• 한국주조공학회지
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• 제19권6호
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• pp.456-465
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• 1999

The overall objective of this study is to investigate the effect of Ag addition on the mechanical properties and microstructure of rapid solidified 7000 Al series alloys. Al-Zn-Mg-Cu alloys with small amounts of Ag was fabricated into the powder by gas atomization. The powder was extruded after the cold compaction and degassing and then followed by T6 heat treatment. Microstructure observation, phase analysis, room and high temperature tensile test and hardness test were pursued. The tensile strength and hardness of Ag-added alloy after heat treatment was increased with increasing Ag contents. However, the elongation of extruded alloys was not increased as much as to be expected. The reason of this result seems to be related to $the{\Omega}$ phase, which contribute to the high temperature strength stability of Al-Cu-Zn alloys through the formation of eutectoid with Ag addition.

• ETRI Journal
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• 제31권6호
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• pp.749-754
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• 2009

The design and performance of an InGaAs/InP transimpedance amplifier and post amplifier for 40 Gb/s receiver applications are presented. We fabricated the 40 Gb/s transimpedance amplifier and post amplifier using InGaAs/InP heterojunction bipolar transistor (HBT) technology. The developed InGaAs/InP HBTs show a cut-off frequency ($f_T$) of 129 GHz and a maximum oscillation frequency ($f_{max}$) of 175 GHz. The developed transimpedance amplifier provides a bandwidth of 33.5 GHz and a gain of 40.1 $dB{\Omega}$. A 40 Gb/s data clean eye with 146 mV amplitude of the transimpedance amplifier module is achieved. The fabricated post amplifier demonstrates a very wide bandwidth of 36 GHz and a gain of 20.2 dB. The post-amplifier module was fabricated using a Teflon PCB substrate and shows a good eye opening and an output voltage swing above 520 mV.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1984-1986
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• 2000

In pulsed-power techniques. Marx generator is generally used for the high-power device. but this generator has insulation and spatial problems. So we will suggest a pulse transformer that has a small size to generate the high voltage pulse instead of Marx generator. In this paper, Pulse duration is 4 [${\mu}s$] and the ratio of input and output voltage is 40[kV]/200[kV](step-up ratio=5). The output voltage and the process of pulse compression for pulse circuit are simulated by EMTP (Electro-Magnetic Transient Program). The secondary voltage of pulse transformer is about 200[kV] and pulse width is 4[t/s]. When the secondary winding of the pulse transformer is saturated. the pulse width is 1.25[${\mu}s$]. We selected dummy load 50[$\Omega$] for impedance matching. The pulse voltage of dummy load is 100[kV] and pulse width is 500[ns].

• Geomechanics and Engineering
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• 제10권6호
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• pp.827-836
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• 2016

The rate of softening is an important factor to determine whether the failure occurs along localized shear band or in a more diffused manner. In this paper, strength loss and softening rate effect depending on sensitivity are investigated for weakly cemented clays, for both artificially cemented high plasticity San Francisco Bay Mud and low plasticity Yolo Loam. Destructuration and softening behavior for weakly cemented sensitive clays are demonstrated and discussed through multiple vane shear tests. Artificial sensitive clays are prepared in the laboratory for physical modeling or constitutive modeling using a small amount of cement (2 to 5%) with controlled initial water content and curing period. Through test results, shear band thickness is theoretically computed and the rate of softening is represented as a newly introduced parameter, ${\omega}_{80%}$. Consequently, it is found that the softening rate increases with sensitivity for weakly cemented sensitive clays. Increased softening rate represents faster strength loss to residual state and faster minimizing of shear band thickness. Uncemented clay has very low softening rate to 80% strength drop. Also, it is found that higher brittleness index ($I_b$) relatively shows faster softening rate. The result would be beneficial to study of physical modeling for sensitive clays in that artificially constructed high sensitivity (up to $S_t=23$) clay exhibits faster strain softening, which results in localized shear band failure once it is remolded.

• 천문학논총
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• 제30권2호
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• pp.309-313
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• 2015

If the present universe is slightly open then pre-inflation curvature would appear as a cosmic dark-flow component of the CMB dipole moment. We summarize current cosmological constraints on this cosmic dark flow and analyze the possible constraints on parameters characterizing the pre-inflating universe in an inflation model with a present-day very slightly open ${\Lambda}CDM$ cosmology. We employ an analytic model to show that for a broad class of inflation-generating effective potentials, the simple requirement that the observed dipole moment represents the pre-inflation curvature as it enters the horizon allows one to set upper and lower limits on the magnitude and wavelength scale of pre-inflation fluctuations in the inflaton field and the curvature parameter of the pre-inflation universe, as a function of the fraction of the total initial energy density in the inflaton field. We estimate that if the current CMB dipole is a universal dark flow (or if it is near the upper limit set by the Planck Collaboration) then the present constraints on ${\Lambda}CDM$ cosmological parameters imply rather small curvature ${\Omega}_k{\sim}0.1$ for the pre-inflating universe for a broad range of the fraction of the total energy in the inflaton field at the onset of inflation. Such small pre-inflation curvature might be indicative of open-inflation models in which there are two epochs of inflation.

