• Journal of the Korean Ceramic Society
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• v.33 no.6
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• pp.709-717
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• 1996

Design parameter of Si3N4 for engineering part could be calculated through the measurement of tensile strength with cylindrical specimen($\Phi$=7.15, ι=110mm) Relative densities of Si3N4 test specimen prepared by pressure-less sintering (PLS) and sinter/HIP were 98.5 and 99.2% respectively. Tensile strength of Si3N4 was 378 MPa for PLS and 509 MPa for sinter/HIP. By the Weibull statistic Design parameter such as Weibull modulus m=8-12 could be calcuated. Fracture strength of Si3N4 related to volume could be effectively pridicted by using Weibull theory.

• Journal of the Korean Ceramic Society
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• v.49 no.4
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• pp.363-368
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• 2012

Nitriding and post-sintering behavior of powder mixture compacts were investigated. As mixture compacts are different from simple Si compacts, the fabrication of a sintered body with a mixture composition has engineering implications. In this research, in specimens without a pore former, the extent of nitridation increased with $Si_3N_4$ content, while the highest extent of nitridation was measured in $Si_3N_4$-free composition when a pore former was added. Large pores made from the thermal decomposition of the pore former collapsed, and they were filled with a reaction product, reaction-bonded silicon nitride (RBSN) in the $Si_3N_4$-free specimen. On the other hand, pores from the decomposed pore former were retained in the $Si_3N_4$-added specimen. Introduction of small $Si_3N_4$ particles ($d_{50}=0.3{\mu}m$) into a powder compact consisting of large silicon particles ($d_{50}=7{\mu}m$) promoted close packing in the green body compact, and resulted in a stable strut structure after decomposition of the pore former. The local packing density of the strut structure depends on silicon to $Si_3N_4$ size ratio and affected both nitriding reaction kinetics and microstructure in the post-sintered body.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.4
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• pp.558-563
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• 1996

Fracture strength of $Si_{3}N_{4}/20$ vol% SiC nanocomposites with fifferent sintering additives was measured. Strength of nanocomposites with 6 wt% $Y_{2}O_{3}$ and 2 wt% $Al_{2}O_{3}$ as sintering additives was higher at room temperature but significant strength degradation at elevated temperature was occured due to the softening of grain boundary phase. Fracture strength of 8 wt% $Y_{2}O_{3}$ doped sample was higher than that of $Al_{2}O_{3}$ added sample at $1400^{\circ}C$. The retention of high temperature strength in 8 wt% $Y_{2}O_{3}$ doped sample can be attributed to high softening temperature and crystallization of grain boundary glassy phase.

• Journal of the Korean Ceramic Society
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• v.31 no.1
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• pp.69-73
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• 1994

Si3N4 ceramics could be densified above 3.2g/㎤ with pressureless sintering at below 178$0^{\circ}C$ by coating Si3N4 and Y2O3 powder with an alumina sol. Substitution a portion of Al2O3 with AlN improved densification. Additional milling of the coated powder in large improvement in bending strength greater than 800 MPa (4-point).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.105-108
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• 1998

Pt-WO$_3$-Si$_3$N$_4$-SiO$_2$-Si-Al 캐패시터를 이용한 NO$_2$ 가스 센서를 개발하였다. 표준 실리콘 MNOS구조에 촉매 게이트로 Pt와 가스 흡착층으로 WO$_3$를 이용함으로서 전통적인 세라믹 가스 센서보다 낮은 온도에서 NO$_2$ 가스를 감지할 수 있었다. 은도 변화와 NO$_2$ 가스 농도의 변화에 따라서 디바이스의 NO$_2$ 가스 감도를 조사하였다. Pt-WO$_3$ 계면에서 NO$_2$ 이온농도의 변화에 기초로 한 가스 감지 모델을 제시하였다. 제시된 가스 감지 모델을 계면에서의 가스 반응 속도론에 의하여 분석함으로서 확인하였다.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1988.06a
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• pp.39-42
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• 1988

요업체 절삭공구(ceramic tool)는 공구강이나 초경제품에 비해 고속 절삭 작업이 가능하며 생산성을 높일 수 있기 때문에 최근 주목을 받고 있다. 본 실험에서 모재(substrate)로 사용된 $Si_3N_4$-TiC ceramic은 요업체 공구중에서 파괴인성이 우수하며, 주철이나 초합금을 절삭할 때 우수한 성능을 나타낸다. 그러나 요업체 절삭공구중에서 경도가 낮은 편에 속하며, Fe,Mn,O와 $Si_3N_4$가 화학적 반응을 일으켜서, steel을 절삭할 때 상면 마모(crater wear)가 심하게 발생하기 때문에 우수한 성능을 나타내지 못하고 있는 실정이다. 따라서 이러한 단점을 보완하기 위해 공구의 표면에 보호피막(protective coating)을 입히는 것은 필수적이다. 본 연구에서는 반응변수들이 TiC 및 TiN 증착층의 증착속도, 미세구조, 화학적 조성 및 증착층과 substrate 사이의 interface를 조사하여 각 증착층의 최적증착조건을 규명하고자 한다.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.141-149
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• 1998

The W thin films were deposited on Si3N4 by a PECVD technique. The effects of substrate temperature and gas flow ratio on the properties of the W films were investigated. The deposition of W films were limited by surface reaction at the temperature range of 150>~$250^{\circ}C$, W films had the deposition rate of 150~530 $\AA$/min and stress of 0.85~$14.35\times10 ^9 \textrm {dynes/cm}^2}$ at various substrate temperatures and $SiH_4/WF_6$ flow ratios. $SiH_4/WF_6$ flow ratio affected the deposition rate and stress of the W films, expecially, excessive flow of SiH4 abruptly changed the structure, chemical bonding, and stress of the W films. Among the deposited W films on TiN, Ti, Mo, NiCr and Al adhesion layer, the one on the Al had the best adhesion property.

• Proceedings of the Optical Society of Korea Conference
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• 2005.07a
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• pp.46-47
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• 2005

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.05a
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• pp.72-72
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• 1997

• Proceedings of the Materials Research Society of Korea Conference
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• 2004.05a
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• pp.44-44
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• 2004