• Title/Summary/Keyword: $Sm_2O_3$

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Separation and Purification for the Determination of Samarium and its Isotopes in PWR Spent Nuclear Fuels (PWR 사용후핵연료 중 Sm 동위원소 정량을 위한 분리 및 정제)

  • Kim, Jung Suk;Jeon, Young Shin;Choi, Kwang Soon;Park, Soon Dal;Lee, Chang Heon;Kim, Won Ho
    • Analytical Science and Technology
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    • v.14 no.4
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    • pp.291-299
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    • 2001
  • A method of separation and purification of Sm for quantitation of Sm isotopes from various fission products in PWR spent nuclear fuels has been studied. Simulated solution containing inactive metal ions(Cs, Ba, Gd, Eu, Sm and Nd) in place of radioactive fission products was prepared. Sm was separated with 0.5 M $HNO_3$/80% MeOH after washing with 1 M $HNO_3$/90% MeOH on AG $1{\times}8$, anion exchange resin. Sm was purified on cation exchange resin, AG $50W{\times}8$, pretreated with 0.2 M alpha-hydroxisobutyric acid(pH 4.5-4.6) to remove Ba causing isobaric effect Sm from PWR spent fuel. As a result of mass spectrometric measurement, eluted Sm portion did not include isobars form other elements such as Gd, Eu, Pm, Nd and BaO. The contents of Sm and its isotopes($^{147}Sm$, $^{148}Sm$, $^{149}Sm$, $^{150}Sm$, $^{151}Sm$, $^{152}Sm$ and $^{154}Sm$) in spent fuel were determined by isotope dilution mass spectrometric method spiking $^{154}Sm$.

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Fabrication of Sm0.5Sr0.5CoO3 cathode films for intermediate temperature SOFCs by electrostatic spray deposition (정전분무증착법에 의한 중온형 고체산화물 연료전지를 위한 Sm0.5Sr0.5CoO3 양극막의 제조)

  • Park, In-Yu;Im, Jong-Mo;Jung, Yeong-Geul;Shin, Dong-Wook
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.20 no.2
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    • pp.69-73
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    • 2010
  • The microstructural change of the $Sm_{0.5}Sr_{0.5}CoO_3$ (SSC) electrode for a cathode material of solid oxdie fuel cells (SOFCs) deposited by the electrostatic spray deposition (ESD) technique was characterized. Samarium chloride hexahydrate $(SmCl_3{\cdot}6H_2O)$, strontium chloride hexahydrate $(SrCl_2{\cdot}gH_2O)$, cobalt nitrate hexahydrate $(Co(No_3)_2{\cdot}6H_2O)$ as starting materials and methyl alcohol as solvent were used to make precursor solution. The suitable porous SSC films for a cathode of SOFCs were deposited on Si substrate and it is observed that the microstructure was strongly dependent on processing parameters such as deposition time, substrate temperature, and applied voltage. Scanning Electron Microscope (SEM) and X-ray Diffractometer (XRD) measurement were used to investigate the microstructure and crystallinity of the SSC films. The ESD technique is shown to be an efficient method in which the SOFCs' cathode film can be fabricated with the desired phases and microstructure.

Electrical Conductivity of S$m_2O_3-ZrO_2$ Systems (S$m_2O_3-ZrO_2$계의 전기전도성)

  • Jeong Hwan Cho;Keum Hwi Chang;Keu Hong Kim;Yong Bae Kim;Jae Shi Choi
    • Journal of the Korean Chemical Society
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    • v.29 no.6
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    • pp.608-614
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    • 1985
  • Electrical conductivities of $ZrO_2-Sm_2O_3$ systems containing 10, 20, 30, 40, and 50 mol% of $ZrO_2$ have been measured as a function of temperature and of oxygen partial pressure at temperature from 500 to 1000${\circ}C$ and oxygen partial pressures from 1 ${\times}10^{-5}to 1{\times}10^{-1}$ atm. Plots of log conductivity vs. 1/T are found to be linear with an inflection point at around 650$^{\circ}C$ and the temperature dependence of conductivity shows two different defect structures. The conductivities are increased with increasing pressure, slowing a p-type character. The electrical conductivity dependences on $Po_2$ are found to be ${\sigma}{\propto}Po_2^{1/5.3}$ at 650∼1000$^{\circ}C$ and ${\sigma}{\propto}Po_2^{1/6}$ at 500∼650$^{\circ}C$, respectively, The defect structures are Oi" at 650-1000$^{\circ}C$ and $Vs_m$"' at 500-650$^{\circ}C$. The electron hole is main carrier type, however ionic contribution is found at low temperature portion. Ionic contributions increased with the increasing amount of $ZrO_2$ dopant. In 60mol% $ZrO_2-Sm_2O_3$ system, the conductivity is increased with decreasing oxygen pressure.

