• Korean Journal of Materials Research
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• v.18 no.8
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• pp.438-443
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• 2008

SnO nanosheets were prepared at room temperature through a reaction between an aqueous solution of $SnCl_2$, $N_2F_4$, and NaOH and were converted into $SnO_2$ nanosheets without a morphological change. The SnO nanosheets were formed through a dissolution-recrystallization mechanism. Uniform and well-dispersed SnO nanosheets with the round-shape morphology were attained when the solution was treated by ultrasonic sound immediately after the addition of NaOH. The $SnO_2$ nanosheets prepared by means of solution reduction under the ultrasonic treatment, and subsequent oxidation at $600^{\circ}C$ showed a high level of gas sensitivity to $C_2H_5OH$ and $CH_3COCH_3$.

• Bulletin of the Korean Chemical Society
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• v.19 no.10
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• pp.1073-1079
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• 1998

The potential energy surface (PES) of the non-identical SN2 reactions, F- + CH3Cl → FCH3 + Cl and (H2O)F + CH3Cl → FCH3 + Cl-(H2O), were investigated with ab initio MO calculations. The ab initio minimum energy reaction path (MERP) of the F- + CH3Cl → FCH3 + Cl- was obtained and it was expressed with an intermediate variable t. The ab initio PES was obtained near around t. Analytical potential energy function (PEF) was determined as a function of the t in order to reproduce the ab initio PES. Based on Morse-type potential energy function, a Varying Repulsive Cores Model (VRCM) was proposed for the description of the bond forming and the bond breaking which occur simultaneously during the SN2 reaction. The MERP calculated with the PEF is well agreed with the ab initio MERP and PEF could reproduce the ab initio PES well. The potential parameters for the interactions between the gas phase molecules in the reactions and water were also obtained. ST2 type model was used for the water.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.65-70
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• 1998

The Spray-ICP technique uses the ICP(Inductively Coupled Plasma) of ultra-high temperature which is produced by r.f power. The ICP is well-kwown as a clean heat source for the preparation of pure ceramic particles because the ICP is a electrodeless-thermal plasma without contamination. In this study,{{{{ { SnO}_{2 } }}}} particles were sythesized from metal salt solution by Spray-ICP technique. The effects of concentration of solution, collecting location of powders were investicated. The prepared {{{{ { SnO}_{2 } }}}} particles from each concentration of solution had same crystalline phase(tetragonal {{{{ { SnO}_{2 } }}}}) a nd the mean size decreased in proportion to the increase of solution concentration. Each {{{{ { SnO}_{2 } }}}} p owders collector in reactor and electrostatic collector had same crystalline phase and morphologies. The mean size of {{{{ { SnO}_{2 } }}}} p articles prepared by Spray-ICP technique was below 30nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.11
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• pp.710-716
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• 2017

New white-light-emitting $SrSnO_3:Dy^{3+}$ phosphors were prepared using different concentrations of $Dy^{3+}$ ions via a solid-state reaction. The phase structure, luminescence, and morphological properties of the synthesized phosphors were investigated using X-ray diffraction analysis, fluorescence spectrophotometry, and scanning electron microscopy, respectively. All the synthesized phosphors crystallized in an orthorhombic phase with a major (020) diffraction peak, irrespective of the concentration of $Dy^{3+}$ ions. The excitation spectra were composed of a broad band centered at 298 nm, ascribed to the $O^2-Dy^{3+}$ charge transfer band and five weak bands in the range of 350~500 nm. The emission spectra of $SrSnO_3:Dy^{3+}$ phosphors consisted of three bands centered at 485, 577, and 665 nm, corresponding to the $^4F_{9/2}{\rightarrow}^6H_{15/2}$, $^4F_{9/2}{\rightarrow}^6H_{13/2}$, and $^4F_{9/2}{\rightarrow}^6H_{11/2}$ transitions of $Dy^{3+}$, respectively. As the $Dy^{3+}$ concentration increased from 1 to 15 mol%, the intensities of all the emission bands gradually increased, reached maxima at 15 mol% of $Dy^{3+}$ ions, and then decreased rapidly at 20 mol% due to concentration quenching. The critical distance between neighboring $Dy^{3+}$ ions for concentration quenching was calculated to be $9.4{\AA}$. The optimal white light emission by the $SrSnO_3:Dy^{3+}$ phosphors was obtained when the $Dy^{3+}$ concentration was 15 mol%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04c
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• pp.121-122
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• 2008

Blue emitting materials have been explored by various researchers. However, blue-emitting materials with high luminous efficiency, good color purity, and thermal stability are still much desired. In this study, we synthesized a new blue luminescent material, $SnDP(HPB)_2$ which is low molecular compound and thermal stability. The PL spectrum of $SnDP(HPB)_2$ was observed blue at the wavelength of 447nm. The ionization potential(IP) and the electron affinity(EA) of $SnDP(HPB)_2$ was measured to be 6.7 eV and 3.0 eV, respectively. The fundamental structure of the OLED was ITO/NPB/$SnDP(HPB)_2/Alq_3$/LiF/Al. As a Result, we obtained to enhance the performance of blue OLED.

