• 한국식품영양과학회지
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• 제27권4호
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• pp.745-750
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• 1998

The antimutagenic and antigenotoxic effects of ethanol, methanol, water and non-heating ethanol extract of Ligularia fischeri were investigated using Ames test and micronucleus test. Four solvent extracts by themseleves did not induce mutagenesis. The four extract of 200㎍/plate showed approximately 84.7%, 77.1%, 72.5% and 71% inhibitory effect on the mutagenesis induced by N-methyl-N'-nitro-N-nitrosoguanidine(MNNG) and 67.9%, 66.8%, 64.6% and 56% inhibition on the mutagenesis by 4-nitroquinoline-1-oxide(4NQO) against TA100 strain, whereas 70.2%, 60.9%, 61.9% and 52.8% inhibitions were observed on the mutagenesis induced by 3-amino-1,4-dimethyl-5H-pyrido[4,3-b]indol(Trp-P-1) in the presence of 200㎍/plate. TA100 strain was more sensitive than TA98 strain by four kinds of extracts on antimutagenesis. The effects of Ligularia fischeri extracts on the frequencies of micronucleated poly chromatic erythrocytes(MNPECs) induced by MNNG were investigated in the bone marrow. Ten, 20, 40 and 80mg g/kg of each extract were administered to animals immediately after injection of MNNG and the exposure time was 36 hours. Inhibitory effects of Ligularia fischeri ethanol extracts were 12%, 35.3%, 58.8%, and 57%, in the presence of 20, 40, 60 and 80mg/kg, respectively whereas methanol extracts showed 15.5%, 32.7%, 50.8%, and 57.9% inhibitory effects, respectively. Both extracts showed enhanced antimutagenic and antigenotoxic effects. These results showed a good correlation between antimutagenic effects in in vitro and in in vitro assay.

• Journal of Microbiology and Biotechnology
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• 제17권5호
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• pp.721-727
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• 2007

Stability-enhanced mutants, H44, 11-94, 5A2-84, and F8, of L-threonine aldolase(L-TA) from Streptomyces coelicolor A3(2)(SCO1085) were isolated by an error-prone PCR followed by a high-throughput screening. Each of these mutant, had a single amino acid substitution: H177Y in the H44 mutant, A169T in the 11-94 mutant, D104N in the 5A2-84 mutant and F18I in the F8 mutant. The residual L-TA activity of the wild-type L-TA after a heat treatment for 20 min at $60^{\circ}C$ was only 10.6%. However, those in the stability-enhanced mutants were 85.7% for the H44 mutant, 58.6% for the F8 mutant, 62.1% for the 5A2-84 mutant, and 67.6% for the 11-94 mutant. Although the half-life of the wild-type L-TA at $63^{\circ}C$ was 1.3 min, those of the mutant L-TAs were longer: 14.6 min for the H44 mutant, 3.7 min for the 11-94 mutant, 5.8 min for the 5A2-84 mutant, and 5.0 min for the F8 mutant. The specific activity did not change in most of the mutants, but it was decreased by 45% in the case of mutant F8. When the aldol condensation of glycine and 3,4-dihydroxybenzaldehyde was studied by using whole cells of Escherichia coli containing the wild-type L-TA gene, L-threo-3,4-dihydroxyphenylserine(L-threo-DOPS) was successfully synthesized with a yield of 2.0 mg/ml after 20 repeated batch reactions for 100 h. However, the L-threo-DOPS synthesizing activity of the enzyme decreased with increased cycles of the batch reactions. Compared with the wild-type L-TA, H44 L-TA kept its L-threo-DOPS synthesizing activity almost constant during the 20 repeated batch reactions for 100 h, yielding 4.0 mg/ml of L-threo-DOPS. This result showed that H44 L-TA is more effective than the wild-type L-TA for the mass production of L-threo-DOPS.

• Bulletin of the Korean Chemical Society
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• 제16권9호
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• pp.819-823
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• 1995

Thin films of two kinds of Prussian Blue (PB)-modified, using iron(Ⅲ) complex instead of conventional FeCl3, were prepared on a gold substrate and these films were able to be electrochemically reduced in potassium nitrate solution. In case of PB-modified films prepared from Fe(Ⅲ)-ethylenediamine-N,N'-diacetic acid (FeEN3+)/K3Fe(CN)6 solution, the mid-peak potential was 0.156 V in 0.1 M KNO3 and it was found that potassium ion migrates into or out of the film during the electrolysis. These films were shown to be electrochromic. These films exhibited smaller peak separation than those formed from Fe(Ⅲ)-tartaric acid (FeTA3+)/K3Fe(CN)6 system. The diffusion coefficient of Fe(CN)63-/4- redox couple, evaluated using the fabricated Au rotating disc electrode(rde) previously reported, was in good agreement with the existing data. Two experimental procedures, including the voltammetry at relatively low scan rates and the rde study, have been used in order to characterize the electrode kinetics. The electrode kinetics of some redox couples (FeEN2+-FeEN3+ and FeTA2+-FeTA3+) on both PB-modified thin films and bare Au electrode were studied using a Au rde. In all cases the rate constants of electron transfer obtained with the PB-modified film electrodes were only slightly less than those obtained for the same reaction on bare Au disc electrodes. The conductivities, as determined from the slopes of the i-V curves for a ca. 1 mm sample for dried PB-modified potassium-rich and deficient bulk samples pressed between graphite electrodes, were 6.21 × 10-7 and 2.03 × 10-7(Ω·cm)-1, respectively.

