• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.155.2-155
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• 2000

• Journal of the Korean Ceramic Society
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• v.37 no.12
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• pp.1135-1139
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• 2000

본 연구에서는 Pt/Sn $O_2$박막의 CO 감지특성을 향상시키기 위하여 표면 형상을 제어하였다. Pt/Sn $O_2$계 박막센서의 최적 동작온도는 175$^{\circ}C$이었다. Pt가 12초 동안 증착된 Sn $O_2$가 200ppm의 CO 가스에 대하여 1.23의 최대감도를 나타내었고, 그 이상의 Pt 증착시간 증가에 따라 Sn $O_2$위의 Pt의 coverage가 증가하여 센서의 감도를 감소시켰다. 다층박막(multi-layer thin film)의 단층의 Pt/Sn $O_2$복합체 위에 다시 Sn $O_2$및 Pt의 cluster 층들을 연속적으로 증착함으로서 제작되었다. 단지 하나의 Pt 층만을 증착한 Sn $O_2$막보다 다층의 Pt/Sn $O_2$막이 더욱 우수한 감도( $R_{air}$/ $R_{co}$=1.72, CO: 200 ppm)를 나타내었다. Pt/Sn $O_2$다층박막의 우수한 감도의 원인은 Pt와 Sn $O_2$사이의 계면적 증대 때문인 것으로 생각되어 진다.다.

• Journal of the Korean Ceramic Society
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• v.36 no.11
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• pp.1156-1162
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• 1999

• Journal of the Korean Ceramic Society
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• v.36 no.5
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• pp.564-569
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• 1999

• Journal of Sensor Science and Technology
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• v.21 no.3
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• pp.167-171
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• 2012

Ag- and Pd-loaded $SnO_2$ nanowire network sensors were prepared by the growth of $SnO_2$ nanowires via thermal evaporation, the coating of slurry containing $SnO_2$ nanowires, and dropping of a droplet containing Ag or Pd nanoparticles, and subsequent heat treatment. All the pristine, Pd-loaded and Ag-loaded $SnO_2$ nanowire networks showed the selective detection of $C_2H_5OH$ with low cross-responses to CO, $H_2$, $C_3H_8$, and $NH_3$. However, the relative gas responses and gas selectivity depended closely on the catalyst loading. The loading of Pd enhanced the responses($R_a/R_g$: $R_a$: resistance in air, $R_g$: resistance in gas) to CO and $H_2$ significantly, while it slightly deteriorated the response to $C_2H_5OH$. In contrast, a 3.1-fold enhancement was observed in the response to 100 ppm $C_2H_5OH$ by loading of Ag onto $SnO_2$ nanowire networks. The role of Ag catalysts in the highly sensitive and selective detection of $C_2H_5OH$ is discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.942-945
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• 2003

Nerve gas sensor based on tin oxide was fabricated and its characteristics were examined. Target gas was dimethylmethylphosphonate($C_3H_9O_3P$, DMMP) that is simulant gas of nerve gas. Sensing material was $SnO_2$ added ${\alpha}-Al_2O_3$ with $4{\sim}20wt.%$ and was physically mixed. And then it was deposited by screen printing method on alumina substrate. Sensor device was consisted of sensing electrode with interdigit(IDT) type in front and heater in back side. Total size of device was $7{\times}10{\times}0.6mm^3$. Crystallite size of fabricated $SnO_2$ were characterized by X-ray diffraction(XRD, Rigaku) and morphology of the $SnO_2$ powders was observed by a scanning electron microscope(SEM, Hitachi). Fabricated sensor was measured as flow type and sensor resistance change was monitored real time using LabVIEW program. The best conditions as added $Al_2O_3$ amounts and operating temperature changes were 4wt.% and $300^{\circ}C$ in DMMP 0.5ppm, respectively. The sensitivity was over 75%. Response and recovery times were about 1 and 3 min., respectively. Repetition measurement was very good with ${\pm}3%$ in full scale.

