• Journal of Advanced Marine Engineering and Technology
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• v.29 no.6
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• pp.707-712
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• 2005

PRAM (Phase change random access memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change materials have been researched in the field of optical data storage media. Among the phase change materials. $Ge_2Sb_2Te_5$ is very well known for its high optical contrast in the state of amorphous and crystalline. However the characteristics required in solid state memory are quite different from optical ones. In this study. the structural Properties of GeSbTe thin films with composition were investigated for PRAM. The 100-nm thick $Ge_2Sb_2Te_5$ and $Sb_2Te_3$ films were deposited on $SiO_2/Si$ substrates by RF sputtering system. In order to characterize the crystal structure and morphology of these films. x-ray diffraction (XRD). atomic force microscopy (AFM), differential scanning calorimetry (DSC) and 4-point measurement analysis were performed. XRD and DSC analysis result of GST thin films indicated that the crystallization of $Se_2Sb_2Te_5$ films start at about $180^{\circ}C$ and $Sb_2Te_3$ films Start at about $125^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.203-204
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• 2005

PRAM (Phase change Random Access Memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change material has been researched in the field of optical data storage media. Among the phase change materials $Ge_2Sb_2Te_5$(GST) is very well known for its high optical contrast in the state of amorphous and crystalline. However, the characteristics required in solid state memory are quite different from optical ones. In this study, the structural properties of GST thin films with composition were investigated for PRAM. The 100-nm thick GeTe and $Sb_2Te_3$ films were deposited on $SiO_2$/Si substrates by RF sputtering system. In order to characterize the crystal structure and morphology of these films, we performed x-ray diffraction (XRD) and atomic force microscopy (AFM).

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.7 no.2
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• pp.93-100
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• 2009

This study has been carried out to look into the characteristics of an oxidative-dissolution of fission products (FP) co-dissolved with uranium (U) in a $(NH_4)_2CO_3$ carbonate solution. Simulated FP-oxides which contained 12 components have been added to the solution to examine their dissolution characteristics. It is found that $H_2O_2$ is an effective oxidant to minimize the oxidative-dissolution of FP. In the 0.5 M $(NH_4)_2CO_3$-0.5 M $H_2O_2$ solution, some elements such as Re, Te, Cs and Mo seem to be dissolved together with U, while 98${\pm}$2% for Re and Te, 94${\pm}$2% for Cs, and 29${\pm}$2 % for Mo are dissolved for 2 hours. It is revealed that dissolution rates of Re, Te and Cs are high (completely dissolved within 10${\sim}$20 minutes) due to their high solubility in the $(NH_4)_2CO_3$ solution regardless of the addition of $H_2O_2$, and independent of the concentrations of $Na_2CO_3$ and $H_2O_2$. However, the dissolution ratio of Mo seems to be slightly increased with time and about 33 % for 4 hours, indicating a very slow dissolution rate and also independent of the $(NH_4)_2CO_3$ concentration. It is found that the most important factor for the oxidative-dissolution of FP is the pH of the solution and an effective dissolution is achieved at a pH between 9${\sim}$10 in order to minimize the dissolution of FP.

• Electrical & Electronic Materials
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• v.10 no.1
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• pp.39-44
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• 1997

Bulk type radiation detector of Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure using Cd$_{1-x}$ Zn$_{x}$Te(x=20%) wafer(3x4xl mm$^{3}$) grown by high pressure Bridgman method has been developed. We etched wafer surfaces with 2% Br-methanol solution and coated gold thin film on the surfaces by electroless deposition method for 5 min. in 49/o HAuCI$_{3}$ 4H20 solution. Initial etch rates of Cd, Zn and Te were 46%, 12% and 42% respectively. After etched, the surface of wafer was slightly revealed to Te rich condition. The leakage current was increased with etch time, but it didn't exceed 3nA at 50volt. The thickness of Au film was about 100nm by Rutherford Backscattering Spectroscopy(RBS). The resolution were 6.7% for 22.1 keV photon from 109 $^{109}$ Cd and 8.2% for 59.5 keV photon from $^{241}$ Am. The radiation detector such as Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure was more effective to monitor the low energy gamma radiation.iation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1991.10a
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• pp.17-19
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• 1991

