.325\AA$ and $Ni_3Al$ about $3.592\AA$ by adding other elements; 4) The highest hardness was about $1100kgf/\textrm{mm}^2$ in the specimen with B4C; 5) The fracture toughness ($K_{IC}$) showed about $15MNm^{-3/2}$ in the specimen added $TiB_2$.

• Journal of the Korean Ceramic Society
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• v.36 no.5
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• pp.471-477
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• 1999

Fe and Fe-Mo binder were used to produce TiB2 based cermet by a pressureless sintering. The densification behaviour of TiB2-Fe-Mo cermet during liquid-phase sintering in argon was studied in relation to binder phase charactertics. The effects of Mo addition and sintering condition on the sintering behaviour and mechanical properties were also investigated. TiB2-based cermets with Fe-Mo binder composition showed a better sinterability than the cermets with only Fe binder. In TiB2-Fe-Mo cermet higher densities in the wide temperature range were obtained and also fully densified sintered cermet were obtained at 1873K The enhancement in the densification phenomenon of TiB2-Fe-Mo system can be explained by improved liquid phase wettability associated with the roles of Mo components as solute atoms. When Fe-Mo binders were used cermets with a finer grain size and enhanced mechanical properties wereproduced and new phases such as Fe2B and Mo2FeB2 were observed in the sintered cermet. The highest bending strength was obtained from the 20vol% Fe-Mo cermet and these hardness-fracture toughness combination in the wide binder compositions is better than that of TiB2-Fe cermet. In order to improve mechanical properties microstructure control with high purity powders is desirable because high purity powders prevent the formation of Fe2B and Mo2FeB2 phase which comsume the ductile binder phase.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.4
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• pp.585-589
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• 2012

The characteristics of interface layer and the effect of mole fraction of inlet gas mixture($B_2H_6/H_2/N_2/TiCl_4$) on the microstructure of Ti(B,N) films were studied by microwave plasma hot filament CVD process. Ti(B,N) films were deposited on a substrate(STD-61) to develop a high performance of resistance wear coating tool. Ti(B,N) films were obtained at a gas pressure of 1 torr, bias voltage of 300 V and substrate temperature of $480^{\circ}C$ in $B_2H_6/H_2/N_2/TiCl_4$gas system. It was found that TiN, $TiB_2$, TiB and hexagonal boron nitride(h-BN) phases exist in thin layer on the STD-61.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.4
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• pp.632-639
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• 1997

Relative density and microstructure of the pressureless sintered TiC-$TiB_2$ composite has been studied. The maximum sintered density was 95% and the critical amounts of sintering aids were 1 wt% Fe and 3 wt% Ni. It was found that TiC matrix phase inhibited effectively grain growth of the dispersed $TiB_2$ phase. The TEM investigation reveals that the Ni-rich precipitates were solidified from the liquid phase, confirmed by the presence of the waved and/or step phase boundaries. The precipitates also acts as the origin of the dislocation formation in the matrix phases.

• Journal of Powder Materials
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• v.1 no.1
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• pp.15-20
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• 1994

The effect of SiC addition on sintering behaviors and microstructures of TiB2 ceramics were studied. The sintering of TiB2 was limited due to the surface diffusion and rapid grain growth at high temperature. However the addition of SiC to TiB2 ceramics improved the densification to above 99% of the theoretical density. The sintering of TiB2-SiC composite starts at 120$0^{\circ}C$ with the melting of the oxides in particle surface as impurities. After the reduction of the oxide by additional cabon at above 140$0^{\circ}C$, the grain boundary diffusion through the interface of TiB2-SiC play an important role. TEM observation showed neither chemical reactions nor other phases formed at the TiB2-SiC interfaces but the microcracks were observed due to the mismatch of thermal expansion between TiB2-SiC.

• Journal of the Korean Ceramic Society
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• v.45 no.9
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• pp.544-548
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• 2008

The formation of $TiB_2-SiC$ ceramics from $TiB_2$-Polycarbosilane (PCS) mixtures was investigated. The powder mixture of $TiB_2$ with PCS was pressed at $300^{\circ}C$ with 200 MPa and sintered at $1700{\sim}2000^{\circ}C$ for 1 h in a flowing Ar atmosphere. The sintered density of $TiB_2$ with PCS is 93.7% after sintering at $2000^{\circ}C$ for 1 h, which is slightly smaller than that of the specimen without PCS. The microstructure of $TiB_2$ with PCS consists of small and uniform $TiB_2$ particles with well dispersed SiC particles derived from PCS. It is believed that the addition of PCS was effective to suppress the grain growth of $TiB_2$.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.40-48
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• 1995

