• Title/Summary/Keyword: $SrTiO_2$

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Piezoelectric Properties of Pb-free Bi(Na,K)$TiO_3-SrTiO_3$ Ceramics with the Amount of $CeO_2$ Addition ($CeO_2$첨가에 따른 무연 Bi(Na,K)$TiO_3-SrTiO_3$ 세라믹스의 압전특성)

  • Lee, Hyun-Seok;Yoo, Ju-Hyun;Park, Chang-Yub;Jeong, Yeong-Ho;Hong, Jae-Il;Im, In-Ho;Yoon, Hyun-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.590-594
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    • 2004
  • In this study, lead-free piezoelectric ceramics were investigated for pressure sensor applications as a function of the amount of $CeO_2$ addition at Bi(Na,K)$TiO_3-SrTiO_3$ system. With increasing the amount of $CeO_2$ addition, the density and dielectric constant increased. Electromechanical coupling factor($k_p$) showed the maximum value(kp, 0.39) at 0.1wt% $CeO_2$ addition and decreased above 0.1wt% $CeO_2$ addition., Density, dielectric constant(${\varepsilon}_r$) increased but mechanical quality factor(Qm), piezoelectric constant(d33) decreased in $CeO_2$ addition, respectively.

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Structure and electrical properties of $BaTiO_3$ System Array Thick Films for Infrared Detector Device (적외선 감지 소자를 위한 $BaTiO_3$계 어레이 후막의 구조 및 전기적 특성)

  • Noh, Hyun-Ji;Nam, Sung-Pill;Lee, Sung-Gap;Kim, Dae-Yeong;Bae, Seon-Gi;Lee, Young-Hie
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.180-181
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    • 2009
  • $(Ba_{0.6},Sr_{0.3}Ca_{0.1})TiO_3$ powders, which were prepared by sol-gel method using a solution of Ba-acetate, Sr-acetate and Ca-acetate and Ti iso-propoxide, $(Ba_{0.6},Sr_{0.3}Ca_{0.1})TiO_3$ array thick films doped with 0.1 mol% $MnCO_3$ and $Yb_2O_3$ (0.1~0.7 mol%) were fabricated by the screen printing method on the alumina substrate. And the structural and electrical properties as a function of $Yb_2O_3$ amount were investigated. The thickness of all (Ba,Sr,Ca)$TiO_3$ thick films was approximately 60mm. The Curie temperature of doped with 0.1 mol% $Yb_2O_3$ specimen was $45^{\circ}C$, and the dielectric constant and at this temperature was 1062.

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Electric Properties of $LiCO_3$ doped $(Ba_{0.5}Sr_{0.5})TiO_3$ Thick Films ($LiCO_3$가 첨가된 $(Ba_{0.5}Sr_{0.5})TiO_3$ 후막의 전기적 특성)

  • Nam, Sung-Pill;Park, In-Gil;Lee, Sung-Gap;Bae, Seon-Gi;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2006.07c
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    • pp.1432-1433
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    • 2006
  • $Li_{2}CO_3$ doped $Ba_{0.5}Sr_{0.5}TiO_3$ ceramics were fabrication by sol-gel method. Sintering temperature must be suited to the LTCC technology. Structure and dielectric properties were investigated for effect of $Li_{2}CO_3$ dopants at BST. Structure of $Li_{2}CO_3$ doped $Ba_{0.5}Sr_{0.5}TiO_3$ ceramics were dense and homogeneous with almost no pore. Relative permittivity was decreased and dielectric loss was increased with increasing $Li_{2}CO_3$ doping rations. In the case of the 3wt% $Li_{2}CO_3$ doped $Ba_{0.5}Sr_{0.5}TiO_3$ ceramics sintered at $900^{\circ}C$, relative permittivity and dielectric loss were 907 and 0.003 at 100 kHz.

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Influences of ${Nb_2}{O_5}$ and MnO Addition on the Electrical Properties of ${Pb_{0.6}}{Sr_{0.4}}{TiO_3}$Semiconducting Ceramics (${Nb_2}{O_5}$와 MnO 첨가가 ${Pb_{0.6}}{Sr_{0.4}}{TiO_3}$ 반도체 세라믹의 전기적 특성에 미치는 영향)

