• Bulletin of the Korean Chemical Society
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• v.33 no.10
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• pp.3407-3412
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• 2012

The Ti incorporation at Fe-site in the double perovskite lattice of $Sr_2FeNbO_6$ (SFNO) system is studied. The Ti concentration optimization yielded an efficient photocatalyst. At an optimum composition of Ti as x = 0.07 in $Sr_2Fe_{1-x}Ti_xNbO_6$, the photocatalyst exhibited 2 times the quantum yield for photolysis of $H_2O$ in presence of $CH_3OH$, than its undoped counterpart under visible light (${\lambda}{\geq}420nm$). Heavily Ti-doped $Sr_2Fe_{1-x}Ti_xNbO_6$ lattice exhibited poor photochemical properties due to the existence of constituent impurity phases as observed in the structural characterization, as well as deteriorated optical absorption. The higher electron-density acquired by n-type doping seem to be responsible for the more efficient charge separation in $Sr_2Fe_{1-x}Ti_xNbO_6$ (0.05 < x < 0.4) and thus consequently displays higher photocatalytic activity. The Ti incorporated structure also found to yield stable photocatalyst.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.162-162
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• 2003

최근에 산화물 인공격자의 우수한 특성으로 인하여 활발한 연구가 진행되고 있다. 본 연구에서는 펄스레이저 증착방법을 이용하여 산소분압 100mTorr, $650^{\circ}C$에서 LSCO/MgO 기판위에 La-50mol% 첨가된 SrTiO$_3$ (SLTO)와 SrTiO$_3$ 를 적층시켜 산화물 인공격자를 만들어 결정구조에 대하여 연구하였다. SrTiO$_3$ (STO)는 상온에서 3.904$\AA$인 cubic perovskite 구조를 가지고 있다. 일반적으로 La$^{3+}$ (1.14$\AA$)은 Sr$^{2+}$(1.12$\AA$)과 이온반경이 거의 유사하기 때문에 ABO 페로브스카이트 구조의 A자리에 치환될 것으로 기대되며 또한 Sr$^{2+}$ 자리에 La$^{3+}$ 가 치환되므로써 발생하는 charge compensation은 Sr 자리에 Vacancy 생성으로 판단된다. 인공격자의 성장확인을 위하여 SLTO와 STO를 10층씩 증착하여 XRD분석을 통하여 평가하여 보았다. 확인된 결과를 바탕으로 산화물 인공격자의 적층 주기를 SLTO layer를 한층으로 고정시키고 STO를 한 층에서 다섯 층까지 다양하게 변화시켰다. 본 연구의 목적은 산화물 인공격자에서 결정결함을 제어하여 소자에 응용할 수 있는 전기적 물성을 평가하기 위함이다. X-ray diffraction 결과 SLTO/STO 인공격자는 (001) 방향으로 우선배향하였으며 적층주기에 따라 격자상수의 변화를 보였다. AES의 depth profile 분석을 통하여 La의 분포를 확인하였으며, HRTEM 분석을 통하여 미세구조분석을 실시하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.297-297
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• 2007

The $(B_{0.5},Sr_{0.5})TiO_3$ ceramics, which added with low sintering materials $Li_2CO_3$ and ZnBO, was investigated for LTCC(low temperature co-fired ceramic) applications. To compare sintering temperature of $(B_{0.5},Sr_{0.5})TiO_3$ respectively, we added 1, 2, 3, 4, and 5wt% of $Li_2CO_3$ and ZnBO to $(B_{0.5},Sr_{0.5})TiO_3$. For confirming the sintering temperature, the respective specimens were sintered from $750^{\circ}C$ to $1200^{\circ}C$ by $50^{\circ}C$. The case of $Li_2CO_3$ greatly lowered the sintering temperature of $(B_{0.5},Sr_{0.5})TiO_3$ ($1350^{\circ}C$) below $900^{\circ}C$. The addition of ZnBO improved the loss tangent of $(B_{0.5},Sr_{0.5})TiO_3$. The crystalline structure of $LiCO_3$ doped $(B_{0.5},Sr_{0.5})TiO_3$ and ZnBO doped $(B_{0.5},Sr_{0.5})TiO_3$ was analyzed with the X-ray diffraction (XRD) analysis. The dielectric permittivity and loss tangent of $Li_2CO_3$ doped BST and ZnBO doped BST were measured with the HP 4284A precision. From the electrical characterization, we respectively obtained the dielectric permittivity 1361, loss tangent $6.94{\times}10^{-3}$ at $Li_2CO_3$ doped $(B_{0.5},Sr_{0.5})TiO_3$ (3wt%) and the dielectric constant 1180, loss tangent $3.70{\times}10^{-3}$ at ZnBO doped $(B_{0.5},Sr_{0.5})TiO_3$(5wt%).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.302-302
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• 2007

The $SrRuO_3$/Si thin film electrodes are grown with (00l) preferred orientations on SrO buffered-Si (001) substrates by pulsed laser deposition. The optimum conditions of SrO buffer layers for $SrRuO_3$ preferred orientations are the deposition temperature of $700^{\circ}C$, deposition pressure of $1\;{\times}\;10^{-6}\;Torr$, and the thickness of 6 nm. The 100nm thick-$SrRuO_3$ bottom electrodes deposited above $650^{\circ}C$ on SrO buffered-Si (001) substrates have a rms roughness of approximately $5.0\;{\AA}$ and a resistivity of 1700 -cm, exhibiting a (00l) relationship. The 100nm thick-$Pb(Zr_{0.2}Ti_{0.8})O_3$ thin films deposited at $575^{\circ}C$ have a (00l) preferred orientation and exhibit $2P_r$ of $40\;C/cm^2$, $E_c$ of 100 kV/cm, and leakage current of about $1\;{\times}\;10^{-7}\;A/cm^2$ at 1V.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.100.2-100
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• 2003

