• Proceedings of the KIEE Conference
• /
• 2002.07c
• /
• pp.1488-1490
• /
• 2002

The (Bi,Ba,Sr)$TiO_3$[BBST] thin films were fabricated on Pt/Ti/$SiO_2$/Si substrate by RF sputtering method. We investigated the effects of Ar/$O_2$ rates on the structural properties of BBST thin films. Decreasing the $O_2$ rates, the intensity of $BaBi_4Ti_4O_{15}$ and $Bi_4Ti_3O_{12}$ peaks were increased but the $(Ba_{0.5}Sr_{0.5})TiO_3$ peak was decreased. In the case of BBST thin films deposited with condition of 90/10 (Ar/$O_2$) ratio, the composition of Ba/Sr/Bi was 0.35/0.4/0.25. Also, in the BBST thin films deposited with condition of 80/20(Ar/$O_2$) ratio, the composition of Br,Sr and Ti were relatively uniform. But the component of Bi and Ti were diffused into the Pt layers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.11
• /
• pp.933-938
• /
• 2002

(Ba,Sr)TiO$_{4}$ (BST) thin films on Pt/Ti/SiO$_{2}$/Si substrates were deposited by a sol-gel method and the etch characteristics of BST thin films have been investigated as a function of gas mixing ratio. The maximum etch rate of the BST films was 440 $AA$/min under such conditions as: CF$_{4}$(CF$_{4}$＋Ar) of 0.2, RF-power of 700 W, DC-bias voltage of -200 V, pressure of 15 mTorr and substrate temperature of 30 $^{circ}C$. The selectivities of BST to Pt, SiO$_{2}$ and PR were 0.38, 0.25 and 0.09, respectively. In the XPS (X-ray photoelectron spectroscopy) analysis, Barium (Ba) and Strontium (Sr) component in BST thin films formed low volatile compounds such as BaFx, SrFx, which are forms by the chemical reaction with F atoms and is removed by Ar ion bombardment. Titanium (Ti) is removed by chemical reaction such as TiF with ease. The result of secondary ion mass spectrometry (SIMS) analysis confirmed the existence of the BaFx, SrFK, TiFx.

• Journal of Korean Ophthalmic Optics Society
• /
• v.8 no.1
• /
• pp.7-10
• /
• 2003

Quarternary $SrO-B_2O_3-Al_2O_3-SiO_2$ glasses were fabricated as a function of $R({\equiv}SrO\;mole%/B_2O_3\;mole%)$ and $K({\equiv}(Al_2O_3+SiO_2)\;mole%/B_2O_3\;mole%)$. The structures of these glasses were investigated through Infrared absorption spectra. When R increased, the intensities of the absorption bands around $1,200{\sim}1,600cm^{-1}$ resulting from the B-O stretching vibration bond in the symmetrical trigonal $BO_3$ units decreased, and these of the absorption bands around $800{\sim}1,200cm^{-1}$ caused by the B-O stretching vibration bond of the tetrahedral $BO_4$ units varied. Also, the intensities of the absorption bands for the B-O stretching vibration band in trigonal $BO_3$ units increased and these of the bands for B-O stretching vibration bond in tetrahedral $BO_4$ units decreased as K increased.

• Journal of the Korean Vacuum Society
• /
• v.5 no.4
• /
• pp.359-364
• /
• 1996

$SrTiO_3$ thin films were deposited on Pt/Ti/$SiO_2$/Si substrates at low temperatures below $300^{\circ}C$ by r.f. magnetron sputtering. The materials and the electrical properties of the deposited films were investigated with controlling deposition parameters such as substrate temperature(T_s) and positive substrate d.c. bias voltage. Stoichiometric $SrTiO_3$ films were obtained at Ts of $300^{\circ}C$, but Sr content in the film was less than that of a target when Ts was lower than $300^{\circ}C$, resulting in poor electrical properties. By introducing a positive substrate d.c. bias during deposition, the crystallinity and the dielectric properties of the films were markedly improved. 400 nm thick $SrTiO_3$, films deposited at $300^{\circ}C$ with a positive substrate d.c. bias of 20V showed a columnar structure with <211> crystallographic direction and a dielectric constant of 98.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.4
• /
• pp.317-321
• /
• 2003

