• Title/Summary/Keyword: $SrZrO_3$

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Preparation and characterization of new perovskite compounds $(Na_{0.5}Sr_{0.5})(M_{0.5}N_{0.5})O_3$(MTi,Zr N=Ta,Nb)

  • Chung, Hoon-Taek;Tetsuro Nakamura;Mitsuru Itoh
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1997.06a
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    • pp.49-51
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    • 1997
  • New complex perovskite compounds (Na0.5Sr0.5)(Ti0.5Nb0.5)O3, (Na0.5Sr0.5)(Zr0.5Ti0.5)O3 and (Na0.5Sr0.5)(Ti0.5Ta0.5)O3 have been prepared. The crystal structures of these compounds were determined by powder X-ray Rietveld analysis. The crystal structure of (Na0.5Sr0.5)(Ti0.5Nb0.5)O3 and (Na0.5Sr0.5)(Zr0.5Ta0.5)O3 was Pmmn, and that of (Na0.5Sr0.5)(Ti0.5Nb0.5)O3 was I4/mmm. All these compounds showed the superstructure due to the oxygen octahedron distortion. The selected bond distances and bond angles were calculated by the OFFER. The octahedron distortion for each sample, which was measured from the bond distances and bond angles, showed the following order: (Na0.5Sr0.5)(Z0.5Ta0.5)O3> (Na0.5Sr0.5)(Ti0.5Nb0.5)O3 > (Na0.5Sr0.5)(Ti0.5Ta0.5)O3. Dielectric properties were measured for the samples. In this study, the crystal structure and dielectric properties of the new complex perovskite structures and discussed.

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Resistance Modulation of $\textrm{LaCoO}_{3}$ by Ferroelectric Field Effect in $\textrm{LaCoO}_{3}/\textrm{Pb(Zr,Ti)O}_{3}/\textrm{(La,Sr)CoO}_{3}$ Heterostructures ($\textrm{LaCoO}_{3}/\textrm{Pb(Zr,Ti)O}_{3}/\textrm{(La,Sr)CoO}_{3}$다층구조에서의 강유전체 전계효과에 의한 LaCoO$_{3}$의 전항변조)

  • Kim, Seon-Ung;Lee, Jae-Chan
    • Korean Journal of Materials Research
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    • v.7 no.12
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    • pp.1058-1062
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    • 1997
  • 강유전체 전계효과를 관찰하기 위해 LaCoO$_{3}$/Pb(Zr, Ti)O$_{3}$(La, Sr)CoO$_{3}$ 다층구조를 LcOo$_{3}$가 기판 위에 pulsed laser deposition(PLD)법으로 에피택셜하게 성장시켰다. 이러한 다층구조에서는 전도성 채널층으로 Si대신 반도성 LaCoO$_{3}$가 사용 되었다. LaCoO$_{3}$(LCO)의 비저항은 산소 분위기에 의하여 변화되었는데 특히 증착시 산소 분위기에 의존함을 보였다. LCO의 비저항은 0.1-100Ωcm범위에서 변화되었다. LCO층에 유도되는 강유전체 전계효과는 Pb(Zr, Ti)O$_{3}$(PZT)의 분극 상태에 따른 LCO의 저항 변화를 측정함으로써 관찰되었는데 1020$\AA$ 두께를 가진 LCO층에서는 4%의 저항 변화를 얻었으며 680$\AA$의 LCO에서는 9%의 증가된 저항 변화를 얻었다. DC 바이어스(-5V)를 가한 후에는 저항 변화가 45%까지 증가하였다. 이러한 결과는 적당한 비저항을 갖는 LCO를 사용한 LCO/PZT/LSCO다층구조가 강유전체 전계효과 트랜지스터로 사용될 수 있다는 가능성을 제시하고 있다.

