• Journal of the Korean Ceramic Society
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• v.39 no.4
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• pp.386-393
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• 2002

Fabricatio of the potassium-titanate fiber with K2O${\cdot}nTiO_2$ composition and coating of electrically conductive Sb-doped $SnO_2$ (ATO: Antimony Tin Oxide) layer on the fiber on the fiber were the fiber were the aims of this work. The fiber fabricated by slow-cooling technique showed the mean length of $15{\mu}m$ and mean diameter of $0.5{\mu}m$. Three different coating methods i.e, sol-gel, co-precipitation and urea technique, were attempted to coat the conductive ATO layer on the potassium-titanate fiber. The influences of coating method, concentrations of ATO(5∼70wt%) and Sb (0∼20wt%), temperature in the range of $450\;to\;800^{\circ}C$, number of washing (3∼4 times) on the resistivity of the ATO coated fiber were examined in details. The fiber coated ATO by coprecipitation exhibited lower resistivity of 103${\Omega}{\cdot}$cm at the 30 wt% of ATO, and showed nearly constant low value of $60{\Omega}{\cdot}cm\;to\;90{\Omega}{\cdot}$cm at the higher concentration of ATO.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.245-245
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• 2016

본 연구에서는 선형 대향 타겟 스퍼터 (Linear Facing Target Sputtering: LFTS) 시스템을 이용하여 ITO와 Ti doped $In_2O_3$ (TIO) 타겟을 Co-sputtering한 InSnTiO 투명 전극의 전기적, 광학적 특성을 연구하였다. InSnTiO 투명전극의 전기/광학적 및 구조적 특성은 Hall measurement, UV/Vis spectrometry, X-ray Diffraciton 분석법을 통해 최적화 하였고, DC power, substrate to target distance (TSD), target to target distance (TTD), ambient treatment 변수 조절을 통해 최적화된 LFTS InSnTiO 투명전극을 제작하였다. LFTS 공정을 이용한 InSnTiO 투명전극의 성막 공정 중 DC파워와 공정압력 변화에 따른 구조적, 표면적 특성 변화는 Field-Emission Scanning Electron Microscopy (FE-SEM) 과 X-ray Diffractometer (XRD) 분석을 통해 관찰하였다. 이렇게 증착된 InSnTiO 투명전극은 급속열처리 시스템으로 (Rapid Thermal Annealing system) 후열처리를 진행하여 투과도의 향상과 면저항의 감소를 확인하였다. 본 연구에서는 다양한 분석을 통해 Co-sputtering한 InSnTiO 박막의 특성과 다양한 장점을 소개한다.

• Korean Journal of Materials Research
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• v.24 no.9
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• pp.469-473
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• 2014

$SrSnO_3$ phosphor powders were synthesized with two different contents of activator ions $Eu^{3+}$ and $Tb^{3+}$ using the solid-state reaction method. The structural, morphological, and optical properties of the phosphors were investigated using X-ray diffractometry, field-emission scanning electron microscopy, and fluorescence spectrophotometry, respectively. All the phosphors showed a cubic structure, irrespective of the type and the content ratio of activator ions. For $Eu^{3+}$-doped $SrSnO_3$ phosphors, the intensity of the 620 nm red emission spectrum resulting from the $^5D_0{\rightarrow}^7F_2$ transition of $Eu^{3+}$ was stronger than that of the 595 nm orange emission signal due to the $^5D_0{\rightarrow}^7F_1$ transition in the range 0.01-0.05 mol of $Eu^{3+}$, but the ratio of the intensity was reversed in the range 0.10-0.20 mol of $Eu^{3+}$. The variation in the emission intensity indicates that the site symmetry of the $Eu^{3+}$ ions around the host crystal was changed from non-inversion symmetry to inversion. For the $Tb^{3+}$-doped $SrSnO_3$ phosphors under excitation at 281 nm, one strong green emission band at 550 nm and several weak bands were observed. These results suggest that the optimum red and green emission signals can be realized when the activator ion content for $Eu^{3+}$- or $Tb^{3+}$-doped $SrSnO_3$ phosphors is 0.20 mol and 0.15 mol, respectively.

• Journal of the Korean Ceramic Society
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• v.38 no.1
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• pp.100-105
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• 2001

An all solid-state thin film battery (TFB) was fabricated by growing, undoped and Pt-doped vanadium oxide cathode film ( $V_2$ $O_{5}$ ) on I $n_2$ $O_3$: Sn coated glass, respectively. Room temperature charge-discharge measurements based on Li/Lipon/ $V_2$ $O_{5}$ full-cell structure with a constant current clearly shows that the Pt-doped $V_2$ $O_{5}$ cathode film is superior, in terms of cyclibility. X-ray diffraction (XRD) results indicate that the Pt doping process induces a more random amorphous structure than an undoped $V_2$ $O_{5}$ film. In addition to its modified structure, the Pt-doped $V_2$ $O_{5}$ film has a smoother surface than the undoped sample. Compared to an undoped $V_2$ $O_{5}$ film, the Pt doped $V_2$ $O_{5}$ cathode film has a higher electron conductivity. We hypothesize that the addition of Pt alters electrochemical performance in a manner of making more random amorphous structure and gives an excess electron by replacing the $V^{+5}$. Possible mechanisms are discussed for the observed Pt doping effect on structural and electrochemical properties of vanadium oxide cathode films, which are grown on I $n_2$ $O_3$: Sn coated glass.

