• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2002.05a
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• pp.49-49
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• 2002

독립된 티타늄(Ti)과 실리콘(Si) 타켓을 사용하여 DC reactive magnetron co-sputtering 공 정으로 Ti-Si-N 코탱막을 SKD 11 합금강위에 합성하였다. 고분해능 TEM 및 XPS 분석들로부터 Ti-Si-N 코탱막은 나노미터 크기의 TiN결정체들이 비정질 Si3N4 기지에 분산된 나노복합체의 마세구조를 냐타내었다. 코탱막의 경도는 11 at.%의 Si 함량에서 39 GPa의 최 고 경도값을 나타내었고 이 경우 미셰조직은 5nm 크기의 미세한 TiN 결정이 비정절상의 기지에 균일하게 분포된 특성을 보였다 .. Ti-Si-N 박막내에 Si 함량이 증가할수록 TiN 결정 상들은 다배향성을 나타내었고 크기가 감소하였으며 비정질상에 의해 완전히 둘려싸언 형상 으로 변화하였다. 높은 Si 함량에서는 질소 소스의 부족현상에 의하여 코팅막내에서 free Si 가 나타났다. 상대습도가 증가함에 따라 Ti-Si-N 코탱막의 마찰계수와 마모량이 현저하게 감소하였다. 강재에 대한 Ti-Si-N 코팅막의 마모거동에 있어서 Si02 냐 Si(OH)2 같은 얇은 윤활막의 형성이 중요한 역할을 하는 것으로 판단되어졌다.

• Journal of the Korean Ceramic Society
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• v.25 no.5
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• pp.502-508
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• 1988

The $\alpha$ to $\beta$ phase transformation of $\alpha$-Si3N4 whisker and related microstructural changes have been investigated. When only $\alpha$-Si3N4 whisker was heat treated in the range 1650~175$0^{\circ}C$, the $\alpha$ to $\beta$ phase transformation occured. In this case, it eas suggested that the oxygen content in $\alpha$-Si3N4 whisker affected the transformation behavior. Although $\alpha$-Si3N4 whisker with Si was heat treated under the same condition, however, the variation of $\beta$- fraction had a similar tendency with heat treating time. Therfore, it was considered that the oxygen content in $\alpha$-Si3N4 whisker affected the transformation behavior dominently rather than the content of added Si. The added $\beta$ phase did not affect the transformation behaviro of $\alpha$-Si3N4 whisker.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.151-151
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• 2003

열화학기상증착법(Thermal-CVD)을 이용하여 SOI(snilicon-on-insulator)기판과 실리콘기판 상에 단결정 3C-SiC 이종박막을 동시에 성장하고, 그 특성을 비교 분석하였다. 결정성 평가로는 X-선 회절(XRD)분석과 Raman 산란 분광분석, 그리고 투과전자현미경을 이용하였고, 잔류 웅력 비교 분석으로는 laser scanning 방법 과 Raman 산란 분광분석의 3C-SiC LO peak의 위치변화, 그리고 X-선 회절분석의 3C-SiC(004) peak의 위치변화를 이용하였다. 그 결과 SOI 기판과 실리콘 기판상에 고품위의 단결정 3C-SiC 박막이 성장됨을 확인하였고, SOI 기판을 사용한 경우 실리콘 기판에 비해 성장된 3C-SiC 이종박막의 잔류 응력이 실제로 감소됨을 확인하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.274-274
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• 2008

This paper describes on the fabrication and characteristics of a 3C-SiC (Silicon Carbide) micro pressure sensor for harsh environment applications. The implemented micro pressure sensor used 3C-SiC thin-films heteroepitaxially grown on SOI (Si-on-insulator) structures. This sensor takes advantages of the good mechanical properties of Si as diaphragms fabricated by D-RIE technology and temperature properties of 3C-SiC piezoresistors. The fabricated pressure sensors were tasted at temperature up to $250^{\circ}C$ and indicated a sensitivity of 0.46 mV/V*bar at room temperature and 0.28 mV/V*bar at $250^{\circ}C$. The fabricated 3C-SiC/SOI pressure sensor presents a high-sensitivity and excellent temperature stability.

• Journal of the Korean Ceramic Society
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• v.32 no.10
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• pp.1212-1218
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• 1995

Al2O3-coated SiC composite powder and mechanically mixed Al2O3-SiC composite powder were synthesized using Al-isopropoxide and commercial SiC as the starting materials. Experiment results showed that the sinterability of Al2O3-coated SiC composite powder was more improved than the mechanically mixed Al2O3-SiC composite powder by the effect of homogeneous coating of alumina around SiC particles. Hence, the mechanical properties of the former was also much more improved than the latter.