  • Moon, Jung-Ho;Kim, Keon;Kim, Seong-Ho;Kim, Yoon-Ho
    • Journal of the Korean Ceramic Society
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    • v.37 no.10
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    • pp.968-974
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    • 2000
  • Nb$_2$O$_{5}$와 MnO 첨가에 따른 Pb$_{0.6}$Sr$_{0.4}$TiO$_3$반도체 세라믹의 미세구조와 전기적 특성은 유전특성, I(current)-V(voltage) 측정, 그리고 복소 임피던스 측정 등을 이용하여 고찰하였다. Nb 도핑량이 0.4 mol% 이하인 경우 Nb 도핑량에 따라 전도성과 입성장은 증가되었으나 그 이상의 도핑량에서는 Sr이나 Pb 공공의 생성으로 인하여 전도성이 감소되고 입성장도 억제되는 것을 관찰할 수 있었다. 0.4 mol% Nb-doped Pb$_{0.6}$Sr$_{0.4}$TiO$_3$에 0.01 mol% MnO를 첨가한 경우 비저항비($ ho$$_{max}$/$\rho$/min/)가 $10^2$에서 $10^4$으로 크게 향상되었다. 그리고 전이 온도 주변에서 여러 개의 변곡점을 지니는 비옴성 거동이 발견되었다. 이와 같은 현상은 입계에 존재하는 Mn 이온이 부분적으로 편석되어 표면 전하의 보상 효과에 영향을 미치는 것이라고 사료된다.

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Fabrication and Resistance Characteristics of Smart Paint for Temperature Sensor (온도 센서를 위한 스마트 페인트 제작 및 저항 특성)

  • Ahn, Ju-Hun;Lee, Chang-Yull
    • Journal of Aerospace System Engineering
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    • v.13 no.2
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    • pp.43-50
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    • 2019
  • Satellite and aircraft components are greatly affected by the possibility for missions and safety due to temperature effects. In the field of fuel cells, research is actively carried out for UAV. For the efficiency and stability of the fuel cells, the temperature for operations must be confirmed. In this paper, a smart paint was fabricated with $BaTiO_3$ and $SrTiO_3$ ceramics in order to take advantage of the rapid characteristics of the PTC thermistor, which is the resistance changes abruptly above the Curie point. A coating agent was prepared to prevent the paint from peeling off the samples and the coated models were checked for resistance changes. Moreover, the resistance change of the $BaTiO_3$ and $SrTiO_3$ with temperature conditions was measured before and after coating.

The Effect of Grain Boundary Diffusion on the Boundary Structure and Electrical Characteristics of Semiconductive $SrTiO_3$ Ceramics (입계확산에 의한 반도성 $SrTiO_3$ 세라믹스의 입계구조 및 전기적 특성 변화)

  • 김태균;조남희
    • Journal of the Korean Ceramic Society
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    • v.34 no.1
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    • pp.23-30
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    • 1997
  • Semiconductive SrTiO3 ceramic bodies were prepared by conventional ceramic powder processes in-cluding sintering in a reducing atmosphere. Sodium or potassium ions were diffused from the surface of the sintered bodies into the inner region using thermal diffusion process at 800-120$0^{\circ}C$. The effects of such ther-mal treatments on the electrical and chemical characteristics of the grain boundaries were investigated. The presence of sodium or potassium ions at grain boundaries produces non-linear current-voltage behaviors, electrical boundary potential barriers of 0.1-0.2eV, and threshold voltages of 10-70V. The diffused ions form diffusion layers with thicknesses of 20-50nm near the grain boundaries, reducing the concentration of strontium and oxygen.

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Dependence of LaAlO3/SrTiO3 Interfacial Conductivity on the Thickness of LaAlO3 Layer Investigated by Current-voltage Characteristics (LaAlO3 두께에 따른 LaAlO3/SrTiO3 계면에서의 전류-전압 특성을 이용한 전도성 변화 연구)

  • Moon, Seon-Young;Baek, Seung-Hyub;Kang, Chong-Yun;Choi, Ji-Won;Choi, Heon-Jin;Kim, Jin-Sang;Jang, Ho-Won
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.8
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    • pp.616-619
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    • 2012
  • Oxides possess several interesting properties, such as ferroelectricity, magnetism, superconductivity, and multiferroic behavior, which can effectively be used oxide electronics based on epitaxially grown heterostructures. The microscopic properties of oxide interfaces may have a strong impact on the electrical transport properties of these heterostructures. It was recently demonstrated that high electrical conductivity and mobility can be achieved in the system of an ultrathin $LaAlO_3$ film deposited on a $TiO_2$-terminated $SrTiO_3$ substrate, which was a remarkable result because the conducting layer was at the interface between two insulators. In this study, we observe that the current-voltage characteristics exhibit $LaAlO_3$ thickness dependence of electrical conductivity in $TiO_2$-terminated $SrTiO_3$. We find that the $LaAlO_3$ layers with a thickness of up 3 unit cells, result in highly insulating interfaces, whereas those with thickness of 4 unit cells and above result in conducting interfaces.