• Korean Journal of Materials Research
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• v.26 no.9
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• pp.468-471
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• 2016

$SnO_2:CNT$ thick films for gas sensors were fabricated by screen printing method on alumina substrates and were annealed at $300^{\circ}C$ in air. The nano $SnO_2$ powders were prepared by solution reduction method using tin chloride ($SnCl_2.2H_2O$), hydrazine ($N_2H_4$) and NaOH. Nano $SnO_2:CNT$ sensing materials were prepared by ball-milling for 24h. The weight range of CNT addition on the $SnO_2$ surface was from 0 to 10 %. The structural and morphological properties of these sensing material were investigated using X-ray diffraction and scanning electron microscopy and transmission electron microscope. The structural properties of the $SnO_2:CNT$ sensing materials showed a tetragonal phase with (110), (101), and (211) dominant orientations. No XRD peaks corresponding to CNT were observed in the $SnO_2:CNT$ powders. The particle size of the $SnO_2:CNT$ sensing materials was about 5~10 nm. The sensing characteristics of the $SnO_2:CNT$ thick films for 5 ppm $H_2S$ gas were investigated by comparing the electrical resistance in air with that in the target gases of each sensor in a test box. The results showed that the maximum sensitivity of the $SnO_2:CNT$ gas sensors at room temperature was observed when the CNT concentration was 8wt%.

• Korean Journal of Materials Research
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• v.22 no.7
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• pp.358-361
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• 2012

Co and Ni as catalysts in $SnO_2$ sensors to improve the sensitivity for $CH_4$ gas and $CH_3CH_2CH_3$ gas were coated by a solution reduction method. $SnO_2$ thick films were prepared by a screen-printing method onto $Al_2O_3$ substrates with an electrode. The sensing characteristics were investigated by measuring the electrical resistance of each sensor in a chamber. The structural properties of $SnO_2$ with a rutile structure investigated by XRD showed a (110) dominant $SnO_2$ peak. The particle size of the $SnO_2$:Ni powders with Ni at 6 wt% was about 0.1 ${\mu}m$. The $SnO_2$ particles were found to contain many pores according to a SEM analysis. The sensitivity of $SnO_2$-based sensors was measured for 5 ppm of $CH_4$ gas and $CH_3CH_2CH_3$ gas at room temperature by comparing the resistance in air to that in the target gases. The results showed that the best sensitivity of $SnO_2$:Ni and $SnO_2$:Co sensors for $CH_4$ gas and $CH_3CH_2CH_3$ gas at room temperature was observed in $SnO_2$:Ni sensors coated with 6 wt% Ni. The $SnO_2$:Ni gas sensors showed good selectivity to $CH_4$ gas. The response time and recovery time of the $SnO_2$:Ni gas sensors for the $CH_4$ and $CH_3CH_2CH_3$ gases were 20 seconds and 9 seconds, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.846-850
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• 2003

Thin film $SnO_2$ Gas Sensor was fabricated by using ion beam sputtering and ultra thin film Pt catalyst of $45{\AA}$ was deposited on $SnO_2$ thin film. The effects of annealing temperature on the structural properies of $SnO_2$ were investigated using the X-ray diffraction. Using SEM, microstructures of thin film were investigated. The good gas sensitivity is shown when annealing condition is $650^{\circ}C$, 5hr and ultra thin film Pt catalyst thickness is $45{\AA}$.

• Korean Journal of Materials Research
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• v.20 no.8
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• pp.408-411
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• 2010

Indium doped $SnO_2$ thick films for gas sensors were fabricated by a screen printing method on alumina substrates. The effects of indium concentration on the structural and morphological properties of the $SnO_2$ were investigated by X-ray diffraction and Scanning Electron Microscope. The structural properties of the $SnO_2$:In by X-ray diffraction showed a (110) dominant $SnO_2$ peak. The size of $SnO_2$ particles ranged from 0.05 to $0.1\;{\mu}m$, and $SnO_2$ particles were found to contain many pores, according to the SEM analysis. The thickness of the indium-doped $SnO_2$ thick films for gas sensors was about $20\;{\mu}m$, as confirmed by cross sectional SEM image. Sensitivity of the $SnO_2$:In gas sensor to 2000 ppm of $CO_2$ gas and 50 ppm of H2S gas was investigated for various indium concentrations. The highest sensitivity to $CO_2$ gas and H2S gas of the indium-doped $SnO_2$ thick films was observed at the 8 wt% and 4 wt% indium concentration, respectively. The good sensing performances of indium-doped $SnO_2$ gas sensors to $CO_2$ gas were attributed to the increase of oxygen vacancies and surface area in the $SnO_2$:In. The $SnO_2$:In gas sensors showed good selectivity to $CO_2$ gas.