• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.207-209
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• 2004

Currently, for satisfying the needs of scaled MOSFET's a high quality thin oxide dielectric is desired because the properties of conventional $SiO_2$ film are not acceptable for these very small sized transistors. As an alternative gate dielectric have drawn considerable alternation due to their superior performance and reliability properties over conventional $SiO_2$, to obtain the superior characteristics of ultra thin dielectric films, $N_2O$ grown thin oxynitride has been proposed as a dielectric growtuanneal ambient. In this study the authors observed process characteristics of $N_2O$ grown thin dielectric. In view points of the process characteristics of MOS capacitor, the sheet resistance of 4.07$[\Omega/sq.]$, the film stress of $1.009e^{10}[dyne/cm^2]$, the threshold voltage$(V_t)$ of 0.39[V], the breakdown voltage(BV[V]) of 11.45[V] was measured in PMOS. I could achieve improved electrical characteristics and reliability for deep submicron MOSFET devices with $N_2O$ thin oxide.

• The KSFM Journal of Fluid Machinery
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• v.4 no.4 s.13
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• pp.37-42
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• 2001

In the present study, flow characteristics of turbulent oscillatory flow in an oscillator connected to square-sectional $180^{\circ}$ curved duct are investigated experimentally. In order to investigate wall shear stress and pressure distributions, the experimental studies for air flows we conducted in a square-sectional $180^{\circ}$ curved duct by using the LDV system with the data acquisitions and the processing system. The wall shear stress at bend angle of the $150^{\circ}$ and pressure distribution of the inlet (${\phi}=0^{\circ}$) to the outlet (${\phi}=180^{\circ}$) by $10^{\circ}$ intervals of the duct are measured. The results obtained from the experiment are summarized as follows : wall shear stress values in the inner wall we larger than those in an outer wall, except for the phase angle (${\omega}t/{\pi}/6$) of 3, because of the intensity of secondary flow. The pressure distributions are the largest in accelerating and decelerating regions at the bend angle(${\phi}$) of $90^{\circ}$ and pressure difference of inner and outer walls is the largest before and after the ${\phi}=90^{\circ}$.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.478-483
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• 2003

In this paper, in order to fabricate the circularly polarized diversity system which will mitigate multipath fading, 5.8GHz band microstrip array antenna were designed and fabricated. These antenna were designed using Ensemble 6.0 program and the fabricated antenna were vertical and horizontal polarized antenna, left-handed circularly polarized antenna, and right-handed circularly polarized antenna. The designed antenna parameters included S11 and impedance characteristics of fabricated antenna were measured using Network Analyzer(8753ES). From the measurement results, the S11 for each polarization antenna at resonance frequency of 5.8GHz band was showed -38dB, -44dB, and -50dB respectively and it was similar to the simulation result, and also the impedance can be matched at $50{\Omega}$. In order to compare polarization characteristics, broadband measurement was also conducted in this paper.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.22-27
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• 1992

Phosphorus doped hydrogenated microcrystalline silicon (${\mu}c$-Si:H) thin films were deposited by PECVD (Plasma Enhanced Chemical Vapour Deposition) method using 10.2% $SiH_4$ gas (diluted in Ar) and 308ppm $PH_3$ gas (diluted in Ar). The structural, optical and electrical properties of the films were investigated as a function of substrate temperature(15 to $400^{\circ}C$) and RF power(10 to 120W). The thin film deposited by varing substrate temperature had columnar structure and microcrystalline phase. The volume fraction of microcrystalline phase in the films deposited at RF power of 80W, increased with increasing substrate temperature up to $200^{\circ}C$, and then decreased with further increasing substrate temperature. Volume fraction of microcrystalline phase increased monotonously with increasing RF power at substrate temperature of $250^{\circ}C$. With increasing volume fraction of microcrystalline, electrical resistivity of films decreased to 0.274 ${\Omega}cm$.

• 한국전산유체공학회:학술대회논문집
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• 2011.05a
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• pp.362-367
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• 2011

The aerodynamic performance of the pantograph of the next generation high sped train is analyzed. The calculation of the flow around pantograph is carried cut by FLUENT; by the steady state flow calculation with ${\kappa}-{\omega}$ SST turbulence model, the lift force of the pantograph is computed. For the verification of the numerical schemes am grid systems, flow calculations are performed with the pantograph shape which was used at the experiments performed at Railway Technical Research Institute (RTRI) in Japan. Then, the difference of lift force between numerical am experimental results is about 10%. Therefore, selected numerical schemes and the current grid system is adequate for the analysis am prediction of the aerodynamic performance of panthograph system. Based on these numerical schemes am grid system, the flow around pantograph of the next generation high sped train is calculated and the lift force of the pantograph is predicted; the lift force of the pantograph is about 146N.

