• Progress in Superconductivity
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• v.2 no.1
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• pp.27-32
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• 2000

A prototype for a highly sensitive, automated measurement system for the microwave surface resistance of high-$T_c$ superconductor films was set up, and tested by measuring the microwave surface resistances of high-$T_c$ $YBa_2Cu_3O_{7-\delta}$ (YBCO) films at the frequency of about 19.6 GHz and the temperature of 30 K $\sim$ 90 K. An open-ended $TE_{011}$ mode sapphire-loaded cylindrical cavity resonator was used as the measurement probe, where YBCO films were used as the endplates of the cylindrical cavity. The characteristics of the measurement system include functions to display the unloaded Q and the resonant frequency of the $TE_{011}$ mode resonator as well as the microwave surface resistance of the YBCO films, all simultaneously as a function of temperature. Applicability of the measurement system for investigating the homogeneity in the microwave properties of large high-$T_c$ superconductor films is discussed.

• Current Applied Physics
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• v.18 no.12
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• pp.1513-1522
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• 2018

Bismuth telluride ($Bi_2Te_3$) thin films were prepared with various electrolyte temperatures ($10^{\circ}C-70^{\circ}C$) and concentrations [$Bi(NO_3)_3$ and $TeO_2:1.25-5.0mM$] in this study. The surface morphologies differed significantly between the experiments in which these two electrodeposition conditions were separately adjusted even though the applied current density was in the same range in both cases. At higher electrolyte temperatures, a dendrite crystal structure appeared on the film surface. However, the surface morphology did not change significantly as the electrolyte concentration increased. The dendrite crystal structure formation in the former case may have been caused by the diffusion lengths of the ions increasing with increasing electrolyte temperature. In such a state, the reactive points primarily occur at the tops of spiked areas, leading to dendrite crystal structure formation. In addition, the in-plane thermoelectric properties of $Bi_2Te_3$ thin films were measured at approximately 300 K. The power factor decreased drastically as the electrolyte temperature increased because of the decrease in electrical conductivity due to the dendrite crystal structure. However, the power factor did not strongly depend on the electrolyte concentration. The highest power factor [$1.08{\mu}W/(cm{\cdot}K^2$)] was obtained at 3.75 mM. Therefore, to produce electrodeposited $Bi_2Te_3$ films with improved thermoelectric performances and relatively high deposition rates, the electrolyte temperature should be relatively low ($30^{\circ}C$) and the electrolyte concentration should be set at 3.75 mM.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.128-128
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• 2010

중적외선 영역은 장애물에 의해서 파장의 흡수가 거의 일어나지 않기 때문에 적외선 소자에서 널리 이용되고 있다. 현재 대부분의 중적외선 소자에는 HgCdTe (MCT)가 사용되고 있지만, 3성분계 화합물이 가지는 여러 문제를 가지고 있다. 반면에, 2성분계 화합물인 인듐안티모나이드 (InSb)는 중적외선 영역 ($3-5\;{\mu}m$) 파장 대에서 HgCdTe와 대등한 소자 특성을 나타냄과 동시에 낮은 기판 가격, 소자 제작의 용이성, 그리고 야전과 우주 공간에서 소자 동작의 안정성 때문에 HgCdTe를 대체할 물질로 주목을 받고 있다. InSb는 미국과 이스라엘과 같은 일부 선진국을 중심으로 연구가 되었지만, 국방 분야의 중요한 소자로 인식되었기 때문에 소자 제작에 관한 기술적인 내용은 국내에 많이 알려지지 않은 상태이다. 따라서 본 연구에서는 InSb 소자 제작의 기초연구로 절연막과 pn 접합 형성에 대한 연구를 수행하였다. 절연막의 특성을 알아보기 위해, InSb 기판위에 $SiO_2$와 $Si_3N_4$를 PECVD (Plasma Enhanced Chemical Vapor Deposition)로 증착을 하였다. 절연막의 계면 트랩 밀도는 77K에서 C-V (Capacitance-Voltage) 분석을 통하여 계산하였으며, Terman method 방법을 이용하였다.[1] $SiO_2$는 $120-200^{\circ}C$의 온도 영역에서 계면 트랩 밀도가 $4-5\;{\times}\;10^{11}cm^{-2}$범위를 가진 반면, $240^{\circ}C$의 경우 계면 트랩 밀도가 $21\;{\times}\;10^{11}cm^{-2}$로 크게 증가하였다. $Si_3N_4$는 $SiO_2$ 절연막에 비해서 3배 정도의 높은 계면 트랩 밀도 값을 나타내었으며. Remote PECVD 장비를 이용하여 $Si_3N_4$ 절연막에 관한 연구를 추가적으로 진행하여 $7-9\;{\times}\;10^{11}cm^{-2}$ 정도의 계면 트랩 밀도 값을 구할 수가 있었다. 따라서 InSb에 대한 절연막은 $200^{\circ}C$ 이하에서 증착된 $SiO_2$와 Remote PECVD로 증착 된 $Si_3N_4$가 적합하다고 할 수 있다. 절연막 연구와 더불어 InSb 소자의 pn 접합 연구를 진행하였다. n-InSb (100) 기판 ($n\;=\;0.2-0.85\;{\times}\;10^{15}cm^{-3}$ @77K)에 $Be^+$이온 주입하여 p층을 형성하여 제작 되었으며, 열처리 조건에 따른 소자의 특성을 관찰 하였다. $450^{\circ}C$에서 30초 동안 RTA (Rapid Thermal Annealing)공정을 진행한 샘플은 -0.1 V에서 $50\;{\mu}A$의 높은 암전류가 관찰되었으며, 열처리 조건을 60, 120, 180초로 변화하면서 소자의 특성 변화를 관찰하였다.

