• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.44-47
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• 2012

The $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ multi layered structure was designed for the possible application of transparent electrodes in PDP (Plasma Display Panel). Multi layered film was deposited on a glass substrate at room temperature by DC/RF magnetron sputtering system and EMP (Essential Macleod Program) was adopted to optimize the optical characteristics of film. During the deposition process, the Ag layer in $TiO_2/Ag/TiO_2$ became heavily oxidized and the filter characteristic was degraded easily. In thus study, Si3N4 layer was used as a diffusion buffer layer between $TiO_2$ and Ag. in order to prevent the oxidation of Ag layer in $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ structure. It was confirmed that $Si_3N_4$ layer is one of candidate materials acting as diffusin barrier between $TiO_2/Ag/TiO_2$.

• Bulletin of the Korean Chemical Society
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• v.34 no.12
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• pp.3635-3640
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• 2013

We prepared Ni and Pd-modified $TiO_2@SiO_2$ core-shell nanostructures and then analyzed them by scanning electron microscopy, optical microscopy, X-ray diffraction crystallography, FT-IR and UV-Visible absorption spectroscopy. In addition, their CO oxidation performance was tested by temperature-programmed mass spectrometry. The CO oxidation activity showed an order of Ni-$TiO_2@SiO_2$ ($900^{\circ}C$) < Ni-$TiO_2@SiO_2$ ($90^{\circ}C$) < Ni-$TiO_2@SiO_2$ ($450^{\circ}C$) in the first CO oxidation run, and greatly improved activity in the same order in the second run. The $T_{10%}$ (the temperature at 10% CO conversion) corresponds to the CO oxidation rate of $2.8{\times}10^{-5}$ molCO $g{_{cat}}^{-1}s^{-1}$. For Ni-$TiO_2@SiO_2$ ($450^{\circ}C$), the $T_{10%}$ was observed at $365^{\circ}C$ in the first run and at $335^{\circ}C$ in the second run. For the Pd-$TiO_2@SiO_2$ ($450^{\circ}C$), the $T_{10%}$ was observed at a much lower temperature of $263^{\circ}C$ in the first CO oxidation run, and at $247^{\circ}C$ in the second run. The CO oxidation activities of transition metal modified $TiO_2@SiO_2$ core-shell nanostructures presented herein provide new insights that will be useful in developing catalysts for various environments.

• Journal of Environmental Science International
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• v.11 no.6
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• pp.597-603
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• 2002

Photocatalytic degradation of phenol was carried out with UV-illuminated TiO$_2$-SiO$_2$ in aqueous suspension. TiO$_2$-SiO$_2$ catalysts were prepared by sol-gel method from the titanium isopropoxide and tetraethylorthosilicate at different Ti/Si ratio and some commercial TiO$_2$ catalysts were used as purchased. All catalysts were characterized by X-ray Diffraction(XRD) and BET surface area analyzer. The effect of reaction conditions, such as initial concentration of phenol, reaction temperature and catalyst weight on the photocatalytic activity was studied. In addition, TiO$_2$-SiO$_2$(49: 1) prepared by sol-gel method showed higher activity than commercial TiO$_2$catalysts on the photocatalytic degradation of phenol. The addition of SiO$_2$ into TiO$_2$hepled to increase the thermal stability of titania which suppressed the formation of anatase into rutile. The photocatalytic degradation of phenol showed pseudo-1st order reaction and the degradation rate increases with decreasing initial phenol concentration.

• Journal of the Korean Ceramic Society
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• v.39 no.4
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• pp.413-419
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• 2002

Particulate composites of $Al_2O_3$/TiC/SiC, $Al_2O_3$/TiC and $Al_2O_3$/SiC have been fabricated by hot pressing and their R-curve behaviors and mechanical properties were investigated. $Al_2O_3$ containing 30 vol% TiC particles showed higher toughness by 8% than that for monolithic alumina and its fracture strength was increased significantly by approximately 30%. On the other hand, the addition of 30 vol% SiC of $3{\mu}m$ in $Al_2O_3$ decreased the fracture strength slightly but induced a rising R-curve behavior owing to the strong crack bridging of SiC particles. In case of $Al_2O_3$/TiC/SiC, arising R-curve behavior was also observed and the fracture toughness reached 6.6 MPa${\cdot}\sqrt{m}$ at the crack length of $1000{\mu}m$, which was lower than that of $Al_2O_3$/SiC, however, while the fracture strength was higher by about 20%. The fracture toughness seemed to be decreased as smaller TiC particles roughened the SiC interface and pullout of the SiC particles for crack bridging became less active.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1097-1098
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• 2006

The Powder characteristics and sintering behavior of $SiO_2$ coated $BaTiO_3$ were studied. Silica coated $BaTiO_3$ powders were prepared by sol-gel method. The particle size of the $BaTiO_3$ powders were $\sim35$ nm and the thickness of the $SiO_2$ coating layer was $\sim5$ nm. As the $SiO_2$ content increased, the $SiO_2$ layers improved the powder dispersion. The Zeta potential of $SiO_2$ coated $BaTiO_3$ was getting close to that of pure silica with a more negative charge, compared with that of the uncoated $BaTiO_3$. The onset temperature of shrinkage curves shifted to higher temperatures with increasing $SiO_2$ contents

