• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.2
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• pp.99-103
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• 2015

One-dimensional photonic crystals (1D PCs) were fabricated by RF sputtering technique on p-Si (100), and fused quartz substrates. The 1D PCs structures consisted of $TeO_x$ (x=1.42), and $SiO_2$ with the difference refractive index. In order to estimate the effect on a defect level within 1D PCs structures, samples were prepared with both normal, and defect mode. The structural and optical properties were confirmed by Scanning electron microscope (SEM), and Ultraviolet visible near-infrared spectrophotometer (UV-VIS-NIR) respectively. In the case of a 1D PC normal mode without defect layer, it had a photonic band gap (PBG) in the near infrared (NIR) region. In the case of a 1D PC defect mode with defect layer, it had a sharp transmission band owing to a defect level, and moved towards the longer wavelength after exposing He-Cd laser with a wavelength of 325 nm.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.229-231
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• 1996

We are studied the stability of amorphous and crystalline $Te_{100-x}Ge_x$ (x=10, 15. 25, 40, 50, 60 at.%) thin films by observing the degradation in 8O%RH/$66^{\circ}C$ environment and the reflectance ratio. The degradation was observed with the transmittance and reflectance, the reflectance was measured at 780nm in the wavelength range of diode laser. In amorphous $Te_{100-x}Ge_x$ thin films of below x=4O at.%, the degradation was observed, the thin film of x=10 at.% was shown the degradation degree of 12.5%. In crystalline $Te_{100-x}Ge_x$ thin films of x=10, 40 at.%, the degradation degree were 12.8%, 13%, respectively. The reflectance ratio were shown above 20% in. all composition ratio. Therefore, we are expected that $Te_{100-x}Ge_x$ thin films of x=50, 60 at.% has the long life for the optical recording media.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1589-1591
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• 2003

The microwave dielectric properties of $TiTe_3O_8-CaF_2$ ceramics were investigated. All sample of $TiTe_3O_8-CaF_2$ ceramics were prepared by the conventional mixed oxide method, and sintered in the temperature of $730^{\circ}C{\sim}750^{\circ}C$. The structural properties of $TiTe_3O_8-CaF_2$ ceramics were investigated by the X-ray diffractor meter. According to the X-ray diffraction patterns of $TiTe_3O_8-CaF_2$ ceramics, the major phase of the cubic $TiTe_3O_8$ were presented. In the case of $1molTiTe_3O_8-0.1molCaF_2$ ceramics sintered at $740^{\circ}C$ for 5hr., the bulk density, dielectric constant, quality factor were $2.8g/cm^3$, 39.1, 36.100GHz, respectively.

• Journal of Sensor Science and Technology
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• v.10 no.1
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• pp.80-85
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• 2001

$Hg_{1-x}Cd_xTe$(MCT) thin films were grown onto ITO glass and titanium plate by stationary cathodic electrodeposition in aqueous solution contained $CdSO_4$, $TeO_2$, and $HgCl_2$. During deposition two main fabrication parameters were taken into account deposition potential and growth temperature. MCT films deposited by varying two parameters were studied by X-ray diffraction, electron probe micro analyser(EPMA) and scanning electron microscope measurements. It was shown by XRD and EPMA measurements that the structure of MCT films was zinc blonde and the composition of MCT films can be controlled with the deposition potential.

• Bulletin of the Korean Chemical Society
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• v.30 no.6
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• pp.1274-1284
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• 2009

