• 한국전기전자재료학회논문지
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• 제11권6호
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• pp.436-441
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• 1998

$Pt/SrTiO_3/Pb_x(Zr_{0.52}, Ti_{0.48})O_3/SrTiO_3/Si$ structure was prepared by rf-magnetron sputtering method for use in nondestructive read out ferroelectric RAM(NDRO-FEAM). PBx(Zr_{0.52}Ti_{0.48})O_3}$(PZT) and $SrTiO_3$(STO) films were deposited respectively at the temperatures of $300^{\circ}C and 500^{\circ}C$on p-Si(100) substrate. The role of the STO film as a buffer layer between the PZT film and the Si substrate was studied using X-ray diffraction (XRD), Auger electron spectroscopy (ASE), and scanning electron microscope(SEM). Structural analysis on the interfaces was carried out using a cross sectional transmission electron microscope(TEM). For PZT/Si structure, mostly Pb deficient pyrochlore phase was formed due to the serious diffusion of Pb into the Si substrate. On the other hand, for STO/PZT/STO/Si structure, the PZT film had perovskite phase and larger grain size with a little Pb interdiffusion. the interfaces of the PZT and the STO film, of the STO film and the interface layer and $SiO_2$, and of the $SiO_2$ and the Si substate had a good flatness. Across sectional TEM image showed the existence of an amorphous layer and $SiO_2$ with 7nm thickness between the STO film and the Si substrate. The electrical properties of MIFIS structure was characterized by C-V and I-V measurements. By 1MHz C-V characteristics Pt/STO(25nm)/PZT(160nm)/STO(25nm)/Si structure, memory window was about 1.2 V for and applied voltage of 5 V. Memory window increased by increasing the applied voltage and maximum voltage of memory window was 2 V for V applied. Memory window decreased by decreasing PZT film thickness to 110nm. Typical leakage current was abour $10{-8}$ A/cm for an applied voltage of 5 V.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2006년도 춘계학술발표회 초록집
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• pp.107-108
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• 2006

• 센서학회지
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• 제7권5호
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• pp.364-371
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• 1998

Field programmable gate array (FPGA)의 전압 프로그램 요소(voltage programmable link)로써 사용될 새로운 안티퓨즈를 제조하였다. 제조된 안티퓨즈는 Al/$BaTiO_3/SiO_2$/TiW-실리사이드 구조를 갖는다. 안티퓨즈의 프로그램 전압은 $BaTiO_3$의 증착 두께를 조절함으로써 정확하게 조절할 수 있었다. $BaTiO_3(120{\AA})$/$SiO_2(120{\AA})$의 안티퓨즈에서 TiW-실리사이드 전극에 (-)극성을 인가하여 측정된 프로그램 전압은 14.4 V였으며, on-저항은 $40-50{\Omega}$의 값을 갖는다. 안티퓨즈의 전류-전압 특성은 Frenkel-Poole 전도 기구를 따르고 있으며, 그 특성은 인가 전압의 극성에 따라 차이를 보였다. 이것은 Al/$BaTiO_3$계면과 TiW-silicide/$SiO_2$계면 특성이 다르기 때문이다.

• 한국세라믹학회지
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• 제37권8호
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• pp.792-798
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• 2000

Alumina composites reinforced with SiC whiskers only or combinded with TiC particles were prepared by hot-pressing at 1850$^{\circ}C$ for 1h. The mechanical properties and microstructures of composites were investigated in this study. By of addition either 20 vol% SiC whiskers or 20 vol% TiC particles, the flexural strength fo alumina was increased from 360 MPa to 650 MPa or 730 MPa, respectively, and the KIC was also increased from 3.5 MPa$.$m1/2 to 5.5MPa$.$m1/2 or 4.4MPa$.$m1/2, respectively. In the case of composites with 20 vol% SiC whiskers and 2 vol% TiC particles. The flexural strength and KIC showed relatively high value of 800 MPa and 5.3MPa$.$m1/2, respectively. The improvement of mechanical properties was considered to be due to both the smaller average grain size and the crack deflection.

• 대한금속재료학회지
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• 제47권10호
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• pp.660-666
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• 2009

The consolidation of mechanical alloyed $Ti_5Si_3$ powder by electro-discharge-sintering has been investigated. A single pulse of 2.5 to 8.0 kJ/0.34 g was applied to each powder mixture using 300 and $450{\mu}F$ capacitors. A bulk-like solid with $Ti_5Si_3$ phase has been successfully fabricated by the discharge with an input energy of more than 2.5 kJ in less than $160{\mu}sec$. Micro-Vickers hardness was found to be higher than 1350, which is significantly higher than that of a conventional high temperature sintered sample. The formation of $Ti_5Si_3$ and consolidation occurred through a fast solid state diffusion reaction.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권12호
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• pp.573-577
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• 2005

[$TiO_2$] sol and $SiO_2$ sol were prepared using sol-gel method. As $H_{2}O$/Alkoxide ratios increased, sol had cluster structure and as $H_{2}O$/Alkoxide ratios decreased, sol had linear structure. Gelation time of $TiO_2$ sol was faster than that of $SiO_2$ sol according to the time. In comparison with initial viscosity between $TiO_2$ sol and $SiO_2$ sol, $TiO_2$ sol was highest at $H_{2}O/Ti(OC_{3}H_{7})_{4}=5$, $SiO_2$ sol was almost constant according to $H_{2}O/Si(OC_{2}H_{5})_{4}$ ratios.

