• Korean Chemical Engineering Research
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• 제44권3호
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• pp.284-288
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• 2006

분무열분해법을 이용하여$(Ca,Sr)_{2-y}MgSi_2O_7:Eu^{2+}{_y}$ 형광체 분말을 제조하고 $Eu^{2+}$의 농도, 후열처리온도 변화 및 Ca/Sr 비에 따른 발광특성을 조사하였다. 또한, Ca/Sr의 비를 변화시켜 발광특성의 변화를 관찰하였다. $Ca_2MgSi_2O_7$나 $Sr_2MgSi_2O_7$ 분말 모두 $1,000^{\circ}C$ 이상의 온도에서 열처리를 했을 때 순수한 정방정계 상이 제조되었다. $Ca_2MgSi_2O_7:Eu^{2+}{_y}$ 녹색 형광체는 $Eu^{2+}(y)$의 농도가 5 mol％, 후열처리 온도가 $1,250^{\circ}C$ 일 때 가장 높은 발광 강도는 보였다. ${(Ca_{1-x},Sr_x)}_{1.95}MgSi_2O_7:{Eu^{2+}}_{0.05}$의 발광 파장은 Sr의 농도가 증가함에 따른 결정장 감소로 인해 524nm에서 456nm로 점진적으로 blue shift 되었다. $Sr_2MgSi_2O_7:Eu^{2+}$는 Sr 자리에 약 10 mol％ Ca를 치환시킴으로써 청색 형광체의 발광 강도는 크게 향상되었다. 제조된 분말들은 치밀하지 못하고 다공성 구조를 가져 후열처리 전에는 구형을 유지하였으나 열처리($900{\sim}1,300^{\circ}C$) 후에는 구형의 형상을 잃고 입자들 간의 응집이 발생하였다.

• 한국재료학회지
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• 제24권12호
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• pp.658-662
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• 2014

$Eu^{2+}/Dy^{3+}$-doped $Sr_2MgSi_2O_7$ powders were synthesized using a solid-state reaction method with flux ($NH_4Cl$). The broad photoluminescence (PL) excitation spectra of $Sr_2MgSi_2O_7:Eu^{2+}$ were assigned to the $4f^7-4f^65d$ transition of the $Eu^{2+}$ ions, showing strong intensities in the range of 375 to 425 nm. A single emission band was observed at 470 nm, which was the result of two overlapping subbands at 468 and 507 nm owing to Eu(I) and Eu(II) sites. The strongest emission intensity of $Sr_2MgSi_2O_7:Eu^{2+}$ was obtained at the Eu concentration of 3 mol%. This concentration quenching mechanism was attributable to dipole-dipole interaction. The $Ba^{2+}$ substitution for $Sr^{2+}$ caused a blue-shift of the emission band; this behavior was discussed by considering the differences in ionic size and covalence between $Ba^{2+}$ and $Sr^{2+}$. The effects of the Eu/Dy ratios on the phosphorescence of $Sr_2MgSi_2O_7:Eu^{2+}/Dy^{3+}$ were investigated by measuring the decay time; the longest afterglow was obtained for $0.01Eu^{2+}/0.03Dy^{3+}$.

• 한국분말재료학회지
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• 제15권5호
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• pp.399-404
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• 2008

Spray pyrolysis was applied to prepare $M_{3}MgSi_{2}O_{8}:Eu^{2+}$ (M=Ca, Sr, Ba) blue phosphor powder. The library of a Ca-Sr-Ba ternary system was obtained by a combinatorial method combined with the spray pyrolysis in order to optimize the luminescent property under vacuum ultraviolet (VUV) excitation. 10 potential compositions were chosen from the first screening. The emission shifted to longer wavelength as Ca became a dominant element and the emission intensity was greatly reduced in the composition region at which Ba is dominant element. On the base of the first screening result, the second fine tuning was carried out in order to optimize the luminescence intensity under VUV excitation. The optimal composition for the highest luminescence intensity was $(Ca_{1.7},\;Sr_{0.3},\;Ba_{1.0})Si_{2}O_{8}:Eu^{2+}$ which had the color coordinate of (0.152, 0.072) and about 64% emission intensity of $BaMgAl_{10}O_{17}$ (BAM) phosphor.

