• 제목/요약/키워드: $TiB_2$

검색결과 1,117건 처리시간 0.026초

Phase Orientation of TiC-$TiB_2$-SiC Ternary Eutectic Composite Prepared by an FZ Method

  • Tu, Rong;Li, Wenjun;Goto, Takashi
    • 한국분말야금학회:학술대회논문집
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    • 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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    • pp.859-860
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    • 2006
  • TiC-$TiB_2$-SiC system was a ternary eutectic, whose eutectic composition was 34TiC-$22TiB_2$-44SiC (mol%). TiC-$TiB_2$-SiC ternary eutectic composite were synthesized by a floating zone method using TiC, $TiB_2$ and SiC powders as starting materials. The TiC-$TiB_2$-SiC eutectic composite showed a lamellar texture. TiC(022), $TiB_2(010)$ and SiC(111) of the eutectic composite were perpendicular to the growth direction. TiC-$TiB_2$-SiC ternary eutectic composite had specific relationship among the crystal planes: TiC[011]//$TiB_2[010]$//SiC[112], TiC(200)//$TiB_2$(001)//SiC(402) and $TiC(1\bar{1}1)$//$TiB_2(101)$//SiC(220).

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SHS 마이크로파에 의한 TiZrB$_2$ 복합재료의 합성 및 특성연구 (A Study on Synthesis and Characterization of TiZrB$_2$ Composite by SHS Microwave)

  • 이형복;윤영진;오유근;안주삼
    • 한국세라믹학회지
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    • 제36권1호
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    • pp.7-14
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    • 1999
  • SHS 마이크로파를 이용하여 티타늄, 지르코니움과 보론분말을 혼합하여 TiZrB2 고용체를 합성된 분말의 분말특성과 소결체의 소결특성을 연구하였다. 합성 중 온도 profile 결과 연소온도와 연소속도는 Zr의 몰비가 증가함에 따라 증가 하였으며, Ti0.2Zr0.8B2조서에서 연소온도와 연소속도는 285$0^{\circ}C$, 14.6m/sec로 최고값을 얻었다. 190$0^{\circ}C$에서 30 MPa의 압력으로 60분간 고온가압소결한 TiZrB2고용체는 TiB2와 ZrB2로 상분리가 최고값을 얻었다. 190$0^{\circ}C$에서 30MPa의 압력으로 60분간 고압가압소결한 TiZrB2 고용체는 TiB2와 ZrB2로 상분리가 일어나 복합체가 형성되었으며, Ti0.8Zr0.2B2에서 가장 좋은 물성값을 나타내었는데 상대밀도, 꺽임강도, 파괴인성 및 경도는 각각 99%, 680MPa, 7.3MPam1/2, 2750Kg/$ extrm{mm}^2$이었다.

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Cu-TiB2 복합재료의 기계적 성질에 미치는 TiB2 입자의 영향 (The Influence of TiB2 Particle on the Mechanical Property of Cu-TiB2 Composites)

  • 강계명;최종운
    • 한국재료학회지
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    • 제14권1호
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    • pp.73-77
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    • 2004
  • The mechanical and electrical properties of $Cu-TiB_2$ composites prepared by hot extrusion and cold drawing according to the variation of $TiB_2$ contents and the size of $TiB_2$ particle have been studied. The experimental results showed that the electrical conductivity was decreased with increasing the $TiB_2$ content, and their tensile strength and hardness increased inversely. In the case of the same content of $TiB_2$ particle, the smaller $TiB_2$ particle, the higher their mechanical properties. The electrical conductivity of $Cu-TiB_2$ composites showed more than 70%IACS. Their yield strength and hardness were more than 120 MPa and HRB 60~70, respectively.

차세대 공정에 적용 가능한 Cu(B)/Ti/SiO2/Si 구조 연구 (A Study on Cu(B)/Ti/SiO2/Si Structure for Application to Advanced Manufacturing Process)

  • 이섭;이재갑
    • 한국재료학회지
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    • 제14권4호
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    • pp.246-250
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    • 2004
  • We have investigated the effects of boron added to Cu film on the Cu-Ti reaction and microstructural evolution of Cu(B) alloy film during annealing of Cu(B)/Ti/$SiO_2$/Si structure. The result were compared with those of Cu(B)/$SiO_2$ structure to identify the effects of Ti glue layers on the Boron behavior and the result grain growth of Cu(B) alloy. The vacuum annealing of Cu(B)/Ti/$SiO_2$ multilayer structure allowed the diffusion of B to the Ti surface and forming $TiB_2$ compounds at the interface. The formed $TiB_2$ can act as a excellent diffusion barrier against Cu-Ti interdiffusion up to $800^{\circ}C$. Also, the resistivity was decreased to $2.3\mu$$\Omega$-cm after annealing at $800^{\circ}C$. In addition, the presence of Ti underlayer promoted the growth Cu(l11)-oriented grains and allowed for normal growth of Cu(B) film. This is in contrast with abnormal growth of randomly oriented Cu grains occurring in Cu(B)/$SiO_2$ upon annealing. The Cu(B)/Ti/$SiO_2$ structure can be implemented as an advanced metallization because it exhibits the low resistivity, high thermal stability and excellent diffusion barrier property.