Pastes consisting of $CdZnS_{1-y}Te_{y}$ powder, 20wt/o of $CdCl_2$as a sintering aid and appropriate amount of Propylene Glycol(P.G) have been coated on glass substrates and were sintered at the temperature of $625^{\circ}C$ to find energy band gap, transmittance and electrical properties of the sintered films. The resistivity of sintered film increases with increasing Te content. X-ray diffraction patterns show that $CdZnS_{0.9}Te_{0.1}$ sintered film is in the single film in the two phase region. The transmittance of the sintered film decreases with increasing the Te content.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.115-115
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• 2007

PRAM (Phase Change Random Access Memory)은 상변화 물질의 비저항 차이를 이용한 메모리 소자로 차세대 비휘발성 메모리로 주목받고 있다. 현재 상변화 물질로 사용되고 있는 $Ge_2Sb_2Te_5$ 박막은 결정질 상태에서 저항이 낮아 RESET 동작에서 많은 전력이 소비되고 메모리의 고집적의 어려움이 있다. 이러한 문제를 해결하기 위해 상변화 물질의 개선과 소자 구조의 개선 등의 새로운 접근이 시도되고 있다. 본 연구에서는 $Ge_2Sb_2Te_5$ 박막의 전기적 특성을 개선하기 위해서 이종 원소인 질소를 첨가한 N-doped $Ge_2Sb_2Te_5$ 박막에 대한 특성을 살펴 보았다. $SiO_2$/Si 기판 위에 100 nm 두께의 박막을 D.C. magnetron sputter 방법으로 증착하여, 질소 분위기 $100^{\circ}C{\sim}300^{\circ}C$온도 구간에서 열처리하였다. 열처리에 따른 박막 특성을 관찰하기 위해 면저항 측정, XRD, TEM 분석을 통해 박막 특성을 관찰하였다. 면저항 측정과 XRD peak 분석을 통해 $Ge_2Sb_2Te_5$ 시스템에 비하여 N-doped $Ge_2Sb_2Te_5$ 시스템의 결정화 온도가 상승하였음을 확인하였다. 면저항은 첨가된 질소의 조성이 증가할수록 증가하였고, FCC 상에서 HCP 상으로의 상변화 온도 역시 증가하였다. 첨가된 질소가 $Ge_2Sb_2Te_5$, 박막의 결정 성장을 억제하였고, 상대적으로 높은 저항을 가지고 안정한 FCC상을 고온 열처리 이후에도 유지하였다. 질소 첨가를 이용한 상변화 물질의 열안정성 향상과 저소비전력 구동을 통해 향후 고집적 상변화 메모리에의 적용이 가능하다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.52-52
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• 2018

Only approximately 30% of fossil fuel energy is used; therefore, it is desirable to utilize the huge amounts of waste energy. Thermoelectric (TE) materials that convert heat into electrical power are a promising energy technology. The TE materials can be formed either as thin films or as bulk semiconductors. Generally, thin-film TE materials have low energy conversion rates due to their thinness compared to that in bulk. However, an advantage of a thin-film TE material is that the efficiency can be smartly engineered by controlling the nanostructure and composition. Especially nanostructured TE thin films are useful for mitigating heating problems in highly integrated microelectronic devices by accurately controlling the temperature. Hence, there is a rising interest in thin-film TE devices. These devices have been extensively investigated. It is demonstrated that transparent amorphous oxide semiconductors (TAOS) can be excellent thermoelectric (TE) materials, since their thermal conductivity (${\kappa}$) through a randomly disordered structure is quite low, while their electrical conductivity and carrier mobility (${\mu}$) are high, compared to crystalline semiconductors through the first-principles calculations and the various measurements for the amorphous In-Zn-O (a-IZO) thin film. The calculated phonon dispersion in a-IZO shows non-linear phonon instability, which can prevent the transport of phonon. The a-IZO was measured to have poor ${\kappa}$ and high electrical conductivity compared to crystalline $In_2O_3:Sn$ (c-ITO). These properties show that the TAOS can be an excellent thin-film transparent TE material. It is suggested that the TAOS can be employed to mitigate the heating problem in the transparent display devices.

