• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.251.1-251.1
• /
• 2014

Oraganic Light Emitting Diodes (OLED) 소자의 광추출 효율을 향상시키기 위한 방안으로 나노급 사이즈의 고 굴절률 패턴을 기판의 내부 패턴에 적용하였다. 100 nm 및 300 nm의 직경을 갖는 Si3N4 나노 패턴을 나노 임프린트 리소그래피와 건식 식각 공정을 통하여 OLED의 유리기판에 형성을 하였다. 그리고 Silicon On Glass (SOG) 물질을 패턴이 전사된 기판에 스핀 코팅으로 평탄화 공정을 진행 함으로써 OLED소자의 전기적인 특성이 떨어지는 문제점을 개선하였다. 그러고 나서 Si3N4 나노 패턴이 형성되고 평탄화 공정을 마친 기판상 OLED 소자를 제작하였다. OLED의 발광층에서 발생한 빛은 Si3N4 나노패턴에 의해 산란되어 광 추출 효율을 개선할 수 있다. 본 연구에서 두 가지 종류 100nm, 300nm 높이의 Si3N4 나노패턴으로 높이에 따른 광 추출 효율을 비교하고자 OLED 소자를 제작하였다. 기판에 Si3N4 패턴이 형성된 OLED의 효율은 Si3N4 300nm에서 13.1% 증가하였다.

• Korean Journal of Materials Research
• /
• v.14 no.5
• /
• pp.358-362
• /
• 2004

$Si_3$$N_4$ ceramics have been identified as one of the promising structural ceramics. This study has been carried out to investigate of the synthetic behaviors of $Si_3$$N_4$ derived from domestic silica-stone by direct nitriding method. The silicon nitridation reaction has been studied in the temperature range of $1300～1550^{\circ}C$. Below the $1400^{\circ}C$, the nitriding rate was measured to be 16%. For the temperatures higher than the $1400^{\circ}C$, $\beta$-$Si_3$$N_4$ phase was formed mainly, and the nitriding rate showed above 98%. With the increasing of sample weight of silicon powder, the nitriding rate and $\beta$-$Si_3$$N_4$ phase increased at $1400^{\circ}C$ for 2 hours. The shape and particle size of$ Si_3$$N_4$ powder synthesized at $1400^{\circ}C$ for 2 hours showed the irregular angular-type and 10 $\mu\textrm{m}$, respectively.

• Korean Journal of Materials Research
• /
• v.13 no.6
• /
• pp.389-393
• /
• 2003

The effect of antireflection layer on the reduction of optical loss has been investigated in Si photodiodes detecting red light with central wavelength of 670 nm. The theoretical analysis showed minimum reflection loss of 6% for the $SiO_2$thickness of about $1100∼1200\AA$ in the $SiO_2$-Si system with the single antireflection layer and no reflection loss for the X$N_3$N$_4$$SiO_2$thickness of $2000\AA$/$1200\AA$ in the $Si_3$$N_4$$SiO_2$-Si system with double antireflection layer. In our experiments, Si photodiodes with the web-patterned $p^{＋}$-shallow diffusion region were fabricated by bipolar IC process technology and the devices were classified into three kinds according to the structure of $Si_3$$N_4$/$SiO_2$antireflection layer. The fabricated devices showed maximum spectral response in the optical spectrum of 650∼700 nm. The average photocurrents of the devices with the $Si_3$$N_4$$SiO_2$thickness of $1000\AA$/X$SiO\AA$, and $2000\AA$$1800\AA$ under the incident power, of -17 dBm were 3.2 uA, 3.5 uA and 3.1 uA, respectively.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.458-458
• /
• 2010

