• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.7
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• pp.292-297
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• 2002

In this paper, a flat-type $L_{-}$-$B_{8}$ mode Ultrasonic Motor[USM] having the size of 80 x 20 x ${1.5}mm^3$($l{\times}\omega{\times}t$) was designed and fabricated to examine the characteristics of an ultrasonic vibration. We used ANSYS simulation program based on FEM to get the optimum design of this USM. As results of experiment, the fastest speed of revolution(v), the maximum torque(T) and the efficiency(n) were 37.5cm/s, 5.0 mN.m and 1.17% when 27.9KHz, 150N, 50V were applied respectively. And this flat-type $L_{-}$-$B_{8}$ mode USM could be controlled the speed of rotor revolution by applied voltage, frequency and pre-load of rotor as well as showed the characteristics of typical drooping torque-speed, large torque and high speed. So, we think that this flat-type $L_{-}$-$B_{8}$ mode USM has characteristics of enough torque and velocity to be usable for applications in forwarding device of an electric card or a paper, etc.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1236-1238
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• 1994

TiAlN thin films were prepared by a multi target r.f magnetron sputtering system under different conditions. We have investigated the resistivity and T.C.R. (Temperature Coefficient of Resistance) characteristics of TiAlN films deposited on $Al_2O_3$ and glass substrates by sputtering in an $Ar:N_2$ gas mixture. We used Al and Ti metal as Target Material and $Ar:N_2$ gas as working gas. We varied the partial pressure ratio of $N_2/Ar$ from 0.2/7 to 1.0/6.2 (SCCM). And the R.F power of Ti and Al Target also were varied as 160/240, 200/200 and 240/160(W). In this experiment, we can get the precision thin film resistor with a very low T.C.R. (Temperature Coefficient of Resistance) below 25 ppm ${\Omega}/^{\circ}C$.

• The Korean Journal of Ceramics
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• v.5 no.2
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• pp.183-188
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• 1999

The crystallization behavior and electrical conductivity of the $CuO-Bi_2O_3-V_2O_5$ glasses with various CuO content were investigated. The glass formation regin was 0~20 mol% Bi2O3, 5~55 mol% CuO, and 30~90 mol% $V_2O_5$ with Tg=$275^{\circ}C$~$290^{\circ}C$. Among glasses with various compositions, the 31CuO-$14Bi_2O_3-55V_2O_5$ (mol%) glass heat-treated at $358^{\circ}C$ for 8 h showed the highest conductivity of ~ at room temperature. The heat-treated glasses increased in electrical conductivity by the order of 104 compared to non heat-treated glass. The linear relationship between 1n($\sigma$T)and $T^{-1}$ indicated that electrical conduction in the 31CuO-$14Bi_2O_3-55V_2O_5$ (mol%) glass occurred by a small polaron hopping.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.412-415
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• 2004

PTC Thermistors specimens were fabricated by added $MnO_2$ as donors, and $Nb_2O_5$ as accepters and sintered $1250^{\circ}C/2hrs$. Average grain size decreased with increased in added $MnO_2$, and increased with added in $Nb_2O_5$. But, appeared liquid phase as $BaTiO_3$ and $TiO_2$, affect to grain growth. XRD result, peak strength waslowed then crystallization not well, but, secondary phase were not showed all specimens. All specimens resistance were so high, about $40M{\Omega}$ over, couldn't measured to those resistance and doesn't appear PTCR effect.

• Bulletin of the Korean Mathematical Society
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• v.56 no.1
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• pp.57-71
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• 2019

Let R be an associative ring with identity, M a t.u.p. monoid with only one unit and ${\omega}:M{\rightarrow}End(R)$ a monoid homomorphism. Let R be a reversible, M-compatible ring and ${\alpha}=a_1g_1+{\cdots}+a_ng_n$ a non-zero element in skew monoid ring $R{\ast}M$. It is proved that if there exists a non-zero element ${\beta}=b_1h_1+{\cdots}+b_mh_m$ in $R{\ast}M$ with ${\alpha}{\beta}=c$ is a constant, then there exist $1{\leq}i_0{\leq}n$, $1{\leq}j_0{\leq}m$ such that $g_{i_0}=e=h_{j_0}$ and $a_{i_0}b_{j_0}=c$ and there exist elements a, $0{\neq}r$ in R with ${\alpha}r=ca$. As a consequence, it is proved that ${\alpha}{\in}R*M$ is unit if and only if there exists $1{\leq}i_0{\leq}n$ such that $g_{i_0}=e$, $a_{i_0}$ is unit and aj is nilpotent for each $j{\neq}i_0$, where R is a reversible or right duo ring. Furthermore, we determine the relation between clean and nil clean elements of R and those elements in skew monoid ring $R{\ast}M$, where R is a reversible or right duo ring.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.4
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• pp.47-52
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• 2003