• Bulletin of the Korean Chemical Society
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• 제17권7호
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• pp.621-625
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• 1996

A variety of metal oxides were coated by sol-gel process from their metal alkoxides on the ribbons of Co-based and Fe-based amorphous alloys, and the effects of surface oxide coating on the magnetic properties of the alloy are investigated. The core loss is found to be reduced significantly by the oxide coating, the loss reduction becoming more prominent at higher frequencies. The shape of the hystersis loop is also dependent upon the kind of the coated metal oxide. The coatings of MgO, SiO2, MgO·SiO2 and MgO·Al2O3 induce tensile stress into the Fe-based ribbon whereas those of BaO, Al2O3, CaO·Al2O3, SrO·Al2O3 and BaO·Al2O3 induce compressive stress. These results may be explained by the modification of domain structures via magnetoelastic interactions with the shrinkage stress induced by the sol-gel coating.

• 한국재료학회지
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• 제20권7호
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• pp.370-373
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• 2010

In fabricating plasma display panels, the photolithographic process is used to form patterns of barrier ribs with high accuracy and high aspect ratio. It is important in the photolithographic process to control the refractive index of the photosensitive paste. The composition of this paste for photolithography is based on the $B_2O_3-SiO_2-Al_2O_3$ glass system, including additives of alkali oxides and rare earth oxides. In this work, we investigated the density, structure and refractive index of glasses based on the $B_2O_3-SiO_2-Al_2O_3$ system with the addition of $Li_2O$, $K_2O$, $Na_2O$, CaO, SrO, and MgO. The refractive index of the glasses containing K2O, Na2O and CaO was similar to that of the [BO3] fraction while that of the SrO, MgO and Li2O containing glasses were not correlated with the coordination fraction. The coordination number of the boron atoms was measured by MAS NMR. The refractive index increased with a decrease of molar volume due to the increase in the number of non-bridging oxygen atoms and the polarizability. The lowest refractive index (1.485) in this study was that of the $B_2O_3-SiO_2-Al_2O_3-K_2O$ glass system due to the larger ionic radius of $K^+$. Based on our results, it has been determined that the refractive index of the $B_2O_3-SiO_2-Al_2O_3$ system should be controlled by the addition of alkali oxides and alkali earth oxides for proper formation of the photosensitive paste.

• Transactions on Electrical and Electronic Materials
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• 제7권2호
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• pp.67-71
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• 2006

In this paper, we have investigated the structure and dielectric properties of the $(Ba_{0.6}Sr_{0.4})TiO_3$ (BST) thin films fabricated on MgO(100)/Si substrate by an alkoxide-based sol-gel method. Both the structure and morphology of those films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). For the MgO(100)/Si substrate, the BST thin films exhibited highly (100) orientation. The highly (100)-oriented BST thin films showed high dielectric constant, tunability, and figure of merit (FOM). The dielectric constant, dielectric loss and tunability of the BST thin films annealed at $700^{\circ}C$ deposited on the MgO(100)/Si substrate measured at 10 kHz were 515.9, 0.0082, and 54.3%, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.565-568
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• 2008

In this study, a blue-emitting $Sr_2MgSi_2O_7:Eu^{2+}$ (SMS) phosphor for white light-emitting diodes is reported. Through transition of $4f{\rightarrow}5d$ in $Eu^{2+}$, SMS showed a strong blue emission under UV excitation. Additionally, the variation of emission wavelength of SMS is explained by crystal field effect and is supported by rietveld refinement.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.43-46
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• 2002

Ferroelectric Mg-doped SBT and Ti-doped SBT were successfully deposited on Pt/Ti/$SiO_2/Si$ substrate by using a sol-gel solution coating method. The solutions were prepared through out adding the metal alkoxide solutions to SBT solution. The typical hysteresis loop of the films was obtained at 5V. The measured $2P_r$ value were $16.50{\mu}C/cm^2$ for SBT, $18.98{\mu}C/cm^2$ and for Mg-doped SBT, and $17.10{\mu}C/cm^2$ for Ti-doped SBT at an applied voltage of 5V, respectively. And it is found that the leakage current densities are less than $10^{-7}A/cm^2$ when applied voltage is less than 10.8MV/cm, which indicates the excellent insulating characteristics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.22-25
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• 2002

