• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.426-429
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• 2001

The $BaTiO_{3}+xNb_{2}O_{5}$[x=6, 8, 10wt%] ceramics were prepared by conventional mixed oxide method. The structural properties of the $BaTiO_{3}+xNb_{2}O_{5}$ ceramics with the sintering temperature and addition of $Nb_{2}O_{5}$ were investigated by XRD and SEM. Increasing the sintering temperature, the $2{\Theta}$ value of BT (110) peak was shifted to the lower degree and intensity of the BN (310) peak was increased. Increasing the addition of $Nb_{2}O_{5}$, the intensity of BN (100) peak was decreased and BN (310), (110) peaks were increased. The grain size of the $BaTiO_{3}+xNb_{2}O_{5}$ ceramics sintered at $1350^{\circ}C$ were almost uniform. In the $BaTiO_{3}+xNb_{2}O_{5}$ ceramics sintered at $1350^{\circ}C$, the dielectric constant and dielectric loss were 5424, 0.02 respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.533-536
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• 2001

Single crystal cubic silicon carbide(3C-SiC) thin film were deposited on Si(100) substrate up to a thickness of $4.3{\mu}m$ by APCVD(atmospheric pressure chemical vapor deposition) method using hexamethyildisilane(HMDS) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like. The growth rate of the 3C-SiC films was $4.3{\mu}m/hr$. The 3C-SiC epitaxical layers on Si(100) were characterized by XRD(X-ray diffraction), raman scattering and RHEED(reflection high-energy electron diffraction), respectively. The 3C-SiC distinct phonons of TO(transverse optical) near $796cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The deposition films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$). Also, with increase of films thickness, RHEED patterns gradually changed from a spot pattern to a streak pattern.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.293-294
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• 2005

We have investigated dielectric properties depending on frequency in organic light -emitting diodes using 8-hydroxyquinoline aluminum ($Alq_3$) as an electron transport and emissive material. We analyzed the dielectric properties of organic light-emitting diodes using impedance of characteristics. impedance characteristics was measured complex impedance Z and phase $\Theta$ in the frequency range of 40 Hz to $10^8$ Hz. We obtained complex electrical conductivity, dielectric constant, and loss tangent (tan$\delta$) of the device at room temperature. From these analyses, we are able to interpret a conduction mechanism and dielectric properties contributed by an interfacial and orientational polarization.

• Transactions of the Korean Society of Automotive Engineers
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• v.1 no.3
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• pp.1-11
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• 1993

An experimental study was carried out to evaluate the characteristics of transient performance of carburettered gasoline engine under rapid accelerating transient driving conditions. In order to evaluate the characteristics of transient performance quantitatively, the concept of dead time $t_d$ response delay time $t_r$ are introduced. Performance parameters such as air mass fiowrate Gat, engine speed N, manifold boost pressure Pb, and output torque T are measured simultaneously during the rapid opening of the throttle valve by the stepping motor. During the rapid opening of the throttle valve, air mass fiowrate Gat is increased immediately without delay time, but response of engine revolution N, and output torque T are delayed. Therefore hesitation, and stumble phenomena are occurred. Dead time $t_d$ and response delay time $t_r$ of engine revolution N, which is extremely delayed comparing to other performance parameters, are respectively 0.2-0.3sec., 3.0-4.6sec., and dead time rate $t_d/{\Delta}t$ and response delay time rate $t_r/{\Delta}t$ are linearly increased with the throttle valve opening rate ${\theta}$ during the acceleration from 12 degree to 20 degree at 1250rpm.

• Journal of Korean Society of Steel Construction
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• v.15 no.3
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• pp.281-290
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• 2003

A series of connection tests of portal frames which were composed of cold-formed steel studs and rafters was carried out to study the moment-rotation relation, the rotational rigidity, and the yield and the ultimate moment of the connections. The main factors of the tests were the thickness, the shape of the connecting members which were made of mild steel, and the torsional restraints of the test specimens. The test results were compared with those obtained through the non-linear analysis, for verification. The secant stiffness estimated from the experimental moment-rotation curve was proposed for the rotational rigidity of semi-rigid connections, and its validity was verified in the structural frame analysis.

