• Korean Journal of Materials Research
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• v.21 no.6
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• pp.352-356
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• 2011

[ $Zn_{2(1-x)}Mn_xSiO_4$ ]$0.07{\leq}x{\leq}0.15$) green phosphor was prepared by solid state reaction. The first heating was at $900^{\circ}C-1250^{\circ}C$ in air for 3 hours and the second heating was at $900^{\circ}C$ in $N_2/H_2$(95%/5%) for 2 hours. The size effect of $SiO_2$ in forming $Zn_2SiO_4$ was investigated. The temperature for obtaining single phase $Zn_2SiO_4$ was lowered from $1100^{\circ}C$ to $1000^{\circ}C$ by decreasing the $SiO_2$ particle size from micro size to submicro size. The effect of the activators for the Photoluminescence (PL) intensity of $Zn_2SiO_4:Mn^{2+}$ was also investigated. The PL intensity properties of the phosphors were investigated under vacuum ultraviolet excitation (147 nm). The emission spectrum peak was between 520 nm and 530 nm, which was involved in green emission area. $MnCl_2{\cdot}4H_2O$, the activator source, was more effective in providing high emission intensity than $MnCO_3$. The optimum conditions for the best optical properties of $Zn_2SiO_4:Mn^{2+}$ were at x = 0.11 and $1100^{\circ}C$. In these conditions, the phosphor particle shape was well dispersed spherical and its size was 200 nm.

• Journal of IKEEE
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• v.21 no.3
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• pp.252-255
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• 2017

$Mo_xW_{1-x}Si_2$ heaters were fabricated by self-propagating high-temperature synthesis (SHS) process and post sintering process. To validate the reliability of the $Mo_xW_{1-x}Si_2$ heaters, the accelerated life test (ALT) was conducted, and then lifetime to $Mo_xW_{1-x}Si_2$ heaters was estimated by using Minitab programs. Also, the failure analysis of $Mo_xW_{1-x}Si_2$ heaters after ALT was performed through electrical and structural properties. As the results, it was confirmed that the dominant failure mode of $Mo_xW_{1-x}Si_2$ heaters is the crack formation in heaters and the delamination of protective $SiO_2$ layers.

• Korean Journal of Materials Research
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• v.9 no.1
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• pp.46-50
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• 1999

$\textrm{Zn}_{2-x}\textrm{Mn}_{x}\textrm{SiO}_{4}$ green phosphors have been prepared by the solution reaction method and the photoluminescence and crystalline properties were studied as a function of both the firing temperature ($900^{\circ}C$~$1200^{\circ}C$) and the concentration of Mn activator (x=0.01~0.20). Under 147 nm and 254nm and excitation sources, the emission intensity of the phosphors was increased about 4 times increasing firing temperatures from $900^{\circ}C$ to $1200^{\circ}C$. From the XRD analysis, $\textrm{Zn}_{2}\textrm{SiO}_{4}$:Mn phosphors fired above $1100^{\circ}C$ showed willemite crystal structure. Under 147nm excitation, the maximum emission intensity was obtained at the Mn concentration of x=0.02 for $\textrm{Zn}_{2-x}\textrm{Mn}_{x}\textrm{SiO}_{4}$ phosphors fired at $1200^{\circ}C$ and the concentration quenching was occurred at the Mn concentration above x=0.10. The phosphor particles showed almost spherical shapes with the average size of around 2~3$\mu\textrm{m}$ by the SEM morphology.

• Journal of the Korean Chemical Society
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• v.50 no.3
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• pp.232-236
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• 2006

The Y1.99-xMxCe0.01SiO5(M=Li, La, Nd, and Gd) phosphors were synthesized by solid-state reaction at 1350oC for 10h under reducing atmosphere in order to improve properties of blue emitting phosphors. Compared with commercial blue phosphors, the Y2SiO5:Ce blue phosphors substituted with various elements showed significant enhancement of the emission intensity. Particularly, 1 mol% Li doped Y2SiO5:Ce phosphors indicated the maximum emission intensity in the photoluminescence spectra. Thanks to SEM analyses revealed that the morphology of Y2SiO5:(Ce,Li) blue phosphors was a pseudo-spherical with particle size of 3m.