Study on the Preparation and Characteristics of $(Pb_{1-x}Sr_x)TiO_3$ Thin Films by the Sol-gel Process (졸-겔법을 이용한 $(Pb_{1-x}Sr_x)TiO_3$ 박막의 제조 및 특성에 관한 연구)

  • 선계혁;윤희한;황규석;김병훈
    • Journal of the Korean Ceramic Society
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    • v.33 no.11
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    • pp.1195-1202
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    • 1996
  • To prepare the dielectric thin films of (Pb1-xSrx)TiO3 (x=0.1, 0.2, 0.3, 0.35, 0.5) by the sol-gel process titanium (IV) isopropoxide (Ti[OCH(CH3)2]4) and Pb Sr, acetate were used therefore the thin films were fabricated by dip-coating method. Stability of the sol decreased with addition of Sr content thin films could be fabricated up to 35mol% Over this range precipitation of sol occured thin films couldn't be obtained. Transmittance of thin films at visible range decreased with the increase of heat-treatment temperature but exhibited transmit-tance above 60% in all case. Moreover transmittance of thin films at visible range slightly increased with of addition of Sr,. When thin film containing 30 mol% srontium was heated at 600℃ the best perovskite phase was obtained. The dielectric constant (ε) was 280 and dielectric loss factor (tan δ) was 0.021 and curie tempera-ture (Tc) decreased with the increase of addition of Sr.

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Dielectric properties of ($Sr_{0.50}Pb_{0.25}Ba_{0.25}$)$TiO_3$-$Bi_2$$Ti_3$$O_{9}$ ceramics for the high-voltage capacitor (고전압 캐패시터용 ($Sr_{0.50}/$Pb_{0.25}$/$Ba_{0.25}$)$TiO_3$-$Bi_2$$Ti_3O_{9}$ 세라믹의 유전특성)

  • 김세일;정장호;이영희;배선기
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1993.11a
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    • pp.17-20
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    • 1993
  • In this paper, the (1-x)($Sr_{0.50}$$Pb_{0.25}$$Ba_{0.25}$)$TiO_3$-x $Bi_2$$Ti_3$$O_{9}$(x=0,4,6,8[mol.%]) ceramics with paraelectric properties were, fabricated by mixed oxide method. The dielectric and structural properties of ceramics were studied with sintering temperature and addition of $Bi_2Ti_3O_{9}$, and the application for the high - voltage capacitor was investigated. In the specimens with sintering at 1350[$^{\circ}C$], sintered density was showed the highest value of 5.745[g/cm$^3$]. Increasing of sintering temperature, average grain size was increased. The specimen. ($Sr_{0.50}$$Pb_{0.25}$$Ba_{0.25}$)$TiO_3$sintered at 1350[$^{\circ}C$] showed good dielectric properties and breakdown voltage was showed the highest value of 200[kV]. Temperature coefficient of capacitance was stabilized in specimens added $Bi_2Ti_3O_{9}$ Sintered density. dielectric properties and breakdown voltage ware decreased with increasing the contents of $Bi_2Ti_3O_{9}$.

Establishment of Preparation Conditions for High-Tc Superconducting Y-Ba-Cu-O Thin Film by Chemical Vapor Deposition (화학증착법에 의한 고온 초전도 Y-Ba-Cu-O 박막의 제조 조건 확립에 관한 연구)

  • Park, Joung-Shik;Cho, Ik-Joon;Kim, Chun-Yeong;Lee, Hee-Gyoun;Won, Dong-Yeon;Shin, Hyung-Shik
    • Applied Chemistry for Engineering
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    • v.3 no.3
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    • pp.412-421
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    • 1992
  • The superconducting thin films have shown a growing possibility for practical application in microelectronic fields in recent years. In this study, the high Tc superconducting Y-Ba-Cu-O thin films were prepared on various substrates by chemical vapor deposition method using organic metal chelates of $Y(thd)_3$, $Ba(thd)_2$, and $Cu(thd)_2$ as source materials. The deposition reactions were carried out on single crystalline MgO(100), YSZ(100), $SrTiO_3(100)$, and polycrystalline $SrTiO_3$ substrates. Deposition thickness of thin films was linearly increased with the increase of deposition time. It turned out that the Y-Ba-Cu-O thin films on MgO(100), YSZ(100), and $SrTiO_3(100)$ single crystal substrates showed superconductivities above liquid nitrogen temperature($T_{c,onset}=87{\sim}89K$, $T_{c,zero}=85{\sim}86K$), but the one on polycrystalline $SrTiO_3$ substrate did not.

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