• Journal of Sensor Science and Technology
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• v.6 no.5
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• pp.369-375
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• 1997

$V_{2}O_{5}/ThO_{2}/Pd$-doped $SnO_{2}$ sensor has a good selectivity and stability to CO at high sensor temperature of about $500^{\circ}C$, and shows rapid response. In particular, many kinds of interference gases, such as $NO_{x}$, $C_{3}H_{8}$, $CH_{4}$ and $SO_{2}$ have been found to give only a slight influence on the sensor selectivity to CO gas sensitivity by doped $V_{2}O_{5}$ (3.0 wt.%). For the sensor we used well-known thick film technological route with $V_{2}O_{5}$(3.0 wt.%), Pd(1.0 wt.%) and $ThO_{2}$(l.5 wt.%) as catalytic materials. In the case of mixed $NO_{x}$-CO gases, as combustion exhaust gas, only CO detection by $SnO_{2}$ type semiconductor sensor is generally very difficult because of $NO_{x}$ interference. The developed sensors can use to measure the exhausting gas of the automobile or the boiler for the Air-to-Fuel ratio control.

• Journal of Sensor Science and Technology
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• v.17 no.4
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• pp.295-302
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• 2008

$TiO_2,\;ZrO_2$, and $SiO_2$ were added in the concentration of 1 - 3 wt.% to improve long-term stability for the $SnO2$ thick film gas sensor. Short-term sensor resistances up to 90 h were measured to investigate the stabilization time of initial resistance in air. Long-term resistance drifts in air and in gas to 5000 ppm methane for the sensors annealed at $750^{\circ}C$ for 1 h and continuously heated at an operating temperature of $400^{\circ}C$ were also measured up to 90 days at an interval of 1 day. The long-term drifts in methane sensitivity for the three metal oxide-doped $SnO2$ sensors are closely related to methane sensitivity level, catalytic activity, and long-term drift in sensor resistance in air. Those stabilities are mainly discussed in terms of oxidation state and catalytic activity.

• 한국전자현미경학회:학술대회논문집
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• 2005.05a
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• pp.59-65
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• 2005

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1496-1498
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• 1994

In this study, x PSN - y PT - z PZ ceramics doped with w $MnO_2$ were fabricated by the mixed oxide method at 1250 [$^{\circ}C$] for 2[hr] and then the dielectric and pyroelectric properties were investigated. In the 0.05 PSN - 0.4 PT - 0.55 PZ specimen with 0.5[wt%] $MnO_2$ the Pyroelectrics coefficient was $6.6{\times}10^{-8}[C/cm^2.^{\circ}C]$, respectibly.

• Journal of the Korean institute of surface engineering
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• v.44 no.4
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• pp.144-148
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• 2011

$Ga_2O_3$ doped $SnO_2$ thin films were grown by using pulsed laser deposition (PLD) technique on glass substrate. The optical and electrical properties of these films were investigated for different doping concentrations, oxygen partial pressures, substrate temperatures, and film thickness. The films were deposited at different substrate temperatures (room temperature to $600^{\circ}C$). The best opto-electrical properties is shown by the film deposited at substrate temperature of $300^{\circ}C$ with oxygen partial pressure of 80 m Torr and the gallium concentration of 2 wt%. The as obtained lowest resistivity is $9.57{\times}10^{-3}\;{\Omega}cm$ with the average transmission of 80% in the visible region and an optical band gap (indirect allowed) of 4.26 eV.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.57.2-57.2
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• 2010

투명전도 산화막(Transparent conducing oxide: TCO)은 태양 전지, 터치패널, 가스 센서 등 여러 분야에 적용할 수 있는 물질로서 전기 전도성과 광 투과성을 동시에 가진다. 높은 전기 전도성과 광 투과성을 가지는 Sb:$In_2O_3$(ITO)는 투명전도 산화막 재료로써 가장 일반적으로 사용되고 있으나 인듐의 매장량 한계로 인해 가격이 높다는 단점이 있다. 본 연구에서는 ITO 대체 TCO 물질인 Al doped ZnO(AZO)를 rf magnetron sputter를 이용하여 최적의 수소 도핑량을 찾아 ITO의 전기적 광학적 성질과 비교하였다. AZO 박막은(ZnO:Al2O3 2wt.%)타겟을 이용하여 heater 온도 250도에서 슬라이드 글래스 및 코닝 글래스에 증착시켰고 비교군인 ITO박막은 (In2O3:$SnO_2$ 10wt.%)타겟을 이용하여 수소 도핑 없이 350도로 증착시켰다. AZO 및 ITO 박막의 전기적 특성은 hall measurement를 이용하여 측정하였고, UV-VIS spectrophotometer로 광학적 특성을 측정하였다. 수소 도핑량이 증가함에 따라 AZO 박막의 캐리어 농도가 증가하여 전기적 특성이 향상되었고, 가시광 영역에서 높은 평균 투과도를 유지 하였다. AZO 박막과 ITO 박막의 전기적 및 광학적 특성을 비교한 결과, 최적 수소 도핑량을 가진 AZO 박막은 ITO 박막에 준하는 특성을 보였다.