• Title/Summary/Keyword: $Si_{3}N_{4}

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Rapid Heating of Ultrafine $Si_3N_4$ Powder Compacts under the Controlled Thermograms (가열이력 제어에 의한 $Si_3N_4$ 미분말 시편의 급속가열)

  • 이형직
    • Journal of the Korean Ceramic Society
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    • v.30 no.3
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    • pp.181-188
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    • 1993
  • The sintering and renitridation behaviors of ultrafine Si3N4 powder compacts, which were heavily oxidized and/or free-Si rich, were investigated with particular attentiion to microstructures. The specimens were heated without restoring to additives and pressure by controlling heating process attained a Xe image apparatus. The effect of particle size, free-Si contents, decomposition and renitridation, were investigated. When fired to 1$650^{\circ}C$ within 15 sec and then immediately held at 135$0^{\circ}C$ for 10min N2 atmosphere, significant densification took place in the limited region, in addition to decreasing oxygen contents to less than 0.3wt%. On the other hand, specimens decomposed due to overheating at the initial stage were rapidly renitridated at the relatively lower temperature of the holding stage. And, then, the activation energy for the renitridation was calculated to be 49kcal/mole.

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Closed field unbalanced magnetron sputtering system을 이용하여 증착한 CrZr-Si-N 박막의 고온 안정성과 내 마모 특성 연구

  • O, Seung-Cheon;Kim, Gwang-Seok;Kim, Beom-Seok;Lee, Sang-Yul
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2008.11a
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    • pp.61-62
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    • 2008
  • Closed field unbalanced magnetron sputtering 방법을 이용하여 CrZr-Si-N 박막을 증착하였다. Si Target power의 변화에 따라 박막을 증착하여 XRD, SEM, XPS, GDOES, AFM, XPS, Nanoindentation을 이용하여 박막의 미세구조, 성분분석, 표면 조도, 경도를 측정하였다. $500^{\circ}C$에서 annealing한 후 상온에서의 박막의 경도와 비교하였고, 상온과 $500^{\circ}C$에서 마모 실험을 행한 후 마찰 계수를 측정하여 비교하였다. $Cr_{39.4}Zr_{12.3}N_{48.3}$ 박막은 $500^{\circ}C$ annealing 후 경도는 30 GPa에서 24 GPa로 감소하였고 마찰계수는 0.23에서 0.81로 약 4배 증가하였다. $500^{\circ}C$ annealing 후 $Cr_{34.6}Zr_{10.6}-Si_{6.4}-N_{48.4}$ 박막의 경도는 30 GPa로 상온에서의 경도 32 GPa과 비슷하였고 $500^{\circ}C$와 상온에서 수행된 마모시험 결과는 $500^{\circ}C$에서 마찰계수 0.43으로 상온 마모시험 결과와 거의 비슷한 결과를 보였다. 상온의 경우 Si 함량에 따른 기계적 특성 및 마모특성의 변화는 거의 없었다. 그러나 $500^{\circ}C$ annealing 후 CrZi-Si-N 박막의 기계적 특성 및 마모특성은 Si 함량에 따라 큰 차이를 나타내었다. 이러한 결과들을 통해 Si 첨가가 CrZrN 박막의 고온 안정성 향상에 기여함을 확인할 수 있었다.

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The Silicon Nitride Films according to The Frequency Conditions of Plasma Enhanced Chemical Vapor Deposition (PECVD의 주파수 조건에 따른 $SiN_x$막 증착)

  • Choi, Jeong-Ho;Roh, Si-Cheol;Jung, Jong-Dae;Seo, Hwa-Il
    • Journal of the Semiconductor & Display Technology
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    • v.13 no.4
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    • pp.21-25
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    • 2014
  • The silicon nitride ($SiN_x$) film for surface passivation and anti-reflection coating of crystalline silicon solar cell is very important and it is generally deposited by plasma enhanced chemical vapor deposition (PECVD). PECVD can be divided into low and high frequency method. In this paper, the $SiN_x$ film deposited by low and high frequency PECVD method was studied. First, to optimize the $SiN_x$ film deposited by low frequency PECVD method, the refractive index was measured by varying the process conditions like $SiH_4$, $NH_3$, $N_2$ gas rate, and RF power. When $SiH_4$ gas rate was increased and $NH_3$ gas rate was decreased, the refractive index was increased. The refractive index was also increased with RF power decline. Second, to compare the characteristics of the low and high frequency PECVD $SiN_x$ film, the refractive index was measured by varying $NH_3/SiH_4$ gas ratio and RF power and the minority carrier lifetime of before and after high temperature treatment process was also measured. The refractive index of both low and high frequency PECVD $SiN_x$ film was decreased with increase in $NH_3/SiH_4$ gas ratio and RF power. After high temperature treatment process, the minority carrier lifetime of both low and high frequency PECVD $SiN_x$ film was increased and increased degree was similar. The minority carrier lifetime of low frequency PECVD $SiN_x$ was increased from $11.03{\mu}m$ to $28.24{\mu}m$ and that of high frequency PECVD $SiN_x$ was increased from $11.60{\mu}m$ to $27.10{\mu}m$.