• 한국진공학회지
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• 제12권4호
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• pp.218-227
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• 2003

AlGaAs/GaAs HBT 에미터 오믹 접촉을 위해 n형 InGaAs에 대한 Pd/Si/Ti/Pt 및 Pd/Si/Pd/Ti/Au 오믹 접촉 특성을 조사하였다. Pd/Si/Ti/Pt 오믹 접촉의 경우, 증착 상태에서는 접촉 비저항을 측정할 수 없을 정도의 비오믹 특성을 보였으며, $375^{\circ}C$에서 10초 동안 열처리한 경우 $5\times10^{-3}\Omega\textrm{cm}^2$의 높은 접촉 비저항을 나타내었다. 그러나 열처리 조건을 $425^{\circ}C$, 10초로 변화시킬 경우 $2\times10^{-6}\Omega\textrm{cm}^2$의 낮은 접촉 비저항을 나타내었다. Pd/Si/Pd/Ti/Au 오믹 접촉의 경우, $450^{\circ}C$까지의 열처리 동안에 전반적으로 우수한 오믹 특성을 나타내어 $400^{\circ}C$, 20초의 급속 열처리 조건에서 최저 $3.9\times10^{-7}\Omega\textrm{cm}^2$의 접촉 비저항을 나타내었다. 두 오믹 접촉 모두 오믹 재료와 InGaAs의 평활한 계면을 유지하면서 우수한 오믹 특성을 나타내어, 화합물 반도체 소자의 오믹 접촉으로 충분히 응용 가능하였다. Pd/Si/Ti/Pt 및 Pd/Si/Pd/Ti/Au를 AlGaAs/GaAs HBT의 에미터 오믹 접촉으로 사용하여 제작된 HBT 소자의 고주파 특성을 측정한 결과, 차단 주파수가 각각 63.9 ㎓ 및 74.4 ㎓로, 또한 최대공진 주파수가 각각 50.1 ㎓ 및 52.5 ㎓로 우수한 작동특성을 보였다.

• 한국주조공학회지
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• 제20권4호
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• pp.254-259
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• 2000

Metal matrix composites(MMCs) reinforced with hard particles have many potential application in aerospace structures, auto parts, semiconductor package, heat resistant panels, wear resistant materials and so on. In this work, the effect of SiC partioel sizes(50 and 100 ${\mu}m$) and additional elements such as Si, Cu and Ti on the microstructure and the wear property of $Al-5Mg-X(Si,Cu,Ti)/SiC_p$ composites produced by pressureless infiltration method have been investigated using optical microscopy, scanning eletron microcopy(SEM) with EDS(energy dispersive spectrometry), hardness test, X-ray diffractometer(XRD) and wear test. In present study, the sound $Al-5Mg-X(Si,Cu,Ti)/SiC_p$(50 and 100 ${\mu}m$) composites were fabricated by pressureless infiltration method. The $Al-5Mg-0.3Si-O.1Cu-O.1Ti/SiC_p$ composite with $50 {\mu}m$ size of SiC particle has higher hardness and better wear property than any other composite with $100{\mu}m$ size of SiC particle produced by pressureless infiltration method. The hardness and wear property of $Al-5Mg/SiC_p$(50 and 100 ${\mu}m$) composites were enhanced by the addition of Si, Cu and Ti in Al-5%Mg matrix alloy.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.51-54
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• 2000

In this paper, $Ba_{0.5}$Sr$_{0.5}$TiO$_3$ thin films were prepared on Pt/Ti/SiO$_2$/Si substrate by RF magnetron sputtering method. We investigated effect of deposition conditions (especially RF input power) on structural properties of BST thin films. Deposit conditions of BST films were set working gas ratio, Ar:O$_2$= 70 : 30, working pressure 10mTorr, and RF input power 25W, 50W, 75W and 100W. Post-annealing using rapid thermal annealing(RTA) performed at 45$0^{\circ}C$, 55$0^{\circ}C$, $650^{\circ}C$, and 75$0^{\circ}C$ in oxigen ambient for 60 sec, respectively. The structural properties of BST films on Pt/Ti/SiO$_2$/Si substrate analysed by X-ray diffraction(XRD).).).

• 한국재료학회지
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• 제17권3호
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• pp.125-131
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• 2007

[ $TiO_{2}-solution$ ] was aaded in $SiO_{2}-solution$ by various composition. $SiO_{2}-TiO_{2}$ thin films were obtained by the dip-coating method on the $SiO_{2}$ glass substrates, and then heat-treated at various temperature. Nano-size $TiO_{2}$ particles dispersed $SiO_{2}-TiO_{2}$ films showed absorption peak by quantum size effect at short wavelength region $350{\sim}400nm$, which made them good candidates for non-linear optical materials and photo-catalytic materials. The thickness of $SiO_{2}-TiO_{2}$ films were $300{\sim}430nm$. The contact angle of $SiO_{2}-TiO_{2}$ films for water was $5.3{\sim}47.9^{\circ}$, and therefore it is clear that $SiO_{2}-TiO_{2}$ films have super hydrophilic properties and the self-cleaning effects.