• 센서학회지
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• 제4권3호
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• pp.80-88
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• 1995

본 논문에서는 Al 및 TiW 금속을 상하층 전극으로 사용하고 이들 금속사이에 절연물이 존재하는 금속-절연물-금속(metal-insulator- metal : MIM) 구조의 안티휴즈 소자를 만들고 금속층간 절연물의 성질에 따른 안티휴즈 특성에 대하여 연구하였다. 금속층간 절연물로는 R.F 스퍼터링법에의해 형성된 실리콘 산화막과 탄탈륨 산화막으로 구성된 이층 절연물을 사용하였다. 이러한 안티휴즈 구조에서 실리콘 산화막은 프로그램 전의 안티휴즈 소자를 통해 흐르는 누설전류를 감소시켰으며, 실리콘 산화막에 비해 절연 강도가 낮은 탄탈륨 산화막은 안티휴즈 소자의 절연파괴전압을 저 전압으로 낮추는 역할을 하였다. 최종적으로 제조된 $Al/Ta_{2}O_{5}(10nm)/SiO_{2}(10nm)/TiW$ 구조에서 1 nA 이하의 누설전류와 약 9V의 프로그래밍 전압을 갖고 수 초내에 프로그램이 완성되는 전기적 특성이 안정된 안티휴즈 소자를 제조하였다. 그리고 이때 소자의 OFF 및 ON 저항은 각각 $3.65M{\Omega}$ 및 $7.26{\Omega}$이었다. 이와 같은 $Ta_{2}O_{5}/SiO_{2}$ 구조에서 각 절연물의 두께를 조절함으로써 측정 전압에 민감하고 재현성 있는 안티휴즈 소자를 제조할 수 있었다.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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• pp.165-168
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• 2000

We fabricated ramp-edge Josephson junctions with barriers formed by interface treatments instead of epitaxially grown barrier layers. A low-dielectric Sr$_2$AlTaO$_6$(SAT) layer was used as an ion-milling mask as well as an insulating layer for the ramp-edge junctions. An ion-milled YBa$_2$Cu$_3$O$_{7-x}$ (YBCO)-edge surface was not exposed to solvent through all fabrication procedures. The barriers were produced by structural modification at the edge of the YBCO base electrode using high energy ion-beam treatment prior to deposition of the YBCO counter electrode. We investigated the effects of high energy ion-beam treatment, annealing, and counter electrode deposition temperature on the characteristics of the interface-controlled Josephson junctions. The junction parameters such as T$_c$, I$_c$c, R$_n$ were measured and discussed in relation to the barrier layer depending on the process parameters.

• 한국재료학회지
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• 제7권2호
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• pp.107-113
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• 1997

플라즈마를 이용한 유기금속 화학증착법에 의해 $Pt/Ti/SiO_{2}/Si$기판위에 $SrBi_{2}Ta_{2}O_{9}(SBT)$박막이 제조되었다. X-ray회절패턴, 미세구조 및 조성분석으로부터 Sr과 Ta bubbling 온도는 $120^{\circ}C$로 고정되었으며 Bi bubbling온도가 변화되었다. Bi bubbling 온도 $130^{\circ}C$에서 얻어진 SBT 박막의 유전상수 및 유전손실은 100kHz에서 각각 150과 0.02이며 누설전류 밀도는 20kV/cm 에서 약 $1.0{\times}10^{-8}A/cm^2$이었다. 이 조건에서 얻어진 SBT박막의 누설전류 특성은 poole-Frenkel기구에 의해서 지배된다. $550^{\circ}C$에서 annealing된 SBT박막의 잔류분극($_{2}P_{r}$)은 $9{\mu}C/cm^2$이며 항전계는 70kV/cm이었다.