A new type of Bi based glass frit was developed for Ag paste in PDP applications and its properties are compared with the commercially used Pb based glass frit. After optimization of the properties of Bi based frits for PDP application such as the softening temperature and the coefficient of thermal expansion (C.T.E), the screen printed electrodes prepared with the Bi based fit contained Ag paste were characterized. In $Bi_2O_3-B_2O_3-Al_2O_3$ glass system with the more than 50% of $Bi_2O_3$, the softening temperature, the thermal expansion coefficient and the line resistivity was 400∼$480^{\circ}C$, 7.31∼$10.02\times 10^{-6}/^{\circ}C$> and 4.1∼4.8$\Omega$ respectively. Properties of the Bi based frits are comparable with the Pb based frits. A printability and an uniformity of the Bi based frits were excellent in screen printed Ag eletrode. The Bi based frit system is an excellent candidate material for Pb free and Alkali free frit in PDP applications.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.3
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• pp.71-76
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• 2012

A chip interconnection technology for smart fabrics was investigated by using flip-chip bonding of SnBi low-temperature solder. A fabric substrate with a Cu leadframe could be successfully fabricated with transferring a Cu leadframe from a carrier film to a fabric by hot-pressing at $130^{\circ}C$. A chip specimen with SnBi solder bumps was formed by screen printing of SnBi solder paste and was connected to the Cu leadframe of the fabric substrate by flip-chip bonding at $180^{\circ}C$ for 60 sec. The average contact resistance of the SnBi flip-chip joint of the smart fabric was measured as $9m{\Omega}$.

• Journal of the Korean Society of Propulsion Engineers
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• v.19 no.6
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• pp.19-25
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• 2015

Numerical simulations of the hot gas valve with a pintle have been conducted in order to investigate the effect of numerical methods and computational domains. The grid sensitivity is checked by varying the grid number from 100,000 to 1,700,000. The existence of ambient region doesn't make the significant differences of the flow-field and the temperature distribution. Three turbulence models are adopted to figure out its influence on the thrust and temperature distribution: Spallart-Allmaras, RNG $k-{\varepsilon}$, $k-{\omega}$ SST. The thrusts of the hot gas valve are almost same in all cases of the simulation, however, there are about 5% difference in the temperature distribution. With the ambient region, the difference are observed in the temperature distribution with respect to the number of grids.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.629-637
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• 2008

We report several experimental data capable of evaluating the amorphous-to-crystalline (a-c) phase transformation in $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ (x = 0, 0.05, 0.1) thin films prepared by a thermal evaporation. The isothermal a-c structural phase changes were evaluated by XRD, and the optical transmittance was measured in the wavelength range of $800{\sim}3000$ nm using a UV-vis-IR spectrophotometer. A speed of the a-c transition was evaluated by detecting the reflection response signals using a nano-pulse scanner with 658 nm laser diode (power P = $1{\sim}17$ mW, pulse duration t = $10{\sim}460$ ns). The surface morphology and roughness of the films were imaged by AFM. It was found that the crystallization speed was so enhanced with an increase of Ag content. While the sheet resistance of c-phase $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ was similar to that of c-phase $Ge_2Sb_2Te_5$ (i.e., $R_c{\sim}10{\Omega}/{\square}$), the sheet resistance of a-phase $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ was found to be lager than that of a-phase $Ge_2Sb_2Te_5$, $R_a{\sim}5{\times}10^6{\Omega}{/\square}$. For example, the ratios of $R_a/R_c$ for $Ge_2Sb_2Te_5$ and $(Ag)_{0.1}(Ge_2Sb_2Te_5)_{0.9}$ were approximately $5{\times}10^5$ and $5{\times}10^6$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.638-644
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• 2008

The effects of $Nb_2O_5$ and $MnO_2$ on the positive temperature coefficient of resistivity (PTCR) behavior of lead-free $Ba_{0.99}(Bi_{1/2}Na_{1/2})_{0.01}TiO_3$ (BaBiNT) ceramics were investigated in order to fabricate a PTC thermistor available at high temperature of > $120^{\circ}C$. In particular, 0.05 mol% $Nb_2O_5$ added BaBiNT ceramic, which has significantly increased Curie temperature (Tc) of $160^{\circ}C$, showed good PTCR behavior; low resistivity at room temperature $(\rho_r)$ of $80.1{\Omega}{\cdot}cm$, a high $\rho_{max}/\rho_{min}$ ratio of $5.65{\times}10^3$ and a large resistivity temperature factor (a) of 18.5%/$^{\circ}C$. Furthermore, the improved $\rho_{max}/\rho_{min}$ of $6.48{\times}10^4$ and a of 25.4%/$^{\circ}C$ along with higher $T_c$ of $167^{\circ}C$ despite slightly increased $\rho_r$ of $569{\Omega}{\cdot}cm$, could be obtained for the BaBiNT + 0.05 mol% $Nb_2O_5$ + 0.02 wt% $MnO_2$ ceramic cooled down at a rate of $200^{\circ}C/h$.