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Proton Conduction in Y2O3-doped SrZrO3 (Y2O3가 도핑된 SrZrO3에서의 프로톤전도도)

  • 백현덕
    • Journal of the Korean Ceramic Society
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    • v.39 no.7
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    • pp.635-641
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    • 2002
  • Electrical conduction of $SrZrO_3$ doped with $Y_2O_3$ was measured as a function of gas atmosphere and temperature by impedance spectroscopy. Hydrogen dissolution, due to an enhanced driving force in the presence of oxygen, results in protonation by water incorporation. Proton conductivity increased with water vapor pressure, ${P_w}^{1/2}$. In the pure hydrogen atmosphere, the dissolution of hydrogen,$H_2(g)=2H_{i}$ +2e', is supposed to be driven by a reduced activity of electrons, ascribable to their trapping in oxygen vacancies. The activation energy of electrical conductivity was 50 kJ/mol, in wet argon atmosphere in the temperature range of $600~900^{\circ}C$, similar to those reported for proton conduction in the literature. Grain boundary effect in proton conduction was substantial in the 10% doped case at temperatures lower than $700^{\circ}C$.

Properties of MTiO3 (M = Sr, Ba) and PbM'O3(M'= Ti, Zr) Superlattice Thin Films Fabricated by Laser Ablation

  • Lim, T.M.;Park, J.Y.;Han, J.S.;Hwang, P.G.;Lee, K.H.;Jung, K.W.;Jung, D.
    • Bulletin of the Korean Chemical Society
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    • v.30 no.1
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    • pp.201-204
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    • 2009
  • $BaTiO_3/SrTiO_3$ and $PbTiO_3/PbZrO_3$ superlattice thin films were fabricated on $Pt/Ti/SiO_2/Si$ substrate by the pulsed laser deposition process. The morphologies and physical properties of deposited films were characterized by using X-ray diffractometer, HR-SEM, and Impedance Analyzer. XRD data and SEM images of the films indicate that each layer was well deposited alternatively in the superlattice structure. The dielectric constant of $BaTiO_3/SrTiO_3$ superlattice thin film was higher than that of individual $BaTiO_3$ or $SrTiO_3$ film. Same result was obtained in the $PbTiO_3/PbZrO_3$system. The dielectric constant of a superlattice film was getting higher as the number of layer is increased.

Electrical Conduction in Y2O3-doped SrZrO3-metal Electrode System (Y2O3가 도핑된 SrZrO3-금속전극계의 전기전도 특성)

  • Baek, Hyun-Deok;Lee, Poong-Hun
    • Journal of the Korean Ceramic Society
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    • v.39 no.4
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    • pp.367-376
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    • 2002
  • Electrical conduction in $SrZr_{1-x}Y_xO_{3-\delta}$((x=0.05, 0.10)-metal electrode system was investigated by impedance spectroscopy and two-probe d.c. conductivity measurement. Electrode conductivity in anodic direction varies with $P_W^{1/2}$( and that in cathodic direction with $P_{O2}^{1/4}$ in oxidizing atmosphere. In hydrogen atmosphere, the addition of water vapor increased the electrode conductivity both in anodic and cathodic direction. Increasing dopant concentration from 5 to 10% showed a more than four times increase in anodic conduction as well as bulk conduction of the solid electrolyte. This observation implies that unfilled oxygen vacancy concentration increases rapidly as the dopant content increases in humid atmosphere. The activation energy of cathodic conduction in Pt and Ag electrode was nearly same below $800^{\circ}C$ which means the rate of cathodic reaction is determined by the reaction in the electrolyte surface rather than on the metal electrodes.

Ferroelectric Properties of Hetero-Junction SrBi$_2Ta_2O_9$/Pb(Zr,Ti)O$_3$ (이종접합 SrBi$_2Ta_2O_9$/Pb(Zr,Ti)O$_3$박막 케패시터의 강유전 특성)

  • 이광배;김종탁
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.04a
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    • pp.217-221
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    • 1997
  • We have investigated the ferroelectric properties of multi-layered SrBi$_2$Ta$_2$$O_{9}$Pb(Zr,Ti)O$_3$, SBT/PZT, thin film capacitors. Specimens were prepared onto Pt-coated Si wafer by sol-gel method. Ferroelectric properties of these finns could be obtained only for thin SBT layers below 50nm in thickness. The values of dielectric constant and remnant polarization depend mainly on the thickness of SBT layer, which arises from the paraelectric interface layer between SBT and PZT due to the thermal diffusion of Pb. The value of remnant poarization of PZT/SBT is greater than that of SBT, and the plarization fatigue behaviors of PZT/SBT/Pt capacitors are somewhat improved as compared with those of PZT/Pt.t.

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