• Journal of the Korean Ceramic Society
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• v.23 no.6
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• pp.45-51
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• 1986

$SrTiO_3$ reaction mechanism formed from $TiCl_4$ and $SrCl_2$ solution by direct-wet-process was studied. Through this study it is identified that crystalline $SrTiO_3$ is formed above pH 13.8 amorphous $SrTiO_3$ above pH7 and crystallization temperature of amorphous $SrTiO_3$ is at 37$0^{\circ}C$. the final products are composed of 60% crystalline $SrTiO_3$ and 40% amorphous $SrTiO_3$ The amorphous $SrTiO_3$ is identified with the IR absorption spectrum of Sr-Ti-O by FT-IR spectrometer. Under pH 7 gelationus metatitanate (H2TiO3) is formed from TiCl4 but above pH7 the activity by the formation of metatitnic acid ion $[TiO_3]^{2-}$ is so high that $SrTiO_3$is formed more easily through the reaction with $Sr^{2+}$.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.194-196
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• 2004

$BaTiO_3/SrTiO_3$ heterolayered thick films on the $Al_2O_3$ substrate by screen printing method with stacking periodicity. The stacking periodicity of $BaTiO_3/SrTiO_3$ heterolayer structure was varied from $(BaTi_O_3)_1/(SrTiO_3)_1$ to $(BaTi_O_3)_3/(SrTiO_3)_3$. The total thickness of the $BaTiO_3/SrTiO_3$ films was about $120{\mu}m$. There was an interdiffusion at the interface of the $BaTiO_3$ and $SrTiO_3$ layers. The dielectric constant of $BaTiO_3/SrTiO_3$ heterolayered thick films was increased with decreasing stacking periodicity of the $BaTiO_3/SrTiO_3$. The dielectric constant of the ($(BaTi_O_3)_1/(SrTiO_3)_1$ herterolayered thick films was about 1780.

• Journal of the Korean Ceramic Society
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• v.20 no.1
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• pp.43-48
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• 1983

The formation of strontium titanate from several molar $SrCO_3$ and $TiO_2$ mixtures was studied in air and $CO_2$ gas Mixtures of $SrCO_3$ and $TiO_2$ were heated in air at 400-$600^{\circ}C$ DTA-TG was used to obtain thermal histories of simples heated in air and $CO_2$ gas. X-ray diffraction analysis was used to determine both the phase composition and the amounts of each phase present. The phase relationship of various compounds $SrTiO_3$, $Sr_2TiO_4$, $Sr_2Ti_3O_7$ and $Sr_4Ti_3O_{10}$ formed by the sintering in each composition was shown by the calibration curves. High temperature X-ray analysis was used to determine both the formation process and deformation process of each products. Small amount of SrTiO3 is formed first at the surface af contact SrTiO3 reacts with $SrCO_3$ to form Sr2TiO4 this is affected on the $CO_2$ pressure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.45-48
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• 1998

A BaTiO$_3$ was annexed to SrTiO$_3$, (x)BaTiO$_3$-(1-x)SrTiO$_3$ (0.7$\leq$X$\leq$1) ceramics with stable dielectric and electrical properties in high voltage were manufactured. Structural, dielectric and electrical properties were surveyed with the contents of SrTiO$_3$. The open porosity and sintering density were excellent in 0.9BaTiO$_3$-0.1SrTiO$_3$, the grain size of 0.9BaTiO$_3$-0.1SrTiO$_3$ was maximum at 12.40[${\mu}{\textrm}{m}$]. Increasing SrTiO$_3$ mol ratio, the curie temperature was shifted low temperature and the supreme permittivity was increased. In line with increasing of supplied voltage, permitivity was decreased slightly.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.58-60
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• 2004

The $BaTiO_3/SrTiO_3$ heterolayered thick films were fabricated on alumina substrate by screening printing method. The obtained films were sintered at $1400^{\circ}C$ with bottom electrode of Pt for 2 hours. The structural and electrical properties of $BaTiO_3/SrTiO_3$ heterolayered thick films were compared with pure $BaTiO_3$ and $SrTiO_3$ films. The (Ba,Sr)$TiO_3$ phase was appeared at the $BaTiO_3/SrTiO_3$ heterolayered thick films. The thickness of $BaTiO_3/SrTiO_3$ heterolayered thick film, obtained by one printing, was about $50{\mu}m$. The dielectric constant and dielectric loss of the $BaTiO_3/SrTiO_3$ heterolayered thick films were about 1964, 5.5% at 1KHz, respectively.