Tribology of Si3N4 Ceramics Depending on Amount of Added SiO2 Nanocolloid (SiO2 나노 콜로이드 첨가량에 따른 질화규소의 트라이볼러지)

  • Nam, Ki-Woo;Chung, Young-Kyu;Hwang, Seok-Hwan;Kim, Jong-Soon;Moon, Chang-Kwon
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.35 no.3
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    • pp.267-272
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    • 2011
  • We analyzed the wear characterization of $Si_3N_4$ ceramics according to the amount of added $SiO_2$ nanocolloid. The test specimen was prepared by hot-press sintering at 35 MPa and 2123 K in an $N_2$ gas atmosphere for 1 h. A wear test was performed with a block-on-ring tester, and the test conditions were as follows: (1) the ring with a diameter of 35 mm had a rotational speed of 50 rpm; (2) the load was 9.8 N; and (3) the temperature was $25^{\circ}C$. The test results show that $Si_3N_4$ ceramics have a friction coefficient of about 1.0 and a wear loss of about 0.02 mm. Of the specimens used this study, the test specimen with 1.3 wt% of added $SiO_2$ nanocolloid has the best wear resistance because it has the lowest friction coefficient and the smallest wear loss. This specimen also has the highest Vickers hardness and bending strength. In this study, the friction coefficient is inversely proportional to the hardness and bending strength.

Deposition of Spacer-Si3N4 Thin Film for WSi2 Word-Line and Bit-Line (WSi2 word-line 및 bit-line용 spacer-Si3N4 박막의 증착)

  • Ahn S.;Kim D.W.;Kim J.H;Ahn S.J.;Kim Y.J.;Kim H.S.
    • Korean Journal of Materials Research
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    • v.14 no.6
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    • pp.402-406
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    • 2004
  • $WSi_2$, $TiSi_2$, $CoSi_2$, and $TaSi_2$ are general silicides used today in semiconductor devices. $WSi_2$ thin films have been proposed, studied and used recently in CMOS technology extensively to reduce sheet resistance of polysilicon and $n^{+}$ region. However, there are several serious problems encountered because $WSi_2$ is oxidized and forms a native oxide layer at the interface between $WSi_2$ and $Si_3$$N_4$. In this study, we have introduced 20 $slm-N_2$ gas from top to bottom of the furnace in order to control native oxide films between $WSi_2$ and $Si_3$$N_4$ film. In resulting SEM photographs, we have observed that the native oxide films at the surface of $WSi_2$ film are removed using the long injector system.

Electrochemical Properties of a Si3N4 Dielectric Layer Deposited on Anodic Aluminum Oxide for Chemical Sensors

  • Jo, Ye-Won;Lee, Sung-Gap;Yeo, Jin-Ho;Lee, Dong-Jin
    • Transactions on Electrical and Electronic Materials
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    • v.17 no.3
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    • pp.159-162
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    • 2016
  • We studied an electrolyte-dielectric metal (EDM) device based on a Si3N4 layer-coated anodic aluminium oxide (AAO) template for chemical sensors. The AAO templates were fabricated using a two-step anodization procedure at 0℃ and 70 V in 0.3 M oxalic acid, after which the Si3N4 was deposited on them using plasma enhanced chemical vapor deposition (PECVD). The average pore size was approximately 106 nm and the depth of the AAO templates was 24.6 nm to 86.5 nm. The Si3N4 layer-coated AAO is more stable than a single AAO template.

Mechanistic Aspects in the Grignard Coupling Reaction of Bis(chloromethyl)dimethylsilane with Trimethylchlorosilane