• 가정간호학회지
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• 제20권1호
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• pp.24-32
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• 2013

Purpose: This study aimed to clarify the characteristics of musculoskeletal problems in elderly Korean women and their actual and current use of dietary supplements by conducting a descriptive survey. Methods: The 1-month study began on April 3, 2012. A total of 150 elderly women from City D responded to the survey questionnaire used in this study. Results: Among the respondents, 55.3% used dietary supplements, although they had not consulted a physician for a definitive diagnosis of their condition but reported a self-perceived musculoskeletal problem instead. In addition, they engaged in healthy behaviors such as exercising and dietary supplement intake, without receiving any medical treatment. Compared with the nonusers, the dietary supplement users self-perceived a relatively more serious musculoskeletal problem (t =4.566, p<.001). Among the most commonly used supplements, multivitamins ranked first, followed by glucosamine and omega-3. Conclusion: Nurses should thoroughly monitor and maintain a positive attitude toward their patients' use of dietary supplements in order to appropriately educate them about the proper use of supplements.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 춘계학술대회 논문집 에너지변화시스템부문
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• pp.248-250
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• 2009

고효율 태양전지를 위한 결정질 태양전지의 구조 중 UNSW에서 개발한 BCSC(buried contact solar cell)가 있는데, 이는 전면 전극을 laser 처리 후 무전해 니켈 도금으로 형성한 것이다. 이같은 전면 전극을 형성하기 위해서는 무전해 nickel 도금 후 열처리가 필수적이다. 우리는 이 공정을 확립하기 위해 결정질 wafer에 후면을 PECVD로 SiNx막을 형성하여 $30\Omega/\square$로 도핑한 후 후면을 불산으로 제거한 상태에서 양면을 니켈 무전해 도금으로 전극을 형성하여 $300^{\circ}C,\;350^{\circ}C,\;400^{\circ}C$에서 각각 3,6,9분간 진행하였다. 그 결과 $400^{\circ}C$에서 3분간 열처리된 sample이 상대적으로 가장 명확한 IV curve를 형성하였다. 이 실험의 결과는 PN 접합 구조에서 전극을 nickel로 사용할 때 유용하게 사용될 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.573-576
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• 2000

The physical, electrical and piezoresitive characteristics of CrN(chromium nitride) thin-films on silicon substrates have been investigated for use as strain gauges. The thin-film depositions have been carried out by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(5∼25 %)Na$_2$). The deposited CrN thin-films with thickness of 3577${\AA}$ and annealing conditions(300$^{\circ}C$, 48 hr) in Ar-10 % N$_2$deposition atmosphere have been selected as the ideal piezoresistive material for the strain gauges. Under optimum conditions, the CrN thin-films for the strain gauges is obtained a high electrical resistivity, $\rho$=1147.65 ${\mu}$$\Omega$cm, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=11.17.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.422-426
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• 2003

Cu thin films of $6000{\AA}$ thickness were deposited by Electron Beam Evaporation(EBE) method on the glass. The resistivity properties and adhesion of Cu thin films were investigated by various annealing and substrate temperature. Cu thin films were annealed in the air and vacuum condition for 10 min after the deposition. The resistivity and adhesion(the force required to separate films from substrates) was measured by 4-point probe and scratch testing. The resistivity of non-annealing Cu thin films was distinguished more substrate temperature loot than substrate temperature R.T, $200^{\circ}C$. In the case of air condition annealing, as heating temperature was increased, the resistivity was decreased. In the case of vacuum condition annealing, the resistivity was increased at heating temperature $200^{\circ}C$. The best resistivity($1.72\;{\mu}{\Omega}{\cdot}cm$) of Cu thin films was obtained by the air condition heating temperature $200^{\circ}C$ at the substrate heating temperature $100^{\circ}C$. As a result of scratch testing, adhesion was increased by annealing. And maximum adhesion had 600 gf.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.271-275
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• 2004

A fast switching thyristor with a superior trade-off property between the on-state voltage drop and the turn-off time could be fabricated by the proton irradiation method. After fabricating symmetric thyristor dies with a voltage rating of 1,600V from $350{\mu}m$ thickness of $60{\Omega}cm$ NTD-Si wafer and $200{\mu}m$ width of N-base drift layer, the local carrier lifetime control by the proton irradiation was performed with help of the HI-13 tandem accelerator in China. The thyristor samples irradiated with 4.7MeV proton beam showed a superior trade-off relationship of $V_{TM}=1.55V\;and\;t_q=15{\mu}s$ attributed to a very narrow layer of short carrier lifetime(${\sim}1{\mu}s$) in the middle of its N-base drift region. To explain the small increase of $V_{TM}$, we will introduce the effect of carrier compensation by the diffusion current at the low carrier lifetime region.