$TiB_2$-TiN double-layer coating have been prepared by ion beam enhanced deposition. AES, XRD, TEM and HRTEM were employed to characterize the $TiB_2$ layer. The microhardness of the coatings was evaluated by an ultra low-load microhardness indenter system, and the tribological behavior was examined by a ball-on-disc tribology wear tester. It was found that in a single titanium diboride layer, the composition is uniform along the depth of the film, and it is mainly composed of nanocrystalline $TiB_2$ with hexagonal structure, which resulted from the ion bombardment during the film growth. The hardness of the $TiB_2$ films increases with increasing ion energy, and approaches a maximum value of the $TiB_2$ films increases with increasing ion energy, and approaches a maximum value of 39 Gpa at ion energy of 85 keV. The tribological property of the TiB2 films is also improved by higher energy of 85keV. The tribological property of the $TiB_2$ films is also improved by higher energy ion beam bombardment. There is no major disparity in the mechanical properties of double-layer $TiB_2$/TiN coatings and TiN/$TiB_2$ coatings. Both show an improved wear resistance compared with single-layer $TiB_2$ films. The adhesion of double-layer coatings is also superior to that of single-layer films.

• Proceedings of the Korean Environmental Sciences Society Conference
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• 2008.11a
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• pp.464-467
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• 2008

성능이 우수한 다성분계 전극을 개발하기 위하여 Pt, Ru, Sn, Sb 및 Gd의 5 종류 금속을 이용하여 1성분계 전극의 성능과 산화제 생성량 및 2성분계 전극의 성능과 산화제 생성 경향을 고찰하여 다음의 결과를 얻었다. 1. RhB 농도 감소는 Ru/Ti > Sb/Ti > Pt/Ti > Sn/Ti > Gd/Ti 전극의 순서로 나타났으나 단위 전력당 2분간 제거된 RhB 농도 감소는 Ru/Ti > Sb/Ti > Pt/Ti > Gd/Ti > Sn/Ti 전극의 순서로 나타났다. 생성된 산화제 농도는 ClO$_2$ > free Cl > H$_2$O$_2$ > O$_3$의 순서였으며 Gd/Ti 전극의 경우 산화제가 거의 생성되지 않는 것으로 나타났다. 모든 전극에서 OH 라디칼이 거의 생성되지 않는 것으로 나타났다. Ru/Ti와 Sb/Ti 전극의 높은 RhB 분해와 산화제 생성 농도는 정확하지는 않지만 상관관계가 있는 것으로 나타났다. 2. Ru계 2성분 전극(Ru-Gd/Ti, Ru-Pt/Ti, Ru-Sn/Ti 및 Ru-Sb/Ti)은 모두 1성분계 전극보다 RhB 분해성능이 높아지는 것으로 나타났으며, Ru계 2성분 전극 중 가장 성능이 우수하였던 전극은 Ru:Sn=9:1 전극으로 나타났다. Sn-Sb/Ti 전극은 Sn:Sb=1:9의 전극 성능이 우수한 것으로 나타났으나 Sb/Ti 전극과의 차이는 크지 않은 것으로 나타났다. Pt계 전극(Pt-Gd/Ti, Pt-Sn/Ti, Pt-Sb/Ti)은 대체로 두 성분 혼합에 따른 RhB 분해효과 상승은 없는 것으로 나타났다. 2성분계 전극 중 RhB 제거 성능이 가장 우수하였던 Ru:Sn=9:1 전극에서 4종류의 산화제 생성 농도가 높은 것으로 나타났다. Ru:Pt=9:1 전극은 RhB 분해 성능이 5 전극 중 가장 낮았으며, 산화제도 생성량이 가장 적은 것으로 나타났다. Ru-Sn/Ti 계 전극의 RhB 분해 성능과 산화제 생성 농도가 실험한 모든 1, 2성분계 전극에서 높은 것으로 나타나 향후 3, 4성분계 전극 제조시 이를 바탕으로 제조하고 다른 물질들은 보조재료로서 사용할 필요성이 있는 것으로 사료되었다.

• Elastomers and Composites
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• v.44 no.4
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• pp.408-415
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• 2009

Iron-loaded activated carbon fibers (Fe-ACF) supported titanium dioxide ($TiO_2$) photocatalyst (Fe-ACF/$TiO_2$) was synthesized using a sol-gel method. Three different types of Fe-ACF/$TiO_2$ were obtained by treatment with different precursor of Fe, and characterized using BET, SEM, XRD and EDX analysis. The photocatalytic activity of Fe-ACF/$TiO_2$ was investigated by the degradation of Rhodamine B (Rh.B) solution under UV irradiation. From the experimental results, it was revealed that Fe-ACF/$TiO_2$ composites show considerable photocatalytic ability for the removal of Rh.B by comparing non-treated ACF/$TiO_2$ composites. And photo-Fenton reaction with Fe element was incoordinately influenced due to different precursor of Fe. It clearly indicates that Fe-ACF/$TiO_2$ composites prepared using $FeCl_3$ provided the highest photo-Fenton activity, then, which was affected by pH changes on the degradation of Rh.B.