Single crystals of fully dehydrated and fully $Ca^{2+}$-exchanged zeolites A (|$Ca_6$|[$Si_{12}Al_{12}O_{48}$]-LTA) and X (|$Ca_{46}$| [$Si_{100}Al_{92}O_{384}$]-FAU) were brought into contact with Te in fine pyrex capillaries at 623 K and 673 K, respectively, for 5 days. Crystal structures of Te-sorbed $Ca^{2+}$-exchanged zeolites A and X have been determined by single-crystal X-ray diffraction techniques at 294 K in the cubic space group Pm$\overline{3}$ m (a = 12.288(2) $\AA$) and Fd $\overline{3}$ (a = 25.012(1) $\AA$), respectively. The crystal structures of pale red-brown |$Ca_6Te_3$|[$Si_{12}Al_{12}O_{48}$]-LTA and black coloured |$Ca_{46}Te_8$| [$Si_{100}Al_{92}O_{384}$]-FAU have been refined to the final error indices of $R_1/wR_2\;=\;0.1096/0.2768\;and\;R_1/wR_2$ = 0.1054/ 0.2979 with 204 and 282 reflections for which $F_o\;>\;4{\sigma}(F_o)$, respectively. In the structure of |Ca6Te3|[$Si_{12}Al_{12}O_{48}$]- LTA, 6 $Ca^{2+}$ ions per unit cell were found at one crystallographic positions, on 3-fold axes equipoints of opposite 6-rings. In |$Ca_{46}Te_8$|[$Si_{100}Al_{92}O_{384}$]-FAU, 46 $Ca^{2+}$ ions per unit cell were found at four crystallographically distinct positions: 3 $Ca^{2+}$ ions at Ca(1) fill the 16 equivalent positions of site I, 21 $Ca^{2+}$ ions at Ca(2) fill the 32 equivalent positions of site I’, 10 and 12 $Ca^{2+}$ ions at Ca(3) and Ca(4), respectively, fill the 32 equivalent positions of site II. The Te clusters are stabilized by interaction with cations and framework oxygen. In sodalite units, Te-Te distances of 2.86(10) and 2.69(4) $\AA$ in zeolites A and X, respectively exhibited strong covalent properties due to their interaction with $Ca^{2+}$ ions. On the other hand, in large cavity and supercage, those of 2.99(3) and 2.76(11) $\AA$ in zeolites A and X, respectively, showed ionic properties because alternative ionic interaction was formed through framework oxygen at one end and $Ca^{2+}$ cations at the other end.

• Korean Journal of Materials Research
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• v.30 no.1
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• pp.1-7
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• 2020

Doping or incorporation with exotic elements are two manners to regulate the optoelectronic properties of transparent conducting (TCO) cadmium oxide (CdO). Nevertheless, the method of doping host CdO by CdTe semiconductor is of high importance. The structural, optical, and electrical properties of CdTe-doped CdO films are studied for the sake of promoting their conducting parameters (CPs), including their conductivity, carrier concentration, and carrier mobility, along with transparency in the NIR spectral region; these are then compared with the influence of doping the host CdO by pure Te ions. X-ray fluorescence (XRF), X-ray diffraction (XRD), optical absorption spectroscopy, and electrical measurements are used to characterise the deposited films prepared by thermal evaporation. Numerous results are presented and discussed in this work; among these results, the optical properties are studied through a merging of concurrent BGN (redshift) and BGW (blue shift) effects as a consequence of doping processes. The impact of hydrogenation on the characterisations of the prepared films is investigated; it has no qualitative effect on the crystalline structure. However, it is found that TCO-CPs are improved by the process of CdTe doping followed by hydrogenation. The utmost TCO-CP improvements are found with host CdO film including ~ 1 %Te, in which the resistivity decreases by ~ 750 %, carrier concentration increases by 355 %, and mobility increases by ~ 90 % due to the increase of N_carr. The improvement of TCO-CPs by hydrogenation is attributed to the creation of O-vacancies because of H₂ molecule dissociation in the presence of Te ions. These results reflect the potential of using semiconductor CdTe -doped CdO thin films in TCO applications. Nevertheless, improvements of the host CdO CPs with CdTe dopant are of a lesser degree compared with the case of doping the host CdO with pure Te ions.