• Journal of the Korean Ceramic Society
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• v.37 no.10
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• pp.1008-1013
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• 2000

SrTi $O_3$(001) 단결정 기판 위에 졸-겔 스핀코팅으로 $SrBi_2(Ta,Nb)_2O_9$ 박막을 도포하고 그 결정화 과정을 고온 X-선 회절분석 (HTXRD)으로 추적하면서 Pt(111)/Ti/ $SiO_2$/Si 위에 성장한 박막과 비교하였다. SrTi $O_3$(001) 단결정 기판 위에 도포된 $SrBi_2Nb_2O_{9}$ 박막은 fluorite-like phase와 같은 transient phase를 거치지 않고 곧바로 순수한 $SrBi_2Nb_2O_9$ 상으로 결정화가 시작되었으며 결정화가 시작되는 온도인 ${\sim}540^{\circ}C$부터 c축 배향성장하였다. 또한 $SrB i_2(Ta,Nb)_2O_9$ 박막은 Ta/Nb 비에 관계없이 $SrTiO_3$(001) 위에서 모두 $(00{\ell})$로 배향되었으며, 코팅 횟수가 늘어나 필름의 두께가 증가함에 따라 c축 배향성은 미세한 감소를 보였다. $SrBi_2Nb_2O_9/SrTiO_3$단면을 TEM으로 관찰한 결과 $SrBi_2Nb_2O_9$은 대체로 불규칙한 크기의 다결정체로 되어 있었으나 계면 부근에서는 [001]$_{SBN}$//[001]$_{SrTi}$ $O_3$/, [100]$_{SBN}$//[100]$_{SrTi}$ $O_3$/라는 결정학적 관계를 가지며 에피탁샬 성장했음을 알 수 있었다.있었다.

• Journal of the Korean Ceramic Society
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• v.21 no.2
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• pp.165-173
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• 1984

It is desirable to establish reliable synthetic methods for electro-ceramic materials. To synthesize $SrTiO_3$ in this study direct solid state reactions and wet chemical processes were used. Previous study of $SrTiO_3$ synthesis included oxalated-method($SrTiO(C_2O_4)_2$.$4H_2O$) co-precipitation$(SrCO_3+TiO(OH)_2)$ and direct solid state reaction$(SrCO_3+TiO(OH)_2)$ The methods in question lead to intermediate inclusion during the reactions and less controllable in particle sizes of $SrTiO_3$. To obtain highly pure $SrTiO_3$ so-called "direct wet process method" was added in this investigation. In the study the "direct wet process" was for the first time applied to synthesize chemically pure and fine particle $SrTiO_3$. $SrCl_2$ and $TiCl_4$<\ulcornerTEX> at KOH solution at room temperature to 10$0^{\circ}C$ precipitated $SrTiO_3$ The particle size increased as temperature increased.mperature increased.

• Journal of the Korean Ceramic Society
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• v.38 no.3
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• pp.225-230
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• 2001

저전압용 형광체로 주목받고 있는 SrTiO$_3$:Pr,Al 형광체를 고상반응법으로 제조하였다. 부활성체 Al이 23 mol% 첨가되었을 때 SrTiO$_3$:Pr 형광체는 최대 발광 강도를 보여주었다. 최대 발광 강도를 보인 형광체에 대해 제한시야회절상과 투과전자현미경을 이용하여 SrTiO$_3$:Pr,Al 적색 형광체내 2차상 형성에 대한 연구를 행하였고 또한 에너지 분산 분광 분석을 행하여 SrTiO$_3$:Pr,Al 형광체내 주입된 부활성제 Al의 함량을 결정하였다. 제한시야회절상의 결과에 의하면 SrTiO$_3$:Pr,Al 적색 형광체내에 단사정 SrAl$_2$O$_4$, 삼사정 Ti$_4$O$_{7}$, 육방정 SrAl$_{12}$O$_{19}$가 2차상으로 존재함을 보여 주었다. 에너지 분산 분광 분석 결과 부활성제 Al의 함량 중 일부는 SrTiO$_3$:Pr,Al 적색 형광체 격자에 고용되고 일부 Al은 SrAl$_{12}$O$_{19}$와 SrAl$_2$O$_4$의 2차상을 형성하는데 소모됨을 보여주었다.주었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.400-403
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• 2004

The dielectric properties of $BaTiO_3/SrTiO_3$ multilayered thick films with printing times were investigated. $BaTiO_3/SrTiO_3$ thick films were deposited by Screen-printing method on alumina substrates. The obtained films were sintered at $1400^{\circ}C$ with bottom electrode(Pt) for 2hours. The structural and the dielectric properties were investigated for various printing times. The BST phase appeared in all of the $BaTiO_3/SrTiO_3$ mutilayered thick films. The $BaTiO_3/SrTiO_3$ multilayered thick film thickness, obtained by one printings, was $50{\mu}m$. The dielectric constant and dielectric loss of the $BaTiO_3/SrTiO_3$ multilayered thick film, obtained by five printings, were about 266, 0.8% at 1Mhz, respectively.

• Journal of the Korean Ceramic Society
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• v.21 no.4
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• pp.341-348
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• 1984

$BaTiO_3$ and $SrTiO_3$ were mixed with the mole ratio of 35:65， 50:50 and 65:35 and heated at 1100~120$0^{\circ}C$ for 1~64 hours. The dielectrics of $BaTiO_3$-$SrTiO_3$ system were investigated as a function of amount of solid solution formed. The dielectric constant was increased and Curie temperature was shifted to higher temperature with increasing of heating of soaking time for the same composition and heating temperature. This can be explained by the homogeneous distribution of $Ba^{2+}$ and $Sr^{2+}$ ion in the $BaTiO_3$ system. The Curie temperature was shifted to lower temperature with increasing $SrTiO_3$ in the $BaTiO_3$-$SrTiO_3$system because of decreasing the lattice constant.