• Proceedings of the Membrane Society of Korea Conference
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• 1997.10a
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• pp.51-52
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• 1997

1. 서론 : 폴리이미드는 우수한 기계적 강도와 열적, 화학적 안정성으로 인해 최근 막분리 재료로 많이 연구 검토되고 있다. 대부분의 폴리이미드는 비교적 높은 선택도를 가지고 있으나 투과계수가 떨어지는 단점을 지니고 있어소 이를 극복하기 위한 많은 연구가 진행되어 왔다. 그 결과 투과계수를 크게 증가시킨 폴리이미드를 함성하였으나 선택도는 감소하여 투과특성의 상위한계를 넘지는 못하였다. 이 한계를 극복하기 의해서 복합잴를 이용하거나 UV, 플라즈마 처리에 의한 고분자막의 수식 등 많은 방법들이 연구되고 있다. 본 연구는 NaX형 제올라이트를 폴리이미드에 혼화시킨 막으로 산소/질소의 분리투과특성의 개선을 시도하였으며, NaX형 제올라이트와 폴리이미드 혼화방법, 혼화비율 등이 기체투과특성에 미치는 영향을 고찰하였다. 본 실험에 사용된 NaX형 제올라이트는 직접 합성하여 사용하였다. 폴리이미드는 2,3,5,6-Tetramethyl-1,4-phenylenediamine(p-TeMPD)과 (3,3,4,4'-dicarboxyphenyl)-hexafluoropropene-dianhydride(6FDA)로 합성한 6FDA-p-TeMPD 폴리이미드를 사용하였고, 그 투과계수는 122Barrer, 선택도$\alpha$$_{N_2/O_2}$ = 3.4이다.

• Nuclear Engineering and Technology
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• v.53 no.4
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• pp.1323-1330
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• 2021

This work reported the radiation shielding characteristic of the bismuth titanium vanadium sodium tellurite glass system. The density of the specially-developed glass samples was increased from 2.21 to 4.01 g/cm³ with the addition of Bi₂O₃, despite the fact the molar volume is decease within 85.43-54.79 cm³/mol. The WinXcom program was used to approximate the effect of Bi₂O₃ on the gamma radiation shielding parameters of bismuth titanium vanadium sodium tellurite glasses. The ㎛ values decrease with the increase of Bi₂O₃ concentration. The computed data shows that the glass sample with 20 mol.% of Bi₂O₃ content has the greatest radiation attenuation performance in comparison to other selected glasses. The Bi₂O₃-TiO₂-V₂O₅-Na₂O-TeO₂ glass system shows excellent neutron shielding material with high long-term light transmittance and discharge resistance and could be potentially used as transparent radiation-resistant shielding glass applications.

• Applied Chemistry for Engineering
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• v.1 no.1
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• pp.83-90
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• 1990

The semiconducting $(Pb_1\;_xSn_x)_1$ $_yTe_y$, one of the low - temperature thermoelectric materials, has been prepared and its chemical composition and nonstoichiometry has been analyzed. The content of Pb in the specimens was determined by the complexometric back - titration method with EDTA and Pb(II) standard solutions. Te - content was analyzed with the redox titration method. The electrical conductivity and the thermoelectric power have also been measured by the DC 4 - probe and the heat-pulse technique, respectively. All of the specimens showed a nonstoichiometric behavior in their chemical compositions (Te excess), thus gave rise to a p - type semiconducting property, and the nonstoichoimetry became bigger as the Sn - content increased. The thermoelectric power vs. temperature results have been analyzed upon the basis of the Fermi level vs. temperature profiles in the saturation regime. The specimen of x=0.1 evolved a transition from p - to n - type property at about 670K, which has been explained by the fact that the mobility of electrons is bigger than that of holes in the temperature range of the intrinsic regime.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.173-178
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• 2000

