• Progress in Superconductivity
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• 제1권1호
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• pp.36-41
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• 1999

Methods for mode identification and accurate measurements of the unloaded Q ($Q_0$) of a dielectric-loaded $TE_{01{\delta}}$ mode cavity resonator with HTS endplates are proposed. A resonator with a sapphire rod and $YBa_2Cu_3O_{7-x}$(YBCO) endplates was prepared and its microwave properties were studied at temperatures above 30 K. The $TE_{01{\delta}}$ mode $Q_0$ of the resonator, designed to work as a tunable resonator with variations in the gap distance (s) between the sapphire rod and the top YBCO, was more than 1000000 at s = 0 mm and at 30 K with the resonant frequency of 19.56 GHz. The $TE_{01{\delta}}$ mode $Q_0$ decreases as s increases for s < 2 mm until mode couplings between the $TE_{01{\delta}}$ mode and other modes appeared at s = 2 mm. Significant dependence of the $TE_{01{\delta}}$ mode $Q_0$ on the input and output coupling constants was also observed. Applications of the open-ended $TE_{01{\delta}}$ mode cavity resonator for a tunable resonator with a very high Q as well as a characterization tool for the surface resistance measurements of HTS films are described.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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• pp.114-115
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• 2007

In this study, low temperature sintering property of the $0.6TiTe_3O_8-0.4MgTiO_3$ ceramics with sintering adds were investigated for LTCC application which enable to cofiring with Ag electrode. $TiTe_3O_8$ mixed with $MgTiO_3$ to improve the temperature property. In the X-ray diffraction patterns, the columbite structure of $TiTe_3O_3$ phase and ilmenite structure of $MgTiO_3$ phase were coexisted in all specimens. In the case of $H_3BO_3$ addition, the bulk density and dielectric constant were decreased but quality factor was increased with amount of $H_3BO_3$ additions. The TCRF of the $0.6TiTe_3O_8-0.4MgTiO_3+xwt%H_3BO_3$ ceramics were moved to positive direction. In another case, SnO addition, the bulk density and dielectric constant were increased but Quality factor was decreased with amount of SnO additions. The TCRF of the $0.6TiTe_3O_8-0.4MgTiO_3$+ywt%SnO ceramics were shifted to negative direction. The dielectric constant, quality factor and TCRF of the $0.6TiTe_3O_8-0.4MgTiO_3$ ceramics with $2wt%H_3BO_3$ and 2.5wt%SnO sintered at $830^{\circ}C$ for 1h, were 28.5, 39,570GHz, $+9.34ppm/^{\circ}C$ and 29.86, 35,80000z, $-0.58ppm/^{\circ}C$, respectively.

• 한국전기전자재료학회논문지
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• 제18권1호
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• pp.57-61
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• 2005

The microwave dielectric properties of 0.6TiTe$_3$O$_{8}$-0.4MgTiO$_3$ ceramics with H$_3$BO$_3$-SnO were investigated to improve the sintering condition for the LTCC. According to the X-ray diffraction patterns, 0.6TiTe$_3$O$_{8}$-0.4MgTiO$_3$ ceramics with H$_3$BO$_3$-SnO had the columbite structure of TiTe$_3$O$_{8}$ phase and the ilmenite structure of MgTiO$_3$ phase and there were no second phase. Increasing the addition of H$_3$BO$_3$-SnO, the density and dielectric constant of the 0.6TiTe$_3$O$_{8}$-0.4MgTiO$_3$ ceramics were increased but the quality factor was decreased. The temperature coefficient of resonant frequency was shifted to the negative(-) direction with addition of H$_3$BO$_3$-SnO.EX>-SnO.

• 한국재료학회지
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• 제12권8호
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• pp.650-655
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• 2002

$SiO_2$ gels containing dispersed fine Te metal particles have been prepared by the sol- gel method using a starting solution containing Tetraethoxy Silane (Si($OC_2$ $H_{5}$ )$_4$), $H_2$O, Ethylalchol ($C_2$$H_{5}$OH), Nitric Acid ($HNO_3$) and Tellurium Tetracholoride ($TeCl_4$) in a several molar ratio. Gelling time of sols was about 3 days and viscosity of solution was very low about 2~3 cP for 3 days. Heat-treatments of the gel have been performed at 500, 700, 900, 1100 and $1300^{\circ}C$ for 1 hour, respectively. We have investigated TG-DTA, X-ray diffraction patterns and SEM of heat-treatmented gels. The size of Te fine particles dispersed in $SiO_2$ gel was about 0.8~1 $\mu\textrm{m}$ and the shape was almost quadrangle.

• 한국전기전자재료학회논문지
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• 제20권1호
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• pp.86-91
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• 2007

Contact material is widely used as electrical parts. Ag-CdO has a good wear resistance and stable contact resistance. But the disadvantages of Ag-Cd alloy are coarse Cd oxides and harmful metal, Cd. Then Ag-Sn alloy that has stable and fine Sn oxide at high temperature has been developed. In order to investigate the effect of Te additional that affects the formation of the oxide layer on the surface and the formation of oxide in matrix Ag, we studied the microstructures and properties of Ag-Sn-In(-Te) material fabricated by rapid solidification process. The experimental procedure were melting using high frequency induction, melt spinning, and internal oxidation. Specimens were examined and analyzed by Transmission electron microscopy(TEM), energy dispersive X-ray spectroscopy(EDS) and Vickers hardness. As a result, internal oxidation was completed even at $600^{\circ}C$. Te forms coarse $In_{2}TeO_{6}$ phase and makes fine and well dispersed $SnO_{2}$ Phase. 0.3 wt% Te shows favorable properties.