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.819-821
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• 2002

Photoluminescenc (PL) and low-voltage cathodoluminescence (CL) characteristics of $[xSrTiO_3+(1-x)Li_2TiO_3]:Pr^{3+}$ and $[xSrTiO_3+(1-x)Na_2TiO_3]:Pr^{3+}$ systems were investigated. The red luminescence intensities of these compounds are enhanced remarkably by the incorporation of $Li^+$ or $Na^+$ ion as compared to that of $SrTiO_3:Pr^{3+}$. The enhanced luminescence is speculated to result from both the charge compensation of $Pr^{3+}$ site and oxygen vacancies generated in the lattices by $Li^+$ or $Na^+$ ion.

• Journal of Magnetics
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• v.8 no.2
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• pp.89-92
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• 2003

The tunneling magnetoresistance (TMR) of a ramp-edge type junction with SrTiO$_3$barrier layer has been stud-ied. The samples with a structure of glass/NiO(600${\AA}$)/Co(100${\AA}$)/SrTiO$_3$(400 ${\AA}$)/SrTiO$_3$(20-100${\AA}$)/NiFe(100${\AA}$) were prepared by the sputtering and etched by the electron cyclotron (ECR) argon ion milling. Nonlinear I-V characteristics were obtained from a ramp-type tunneling junctions, having the dominant difference between two different external magnetic fields (${\pm}$100 Oe) perpendicular to the junction edge line. In the SrTiO$_3$ barrier thickness of 40${\AA}$, the TMR was 52.7% at a bias voltage of -50 mV The bias voltage dependence of resistance and TMR in a ramp-type tunneling junction was similar with those of the layered TMR junction.

• Korean Journal of Crystallography
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• v.14 no.2
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• pp.73-78
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• 2003

(Ba/sub 1-x/Sr/sub x/)TiO₃ (BST, 0.4< x <0.65) single crystals were successfully grown by the TSSG (Top-Seeded Solution Growth) method, using a commercial [100] SrTiO₃ or as-grown [100] BST single crystals as seed crystals. To obtain the BST single crystals with various compositions x, the Ba/sr molar ratios in the solutions were systematically controlled while the Ti ion content among all cations was fixed at 67 mol%. A linear regression curve between their x values and the molar ratios of Sr/(Ba + Sr) in the solutions could be obtained, which in turn could used to select the initial composition to produce BST crystal with an aimed x value. In addition, the isothermal growth was found more effective for obtaining a compositional uniformity than a slow cooling process.

• Membrane Journal
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• v.22 no.1
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• pp.8-15
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• 2012

Tubular $Ba_{0.5}Sr_{0.5}Co_{0.8}Fe_{0.2}O_{3-{\delta}}$ membranes with $La_{0.6}Sr_{0.4}Ti_{0.3}Fe_{0.7}O_{3-{\delta}}$ porous coating layer were prepared by extrusion and dip coating technique. XRD and SEM result showed the tubular membrane possessed the perovskite structure and porouscoating layer (thickness= about $2{\mu}m$) in surface. The oxygen permeation test was measured at condition of ambient air (feed side) and vacuum (permeate side) in the temperature range from 750 to $950^{\circ}C$. The oxygen permeation flux of $Ba_{0.5}Sr_{0.5}Co_{0.8}Fe_{0.2}O_{3-{\delta}}$ tubular membrane with $La_{0.6}Sr_{0.4}Ti_{0.3}Fe_{0.7}O_{3-{\delta}}$ porous coating layer reached maximum $3.2mL/min{\cdot}cm^2$ at $950^{\circ}C$ and was higher than non-coated $Ba_{0.5}Sr_{0.5}Co_{0.8}Fe_{0.2}O_{3-{\delta}}$ tubular membrane. Long-term stability test result indicated that the oxygen permeation flux was quite stable during the 11 day.

• Nano
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• v.13 no.11
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• pp.1850130.1-1850130.12
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• 2018

A novel strontium titanate/binary metal sulfide ($SrTiO_3/SnCoS_4$) heterostructure was synthesized by a simple two-step hydrothermal method. The visible-light-driven photocatalytic performance of $SrTiO_3/SnCoS_4$ composites was evaluated in the degradation of methyl orange (MO) under visible light irradiation. The photocatalytic performance of $SrTiO_3/SnCoS_4-5%$ is much higher than that of pure $SrTiO_3$, $SnCoS_4$, $SrTiO_3/SnS_2$ and $SrTiO_3/CoS_2$. The $SrTiO_3/SnCoS_4$ composite material with 5 wt.% of $SnCoS_4$ showed the highest photocatalytic efficiency for MO degradation, and the degradation rate could reach 95% after 140 min irradiation time. The enhanced photocatalytic activity was ascribed to not only the improvement of visible light absorption efficiency, but also the construction of a heterostructure which make it possible to effectively separate photoexcited electrons and holes in the two-phase interface.