  • 조연석;유복렬;안삼영;정일남
    • Bulletin of the Korean Chemical Society
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    • v.20 no.4
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    • pp.422-426
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    • 1999
  • The Grignard reactions of bis(chloromethyl)dimethylsilane (1) with trimethylchlorosilane (2) in THF give both the intermolecular C-Si coupling and intramolecular C-C coupling products. At beginning stage, 1 reacts with Mg to give the mono-Grignard reagent ClCH2Me2SiCH2MgCl (1) which undergoes the C-Si coupling reaction to give MC2Si(CH2SiMe3)2 3, or C-C coupling to a mixture of formula Me3SiCH2(SiMe2CH2CH2)nR1 (n = 1, 2, 3, ..; 4a, R1I = H: 4b, R1 = SiMe3). In the reaction, two reaction pathways are involved: a) Ⅰ reacts with 2 to give Me3SiCH2SiMe2CH2Cl 6 which further reacts with Mg to afford a Me2SiCH2Mel-SiCH2MgCl (Ⅱ) or b) I cyclizes intramolecularly to a silacyclopropane intermediate A, which undergoes a ring-opening polymerization by the nucleophilic attack of the intermediates I or Ⅱ, followed by the termination reaction with H2O and 2, to give 4a and 4b, respectively. As the mole ratio of 2/1 increased from 2 to 16 folds, the formation of product 3 increased from 16% to 47% while the formation of polymeric products 4 was reduced from 60% to 40%. The intermolecular C-Si coupling reaction of the pathway a becomes more favorable than the intramolecular C-C coupling reaction of the pathways b at the higher mole ratio of 2/1.

Rolling Fatigue Life of Silicon Nitride Ceramic Balls (질화규소 세라믹볼의 구름피로수명)

  • 최인혁;박창남;최헌진;이준근;신동우
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 1999.06a
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    • pp.119-126
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    • 1999
  • The rolling fatigue lives (RFL) of five kinds of silicon nitride balls were investigated. Four kinds of Si$_3$N$_4$ balls were fabricated using different raw materials, sintering aids and sintering conditions, Commercially available Si3N4 ball was also studied for comparison. All the balls were finished up to the dimensional accuracy of Grade 10 defined in KS B 2001 (Steel Balls for Ball Bearings) with a size of 9.525mm. RFL tests were then conducted under the initial theoretical maximum contact stress 6.38 GPa and the spindle speed 10,000 rpm. Gear oil was provided by oiled race as lubricant. The results of RFL test indicated the prerequisitic conditions for the long rolling life of Si$_3$N$_4$ball : (1) the high density, (2) mjcrostructures consisted of small uniformly distributed grains, (3) little glassy phase in grainboundary, and (4) little crystalline phase and secondary phase that induces residual thermal stress due to the differences of thermal expansion coefficient with Si$_3$N$_4$Phase.

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Rolling Fatigue Life of Silicon Nitride Ceramic Balls (질화규소 세라믹볼의 구름피로수명)

  • 최인혁;박창남;최헌진;이준근;신동우
    • Tribology and Lubricants
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    • v.15 no.2
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    • pp.150-155
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    • 1999
  • The rolling fatigue lives (RFL) of five kinds of silicon nitride balls were investigated. Four kinds of Si$_3$N$_4$balls were fabricated using different raw materials, sintering aids and sintering conditions. Commercially available Si$_3$N$_4$ball was also studied for comparison. All the balls were finished up to the dimensional accuracy of Grade 10 defined in KS B 2001 (Steel Balls fer Ball Bearings) with a size of 9.525 mm. RFL tests were then conducted under the initial theoretical maximum contact stress 6.38 GPa and the spindle speed 10,000 rpm. Gear oil was provided by oiled race as lubricant. The results of RFL test indicated the prerequisitic conditions for the long rolling life of Si$_3$N$_4$ball : (1) the high density, (2) microstructures consisted of small uniformly distributed grains, (3) little glassy phase in grainboundary, and (4) little crystalline phase and secondary phase that induces residual thermal stress due to the differences of thermal expansion coefficient with Si$_3$N$_4$phase.

Effect of Yttria and Ceria on Mechanical Properties and Oxidation Behaviors of $\alpha$-Sialon Ceramics ($\alpha$-Sialon 세라믹스의 역학적 성질과 산화거동에 미치는 $Y_2O_3$$CeO_2$의 첨가영향)

  • 이은복;이홍림;조덕호;박원철
    • Journal of the Korean Ceramic Society
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    • v.30 no.11
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    • pp.941-948
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    • 1993
  • The powder mixture of Si3N4-AlN-Y2O3, Si3N4-AlN-CeO2 and Si3N4-AlN-Y2O3-CeO2 system was hot-pressed at 175$0^{\circ}C$ for 2h in N2 to prepare $\alpha$-Sialon ceramics. The mechanical property and oxidation behaviour of the prepared $\alpha$-Sialon ceramics were investigated. At 120$0^{\circ}C$, oxidation resistance was best for the Y2O3 added $\alpha$-Sialon ceramics and oxidation rate increased when the amount of CeO2 increased. But when the mixture of Y2O3 and CeO2 added $\alpha$-Sialon ceramics showed a good oxidation resistance. Fracture toughness of (Y2O3+CeO2) added $\alpha$-Sialon ceramics was higher than Y2O3 added $\alpha$-Sialon ceramics.

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