The process window for the etch selectivity of silicon nitride ($Si_3N_4$) layers to extreme ultra-violet (EUV) resist and variation of line edge roughness (LER) of EUV resist were investigated durin getching of $Si_3N_4$/EUV resist structure in a dual-frequency superimposed capacitive coupled plasma (DFS-CCP) etcher by varying the process parameters, such as the $CH_2F_2$ and $N_2$ gas flow rate in $CH_2F_2/N_2$/Ar plasma. The $CH_2F_2$ and $N_2$ flow rate was found to play a critical role in determining the process window for infinite etch selectivity of $Si_3N_4$/EUV resist, due to disproportionate changes in the degree of polymerization on $Si_3N_4$ and EUV resist surfaces. The preferential chemical reaction between hydrogen and carbon in the hydrofluorocarbon ($CH_xF_y$) polymer layer and the nitrogen and oxygen on the $Si_3N_4$, presumably leading to the formation of HCN, CO, and $CO_2$ etch by-products, results in a smaller steady-state hydrofluorocarbon thickness on $Si_3N_4$ and, in turn, in continuous $Si_3N_4$ etching due to enhanced $SiF_4$ formation, while the $CH_xF_y$ layer is deposited on the EUV resist surface. Also critical dimension (and line edge roughness) tend to decrease with increasing $N_2$ flow rate due to decreased degree of polymerization.

• Journal of the Korean Ceramic Society
• /
• v.37 no.4
• /
• pp.381-387
• /
• 2000

Si3N4/stainless steel 316 joints with Ni buffer layer were fabricated by direct active brazing method (DIB) using Ag-Cu-Ti brazing alloy only and double brazing method (DOB) using Ag-Cu brazing alloy with Si3N4 pretreated with Ag-Cu-Ti brazing alloy. For the joint brazed by DIB method, Ti was segregated at the Si3N4/brazing alloy interface, but was not enough to form a stable joint interface. In addition, large amounts of Ni-Ti inter-metallic compounds were formed in tehbrazing alloy near the joint interface, which could deplete the contents of Ti involved in the interfacial reaction. However, for the joint brazed by DOB method, segregation of Ti at the joint interface were enough to enhance the formation of stable interfacial reaction products such as TiN and Ti-Si-Ni-N-(Cu) multicompounds, which restricted the formation of Ni-Tio inter-metallic compounds in the brazing alloy during brazing with Ni buffer layer. Fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was much improved by using DOB method rather than DIB method. It could be deduced that the differences of fracture strength of the joint with Ni buffer layer depending on brazing process adapted were directly affected by the formation of stable joint interface and the change in microstructure of the brazing alloy near the joint interface. It was found that fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was gradually reduced as the thickness of interface. It was found that fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was gradually reduced as the thickness of Ni buffer layer in the joint was increased from 0.1 mm to 10 mm. It seems to due to the increased residual stress in the joint as the thickness of Ni buffer layer is increased. The maximum fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was 386 MPa, and the fracture of joint was originated at Si3N4/brazing alloy joint interface and propagated into Si3N4 matrix.

• Journal of IKEEE
• /
• v.24 no.2
• /
• pp.409-418
• /
• 2020

In this paper, an integrated optical, evanescent-wave biosensor utilizing a multimode interferometer based on a Si₃N₄ rib-optical waveguide consisting of the Si/SiO₂/Si₃N₄/SiO₂ stacked structure was described. The theoretical background of the multimode interferometer was reviewed, and the structure and design process were presented through numerical computational analysis. We analyzed how the dimension (length, width) of the multimode interferometer affected the sensor performance. It has been confirmed through computational analysis that the changes in the refractive index of an analyte greatly affect the mode pattern formation position and output optical power of a multimode interferometer, and proved that this principle could be applied to integrated-optic biosensor.