• Bulletin of the Korean Chemical Society
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• v.33 no.5
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• pp.1608-1612
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• 2012

Singlet oxygen ($^1O_2$) is an important species for oxidation in biological processes. $^1O_2$ is implicated in the genotoxic effect, and plays an important role in the cell-signaling cascade and in the induction of gene expression. However, the rapid detection of $^1O_2$ in biological environments with sufficient specificity and sensitivity is hampered by its extremely low emission probability. Here, a layer-by-layer (LbL) film of CdTe quantum dots (QDs), polymers, and ascorbate have been designed as a rapid, highly selective, and sensitive fluorescence probe for $^1O_2$ detection. Upon reaction with $^1O_2$, the probe exhibits a strong photoluminescence (PL) response even at trace levels. This remarkable PL change should enable the probe to be used for $^1O_2$ detection in many chemical and biological systems and as an environmental sensor.

• Journal of the Korean Chemical Society
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• v.34 no.1
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• pp.10-18
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• 1990

Solvolyses of p-substituted benzyl bromides have been studied in dimethylsulfoxide-water and N,N-dimethylformamide-water mixtures by kinetic method. To determine the ionizing power, Y and the nucleophilicity, $N_{BS}$, the solvolyses of 1-adamantyl halides, t-butyl halides, and methyl tosylate in the same solvent mixtures have been investigated. The solvatochromic parameters for each dimethylsulfoxide-water mixtures have been determined by substituting into the Taft's linear solvatochromic energy relationships with measured $ν_{max}$. The solvolyses of p-substituted benzyl bromides have been found to proceed by borderline mechanism in which bond formation is more advanced than bond cleavage in the transition state based on the m, l values and ${\beta},{\rho}_s$, values.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.292-292
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• 2011

TFT (Thin Film Transistor)에서 공정을 단순화 시키고, 가격을 하락시키기 위해서는 Poly-Si을 대체할 물질이 필요하다. 이 연구에서는 Chalcogenide Material의 하나인 GeTe 박막을 이용하여 TFT Channel으로 사용 가능한 물질인지 알아보기 위하여 Post-Annealing을 한 뒤, 상 변화에 따른 박막의 저항 변화, Carrier Concentration (cm-3)과 Mobility (cm2V-1s-1)의 변화를 알아보았다. Sputtering을 이용하여 증착한 GeTe 100 nm Thin Film 위에 Sputtering을 이용하여 SiO2 5 nm를 Capping Layer로 증착한 후, Post-Annealing을 200$^{\circ}C$, 300$^{\circ}C$, 400$^{\circ}C$, 500$^{\circ}C$로 온도를 변화 시키며 진행하였고, 이로 인하여 GeTe Thin Film에 외부의 영향을 최소화 하였다. 먼저 GeTe Thin Film의 Sheet Resistance를 측정한 결과는 300$^{\circ}C$ 까지 낮은 Sheet Resistance의 거동을 보이며 반면, 400$^{\circ}C$ 이상이 되면 높은 Sheet Resistance의 거동을 보인다. Hall Measurement를 통해, Carrier Concentration과 Mobility를 알아보았다. Carrier Concentration은 온도가 증가하면 1E+19에서 1E+21 까지 증가하며, Mobility는 감소하는 경향을 보인다. 500$^{\circ}C$ Post-Annealed GeTe Thin Film에서는 Resistivity가 상당히 높아 4 Point Probe (Range : 1 mohm/sq~2 Mohm/sq)로 측정이 불가능하다. XRD로 GeTe Thin Film을 분석한 결과 as-grown, 200$^{\circ}C$, 300$^{\circ}C$에서는 Cubic의 결정 구조를 보이며, Sheet Resistance가 급격히 증가한 400$^{\circ}C$, 500$^{\circ}C$에서는 Rhombohedral의 결정구조를 보인다. GeTe Thin Film은 400$^{\circ}C$ 이상의 Post-Annealing 온도에서 cubic 구조에서 Rhombohedral 구조로 상 변화가 일어난다. 위 결과를 통해, 결정 구조의 변화가 GeTe Thin Film의 저항, Carrier Concentration과 Mobility에 밀접한 영향이 미치는 것을 확인하였다.