• Journal of computational fluids engineering
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• v.18 no.1
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• pp.91-97
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• 2013

In the present study, the effects of contaminant accumulation and surface roughness on the aerodynamic performance of wind turbine blade sections were numerically investigated by using a flow solver based on unstructured meshes. The turbulent flow over the rough surface was modeled by a modified ${\kappa}-{\omega}$ SST turbulence model. The calculations were made for the NREL S809 airfoil with varying contaminant sizes and positions at several angles of attack. It was found that as the contaminant size increases, the degradation of the airfoil performance becomes more significant, and this trend is further amplified near the stall condition. When the contaminant is located at the upper surface near the leading edge, the loss in the aerodynamic performance of the blade section becomes more critical. It was also found that the surface roughness leads to a significant reduction of lift, in addition to increased drag.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.594-599
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• 2009

Recent developments such as concern over global warming, depletion of fossil fuels and increase in energy demands by the increasing world population has eventually lead to mass production of electricity using renewable sources. Apart from wind and solar, ocean holds tremendous amount of untapped energy in forms such as geothermal vents, tides and waves. The current study looks at generating power using waves and the focus is on the primary energy conversion (first stage conversion) of incoming waves for different models. Observation of flow characteristics and the velocity in the augmentation channel as well as the front guide nozzle are presented in the paper. A numerical wave tank was used to simulate the waves and after obtaining the desired wave properties; the augmentation channel plus the front guide nozzle and rear chamber were integrated to the numerical wave tank. The waves in the numerical wave tank were generated by a piston type wave maker which was located at the wave tank inlet. The inlet which was modeled as a plate wall moved sinusoidally with the general function, x=asin$\omega$t The augmentation channel consisted of a front nozzle, rear nozzle and an internal fluid region representing the turbine housing. The analysis was performed using the commercial CFD code ANSYS-CFX.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.129-129
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• 2011

냉음극 변압기 전원 소스를 이용하여 저진공에서 플라즈마를 발생시키는 시스템을 개발하였다. 또한 이 장치를 이용하여 도핑된 산화막 증착 기술을 연구하였다. 이 때 도핑 전구체는 액체 소스였으며 이를 기화시켜 사용하였다. 특히 p 타입이 도핑된 이산화규소 박막 증착을 상온에서 실시하였다. 공정 압력은 400~1,000 mT였으며, 전압은 약 1,100~2,100 V 범위에서 조절하였다. 증착된 박막은 박막 두께와 홀 측정을 실시하였다. 홀 측정을 위한 인듐 금속 접합을 400 C에서 실시하였다. 결과를 요약하면, 플라즈마 공정 압력이 400에서 1,000 mTorr로 증가함에 따라 박막 증착 속도는 약 240~440 ${\AA}$/min이었다. 또한 증착된 p-SiO2의 벌크 농도는 같은 압력 증가에 따라 약 $1.2{\times}10^{19}$에서 $6.5{\times}10^{18}/cm^3$으로 절반 정도 감소하였다. 그에 따라 도핑된 산화막의 비저항은 $~1.4{\times}10^{-3}$에서 $2.5{\times}10^{-3}{\Omega}{\cdot}cm$로 증가하였다. 홀 이동도는 약 380~400 $cm^2/V{\cdot}s$를 유지하였다. 또한 전압이 1,100 에서 2,100 V로 증가함에 따라 산화막의 증착 속도는 약 330에서 410 ${\AA}$/min으로 증가하였다. 그러나 전압이 증가해도 벌크 농도는 약 8,9~$6.6{\times}10^{18}/cm^3$의 범위였다. 보다 자세한 결과는 발표를 통해 설명할 것이다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.97.1-97.1
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• 2018

본 연구는 초고온 열처리 과정에서 멀티레이어 투명전극 박막의 고내열성, 고신뢰성을 얻기 위해 보호층을 삽입한 연구이다. 먼저 보호층의 고내열 효과를 알아보기 위해 보호층을 삽입한 박막과 그렇지 않은 박막을 200, 300, 400, 500, $550^{\circ}C$로 각각 열처리하여 비교하였다. 보호층을 삽입하지 않은 박막은 $500^{\circ}C$에서 멀티레이어 박막이 응집하여 전기적 광학적 특성이 저하되었다. 반면, 보호층을 삽입한 박막은 $550^{\circ}C$에서도 투과율 (%T) 89.5% (at 550nm wavelength), 면저항 $3.5{\Omega}/sq$로 투명전극으로서 뛰어난 특성을 보였다. 또한 고신뢰성을 확인하기 위해 상대습도 85%, 온도 $85^{\circ}C$ 조건에서 120시간 동안 항온항습 테스트를 수행하였다. 보호층이 없는 투명전극의 박막은 산화가 일어나 전기적 광학적 특성이 저하 되었으나, 보호층을 삽입한 투명전극의 박막은 전기적 광학적 특성의 변화가 거의 없는 것으로 확인되어 본 멀티레이어 투명전극에서 보호층의 핵심적인 효과를 입증할 수 있었다.

• Journal of Sensor Science and Technology
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• v.15 no.6
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• pp.386-390
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• 2006

This paper describes the ohmic contact formation of polycrystalline 3C-SiC films deposited on thermally grown Si wafers. In this work, a TiW (titanium tungsten) film as a contact material was deposited by RF magnetron sputter and annealed with the vacuum process. The specific contact resistance (${\rho}_{c}$) of the TiW contact was measured by using the C-TLM (circular transmission line method). The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature as also analyzed by XRD (X-ray diffraction) and SEM (scanning electron microscope). All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30 min., the lowest contact resistivity of $2.90{\times}10{\Omega}cm^{2}$ was obtained due to the improved interfacial adhesion. Therefore, the good ohmic contact of polycrystalline 3C-SiC films using the TiW film is very suitable for high-temperature MEMS applications.