A prototype for a highly sensitive, automated measurement system for the microwave surface resistance of high-T$_c$ superconductor films was set up, and tested by measuring the microwave surface resistances of high-T$_c$ YBa$_2$Cu$_3$O$_{7-{\delta}}$(YBCO) films at the frequency of about 19.6 GHz and the temperature of 30 K ${\sim}$ 90 K. An open-ended TE$_{011}$ mode sapphire-loaded cylindrical cavity resonator was used as the measurement probe, where YBCO films were used as the endplates of the cylindrical cavity. The characteristics of the measurement system include functions to display the unloaded ${\varrho}$ and the resonant frequency of the TE$_{011}$ mode resonator as well as the microwave surface resistance of the YBCO films, all simultaneously as a function of temperature. Applicability of the measurement system for investigating the homogeneity in the microwave properties of large high-T$_c$ superconductor films is discussed.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.5
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• pp.1055-1063
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• 2013

CTL cell that is one of the standard electromagnetic generation equipment can measure the characteristic of the electromagnetic susceptibility and the electromagnetic interference. In case of being input the same magnitude signal with the phase difference of 0o or the phase difference of 180o at two input ports of CTL cell to be the fundamental resonant frequency(TE011) of 2.20GHz, the characteristics of the electric field and the magnetic field at the uniform area were measured. And, it measured the electric field characteristic due to the variation of the input power, the test position and the input frequency under the dominant E-field and the dominant H-field of CTL cell. Using these mesuremed data, it examined the operation characteristic and the available frequency band of CTL cell.

• Korean Journal of Materials Research
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• v.27 no.7
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• pp.364-368
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• 2017

We performed temperature dependent current-voltage (I-V) measurements to characterize the electrical properties of $Au/Al_2O_3/n-Ge$ metal-insulator-semiconductor (MIS) diodes prepared with and without $H_2O$ prepulse treatment by atomic layer deposition (ALD). By considering the thickness of the $Al_2O_3$ interlayer, the barrier height for the treated sample was found to be 0.61 eV, similar to those of Au/n-Ge Schottky diodes. The thermionic emission (TE) model with barrier inhomogeneity explained the final state of the treated sample well. Compared to the untreated sample, the treated sample was found to have improved diode characteristics for both forward and reverse bias conditions. These results were associated with the reduction of charge trapping and interface states near the $Ge/Al_2O_3$ interface.

• Economic and Environmental Geology
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• v.32 no.4
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• pp.323-337
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• 1999

Late Cretaceous to early Tertiary volcanic rocks in the Kyongsang basin exhibit high-K calc-alkaline characteristics, and originated from the magmatism related genetically to subduction of Kula-Pacific plate. They represent HFSE depletion and LlLE enrichment characteristics as shown by magmas related to subduction. Early studies on the depth of magma generation has been estimated as 180-230 km based on K-h relation should be reevaluated, because the depth of peridotite partial melting with 0.4 wt. % water is 80-120 km at subduction zone, and subducting slab in premature arc can melted even lower than 70 km. Moreover the increase of potassium contents depends on either contamination of crustal material and fluids of subducting slab or low degree of partial melting. If the inclination of subduction zone is 30 degrees and the depth to the Benioff zone is 180-230 km, the calculated distance between the volcanic zone and trench axis would be 310-400 km. It is unlikely because the distance between the Kyongsang basin and trench during late Cretaceous to early Tertiary is closer than this value and not comparable with generally-accepted models in subduction zone magmatism. $K_{55}$ of the volcanics in the Kyongsang basin is 0.3-2.3 wt.% and the average indicate that the depth ranges between 80-170 km on the diagram of Marsh, Carmichael (1974). Fractionation from garnet lherzolite, assumed the depth of 180-230km, is not consistent with the REE patterns of the volcanoes in the Kyongsang basin. Futhermore, the range of depth suggested by many workers, who studied magmatism related to subduction, imply shallower than this depth. Crustal thickness calculated by the content of CaO and $Na_2O$ is about 30 km and about 35 km, respectively. Paleo-crustal thickness during late Cretaceous to early Tertiary times in the Kyongsang basin inferred about 30 km calculated by La/Sm versus LaJYb data, which is also supported by many previous studies.