2원전자빔 증착법에 의한 티타늄붕화물($\textrn{TiB}_{x}$) 박막의 성장특성 (Growth characteristics of titanium boride($\textrn{TiB}_{x}$) thin films deposited by dual-electron-beam evaporation)

  • 이영기;이민상;임철민;김동건;진영철
    • 한국결정성장학회지
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    • 제11권1호
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    • pp.20-26
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    • 2001
  • Ti와 B을 각각의 증발원으로 한 2원 전자빔 증착법으로 500$^{\circ}$의 기판온도에서 (100) Si 기판 위에 티타늄 붕화물 (${TiB}_{x}$) 박막을 증착시켰다. 이 방법은 여러 가지 boron-to-totanium ratio ($0{\le}B/Ti \le 2.5$)를 가지는 비당량 (${TiB}_{x}$ 박막의 표면 조도 역시 B/Ti비에 의존하여 변화되었다. 그리고 Pure Ti 박막은 (002)면의 우선 성장거동을 나타내었으나, $B/Ti{\ge}1.0$의 경우 (111)면의 우선 성장거동을 보이는 단일상의 TiB 박막이 성장되었다. 그러나 B농도가 더욱 증가됨에 따라 육방정계의 ${TiB}_{2}$상이 형성되기 시작하여 $B/Ti{\ge}2.0$ 의 조성비를 가지는 박막에서는 단일상의 ${TiB}_{2}$ 화합물을 나타내었다. 그리고 Si 기판상에 증착된 ${TiB}_{x}$ 박막의 잔류응력은 B/Ti비에 의존하나, 2원 전자빔 증착법으로 성장된 모든 박막에서 3~$20{\times}^9$dyn/$\textrm{cm}^2$ 정도의 인장응력을 나타내었다.

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SHS법에 의한 $TiB_2-TiC$ 복합체의 소결특성에 관한 연구 (Study on Sintering Properties of $TiB_2-TiC$ Composite by Self-Propagating High Temperature Synthesis Method)

  • 이형복;조덕호;장준원
    • 한국세라믹학회지
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    • 제29권7호
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    • pp.577-585
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    • 1992
  • TiB2 and TiC were prepared from the mixture of metal titanium, boron and graphite powders in Argon atmosphere by Self-propagating High-temperature Synthesis method. The sintered properties of TiB2-TiC composite as a function of TiC content and sintering temperature were investigated in TiB2 matrix. The sintered properties were the most excellent at 10 wt% TiC content in TiB2-TiC composite. The relative density, M.O.R strength, hardness and fracture toughness of TiB2-10 wt% TiC composite sintered at 190$0^{\circ}C$ for 90 min by hot-pressing under the pressure of 30 MPa were 98.6%, 634 MPa, 2128.1 kg/$\textrm{mm}^2$ and 4.09 MN/m3/2, respectively.

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Cu(B)/Ti/SiO2 구조를 열처리할 때 일어나는 미세구조 변화에 미치는 Ti 하지층 영향 (Effects of Ti Underlayer on Microstructure in Cu(B)/Ti/SiO2 Structure upon Annealing)

  • 이재갑
    • 한국재료학회지
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    • 제14권12호
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    • pp.829-834
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    • 2004
  • Annealing of $Cu(B)/Ti/SiO_2$ in vacuum has been carried out to investigate the effects of Ti underlayer on microstructure in $Cu(B)/Ti/SiO_2$ structures. For comparison, $Cu(B)/Ti/SiO_2$ structures was also annealed in vacuum. Three different temperature dependence of Cu growth can be seen in $Cu(B)/Ti/SiO_2$; B precipitates- pinned grain growth, abnormal grain growth, normal grain growth. The Ti underlayer having a strong affinity for B atoms reacts with the out-diffused B to the Ti surface and forms titanium boride at the Cu-Ti interface. The formation of titanium boride acts as a sink for the out-diffusion of B atoms. The depletion of boron in grain boundaries of Cu films, as results of the rapid diffusion of B along the grain boundaries and the insufficient segregation of B to the grain boundaries, induces grain boundaries to migrate and causes the abnormal grain growth. The increased bulk diffusion coefficient of B within Cu grains can be responsible for the normal grain growth occurring in the annealed $Cu(B)/Ti/SiO_2\;at\;600^{\circ}C$. In contrast, the $Cu/SiO_2$ structures show only the abnormal growth of grains and their sizes increasing as the temperature increases above $400^{\circ}C$.