• Proceedings of the Optical Society of Korea Conference
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• 1999.08a
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• pp.140-141
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• 1999

• Bulletin of the Korean Chemical Society
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• v.8 no.1
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• pp.6-9
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• 1987

The study of the $Na_3YSi_3O_9$ structure, by x-ray diffraction and infrared spectrum, showed that $Na_3YSi_3O_9$ is similar to $Na_4CaSi_3O_9$ except for its being pseudo-cubic instead of cubic. The peaks in the x-ray diffraction pattern of $Na_3YSi_3O_9$ could therefore be indexed on the basis of the $Na_4CaSi_3O_9$ cell. Also, modified $Na_3MSi_3O_9$ (M = Lu, Yb, Tm, Er, Y, Ho, Dy, Gd, Eu, and Sm) type compounds were synthesized by introducing excess sodium, decreasing M(III) concentration, and substituting small amount of phosphorus for silicon. The unit cell parameters of the composition $Na_{3.2}M_{0.7}Si_{2.9}P_{0.1}O_{8.7}$ were estimated from x-ray powder diffraction patterns using the Cohen method.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.258-263
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• 2000

Effect of microwave heat-treatment processing on the electrical conductivity and crystallization behavior for the $Li_2O-2SiO_2$-xCuO glasses with various CuO contents was compared with that of conventional heat-treatment processing. The electrical conductivities of samples heat-treated at $500^{\circ}C$ by different heat-treatment processing were increased with increasing CuO content and higher electrical conductivities were obtained from microwave heat-treated samples. From the result of XRD analyses, microwave heat-treatment processing enhanced the degree of crystallization in the formation of $Li_2Si_2O_5, Li_2Cu_5$($Si_2O_7)_2$, and $Li_2Cu_2O_3$ crystalline phases. The electrical conductivities of $Li_2O-2SiO_2$-1.3CuO (30 mol% CuO) glass heat-treated at $500^{\circ}C$ for 30 min under conventional and microwave heat-treatment processing were $0.11{\times}10^{-4}(\Omega \textrm {cm})^{-1}$ and $0.68{\times}10^{-4}(\Omega \textrm {cm})^{-1}$ at room temperature, respectively. It was speculated that microwave energy enhanced the degree of crystallization and increased electrical conductivity in the samples.

• Journal of the Korean Chemical Society
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• v.43 no.4
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• pp.384-385
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• 1999