In this study, the structural properties were Investigated for the deposited (Ba,Sr)(Nb,Ti)O$_3$[BSNT] thin films grown on Pt/TiO$_2$/SiO$_2$/Si substrate by RF sputtering method. The structural properties of the BSNT thin films affected by the Ar/02 ratios were Investigated. In the case of the BSNT thin films deposited with condition of 60/40(Ar/O$_2$) ratio, the BaTiO$_3$, SrTiO$_3$ and BaNbO$_3$ phases were showed. The composition ratio of Nb and Ti in the BSNT thin films were nearly equivalent. Also, in the BSNT thin films deposited with condition of 60/40 and 80/20(Ar/O$_2$) ratios, the composition of Ba, Sr, Nb and Ti were relatively uniform. The Ba, Sr, Nb and Ti in the BSTN thin films were not diffused into the Pt layer.

• Korean Journal of Materials Research
• /
• v.5 no.6
• /
• pp.754-762
• /
• 1995

Strontium titanate(SrTiO$_3$) thin film was prepared on Si substrates by RF magnetron sputtering for a high capacitance density required for the next generation of LSTs. The optimum deposition conditions for SrTiO$_3$thin film were investigated by controlling the deposition parameters. The crystallinity of films and the interface reactions between SrTO$_3$film and Si substrate were characterized by XRD and AES respectively. High quality films were obtained by using the mixed gas of Ar and $O_2$for sputtering. The films were deposited at various bias voltages to obtain the optimum conditions for a high quality file. The best crystallinity was obtained at film thickness of 300nm with the sputtering gas of Ar+20% $O_2$and the bias voltage of 100V. The barrier layer of Pt(100nm)/Ti(50nm) was very effective in avoiding the formation of SiO$_2$layer at the interface between SrTiO$_3$film and Si substrate. The capacitor with Au/SrTiO$_3$/Pt/Ti/SiO$_2$/Si structure was prepared to measure the electric and the dielectric properties. The highest capacitance and the lowest leakage current density were obtained by annealing at $600^{\circ}C$ for 2hrs. The typical specific capacitance was 6.4fF/$\textrm{cm}^2$, the relative dielectric constant was 217, and the leakage current density was about 2.0$\times$10$^{-8}$ A/$\textrm{cm}^2$ at the SrTiO$_3$film with the thickness of 300nm.

• Korean Journal of Soil Science and Fertilizer
• /
• v.44 no.4
• /
• pp.575-580
• /
• 2011

The cultivation of once-over harvest pepper cultivars might be very valuable to Korean farmers who still depend on traditional hand-harvesting method. Thus, we conducted this experiment to obtain important information for enhancing the productivity of once-over harvest red pepper fruits by supplying several nutrient-controlling and growth-regulating chemicals, such as $KH_2PO_4$, $SiO_2$ and 2-chloroethylphosphonic acid (ethephon). Adequate fertilization was provided in each treatment plots. In this study, two once-over harvest pepper cultivars, Saengryeg No. 211 and 213 (SR 211 and SR 213), and one regular piecemeal harvest pepper cultivar, Kangryegdaetong (KRDT), were cultivated to evaluate the productivity of pepper fruit as affected by above chemicals. The distribution of macro- and micro-nutrients in pepper fruits among the cultivars were different in term of N, B, Cu, and Fe concentrations. In particular, the concentration of B in SR 213 was about 2 times higher than that in SR 211 and KRDT. However, overall red pepper productivity of SR 211 was markedly higher ($2.91{\sim}3.38Mg\;ha^{-1}$) than that ($1.68{\sim}2.37Mg\;ha^{-1}$) of SR 213. Also, the productivity of matured red pepper was significantly influenced by the treatments of $KH_{2}PO_{4}$, $SiO_2$ and ethephon. The yield indices for matured red pepper fruits were the highest with the treatment of $KH_2PO_4$ or $SiO_2$ with ethephon, which were 113~116% for SR 211 and 147~150% for SR 213. Thus, the applications of $KH_2PO_4$ or $SiO_2$ with ethephon would be suggested to enhance the productivity of matured red pepper fruit.