• 한국군사과학기술학회지
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• 제15권4호
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• pp.502-506
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• 2012

In order to find the structural characteristics of the thin films of group II-VI semiconductor compounds compared with those of powder materials, films were made of 4 powders of ZnS, CdS, CdSe, and CdTe(Aldrich), each with 99.99 % purity. For the ZnS/CdS multi-layers, the ZnS layer was coated over the CdS layer on an $AlO_x$ membrane, which served as a protective layer within a vacuum at the average speed of 1 ${\AA}$/sec. After studying the structures of the group II-VI semiconductor thin films by using X-ray spectroscopy, we found that the ZnS, ZnS/CdS, CdS, and CdSe films were hexagonal and exhibited some degree of preferred orientation. Also, the particles of the thin films of II-VI semiconductor compounds proved to be more homogeneous in size compared to those of the powder materials. These results were further verified through scanning electron microscopy(SEM), EDX analysis, and powder and thin film X-ray diffraction.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권4호
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• pp.144-148
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• 2005

In this study, the microwave dielectric properties of $0-6TiTe_3O_8-0.4MgTiO_3$ ceramic with $H_3BO_3$ and SnO were investigated to reduce the sintering time for the LTCC application. According to the X-ray diffraction patterns, both of $0-6TiTe_3O_8-0.4MgTiO_3$ ceramic with $H_3BO_3$ and SnO had the columbite structure of $TiTe_3O_8$ Phase, the ilmenite structure of $MgTiO_3$ phase. The density and dielectric constant of the $0-6TiTe_3O_8-0.4MgTiO_3$ ceramics with $H_3BO_3$ sintered at $830^{\circ}C$ for 1 hour were decreased but the quality factor was not changed with addition of $H_3BO_3$. Also the temperature coefficient of resonant frequency was not changed hardly. In the case of addition of SnO, the density and dielectric constant were increased but the quality factor was decreased and the temperature coefficient of resonant frequency was shifted to the negative(-) direction.

• 한국광학회지
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• 제13권1호
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• pp.32-37
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• 2002

두 모드 간섭 현상을 기초로 해서 1.55 $\mu\textrm{m}$ 파장대역에서 동작하는 편광모드 분리기를 Ti: x-cut LiNbO$_3$광도파로 구조를 이용하여 설계, 제작한 다음, TE, TM 입사 모드에 따른 소자의 동작 특성을 측정하였다. 광도파로 폭, 분기각도와 간섭영역 길이를 8$\mu\textrm{m}$, 0.55$^{\circ}$, 470$\mu\textrm{m}$로 제작된 소자의 분리 비는 TE, TM 입사 모드 각각에 대해서 16.18 dB, 21.25 dB로 측정되었으며, 누화는 -16.28 dB, -21.28 dB로 측정되었다. 삽입 손실은 TE, TM 각각에 대하여 2.24 dB/cm, 2.41 dB/cm로 측정되었으며. 30 nm 파장 범위 내에서 비교적 균일한 분리 비가 관찰되었다.

• 한국광학회지
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• 제13권3호
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• pp.215-222
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• 2002

광기록매체용 Ge-Sb-Te다층박막 성장과정을 in-situ 타원계를 사용하여 실시간으로 모니터하여 각 층의 두께를 제어하고 성장된 Ge-Sb-Te 다층박막을 ex-site 분광타원법으로 확인하였다. 보호층인 ZnS-SiO$_2$와 기록층인 Ge$_2$Sb$_2$Te$_{5}$을 단결정실리콘 기층 위에 스퍼터링 방법으로 각각 성장시키면서 구한 타원상수 성장곡선을 분석하여 성장에 따르는 보호층의 균일성 및 기록 층의 밀도변화를 파악하고 이를 기초로 하여 Ge-Sb-Te광기록 다층박막의 두께를 정밀하게 제어하였다. Ge$_2$Sb$_2$Te$_{5}$ 단층박막 시료의 복소굴절율은 eX-Situ 분광타원분석을 통하여 구하였다. 제작된 다층구조는 설정된 다층구조인 ZnS-SiO$_2$(1400$\AA$)$\mid$ GST(200 $\AA$)$\mid$ZnS-SiO$_2$(200$\AA$)와 각 층의 두께 및 전체 두께에서 1.5% 이내에서 일치하는 정확도를 보여주었다.주었다.

• 한국결정성장학회지
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• 제6권2호
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• pp.220-228
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• 1996

두 개의 siliconit 발열체를 써서 이단 전기로를 제작하여 수직 Bridgman법으로 CdTe 단결정을 성장시켰다. 상단전기로의 최고온부를 $1150^{\circ}C$로 고정시키고 하단전기로를 $800^{\circ}C$로 하였을 때, $22.51150^{\circ}C$/cm의 온도 기울기를 얻었다. 성장된 시료의 X$.$선 회절 실험으로부터 얻은 격자상수 $a_0$는 6.482$\AA$이었고, 실온에서 광흡수 측정으로부터 얻은 밴드갭 에너지는 1.478eV이었다. 광발광(PL) 실험으로부터, 구속된 엑시톤 방출 피크가 각각 ($A^0$, X) (1.5902, 1.5887ev), (h,$D^o$) (1.5918 eV) 그리고 ($D^o$, X) (1.5928, 1.5932 eV)의 방출 피크로 분리되는 것을 확인할 수 있었으며, 중성주개와 중성받개의 결합에너지와 이온화에너지를 계산하였다.