• Journal of Korea Foundry Society
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• v.33 no.6
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• pp.233-241
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• 2013

Effect of Fe and Mn contents on the castability of Al-9wt%Si-xMg-yFe-zMn alloy has been studied. The alloy was composed of ${\alpha}$-Al phase, Al+eutectic Si phase, ${\beta}$-Al5FeSi compound and chinese script ${\alpha}$-$Al_{15}(Mn,Fe)_3Si_2$ compound. ${\beta}$-$Al_5FeSi$ and ${\alpha}$-$Al_{15}(Mn,Fe)_3Si_2$ compounds assumed to effect the fluidity and shrinkage behaviors of the alloy during solidification due to the crystallization of ${\alpha}$-$Al_{15}(Fe,Mn)_3Si_2$ and ${\beta}$-$Al_5FeSi$ compounds above eutectic temperature. As Fe and Mn contents of Al-9wt%Si-0.3wt%Mg system alloy increased from 0.15wt% to 0.6wt% and from 0.3wt% to 0.7wt%, fluidity of the alloy decreased by 5.7% and 3.3%, respectively. And as Mg content of Al-9wt%Si-0.45wt%Fe-0.5wt%Mn system alloy increased from 0.3wt% to 0.4wt%, fluidity of the alloy decreased by 8.6%. When Fe content of the alloy increased from 0.15wt% to 0.6wt%, macro shrinkage ratio decreased from 6.1% to 4.1%, and micro shrinkage ratio increased from 0.04% to 0.24%. Similarly, Mn content of the alloy increased from 0.3wt% to 0.7wt%, macro shrinkage ratio decreased from 6.0% to 4.5% and micro shrinkage ratio increased from 0.12% to 0.18%. Judging from the castability of the alloy, Al-9wt%Si-0.3wt%Mg alloy with low content of Fe and Mn, 0.1wt% Fe and 0.3wt% Mn, is recommendable.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.364-371
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• 2013

The sintering behavior of monolithic SiC is examined using the binary sintering additive of $Al_2O_3$-rare earth oxide ($RE_2O_3$, where RE = Sc, Nd, Dy, Ho, or Yb). Through hot pressing at 20 MPa and $1750^{\circ}C$ for 1 h in an Ar atmosphere for 52 nm fine ${\beta}$-SiC powder added with 5 wt% sintering additive, a SiC density of > 97% is achieved, which indicates the effectiveness of $Al_2O_3-RE_2O_3$ system as a sintering of additive for SiC. Based on this result, 7 wt% of $Al_2O_3-Sc_2O_3$ is tested as an additive system for the fabrication of a continuous SiC fiber-reinforced SiC-matrix composite ($SiC_f$/SiC). Electrophoretic deposition combined with the application of ultrasonic pulses is used to efficiently infiltrate the matrix phase into the voids of $Tyranno^{TM}$-SA3 fabric. After hot pressing, a composite density of > 97% is obtained, along with a maximum flexural strength of 443 MPa.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.481-486
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• 1997

It was succeeded in synthesizing the $Al_2O_3$-SiC refractory powders, which is main raw material of AlSiCa, from the domestic Hadong Kaolin. The oxidation reaction of the synthesized $Al_2O_3$-SiC powder was examined. The activation energy for SiC in $Al_2O_3$-SiC powder was calculated to be $\Delta$G=74.86 KJ/mol in air, however the poor sinterability of the powders is thought to be due to the vaporization of SiC in $H_2$ atmosphere. The formation of the whisker-SiC gives the possibility in use for high temperature structural material over high temperature refractory brick.

• Advanced Composite Materials
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• v.18 no.4
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• pp.339-350
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• 2009

Al-Fe-V-Si alloys reinforced with SiC particles were prepared by multi-layer spray deposition technique. Both microstructures and mechanical properties including hardness and tensile properties development during hot exposure process of Al-8.5Fe-1.3V-1.7Si, Al-8.5Fe-1.3V-1.7Si/15 vol% $SiC_P$ and Al-10.0Fe-1.3V-2Si/15 vol% $SiC_P$ were investigated. The experimental results showed that an amorphous interface of about 3 nm in thickness formed between SiC particles and the matrix. SiC particles injected silicon into the matrix; thus an elevated silicon concentration was found around $\alpha-Al_{12}(Fe,\;V)_3Si$ dispersoids, which subsequently inhibited the coarsening and decomposition of $\alpha-Al_{12}(Fe,\;V)_3Si$ dispersoids and enhanced the thermostability of the alloy matrix. Moreover, the thermostability of microstructure and mechanical properties of Al-10.0Fe-1.3V-2Si/15 vol% $SiC_P$ are of higher quality than those of Al-8.5Fe-1.3V-1.7Si/15 vol% $SiC_P$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.18-19
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• 2008

Polycrystalline(poly) 3C-SiC film is a promising structural material for M/NEMS used in harsh environments, bio and fields. In order to realize poly 3C-SiC based M/NEMS devices, the electrical properties of poly 3C-SiC film have to be optimized. The n-type poly 3C-SiC thin film is deposited by APCVD using HMDS$(Si_2(CH_3)_6)$ as single precursor and are in-situ doped using N2. Resistivity values as low as 0.014 $\Omega$cm were achieved. The carrier concentration increased with doping from $3.0819\times10^{17}$ to $2.2994\times10^{19}cm^{-3}$ and electronicmobility increased from 2.433 to 29.299 $cm^2/V{\cdot}s$.