• Korean Journal of Materials Research
• /
• v.20 no.5
• /
• pp.241-245
• /
• 2010

One of the weak points of the Cr-doped SZO is that until now, it has only been fabricated on perovskite substrates, whereas NiO-ReRAM devices have already been deposited on Si substrates. The fabrication of RAM devices on Si substrates is important for commercialization because conventional electronics are based mainly on silicon materials. Cr-doped ReRAM will find a wide range of applications in embedded systems or conventional memory device manufacturing processes if it can be fabricated on Si substrates. For application of the commercial memory device, Cr-doped $SrZrO_3$ perovskite thin films were deposited on a $SrRuO_3$ bottom electrode/Si(100)substrate using pulsed laser deposition. XRD peaks corresponding to the (112), (004) and (132) planes of both the SZO and SRO were observed with the highest intensity along the (112) direction. The positions of the SZO grains matched those of the SRO grains. A well-controlled interface between the $SrZrO_3$:Cr perovskite and the $SrRuO_3$ bottom electrode were fabricated, so that good resistive switching behavior was observed with an on/off ratio higher than $10^2$. A pulse test showed the switching behavior of the Pt/$SrZrO_3:Cr/SrRuO^3$ device under a pulse of 10 kHz for $10^4$ cycles. The resistive switching memory devices made of the Cr-doped $SrZrO_3$ thin films deposited on Si substrates are expected to be more compatible with conventional Si-based electronics.

• Journal of the Korean Ceramic Society
• /
• v.35 no.5
• /
• pp.472-478
• /
• 1998

Ferroelectric SrBi2Ta2O9(SBT) films were deposited on Pt/Ti/SiO2/Si substrates at 50$0^{\circ}C$ using a sintered SBT target Bi and Ta targets by modified rf magnetron sputtering and then were annealed at 80$0^{\circ}C$ for 10min in oxygen ambinet(760 torr) The composition of the SBT films could be easily controlled using the mul-ti-targets. The film composition of {{{{ {Sr }_{0.8 } {Bi }_{2.9 } {Ta}_{2.0 } {O }_{9 } }} was obtained with SBTd sputtering power of 100 W Bi of 25W and Ta of 10 W. A 250nm thick SBT films exhibited a dense and uniform microstructure and showed the remanent polarization(Pr) of 14.4 $\mu$C/cm2 and the coercive field({{{{ {E }_{c } }})of 60 kV/cm at applied voltage of 5 V. The SBT films show practically no polarization fatigue up to {{{{ {10 }_{10 } }} cycles under 5V bipolar pulse. The retention characteristics of the SBT films looked very promising and the leakage current density of the SBT films was about 1.23$\times${{{{ {10 }^{-7 } }}A/c{{{{ {m }^{2 } }} at 120kV/cm.

• Proceedings of the Korean Nuclear Society Conference
• /
• 1996.05c
• /
• pp.385-390
• /
• 1996

Cs는 AW500 에서 높은 분배계수 값(K$_{Cs}$>$10^3$$m\ell$/g)을 얻었으며 , Sr은 13X, 평형 용액의 pH=10의 조건에서 최대의 분배계수값(K$_{Sr}$~$10^4$$m\ell$/g)을 보였고, 평형용액의 pH 증가에 따라서 급격히 증가하는 경향을 보였다. 또한 AW500-Cs와 13X-Sr계는 고액비, 즉 V/m=40, 및 초기용액의 pH가 3 이상에서 최대의 분배계수 값을 얻었으며, 혼합제올라이트의 비(AW500/13X)가 1.5인 조건에서 Cs과 Sr을 효과적으로 동시에 분리할 수 있음 보았다. 그리고 1,10$0^{\circ}C$에서 배소한 AW500-Cs는 CsAlSi$_2$O$_{6}$로 재결정되며 , 13X-Sr은 SrAI$_2$Si$_2$O$_{8}$ 및 SiO$_2$상(phase)으로 재결정한다.