• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권11호
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• pp.511-516
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• 2002

$TiO_2-SnO_2$ thin films are fabricated using sol-gel method. In case the amount of water required hydrolysis smaller than that for stoichiometry, Ti sol forms clear sol which has normal chain structure. On the contrary, in case the amount of water required hydrolysis larger than that for stoichiometry, Ti sol forms suspended sol which has cluster structure. The thickness of thin films increase about $0.03{\sim}0.04{\mu}m$ every a dipping. The permittivity and dissipation factor of $TiO_2-SnO_2$ thin films decrease with increasing frequency. Thin films show semiconductive characteristics above $400^{\cric}C$.

• 한국결정성장학회지
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• 제13권5호
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• pp.241-246
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• 2003

ATO(antimony-doped tin oxide) 투명전도막을 sol-gel dip coating 방법에 의해 $SiO_2$/glass 기판 위에 성공적으로 제조하였다 ATO막의 결정상은 $SnO_2$상임을 확인하였고, 막의 두께는 withdrawal speed를 50 mm/minute로 코팅시 약 100 nm/layer였다. $SiO_2$/glass 기판 위에 코팅한 400 nm두께의 ATO 박막을 질소분위기에서 annealing한 후, 측정한 광 투과율과 전기 저항치는 각각 84%와 $5.0\times 10^{-3}\Omega \textrm{cm}$였다. 이러한 특성은 $SiO_2$막이 Na 이온의 확산을 제어하여 $Na_2SnO_3$ 및 SnO와 같은 불순물의 형성을 억제하고, 막 내부의 Sb의 농도와 $Sb^{3+}$에 대한 $Sb^{5+}$의 비를 증가시키는데 기여했기 때문으로 확인되었다. 또한, $N_2$ annealing은 $Sb^{5+}$뿐만 아니라 $Sn^{4+}$를 환원시킴으로써 전기전도도를 향상시킴을 확인하였다.

• Journal of Electrical Engineering and Technology
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• 제6권3호
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• pp.414-417
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• 2011

Indium tin oxide (In:$SnO_2$) nanoparticles were synthesized employing a sol-gel combustion method followed by annealing. The TG, XRD, XPS and SEM results of the precursor powders and calcinated In:$SnO_2$ nanoparticles were investigated. Crystal structures were examined by powder XRD, and those results show shaper intensity peak at $25.6^{\circ}$ ($2{\theta}$) of $SnO_2$ by increased annealing temperature. A particle morphology and size was examined by SEM, and the size of the nanoparticles was found to be in the range of 20~30nm. In:$SnO_2$ films could controlled by nanoparticle material at various annealing temperature. The sol-gel combustion method was offered simple and effective route for the synthesis of In:$SnO_2$ nanoparticles.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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• pp.79-81
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• 2004

$TiO_2-SnO_2$ thin films are fabricated using sol-gel method. The thickness of thin films increase about $0.03{\sim}0.04{\mu}m$ every a dipping. The permittivity and dissipation factor of $TiO_2-SnO_2$ thin films decrease with increasing frequency. Thin films show semiconductive characteristics above $400^{\circ}C$.

• 센서학회지
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• 제29권6호
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• pp.420-426
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• 2020

A metal oxide semiconductor gas sensor is operated by measuring the changes in resistance that occur on the surface of nanostructures for gas detection. ZnO, which is an n-type metal oxide semiconductor, is widely used as a gas sensor material owing to its high sensitivity. Various ZnO nanostructures in gas sensors have been studied with the aim of improving surface reactions. In the present study, the sol-gel and vapor phase growth techniques were used to fabricate nanostructures to improve the sensitivity, response, and recovery rate for gas sensing. The sol-gel method was used to synthesize SnO₂ nanoparticles, which were used as the seed layer. The nanoparticles size was controlled by regulating the process parameters of the solution, such as the pH of the solution, the type and amount of solvent. As a result, the SnO₂ seed layer suppressed the aggregation of the nanostructures, thereby interrupting gas diffusion. The ZnO nanostructures with a sol-gel processed SnO₂ seed layer had larger specific surface area and high sensitivity. The gas response and recovery rate were 1-7 min faster than the gas sensor without the sol-gel process. The gas response increased 4-24 times compared to that of the gas sensor without the sol-gel method.