• Journal of the Korean Society for Precision Engineering
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• v.23 no.2 s.179
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• pp.43-50
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• 2006

Recently, with rapid development of semiconductor and flat panel display, the manufacturing equipments are required to have large travel range, high productivity, and high accuracy. In this paper, an ultra precision decoupled dual servo (DDS) system is proposed to meet these requirements. And a control scheme for the DDS is studied. The proposed DDS consists of a $XY{\Theta}$ fine stage for handling work-pieces precisely and a XY coarse stage for large travel range. The fine stage consists of four voice coil motors (VCM) and air bearing guides. The coarse stage consists of linear motors and air bearing guides. The DDS is mechanically decoupled between coarse stage and fine stage. Therefore, both stages must be controlled independently and the performance of the DDS is mainly determined by the fine stage. For high performance tracking, the controller of fine stage consists of time delay control (TDC) and perturbation observer while the controller of coarse stage is TDC alone. With these individual controllers, two kinds of dual-servo control strategies are suggested: master-slave type and parallel type. By simulations and experiments, the performances of two dual-servo control strategies are compared.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.31 no.3 s.258
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• pp.225-233
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• 2007

The growth of GaN on the patterned substances has proven favorable to achieve thick, crack-free GaN layers. In this paper, numerical modeling of transport and reaction of species is performed to estimate the growth rate of GaN from tile reaction of TMG(trimethly-gallium) and ammonia. GaN growth rate was estimated through the model analysis including the effect of species velocity, thermal convection and chemical reaction, and thermal condition for the uniform deposition was to be presented. The effect of shape and construction of microscopic pattern was also investigated using a simulator to perform surface analysis, and a review was done on the quantitative thickness and shape in making GaN layer on the pattern. Quantitative analysis was especially performed about the shape of reactor geometry, periodicity of pattern and flow conditions which decisively affect the quality of crystal growth. It was found that the conformal deposition could be obtained with the inclination of trench ${\Theta}>125^{\circ}$. The aspect ratio was sensitive to the void formation inside trench and the void located deep in trench with increased aspect ratio.

• Proceedings of the KSME Conference
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• 2000.04b
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• pp.472-478
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• 2000

An experimental study is performed to analyze flow structures behind a local suction/blowing in a flat-plate turbulent boundary layer, The local forcing is given to the boundary layer flow by means of a sinusoidally oscillating jet issuing from a thin spanwise slot at the wall. The Reynolds number based on the momentum thickness is about $Re_{\theta}=1700$. The effects of local forcing are scrutinized by altering the forcing frequency $(0.011{\leq}f^+{\leq}0.044)$. The forcing amplitude is fixed at $A_0=0.4$. It is found that a small local forcing reduces the skin friction, and this reduction increases with the forcing frequency. A phase-averaging technique is employed to capture the coherent structures. Velocity signals are decomposed into a periodic part and a fluctuating part. An organized spanwise vortical structure is generated by the local forcing. The larger reduction of skin friction for the higher forcing frequencies is attributed to the diminished adverse effect of the secondary vortex. An investigation of the random fluctuation components reveals that turbulent energy is concentrated near the center of vortical structures.

• Journal of the Society of Naval Architects of Korea
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• v.34 no.4
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• pp.148-157
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• 1997

In this paper, the flow around a V-shaped plate positioned against horizontal flow is numerically simulated by using finite volume method and experimentally visualized in two dimensional tank by dye injection method. The upwelling flow artificially induced by V-shaped plate mixes the stratified stagnant flow. It can be applied to mitigate the eutrophication and stratification of sea in the vicinity of offshore structures.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.103-103
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• 2011

The epitaxial Cu-doped ZnO and pure ZnO thin films were grown on Al2O3 (0001) substrates by RF sputtering method. The structures and crystallographic orientations were investigated using X-ray diffraction (XRD) and X-ray absorption spectroscopy. From the XRD pattern, it is observed that peak positions shift towards higher $2{\theta}$ value with Cu doping. The ${\omega}$-scan measurements at the (0002) diffraction peak for these samples reveal that the full-widths at half-maxima (FWHMs) are about $0.017-0.019^{\circ}$, which indicate a good c-axis orientation of the Zn1-xCuxO films. From phi-scan, all of the Zn1-xCuxO films were epitaxially grown. EXAFS measurements also demonstrated that Cu incorporated into a Zn-atom position substitutionally. All the results confirmed that copper ion were well incorporated into the ZnO lattices by substituting Zn sites without changing the wurtzite structure and no secondary phase existed in Cu-doped ZnO thin films.