• 한국자기학회지
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• 제16권5호
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• pp.240-244
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• 2006

본 연구에서는 하지층으로 사용한 Mo(MoN)의 두께 변화에 따른 스핀밸브 구조의 자기적 특성과 열처리 결과를 비교 검토하였다. 사용된 스핀밸브는 Si기판/$SiO_2/Mo(MoN)(t{\AA})/NiFe(21\;{\AA})/CoFe(28\;{\AA})/Cu(22\;{\AA})/CoFe(18\;{\AA})/IrMn(65\;{\AA})/Ta(25\;{\AA})$ 구조이다. 또한 본 연구에서는 MoN 하지층을 Si기판에 증착하여 열처리후 특성을 분석하였다. MoN 박막의 질소량이 증가(5 sccm까지)할수록 비저항은 증가하였다. $600^{\circ}C$에서 열처리 후 측정한 XRD 결과를 보면 Si/Mo(MoN) 박막에서 규소화합물을 발견할 수 없었다. MoN을 하지층으로 사용할 경우 $300^{\circ}C$에서 열처리 후 측정한 XPS 결과를 보면 질소 유입량이 5 sccm인 경우가 질소 유입량이 1 sccm인 경우보다 안정적임을 알았다. Mo(MoN) 하지층을 사용한 경우 하지층 두께 변화($45{\AA}$)에 따라 자기저항비와 교환결합력의 변화는 소폭이었다. Mo 하지층의 열처리 온도별 자기저항비는 열처리 전 상온에서 7.0%이었고, $220^{\circ}C$ 열처리 때 7.5%로 증가하였다. 이후 열처리 온도를 $300^{\circ}C$까지 증가 시키면 자기저항비는 7.5%에서 3.5%로 감소하였고, 질소유입량이 변화(5 sccm까지)하여도 유사한 경향을 보였다.

• 한국약용작물학회지
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• 제10권2호
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• pp.139-143
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• 2002

각 균주에 대하여 씀바귀 분말 시료들이 독성을 나타내지 않는 범위에서 강력한 발암물질로써 직접 변이원으로 사용된 $MNNG(0.4{\mu}g/plate)$의 경우 S. typhymurium TA100 균주에서 시료농도 $100{\mu}g/plate$에서 메탄올 추출물이 84.51%로 가장 높은 억제효과가 나타났으며, $4NQO(0.15{\mu}g/plate)$에 대한 S. typhymurium TA98 균주에서 시료농도 $100{\mu}g/plate$에서는 물 분획물이 86.73%로 가장 높은 억제효과를 나타내었다 또한, TA100균주의 경우에는 부탄올 분획물에서 88.93%로 가장 높은 억제효과를 나타내었다. 간접변이원인 B(a)P를 사용한 실험에서 TA98 균주에서는 메탄올 추출물이 86.98%로 가장 높은 억제효과를 보였으며, TA100 균주에서는 부탄올 분획물이 75.35%로 가장 높은 억제효과를 나타냈다. 암세포주(A549, Hep3B, MCF-7)에 대한 씀바귀 분말의 증식 억제효과를 알아보기 위하여 실험한 결과, 폐암세포주인 A549세포에서는 핵산 분획물$(500{\mu}g/ml)$이 87.91%로 가장 높은 억제효과를 나타내었으며, 간암 세포주인 Hep3B 에서는 핵산 분획물$(375{\mu}g/ml)$이 70.64%로 가장 높은 억제효과를 나타냈다. 유방암 세포주인 MCF-7에서도 핵산 분획물$(375{\mu}g/ml)$이 82.89%로 가장 높은 억제효과를 보였으며, 인간 정상 간세포 293에 대해서는 24% 이하의 생육억제율을 보였다. 이는 암세포주에 대한 높은 억제효과에 비해 정상세포에 대해서는 비교적 낮은 증식 억제효과를 나타냄을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.239-240
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• 2008

As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.

• 한국자기학회지
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• 제14권5호
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• pp.163-168
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• 2004

나노 두께의 NiFe의 자기적 특성을 살펴보기 위해 Si(100)/ $SiO_2$(200 nm)/Ta(5 nm)/N $i_{80}$F $e_{20}$(1～15 nm)의 구조를 ICP형 헬리콘 스퍼터로 제작하였다. 제작된 시편의 자기적 물성은 SQUID를 이용하여 $\pm$50 Oe에서의 4.2K와 300K에서 각각의 M-H loop를 측정하여 자기탄성에너지 변화와 보자력을 확인하였다. 또한 SQUID로 4.2K-300K에서의 M-T curve를 통해 온도에 따른 포화자화를 두께에 따라 살펴보았다. TEM을 사용하여 제작된 시편의 각 계면간의 미세구조를 살펴보았다 나노두께의 NiFe는 3 nm 이하에서는 $B_{bulk}$=0, $B_{surf}$=-3${\times}$$10^{-7}$(J/$m^2$)의 자기 탄성계수를 보였으며, 보자력은 급격히 증가하는 것을 확인하였다. 나노 두께의 퍼말로이는 계면효과에 의해서 벌크특성과 다른 자기탄성계수, 보자력, Ms의 변화가 발생하였다. 따라서 나노급 소자를 제작할 때 이러한 변화를 고려하여 설계하여야 하였다.