• Journal of the Korean Ceramic Society
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• v.36 no.5
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• pp.547-554
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• 1999

The self-reinforced Si3N4 ceramics were prepared by pressureless-sintering using ${\beta}$-Si3N4 whiskers as a seed. Effects of ${\beta}$-Si3N4 whiskers on microstructure and mechanical properties and the ${\alpha}$ to ${\beta}$ phase transition of Si3N4 were investigated. The self-reinforced Si3N4 ceramics were densified(relative density$\geq$98%) by pressureless-sintering (1800$^{\circ}C$ 2h) using 8mol% Y2O3 and 6mol% Al2O3 as sintering aids and 5 vol% ${\beta}$-Si3N4 whiskers within self-reinforced Si3N4 ceramic seemed to hinder the densification owing to their acicular shapes but accelerated the ${\alpha}$ to ${\beta}$ phase transition because they acted as pre-existing nuclei. It was found that the more ${\beta}$-Si3N4 nucei the faster ${\alpha}$ to ${\beta}$ phase transition.

• The Korean Journal of Ceramics
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• v.5 no.2
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• pp.148-154
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• 1999

A method to simultaneously synthesize and consolidate $Ti_5Si_4 \;and\; Ti_5Si_3$-20 vol%Nb composite from powders of Ti, Si and Nb was investigated. Combustion synthesis was carried out under the combined effect of an electric field and mechanical pressure. Highly dense $Ti_5Si_4 \;and\; Ti_5Si_3$-20 vol% Nb with relative densities up to 98% was produced from powders of Ti, Si and Nb under the application of 60 MPa pressure and 3000A current on the reactant.

• Journal of the Korean Ceramic Society
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• v.30 no.3
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• pp.243-249
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• 1993

Coated type Al2O3-SiC composite powders were synthesized by surface modification method. Transformation temperature to $\alpha$-Al2O3 of Al2O3 monolith was 115$0^{\circ}C$ whereas increased to 1200, 1250, 130$0^{\circ}C$ with increment of SiC content to 5, 15, 25wt%. Transformation temperature to $\alpha$-Al2O3 was lowered by $\alpha$-Al2O3 seeding. FTIR data analysis and electron micrographs showed that Al2O3 particles were effectively coated on SiC particles.

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.162-166
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• 2000

High quality $Si_3N_4$ metal-insulator-metal (MIM) capacitors were realized by plasma enhanced chemical vapor deposition (PECVD). Titanium nitride (TiN) adapted as a diffusion barrier reduced the interfacial reaction between $Si_3N_4$ dielectric layer and aluminum metal electrode showing neither hillock nor observable precipitate along the interface. The capacitance and the current-voltage characteristics of the MIM capacitors showed that the minimum thickness of $Si_3N_4$ layer should be limited to 500 $\AA$ under the present process, below which most of the capacitors were electrically shorted resulting in the devastation of on-wafer yield. According to the transmission electron microscopy (TEM) on the cross-sectional microstructure of the capacitors, the dielectric breakdown was caused by slit-like voids formed at the interface between TiN and $Si_3N_4$ layers when the thickness of $Si_3N_4$ layer was less than 500 $\AA$. Based on the calculation of thermally-induced residual stress, the formation of voids was understood from the mechanistic point of view.

• Korean Journal of Materials Research
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• v.6 no.7
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• pp.709-715
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• 1996

The influence of an electric field on the combustion synthesis of ${Ti}_{5}{Si}_{3}$-x ${ZrO}_{2)$(0 $\leq$ x $\leq$0.6)was investigated. Composite of X $\geq$0.45 can only be synthesized in the presence of an electric field. Although in the absence of an electri field the system with x = 0.45 and x=0.6 can sustain a nonsteady combustion wave, the reaction is not complete. That is, an unstable wave propagates to the middle of the sample and them becomes extinguished. Wave velocity o the ${Ti}_{5}{Si}_{3}-{ZrO}_{2}$ Composites slightly increases with the imposition of external field across the sample.