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Lanthanide-Oxalate Coordination Polymers Formed by Reductive Coupling of Carbon Dioxide to Oxalate: [Ln2(3,5-pdc)2(C2O4)(H2O)4]·2H2O (Ln = Eu, Sm, Ho, Dy; pdc = Pyridinedicarbox

  • Huh, Hyun-Sue;Lee, Soon W.
    • Bulletin of the Korean Chemical Society
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    • v.27 no.11
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    • pp.1839-1843
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    • 2006
  • Hydrothermal reactions of $Ln(NO_3)_3{\cdot}5H_2O $ (Ln = Eu (1), Sm (2), Ho (3), Dy (4)) with 3,5-pyridinedicarboxylic acid (3,5-pdcH2) in the presence of 4,4'-bipyridine led to the formation of the 3-D Ln(III)-coordination polymers with a formula unit of $[Ln_2(3,5-pdc)_2(C_2O_4)(H_2O)_4]{\cdot}2H_2O$. These polymers contain a bridging oxalate ligand ($C_2O_4\;^2$). On the basis of GCMS study of the mother liquor remaining after the reaction, we proposed that the $C_2O_4\;^2$ formation proceeds in three steps: (1) Ln(III)-mediated decarboxylation of $3,5-pdcH_2$ to give $CO_2$, (2) the reduction of $CO_2$ to $CO_2\;^{\cdot}$ by the Ln(II) species, and (3) the reductive coupling of the two $CO_2\;^{\cdot}$ radicals to the oxalate ($C_2O_4\;^2$) ion. All polymers were structurally characterized by X-ray diffraction.

The Study of Different Buffer Structure on Ni-W Tape for SmBCO Coated Conductor

  • Kim, T.H.;Kim, H.S.;Oh, S.S.;Ko, R.K.;Ha, D.W.;Song, K.J.;Lee, N.J.;Yang, J.S.;Jung, Y.H.;Youm, D.J.;Park, K.C.
    • Progress in Superconductivity and Cryogenics
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    • v.8 no.4
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    • pp.8-11
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    • 2006
  • High temperature superconducting coated conductor has various buffer structures on Ni-W alloy. We comparatively studied the growth conditions of a multi buffer layer $(CeO_2/YSZ/CeO_2)$ and a single buffer layer$(CeO_2)$ on textured Ni-W alloy tapes. XRD data showed that the qualities of in-plane and out-of-plane textures of the two type buffer structures were good. Also, we investigated the properties of SmBCO superconducting layer that was deposited on the two type buffer structure. The SmBCO superconducting properties on the single and multi buffer structure showed different critical current values and surface morphologies. FWHM of In-plane and out-of-plane textures were $7.4^{\circ},\;5.0^{\circ}$ in the top CeO2 layer of the multi-buffer layers of $CeO_2/YSZ/CeO_2$, and $7.3^{\circ},\;5.1^{\circ}$ in the $CeO_2$ single buffer layer. $1{\mu}m-thick$ SmBCO superconducting layers were deposited on two type buffer layer. $I_c$ of SmBCO deposited on single and multi buffer were 90 A/cm, 150 A/cm and corresponding $J_c$ were $0.9MA/cm^2,\;1.5MA/cm^2$ at 77K in self-field, respectively.

Fabrication of Thick SmBCO/IBAD-MgO coated conductor (후막 SmBCO/IBAD-MgO 초전도 박막선재의 제조)

  • Lee, J.H.;Kang, D.K.;Ha, H.S.;Ko, R.K.;Oh, S.S.;Kim, H.K.;Yang, J.S.;Jung, S.W.;Moon, S.H.;Youm, D.;Kim, C.J.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.05a
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    • pp.9-9
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    • 2009
  • Coated conductor is required to have good critical current property for high efficiency of electric power applications. Until now, long coated conductor does not show high Jc over 3 MA/$cm^2$ in thick superconducting layer because of texture degradation by thick superconducting layer. In this study, in order to overcome this issue, thicker superconducting layer was deposited with optimized conditions to reduce the degradation of critical current density. SmBCO superconducting coated conductor was deposited with 1~3 um of thickness at $750\sim850^{\circ}C$ under 15~20 mTorr of oxygen partial pressure using batch type EDDC( evaporation using drum in dual chamber). The buffered substrate for superconducting layer deposition was used IBAD-MgO template with the architecture of $LaMnO_3/MgO/Y_2O_3/Al_2O_3$/Hastelloy. After fabrication of coated conductor, critical current was measured by 4-prove method under self-magnetic field and 77K. In addition, surface morphology and texture were analyzed by SEM and XRD, respectively. 3 um thick SmBCO coated conductor shows highest $I_C$ values of 638A/cm-w in 1 m long in the world.