• Journal of the Korean Ceramic Society
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• v.32 no.6
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• pp.719-725
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• 1995

ZST powders were synthesized by coprecipitation of (Zr4+, Ti4+)-hydroxide in the presence of SnO2 particles. Zn(NO3)2 was used as a sintering additive, and according to the adding sequence, sintering and dielectric properties were investigated. Sintered densities of ZST prepared by adding Zn(NO3)2 before calcination were a little higher than those added after calcination, and dielectric properties of the specimen added by Zn(NO3)2 after calcination were better (sintered at 125$0^{\circ}C$/2 h ; Q$\times$f(GHz)=49, 000, $\varepsilon$r=41) than before calcination (Q$\times$f(GHz)=42, 000, $\varepsilon$r=39.5). Through the observation of TEM, it was identified that the cause was due to the difference of the degree of Zn2+ diffusion into grains. With increasing sintering time from 2 to 8 hrs, grain size was doubled and dielectric properties were somewhat deteriorated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.571-574
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• 2000

In this study, Tin oxide thin film for secondary battery was deposited on Pt/Ti/Si(100). It was fabricated by r.f. reactive sputtering with Tin metal target. At constant power (130W), pressure (Base 5$\times$10$^{-6}$ Torr, working 5$\times$10$^{-3}$ Torr) and at room temperature, it was fabricated by Ar/O2 gas ratio. After deposition, we got AFM & SEM to investigated surface of thin films and had XRD to find crystalline of thin films. Charge/discharge characteristics were carried out in 1M LiPF$_{6}$ , EC:DMC = 1:1 liquid electrolyte using lithium metal at room temperature.

• Journal of Surface Science and Engineering
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• v.18 no.3
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• pp.116-124
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• 1985

Chemical vapor deposition of $SnO_2$ on Pyrex glass substrate has been investigated using $SnCl_4$ and Oxygen at relatively low temperatures(300-500$^{\circ}C$). The critical flow rate, which delineated the surface reaction controlled region from the mass transfer controlled region, was increased with deposition temperature. The apparent activation energy obtained in surface reaction controlled region was about 6Kcal/mole. The results show that deposition rate, electrical conductivity and transmittance were affected mainly by partial pressure of $SnCl_4$, but little by partial pressure f oxygen. The % transmission of 5000A-thick $SnO_2$ film was about 90% in visible spectrum region and sheet resistance was varied in 0.1-10${\Omega}$ per square shaped portion of the outer surface of the oxide.

• Journal of the Korean Ceramic Society
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• v.37 no.2
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• pp.194-200
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• 2000

Sb-doped tin oxide films were deposited on Corning glass 1737 substrate by plasma enhanced chemical vapor deposition(PECVD) technique using a gas mixture of SnCl4/SbCl5/O2/Ar. The deposition behaviors of tin oxide films by PECVD were compared with those by thermal CVD, and effects of deposition temperature, r.f. power and Sb doping on the electrical properties of tin oxide films were investigated. PECVD technique largely increased the deposition rate and smoothed the surface of tin oxide films compared with thermal CVD. Electrical resistivity decreased with doping of Sb due to the increase of carrier concentration. However, large doping of Sb diminished carrier concentration and mobility due to the decrease of crystallinity, which resulted in the increase of electrical resistivity. As the deposition temperature and r.f. power increased, Cl content in the film decreased.

• Journal of the korean academy of Pediatric Dentistry
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• v.24 no.1
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• pp.204-219
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• 1997

The use of fluoride is one of the most effective methods for caries prevention. Fluoridation of public water supply has been recognized, for many years, as an effective way to reduce dental caries. The fluoride supplement has been recommended when the natural fluoride was unavailable or below the optimal range. However the mechanism of caries prevention by fluoride has not yet been clarified and it is well known that an overdose of fluoride results inacute and chronic toxicity, especially dental fluorosis. Fluoride mouthrinsing solution is widely used in dentistry due to its effectiveness in carrying anticariogenic action. Understanding the effects of fluoride mouthrinsing solution on human gingival fibroblasts will provide the safety rationale for its use during the caries preventive therapy. The purpose of this study was to evaluate the cytotoxic effect of fluoride mouthrinsing solution on the human gingival fibroblast in vitro. The human gingival fibroblasts were cultured from healthy gingiva on the extracted deciduous teeth of children. Cells were inoculated into a 24-well plate with $1{\times}10^4cells/well$ of medium at $37^{\circ}C$, 100% humidity, 5% $CO_2$ incubator for 24 hours. And the cells were counted by using the hemocytometer at each designed study. Human gingival fibroblasts were cultured in growth medium after one minute application range of 0.02%-0.2% NaF solution and 0.1% $SnF_2$ solution. The cells used in this study were between fifth to eighth passage number. The cell morphology was examined by inverted microscope and cell proliferation was measured by incorporating $[^3H]$-thymidine into DNA. DNA synthesis by human gingival fibroblasts was assessed by $[^3H]$-thymidine uptake assays while the cell activity was measured by MTT assay. Each concentrated fluoride mouthrinsing solution was estimated for its biocompatability with fibroblasts by the tissue culture technique. The results of this study were as follows : 1. It was observed that at 0.05%, 0.2% NaF mouthrinsing solution the cytoplasmic processes became globular. When 0.1% $SnF_2$ mouthrinsing solution was applied, the cytoplasmic process and cell morphology were disappeared. 2. DNA synthetic activity was reduced regardless of the concentration of the fluoride mouthrinsing solution. However, the result is statistically insignificant except 0.1% $SnF_2$ mouthrinsing solution(p<0.05). 3. Our results indicate that 0.02%, 0.05% concentrations of NaF mouthrinsing solution caused minimal cytotoxicity. But 0.2% NaF and 0.1% $SnF_2$ concentration were a significant difference between the cell activity in the experimental group and control group (p<0.05). 4. After appling 0.05% & 0.02% NaF fluoride mouthrinsing solution, cell activity was restored to the control groups level according to incubating time. The results suggest that direct exposure to fluoride solution inhibits gingival fibroblast activity. Therefore, for the most effective use of fluoride use, lowering the concentration of fluoride mouthrinsing is advisable because it maintains biocompatability and free ion in the oral fluid.