• Journal of the Korean Ceramic Society
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• v.38 no.9
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• pp.794-798
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• 2001

$Y_{2-x}SiO_5:Ce_x^{3+}$(x=0.002∼0.04) phosphors were prepared by sol-gel process, amorphous crystal phase was observed in calcining dry gel at 800$^{\circ}$C, but pure $X_2$ type of type $Y_2SiO_5$ phase appeared from heat treatment above 1000$^{\circ}$C. Light absorption of tye $Y_2SiO_5$ host lattice occurred at 230∼360nm, and light absorption of the $Y_{2-x}SiO_5:Ce_x^{3+}$ phosphors was observed at 300∼400nm in adding $Ce^{3+}$. $Y_{2-x}SiO_5:Ce_x^{3+}$ phosphors showed maximum emission shoulder at 436nm. Maximum CL intensities of $Y_{2-x}SiO_5:Ce_x^{3+}$ were observed in adding 0.025 $Ce^{3+}$ and the phosphor showed x=0.161, y=0.124 in color coordinate of CIE1931.

• Korean Journal of Metals and Materials
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• v.49 no.7
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• pp.565-569
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• 2011

Nanopowders of MgO, $Al_2O_3$ and $SiO_2$ were made by high-energy ball milling. The fast sintering of nanostructured $Al_2O_3-MgSiO_3-SiO_2$ composites was investigated from mechanically activated powders of MgO, $Al_2O_3$ and $SiO_2$ by a pulsed-current activated sintering process. Nanocrystalline materials have received much attention as advanced engineering materials with improved physical and mechanical properties; in particular greater strength, hardness, excellent ductility and toughness. Highly dense nanostructured $Al_2O_3- MgSiO_3-SiO_2$ composites were produced with simultaneous application of 80 MPa and pulsed output current of 2800A within 2 minutes. The sintering behavior, grain size and mechanical properties of $Al_2O_3-MgSiO_3-SiO_2$ composites were investigated.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.304-304
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• 2014

Quaternary Ti-Al-Si-N films were deposited on WC-Co substrates by a hybrid deposition system of arc ion plating (AIP) method for Ti-Al source and DC magnetron sputtering technique for Si incorporation. The synthesized Ti-Al-Si-N films were revealed to be composites of solid-solution (Ti,Al)N crystallites and amorphous $Si_3N_4$ by instrumental analyses. The Si addition in Ti-Al-N films affected the refinement and uniform distribution of crystallites by percolation phenomenon of amorphous silicon nitride, similarly to Si effect in TiN film. As the Si content increased up to about 9 at.%, the hardness of Ti-Al-N film steeply increased from 30 GPa to about 50 GPa. The highest microhardness value (~50 GPa) was obtained from the Ti-Al-Si-N film having the Si content of 9 at.%, the microstructure of which was characterized by a nanocomposite of $nc-(Ti,Al)N/a-Si_3N_4$.

• Journal of the Korean Society of Industry Convergence
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• v.7 no.4
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• pp.349-354
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• 2004

The growth mode of the Si layers which were grown on Si(111) by using Ag as surfactant were investigated by intensity oscillations of the RHEED specular spot at the different temperatures. we found that the introduction of Ag as the surfactant alters the growth mode from a three-dimensional clustering mechanism to a two-dimensional layer-by-layer growth. In the growth of Si layers on Si(111) with a surfactant Ag, At $450^{\circ}C$, RHEED intensity oscillation was very stable and periodic from early stage of deposition to 32 ML. RHEED patterns during homoepitaxial growth at $450^{\circ}C$ was changed from $7{\times}7$ structure into ${\sqrt{3}}{\times}{\sqrt{3}}$ structures. Since the ${\sqrt{3}}{\times}{\sqrt{3}}$ structure include no stacking fault, the stacking fault layer seems to be reconstructed into normal stacking one at transition from the $7{\times}7$ structure to a ${\sqrt{3}}{\times}{\sqrt{3}}$ one. We also found that the number of the intensity oscillation of the specular spot for Si growth with a surfactant Ag was more than for Si growth without a surfactant. This result may be explained that the activation energy decrease for the surface diffusion of Si atoms due to segregation of the surfactant toward the growing surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.407-410
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• 2002

Thermal oxidations of 3C-SiC thin-films grown on Si(100) by APCVD(atmospheric pressure chemical vapor deposition) were carried out. The oxidations of 3C-SiC were performed at $1100^{\circ}C$ for 1~6 hr in wet and dry $O_2$ ambient, respectively. Ellipsometry was used to determine the thickness and index of refraction of oxide films. The oxide thickness vs. the oxidation time follows the general relationship used for the thermal oxidation of Si. The surface roughness was analyzed by using AFM(atomic force microscopy). The surface roughness of oxidized 3C-SiC was rougher than before oxidation. The thermal oxide was found to be $SiO_2$ by XPS(X-ray photoelectron spectroscopy) analysis. Auger analysis showed them to be homogeneous with near stoichiometric composition.