In this paper, we deposited MgO buffer layer on p-type (100)Si substrate in the condition of substrate temperature 400$^{\circ}C$, working gas ratio Ar:O$_2$=80:20, RF Power 50W, working pressure 10mtorr, and the thickness of the film was about 300${\AA}$. Then we deposited Ba$\sub$0.5/Sr$\sub$0.5/TiO$_3$ thin film using RF Magnetron sputtering method on the MgO/Si substrate in various RF power of 25W, 50W, 75W. The film deposited in 50W showed the best crystalline from the XRD measurement. To know the electrical properties of the film, we manufactured Al/BSTMgO(300${\AA}$)/Si/Al structure capacitor. In the result of I-V measurement, The leakage current density of the capacitor was lower than 10$\^$-7/A/$\textrm{cm}^2$ at the range of ${\pm}$150kV/cm. From C-V characteristics of the capacitor, can calculate the dielectric constant and it was 305. Finally we deposited BST thin film on bare Si substrate and (100)MgO substrate in the same deposition condition. From the comparate of the properties of these samples, we found the properties of BST thin film which deposited on MgO/Si substrate were better than on bare Si substrate and similar to on MgO substrate.

• 암석학회지
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• 제12권3호
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• pp.119-134
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• 2003

육십령 복운모화강암은 광물학$.$지화학적으로 과알루미나 성질을 특징적으로 나타낸다. 육십령 화강암체는 1.15∼l.20 범위의 높은 알루미나 포화 지수와 2.20∼2.98wt% 범위의 높은 CIPW norm 강옥 함량을 나타낸다. 색지수는 <16%이고, FeO$^{T}$ +MgO+TiO$_2$,는 평균 1.9 wt%로서 우백질화강암에 해당한다. 육십령 복운모 우백질화강암은 SiO$_2$성분이 증가함에 따라, TiO$_2$, $Al_2$O$_3$, FeO, Fe$_2$O$_3$, MgO, CaO, $K_2$O, P$_2$O$_{5}$ , Rb, Ba, Sr 은 감소하는 경향을 나타내는 반면, Zr과 Th는 증가하는 경향을 나타내는데, 이는 장석, 흑운모, 인회석 저어콘의 분별경정작용에 기인한 것으로 해석된다. 거정질 암맥에는 SiO$_2$and P$_2$O$_{5}$ 는 높게, 그 외의 주원소는 결핍되어 나타난다. Manaslu, Hercynian 복운모 우백질화강암, Lachlan습곡대의 S-형 화강암과 비교해 보면, 육십령 복운모 우백질화강암은 낮은 Rb, 높은 Ba, Sr을 나타낸다. 거정질 암맥의 지화학적 특징은 육십령 복운모화강암을 형성했던 멜트로부터 일부 원소들의 제거 혹은 유동성에 의해 높은 Rb, Nb와, 낮은 Ba, Sr, Zr, Th, Pb 함유를 나타낸다. 육십령 복운모 우백질화강암은 총 휘토류 함량이 95.7∼123.3ppm 범위를 나타내며, 운석에 대해 표준해보면, 저 내지 중정도의 Eu 이상(Eu/Eu＊= 0.7∼0.9)을 가지면서 경희토류원소가 풍부하고 중희토류원소가 결핍된 매우 경사가 져 있는((La/Yb)$_{N}$ = 6.9∼24.8) 변화를 보여준다. 반면에 페그마틱 암맥은 총 휘토류원소의 함량이 7.0ppm으로 운석에 대해 표준화하면, 강한 부의 Eu 이상(Eu/Eu＊= 0.2)을 가진 편평한 양상을 나타낸다. 복운모 우백질화강암을 형성했던 멜트의 성분은 기원암 뿐만 아니라 기원암이 녹은 후의 잔류물질의 양에도 의존한다. 특히 CaO/$Na_2$O의 비와 Rb/Sr-Rb/Ba의 비들은 강한 과알루미나질 화강암에서는 기원암의 성분에, 즉, 기원암의 사장석과 점토 함량 비에 주로 의존한다. 육십령 복운모 우백질화강암은 사장석 성분보다 점토 성분이 풍부한 암석에서 기원한 Manaslu와 Hercynian 복운모 우백질화강암들(예를 들면 Millevaches와 Gueret)보다는 더 높은 CaO/$Na_2$O의 비와 더 낮은 Rb/Sr-Rb/Ba 비를 나타내고 있는데, 이러한 지화학적 특징은 점토 성분보다는 사장석이 풍부한 석영장석질 암석으로부터 기원했던 것으로 사료된다.