• Journal of Powder Materials
• /
• v.8 no.3
• /
• pp.210-213
• /
• 2001

$Si_3N_4$/TiN nano/nano-type composites were successfully fabricated by the combination of a mechano-chemical grinding (MCG) method and a short time sintering process, and their wear resistance was evaluated. Powder mixtures of $\alpha-Si_3N_4$and Ti were prepared using mechano-chemical grinding process and the resulting nanocomposite powder mixtures were consolidated using pulsed electric current sintering (PECS). TEM observation showed that the nano/nano-type composites consisted of homogeneous and very fine matrix grains with the size less than 100 nm. The obtained $Si_3N_4$-based nano/nano-type showed high wear resistance and electric discharge machinability.

• Journal of the Korean Vacuum Society
• /
• v.1 no.1
• /
• pp.183-189
• /
• 1992

The characteristics of N/O(SiOz/SisN4) film on WSi2 are compared with storage node Poly-Si. Leakage current and breakdown voltage are improved and storage capacitance is decreased. The oxidation rate of WSiz is more rapid than polycrystalline silicon. Thus the thick bottom oxide on the WSiz causes to the decrease of capacitance. The out diffusion of dopant impurity in polycrystalline silicon through the silicide leads to the formation of a depletion region in the polycrystalline silicon and the decrease of depletion capacitance. That results in the decrease of the overall storage capacitance.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.263-263
• /
• 2011

본 연구에서는 DBD (Dielectric Barrier Discharge)방식의 상압 플라즈마를 이용하여 FPD (flat panel display) 공정에 사용되는 a-Si, Si3N4의 식각 공정 특성을 평가하였다. 사용된 DBD 반응기는 기존의 blank planar plate 형태의 Power가 인가되는 anode 부분과 Dielectric Barrier 사이 공간을 액상의 도전체로 채워 넣은 형태의 전극이 사용 하였으며, 인가 Power는 40kHz AC 최대인가 전압 15 kVp를 사용 하였다. 방전 가스는 N2, 반응가스로는 CDA (Clean Dry Air)와 NF3, 액상의 Etchant를 사용 하였으며 모든 공정은 In-line type으로 시편을 처리 하였다. NF3의 경우 30 mm/sec 이송속도 1회 처리 기준 a-Si 1300${\AA}$, Si3N4 1900${\AA}$의 식각 두께를 보였으며 a-Si : Si3N4 선택비는 N2, CDA의 조절을 통하여 최대 1:2에서 4:1 정도까지 변화가 가능하였다. 균일도는 G2 (370 mm${\times}$470 mm)의 경우 5.8 %의 균일도를 보이고 있다. 이외에도 NF3 공정의 경우 실제 TFT-LCD 공정 중 n+ channel (n+ a-Si:H)식각 공정에 적용하여 5.5 inch LCD panel feasibility를 확인 할 수 있었다. 액상 Etchant (HF수용액, NH4HF2)는 버블러를 사용하여 기화 시켜 플라즈마 소스를 통해 1차적으로 활성화 시키고 기존 DBD 반응기에 공급해 주는 형태로 평가를 진행하였다. 식각 특성은 30mm/sec 이송속도에서 a-Si $25{\AA}$ 정도로 가스 형태의 Etchant에 비해 매우 낮은 수준이나 Etching rate 향상을 위한 factor 파악 및 개선을 위한 연구를 진행 하였다.

• Journal of the Korean Ceramic Society
• /
• v.26 no.3
• /
• pp.409-415
• /
• 1989

Si3N4-TiN electro-conductive ceramic composites with 7wt% Al2O3＋3wt% Y2O3 or 5wt% MgO as sintering aids were fabricated by pressureless sintering at 1,80$0^{\circ}C$ for 1h. The 3pt. flexural strength, KIC and Vickers hardness were measrued in order to investigate the effects of TiN on the mechanical properties. Also oxidation behavior was observed by measuring the weight gain after exposure to air at 1,10$0^{\circ}C$ for 100h. the reaction products between Si3N4 and TiN was not detected by XRD and EDS. Mechanical properties of the composites were not influenced by the addition of TiN less than 30vol%, but oxidation resistance of the composites was rapidly decreased with the amount of added TiN.