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Structural, optical, and morphological properties of BaWO4:Sm3+ phosphor thin films grown at different deposition temperature (서로 다른 증착 온도에서 성장된 BaWO4:Sm3+ 형광체 박막의 구조, 광학, 표면 형상의 특성)

  • Cho, Shinho
    • Journal of the Korean institute of surface engineering
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    • v.55 no.2
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    • pp.96-101
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    • 2022
  • The effects of the growth temperature on the structural, optical, and morphological properties of BaWO4:Sm3+ phosphor thin films were investigated. The BaWO4:Sm3+ thin films were grown on quartz substrates at several growth temperatures by radio-frequency magnetron sputtering. All the thin films crystallized in a tetragonal structure with a main BaWO4 (112) diffraction peak. The 830 nm-thick BaWO4:Sm3+ thin films grown at 300 ℃ exhibited numerous polygon-shaped particles. The excitation spectra of BaWO4:Sm3+ thin films consisted of a broad excitation band in the 200-270 nm with a maximum at 236 nm due to the O2--Sm3+ charge transfer and two small bands peaked at 402 and 463 nm, respectively. Under 236 nm excitation, the BaWO4:Sm3+ thin films showed an intense red emission peak at 641 nm due to the 4G5/26H9/2 transition of Sm3+, indicating that the Sm3+ ions occupied sites of non-inversion symmetry in the BaWO4 host lattice. The highest emission intensity was observed for the thin film grown at 300 ℃, with a 51.8% transmittance and 5.09 eV bandgap. The average optical transmittance in the wavelength range of 500-1100 nm was increased from 53.2% at 200 ℃ to 60.8% after growing at 400 ℃. These results suggest that 300 ℃ is the optimum temperature for growing redemitting BaWO4:Sm3+ thin films.

Nonstoichiometry of $ZrO_2$ and $Sm_2O_3$ ($ZrO_2$$Sm_2O_3$의 비화학양론)

  • Soon Ho Chang;Chul Hyun Yo;Jae Shi Choi;Mu Sil Pyon
    • Journal of the Korean Chemical Society
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    • v.30 no.1
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    • pp.33-39
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    • 1986
  • The x-values of nonstoichiometry chemical formulas, Sm$O_{1.5+x}$ and Zr$O_{2+x}$, have been measured in temperature range from 500$^{\circ}$C to 1000$^{\circ}$C under oxygen pressure of 2 ${\times}10^{-1}$ to 1 ${\times}10^{-5}$ atm by gravimetric method. The enthalpies of formation of defect in samarium sesquioxide and zirconium dioxide decrease with decreasing oxygen pressure and are all positive. The 1/n values calculated from the slopes of the plots of log x vs. log $PO_2$ increase with temperature and are positive values which mean the higher oxygen pressure dependence at higher temperature. From x-values and thermodynamic data, it is found out that the nonstoichiometric defect is fully ionized metal vacancy. The conduction mechanisms of the systems are also discussed with respect to the nonstoichiometric compositions.

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Crystal Structures and Luminescence Properties of [Ln(NTA)2·H2O]3- Complexes (Ln = Sm3+, Eu+3, Gd3+, Tb3+, Ho3+, and NTA = Nitrilotriacetate)

  • Kang, Jun-Gill;Kang, Hee-Jung;Jung, Jae-Sun;Yun, Sock-Sung;Kim, Chong-Hyeak
    • Bulletin of the Korean Chemical Society
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    • v.25 no.6
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    • pp.852-858
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    • 2004
  • Crystal structures of lanthanide complexes with NTA (NTA = nitrilotriacetate) are reported. The complexes of $[Ln(NTA)_2{\cdot}H_2O]^{3-}$ (Ln = Sm, Eu, Gd, Tb and Ho) crystallize in the orthorhombic space group Pccn. In the structures, the trivalent lanthanide ions are completely encapsulated via coordination to the two nitrogen atoms and the six carboxylate oxygen atoms of the two NTA ligands, and one water oxygen atoms. The complexes form a slightly distorted capped-square-antiprism polyhedron. Of the complexes, $[Eu(NTA)_2{\codt}H_2O]^{3-}$,\;[Tb(NTA)_2{\cdot}H_2O]^{3-}\;and\;[Dy(NTA)_2{\cdot}H_2O]^{3-}$ excited at the 325 He-Cd line produce very characteristic luminescence features, arising mostly from the f ${\to}$ f transitions. The absolute quantum yields of these complexes are determined at room temperature. Surprisingly, the $[Dy(NTA)_2{\cdot}H_2O]^{3-}$ complex is more luminescent than the $[Eu(NTA)_2{\cdot}H_2O]^{3-}\;and\;[Tb(NTA)_2{\cdot}H_2O]^{3-}$ complexes.