• Korean Journal of Materials Research
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• v.18 no.11
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• pp.617-622
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• 2008

In this study, the additivity factors of compositions to density and glass transition point ($T_g$) in a $xLi_2O-(1-x)[(1-y)TeO_2-yZnO]$ (0$T_g$ was discussed. As a method for predicting the relation between glass structure and ionic conductivity, density was measured by the Archimedes method. The glass transition point was analyzed to predict the relation between ionic conductivity and the bonding energy between alkali ions and non-bridge oxygen (NBO). The relation equations showing the additivity factor of each composition to the two properties are as follows: Density(g/$cm^3$) = $2.441x_1\;＋\;5.559x_2\;＋\;4.863x_3\;T_g(^{\circ}C)$ = $319x_1\;＋\;247x_2\;＋\;609x_3\;－\;1950x_1x_3$ ($x_1$ : fraction of $Li_2O$, $x_2$ : fraction of $TeO_2$, $x_3$ : fraction of ZnO) The density decreased as $Li_2O$ content increased. This was attributed to change of the $TeO_2$ structure. From this structural result, the electric conductivity of the glass samples was predicted following the ionic conduction mechanism. Finally, it is expected that electric conductivity will increase as the activation energy for ion movement decreases.

• Electrical & Electronic Materials
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• v.9 no.7
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• pp.652-659
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• 1996

Sintering characteristics and electrical properties of xPb(Mg$_{1}$8/Te$_{1}$8/Mn$_{1}$4/Nb$_{1}$2/) $O_{3}$-(1-x) Pb (Zr$_{1}$2/ $Ti_{1}$2/) $O_{3}$ (x=0.075, 0.1, 0.125) ceramics are investigated. A sintering temperature of ceramics could be reduced to 950.deg. C by a reaction between PbO and B site compound material. The physical properties of 0.1Pb(Mg, Te, Mn, Nb) $O_{3}$ - 0.9Pb(Zr, Ti) $O_{3}$ bulk ceramic with 3wt% glass frit(0.857PbO-0.143W $O_{3}$) were following : den = 7.95 g/cm$^{3}$, T$_{c}$=340.deg. C, .epsilon.$_{33}$= 754, k$_{31}$=0.3 and Q.=1780. The 3-layer piezoelectric transformer by using a tape casting method showed a good monolithic structure, and its voltage setup ratio was 2.5 times higher than that of a single device by using bulk ceramics.s.s.

• Electrical & Electronic Materials
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• v.10 no.1
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• pp.39-44
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• 1997

Bulk type radiation detector of Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure using Cd$_{1-x}$ Zn$_{x}$Te(x=20%) wafer(3x4xl mm$^{3}$) grown by high pressure Bridgman method has been developed. We etched wafer surfaces with 2% Br-methanol solution and coated gold thin film on the surfaces by electroless deposition method for 5 min. in 49/o HAuCI$_{3}$ 4H20 solution. Initial etch rates of Cd, Zn and Te were 46%, 12% and 42% respectively. After etched, the surface of wafer was slightly revealed to Te rich condition. The leakage current was increased with etch time, but it didn't exceed 3nA at 50volt. The thickness of Au film was about 100nm by Rutherford Backscattering Spectroscopy(RBS). The resolution were 6.7% for 22.1 keV photon from 109 $^{109}$ Cd and 8.2% for 59.5 keV photon from $^{241}$ Am. The radiation detector such as Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure was more effective to monitor the low energy gamma radiation.iation.

• Korean Journal of Materials Research
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• v.9 no.8
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• pp.854-857
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• 1999

The properties of Fe-Se-Te system(FeSe(sub)1-xTe(sub)x, x=0.2, 0.5, 0.8) have been studied by means of the X-ray diffraction method and Mossbauer spectroscopy. The results of X-ray diffraction patterns show that three samples have the ixed structure of tetragonal PbO and a small amount of hexagonal NiAs structure respectively. For x=0.5 the lattice parameters of tetragonal PbO structure are a=3.795$\AA$, c=5.896$\AA$ and c/a=1.55. The Mossbauer spectra were obtained with the various temperature variation and than they do not exhibit magnetic hyperfine structure but show a strong doublet. The values of observed isomer shift and quadrupole splitting suggest that the irons of all samples exist in the +2 oxidation state with a major covalent contribution. The temperature dependence of isomer shift values for x=0.8 seems to be originated from the second order Doppler effect.