Two anhydrous crystal structures of fully dehydrated, $Ca^{2+}$- and $Tl^+$-exchanged zeolite X, TEX>$Ca_{18}Tl_{56}Si_{100}Al_{92}O_{384}($Ca_{18}Tl_{56}$-X;\alpha=24.883(4)\AA)$ and TEX>$Ca_{32}Tl_{28}Si_{100}Al_{92}O_{384}($Ca_{32}Tl_{28}$-X;\alpha=24.973(4)\AA)$ per unit cell, have been determined by single-crystal X-ray diffraction techniques in the cubic space group Fd3 at $21(1)^{\circ}C.$ $Ca_{18}Tl_{56}-X$ was prepared by ion exchange in a flowing stream of 0.045 M aqueous $Ca(NO_3)_2$ and 0.005 M $TlNO_3$. $Ca_{32}Tl_{28}-X$ was prepared similarly using a mixed solution of 0.0495 M $Ca(NO_3)_2$ and 0.0005M $TlNO_3$. Each crystal was then dehydrated at 360 $^{\circ}C$ and $2{\times}10^{-6}$ Torr for 2 days. Their structures were refined to the final error indices, $R_1=0.039\;and\;R_2=0.036$ with 382 reflections for $Ca_{18}Tl_{56}-X$ , and $R_1=0.046\;and\;R_2=0.045$ with 472 reflections for $Ca_{32}Tl_{28}$-X for which $/>3\sigma(I).$ In the structures of dehydrated $Ca_{18}Tl_{56^-}X\;and\;Ca_{32}Tl_{28}$-X, $Ca^{2+}\;and\;Tl^+$ ions are located at six crystallographic sites. Sixteen $Ca^{2+}$ ions fill the octahedral sites I at the centers of double six rings ($Ca_{18}Tl_{56}$-X:Ca-O=2.42(1) and O-Ca-O=93.06(4)$^{\circ}$; $Ca_{32}Tl_{28}$-X Ca-O=2.40(1) $\AA$ and O-Ca-O=93.08(3)$^{\circ}$). In the structure of $Ca_{18}Tl_{56}$-X, another two $Ca^{2+}$ ions occupy site II (Ca-O=2.35(2) $\AA$ and O-Ca-O=111.69(2)$^{\circ}$) and twenty six $Tl^+$ ions occupy site II opposite single six-rings in the supercage; each is 1.493 $\AA$ from the plane of three oxygens $(Tl-O=2.70(8)\AA$ and O-Tl-O=92.33(4)$^{\circ}$). About four $Tl^+$ ions are found at site II',1.695 $\AA$ into sodalite cavity from their three oxygen plane (Tl-O=2.81 (1) and O-Tl-O=87.48(3)). The remaining twenty six $Tl^+$ ions are distributed over site III'(Tl-O=2.82 (1) $\AA$ and Tl-O=2.88(3)$^{\circ}$). In the structure of $Ca_{32}Tl_{28}$-X, sixteen $Ca^{2+}$ ions and fifteen $Tl^+$ ions occupy site III' (Ca-O=2.26(1) $\AA$ and O-Ca-O=119.14(4)$^{\circ}$; Tl-O=2.70(1) $\AA$ and O-Tl-O=92.38$^{\circ}$) and one $Tl^+$ ion occupies site II'. The remaining twelve $Tl^+$ ions are distributed over site III'. It appears that $Ca^{2+}$ ions prefer sites I and II in that order and $Tl^+$ ions occupy the remaining sites.

• Corrosion Science and Technology
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• v.9 no.2
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• pp.81-86
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• 2010

The mechanisms of selective oxidation of intercritically annealed CMnAl TRIP steels in a Continuous Galvanizing Line (GCL) were studied by cross-sectional observation of the surface and sub-surface regions by means of High Resolution Transmission Electron Microscopy (HR-TEM). The selective oxidation and nitriding of an intercritically annealed CMnAl TRIP steel in a controlled dew point 10%$H_2+N_2$ atmosphere resulted in the formation of c-xMnO.$MnO_2$ (1${\leq}$x<3) and c-xMnO.$Al_2O_3$ ($x{\geq}1$) particles on the steel surface. Single crystal c-xMnO.$SiO_2$ ($2{\leq}x{\leq}4$) oxide particles were also observed on the surface. A thin film of crystalline c-xMnO.$SiO_2$ (2${\leq}$x<3) and c-xMnO.$Al_2O_3$ ($x{\geq}1$) was present between these particles. In the sub-surface region, internal oxidation, nitriding and intermetallic compound formation were observed. In the first region, large crystalline c-xMnO.$SiO_2$ ($1{\geq}x{\geq}2$) and c-xMnO.$Al_2O_3$ ($x{\geq}1$) oxides particles were present. In the second region, c-AlN particles were observed, and in a third region, small $MnAl_x$ (x>1) intermetallic compound particles were observed.

• Journal of the Korean institute of surface engineering
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• v.34 no.1
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• pp.33-38
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• 2001

10cm-diameter Si(100)∥$1.3\mu\textrm{m}$-X$1.3_2$X$1.3\mu\textrm{m}$-$SiO_2$∥Si(100) afers were prepared using a fast linear annealing (FLA) equipment. 1.3$\mu\textrm{m}$-thick $SiO_2$ films were grown by dry oxidation process. After cleaning and premating the wafers in a class 100 clean room, they were heat treated using with the FLA and conventional electric furnace. Bonded area and bond strength of wafer pairs were measured using a infrared (IR) camera and razor blade crack opening method, respectively. It was confinmed that the bonded area by FLA was around 99% and the bond strength value reached 2172mJ/$\m^2$, which is equivalent to theoritical bond strength. Our result implies that thick $SiO_2$ SOI may be prepared more easily by using $SiO_2$$SiO_2$ bonding interfaces then those of Si/$SiO_2$'s.