SHS법에 의한 $TiB_2-Al_2O_3$계 복합물의 합성 및 상압소결에 관한 연구 (Synthesis of $TiB_2-Al_2O_3$ Composite by Self-Propagating High Temperature Synthesis (SHS) and Its Pressureless Sintering)

  • 최상욱;조동수;김세용;남건태
    • 한국세라믹학회지
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    • 제31권5호
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    • pp.552-560
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    • 1994
  • A composite of TiB2-Al2O3 system was successfully prepared from a mixture of TiO2, B2O3, and Al by self-propagating high temperature synthesis (SHS) with a novel characteristic, utilizing the internal oxidation heat of aluminium metal of the mixture, instead of by a conventional technique, externally heating a mixture of Ti, B and Al2O3. From a mixture with B/Ti molar ratio of =2.0, pure two phases of TiB2 and $\alpha$-Al2O3 with good crystallinity and small, uniform sizes were formed. However, when the B/Ti molar ratio of the mixture goes to a value less than 2.0, in addition to the above main minerals, a small smounts of metastable phases such as TiB and Ti3B4 were formed. It was found that about 60%, the optimum green density of compacts gave their highest reaction rate and temperature during SHS process. TiB2-Al2O3 system composite with B/Ti molar ratio of =2.0 could be pressurelessly sintered even at 190$0^{\circ}C$ under Ar gas flows without any addition of sintering aids, showing their good properties such as 91.2% in relative density, 2750 kgf/$\textrm{mm}^2$ in Vickers hardness and 2620 kgf/$\textrm{cm}^2$ in flexural strength.

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TiB2코팅이 함침법으로 제조되는 B4C/Al 복합체의 기계적 특성에 미치는 영향 (Effect of TiB2 Coating on the Mechanical Properties of B4C/Al Composites Prepared by Infiltration Process)

  • 김선혜;임경란;심광보;김창삼
    • 한국세라믹학회지
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    • 제40권8호
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    • pp.777-783
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    • 2003
  • B$_4$C/Al 복합체의 기계적 물성은 제조 과정에서 B$_4$C와 Al의 반응에 의한 반응생성물의 종류와 양에 의해서 결정되므로, 강하고 경량 소재로서의 특성이 요구되는 복합체를 만들려면 반응생성물을 조절할 필요가 있다. TiB$_2$는 알루미늄과 반응성이 거의 없고 B$_4$C보다 낮은 접촉각(100$0^{\circ}C$에서 85$^{\circ}$)을 가지고 있다. 그러므로 B$_4$C를 TiB$_2$로 코팅하면 B$_4$C/Al복합체를 함침법으로 제조하는 경우 알루미늄의 함침 온도를 낮출 수 있다. 본 연구에서는 TiB$_2$가 B$_4$C/Al 복합체의 미세구조와 기계적 특성에 미치는 영향을 조사하였다. TiB$_2$를 코팅한 B$_4$C 분말을 졸겔법을 이용하여 준비하였다. B$_4$C 입자에 코팅된 TiB$_2$ 입자 크기는 20-50 nm이었다. TiB$_2$를 코팅하고 제작한 B$_4$C/Al 복합체에는 l7wt%의 미반응 알루미늄이 남아있었고, 코팅하지 않고 제작한 것에는 l4 wt%가 남았다. 결과적으로 코팅하고 제작한 복합체는 코팅하지 않고 제작한 것보다 파괴인성은 높고 경도는 낮았으며, 이러한 결과에서 TiB$_2$가 알루미늄의 함침 온도를 낮추고 B$_4$C와 Al이 반응하는 것을 억제하고 있다는 것을 알 수 있었다.

전차선용 Cu-$TiB_2$ 복합재료의 마모거동에 관한 분석 (The Analysis on Wear Behavior of Cu-$TiB_2$ Composite For Contact Wire)

  • 김정남;이태우;권성태;강계명
    • 한국철도학회:학술대회논문집
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    • 한국철도학회 2004년도 추계학술대회 논문집
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    • pp.704-709
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    • 2004
  • The wear behavior and the mechanical property of Cu-$TiB_2$ composites were examined. Cu-$TiB_2$ composites were fabricated by hot extrusion and cold drawing with $TiB_2$ contents(1$\∼$5vol.$\%$) and the size of $TiB_2$ particles(10$\mu$m and 20$\mu$m). The pin-an-disk wear test was carried out under dry sliding wear conditions which loads varied with from 20N to 100N. At the time, counterpart wear material used SM45C. The experimental results showed that the friction coefficient and wear rate decreased with increasing the $TiB_2$ contents and decreasing the size of $TiB_2$ particle. Also, the depth of plastically deformed zone decreased with increasing the $TiB_2$ contents and decreasing the size of $TiB_2$ particle.

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