• Applied Chemistry for Engineering
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• v.7 no.6
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• pp.1034-1042
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• 1996

Various $TiO_2-SiO_2$ composite powders were prepared by the modified sol-gel method using 1-dodecanol as DCCA (Dryng Control Chemical Additive ). Their characterizations were carried out and their photocatalytic catalysis was examined on the evolution reaction of hydrogen. The weight losses at $500^{\circ}C$ of only $TiO_2$ and $SiO_2$ powders were 33. 0wt% and 42.5wt%, respectively, and those of the $TiO_2/SiO_2$ powders ($TiO_2/SiO_2=25/75$, 50/50 and 75/25) were about $70.0{\pm}3.0wt%$. The released substances from the powders were almost organic matters. The as-prepared powders except only $TiO_2$ powder were amorphous. Transformation of anatase to rutil was hindered by $SiO_2$ component and the crystallinity of anatase was decreased with increasing $SiO_2$ contents. The as-prepared powders were bulky states. By heating at $600^{\circ}C$ for 1 hr $TiO_2-SiO_2$ powders ($TiO_2=100%$, $TiO_2/SiO_2=75/25,\;50/50$) showed agglomerates consisted of particles in submicron, but those of $TiO_2/SiO_2=25/75$ and $SiO_2=100%$ were still bulky states. Specific surface area of the powders heat-treated at $600^{\circ}C$ for 1hr was increased with $SiO_2$ concents and their pore sizes were also depended on $SiO_2$ contents. The photocatalytic activity of $TiO_2/SiO_2=75/25$ heat-treated at $600^{\circ}C$ for 1hr was 0.240mo1/h.g-cat as $H_2$ evolution rate. This value was about 2.0 times that of P-25(Degussa P-25) as a standard photocatalyst.

• Journal of the Korean Chemical Society
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• v.44 no.1
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• pp.60-67
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• 2000

The wavelength of the surface plasmon absorption depends on the dielectric matrix. $TiO_2/SiO_2$ complex oxide films doped with Au nanoclusters were prepared by sol-gel spin-coating method using $Ti(OPr^i)_4$, $Si(OEt)_4$, and $HAuCl_4{\cdot}7H_2O$. The wavelength of the maximum absorption of Au nanoehrsters in the $TiO_2/SiO_2$ thin films was obtained with lineality from 540 nm to 615 nm depending on the molar ratio of $TiO_2$. The particle sizes and structures of these nanoclusters have been identified through a TEM and X-ray diffraction patterns. The dielectric constants of $TiO_2/SiO_2$ thin films were calculated from the experimental results.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.2
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• pp.37-42
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• 2000

The comparative study of texture of Al/Ti thin films deposited on low-dielectric polymer and $SiO_2$substrates has been investigated. Fifty-nm-thick Ti films and 500-nm-thick Al-1%Si-0.5%Cu (wt%) films were deposited sequentially onto low-k polymers and $SiO_2$by using a DC magnetron sputtering system. The texture of Al thin film was determined using X-ray diffraction (XRD) theta-2theta ($\theta$-2$\theta$) and rocking curve and the microstructure of Al/Ti films on low-k polymer and $SiO_2$substrates was characterized by cross-sectional transmission electron microscopy (TEM). Both the $\theta$-2$\theta$ method and rocking curve measurement suggest that Al/Ti thin films deposited on $SiO_2$have stronger texture than those deposited on low-k polymer. The texture of Al thin films strongly depended on that of Ti films. Cross-sectional TEM revealed that grains of Ti films on $SiO_2$substrates had grown perpendicular to the substrate, while the grains of Ti alms on SiLK substrates were formed randomly. The lower degree of (111) texture of Al thin films on low-k polymer was due to Ti underlayer.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.263-266
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• 2000

This paper is focused on the fabrication of reliable Al/$TiO_2-SiO_2$/Mo antifuse, which could operate at low voltage along with the improvement in on/off state properties. Mo metal as the bottom electrode had smooth surface and high melting point, and was being kept as-deposited $SiO_2$film stable. The breakdown voltage of TiO_2-SiO_2$ stacked antifuse was better than that of same-thickness (100 $\AA$) $SiO_2$antifuse because of Ti diffusion in $SiO_2$. The improving breakdown-voltage and on-resistance can be obtained as well as the influence of hillock in the bottom metal is reduced by using double insulator. Low on-resistance (65 $\Omega$) and low programming voltage (9.0 V) can be obtained in these antifuses with 250 $\AA$ double insulator.

• Journal of the Korean Ceramic Society
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• v.32 no.12
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• pp.1331-1336
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• 1995

The glass-ceramics for ferro-electric were made from compositions of 70PbO.16TiO2.8SiO2.4B2O3.2AlPO4 (wt%) and 67.5PbO.20TiO2.8.5SiO2.2B2O3.2AlPO4 (wt%). The crystallization kinetics for PbTiO3 crystalline phase formation from glass was studied using non-isothermal DSC techniques. The values of activation energy, ΔE using variables of heating rate and temperature were calculated at various reaction fractions obtained from peak area over DSC. The results indicated that activation energy was lowest at 60% reaction fractions and the activation energy of glass containing 20.0 wt% TiO2 is higher than that of glass containing 16.0 wt% TiO2. The crystallization mechanism was three dimensional growth (n=4).