• 센서학회지
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• 제11권6호
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• pp.327-334
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• 2002

초기 물질은 $SnCl_2{\cdot}2H_2O$와 $C_2H_5OH$를 사용하여 sol-gel 법으로 제조된 $SnO_2$ 미세 분말의 제반 물성과 전기적 센싱 특성에 대하여 검토하였다. Gel 분말은 sol을 72시간과 168시간 숙성(aging) 시킨 후 $120^{\circ}C$에서 건조하여 제조하였다. $600^{\circ}C$이하에서는 휘발성 물질이 제거되면서 $SnO_2$ 상이 증가하고. $700^{\circ}C$/30min 열처리로 $SnO_2$ 상 생성은 거의 완결된다. 입자 크기는 $700^{\circ}C$ 이하에서 30nm 이하로 유사하고 입도 분포도 좁았다. 전기적 성질 측정을 위한 시편은 후막법으로 알루미나 기판위에 제조하였다. 공기 중의 전도성은 $450^{\circ}C$ 부터 반도성 세라믹스의 진성(intrinsic) 거동을 보이고, $200-450^{\circ}C$ 구간에서는 $SnO_2$ 입자 표면에서의 산소흡착에 기인해서 전도성 변화가 작았다. 환원성 CO 기체에 대한 응답성, 회복성 그리고 감도 특성은 숙성일자 증가로 향상되었다.

• 센서학회지
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• 제29권5호
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• pp.328-331
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• 2020

In this study, a highly crystalline SnO₂ thin film was formed using a sol-gel process. In addition, a SnO₂ thin-film transistor was successfully fabricated. The fabricated SnO₂ thin-film transistor exhibited conventional n-type semiconductor properties, with a mobility of 0.1 cm² V^-1 s^-1, an on/off current ratio of 1.2 × 10⁵, and a subthreshold swing of 2.69. The formed SnO₂ had a larger bandgap (3.95 eV) owing to the bandgap broadening effect. The fabricated photosensor exhibited a responsivity of 1.4 × 10^-6 Jones, gain of 1.43 × 10⁷, detectivity of 2.75 × 10^-6 cm Hz^1/2 W^-1, and photosensitivity of 4.67 × 10².

• 한국재료학회지
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• 제11권7호
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• pp.603-608
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• 2001

졸겔법에 의해 제조된$ MO-SiO_2$(M=Zn, Sn, In, Ag, Ni)이성분계 실리카 겔에서 금속이온의 종류에 따른 실리카 구조의 변화를 XRD, FT-lR, $^{29}$Si-NMR로 분석하였다. XRD peak을 관찰한 결과 $Ag-SiO_2$겔에서 $AgNO_3$의 부분적인 재결정화가 나타났지만, 첨가된 금속이온과 실리카 매트릭스의 결합에 의한 결정상은 관찰되지 않았다. FT-IR 분석결과 첨가되는 금속이온 중 Zn, Sn, In은 부분적으로 Si-O-M의 결합형태를 이루어 Si-O-Si 대칭 진동에 의한 흡수 peak의 위치를 변화시켰다. $^{29}$Si-NMR 관찰에 의해 Zn, Sn, In등의 금속이온은 실리카의 저온 졸겔 반응에 영향을 미치지 않고 불완전한 네트워크를 갖는 선형적 실리카 구조 내에서 비가교 산소와 결합하며 존재하였다. Ag, Ni는 실리카 네트워크가 형성되는 과정에서 실리카 형성을 위한 졸겔반응의 촉매로서 작용하여, 이러한 금속이온이 첨가된 실리카 네트워크는 보다 치밀한 구조적 특성을 나타내었다.

• 대한금속재료학회지
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• 제48권2호
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• pp.169-174
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• 2010

A micro gas sensor for formaldehyde (HCHO) gas was fabricated by using MEMS (Micro Electro Mechanical System) technology and the sol-gel process. The sensing materials of the $SnO_2$-ZnO system were synthesized by the sol-gel method. The crystal structure and thermal analysis of the $SnO_{2}$-ZnO were characterized by XRD and DSC-TGA. The fabricated gas sensors were tested at various gas concentrations (0.5~5.0 ppm) and different operation temperatures ($350{\sim}550^{\circ}C$). The $SnO_2$-10 mol%ZnO sensor showed the highest sensitivity ($R_s=0.24$) for 1.0 ppm-formaldehyde at $500^{\circ}C$ and response time (90% saturation time) was within 20 seconds.

• 한국재료학회지
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• 제18권2호
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• pp.69-72
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• 2008

A sensor element array for combinatorial solution deposition research was fabricated using LTCC (Low-temperature Co-fired Ceramics). The designed LTCC was co-fired at $800^{\circ}C$ for 1 hour after lamination at $70^{\circ}C$ under 3000 psi for 30 minutes. $SnO_2$ sol was prepared by a hydrothermal method at $200^{\circ}C$ for 3 hours. Tin chloride and ammonium carbonate were used as raw materials and the ammonia solution was added to a Teflon jar. 20 droplets of $SnO_2$ sol were deposited onto a LTCC sensor element and this was heat treated at $600^{\circ}C$ for 5 hours. The gas sensitivity ($S\;=\;R_a/R_g$) values of the $SnO_2$ sensor and 0.04 wt% Pd-added $SnO_2$ sensor were measured. The 0.04 wt% Pd-added $SnO_2$ sensor showed higher sensitivity (S = 8.1) compared to the $SnO_2$ sensor (S = 5.95) to 200 ppm $CH_3COCH_3$ at $400^{\circ}C$.