• 멤브레인
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• 제21권2호
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• pp.127-140
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• 2011

본 연구에서는 정수처리용 세라믹 한외여과 및 광촉매의 혼성공정에서 $TiO_2$ 광촉매 코팅 구(bead)의 농도 및 물역세척 주기(FT), 물역세척 시간(BT) 변화의 영향을 알아보았다. 광촉매 코팅 구의 농도는 10~40 g/L로, FT는 2~10분으로, BT는 6~30초로 변화시키면서, 그 영향을 180분 운전 후 막오염에 의한 저항$(R_f)$, 투과선속(J)과 총여과부피$(V_T)$ 측면에서 고찰하였다. 광촉매 코팅 구의 농도가 감소할수록 $R_f$는 증가하고 J는 감소하였다. 광촉매 코팅 구의 농도 40 g/L 에서 $V_T$가 8.85 L로 가장 높았다. FT 변화 실험에서는 FT가 감소할수록, $R_f$는 감소하고 J는 증가하였다. 한편, BT 변화 실험에서는 BT가 증가할수록, $R_f$는 감소하고 J는 증가하였다. 또한, NBF(no back-flushing)에서 급격한 막오염에 의한 분리막 기공의 감소로 탁도 및 용존유기물($UV_{254}$ 흡광도)이 효과적으로 제거되었기 때문에, 탁도 및 용존유기물의 처리효율이 NBF 조건에서 가장 높았다. 한편, 광촉매 코팅 구의 세척 효과로 FT가 감소할수록, BT가 증가할수록 탁도 및 용존유기물의 처리효율은 증가하였다.

• 한국세라믹학회지
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• 제43권2호
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• pp.106-113
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• 2006

PMN-PZT films with thickness of $5\;{\mu}m$ were deposited on $Pt/Ti/SiO_2/Si$ substrate at room temperature using aerosol deposition process. The films showed fairly dense microstructure without any crack. XRD and TEM analysis revealed that the films consisted of randomly oriented nanocrystalline and amorphous phases. Post-annealing process was employed to induce crystallization and grain growth of the as-deposited films and to improve the electrical properties. The annealed film showed markedly improved electrical properties in comparison with as-deposited film. The film after annealing at $700^{\circ}C$ for 1h exhibited the best electrical properties. Dielectric constant $(\varepsilon_r)$, remanent polarization $(P_r)$ and piezoelectric constant $(d_{33})$ were 1050, $13\;{\mu}C/cm^2$ and 120 pC/N, respectively.

• 한국재료학회지
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• 제12권3호
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• pp.211-214
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• 2002

Properties of 52/48 PZT films with various thicknesses for piezoelectric micro-electro mechanical systems (MEMS) devices fabricated by multi-coating method on $Pt(3500{\AA})/Ti(400{\AA})/SiO_2(3000{\AA})/Si$(525$\mu\textrm{m}$) substrates were investigated. PZT films were deposited by spin-coating process at 3500 rpm for 30 sec, followed by pyrolysis at 45$0^{\circ}C$ for 10 min producing the thickness of about 120nm. These processes were repeated 4, 8, 12, 16 and 20 times in order to have various thicknesses, respectively. Finally, they were crystallized at $650^{\circ}C$ for 30 min. All thick PZT films showed dense and homogeneous surface microstructures. Thick PZT films showed crystalline structures of random orientations with increasing thickness. Dielectric constants of thick PZT films were increased with increasing film thickness and reached 800 at 100kHz for 2.3$\mu\textrm{m}$ thick PZT film. $P_r\; and\; E_c$ of 2.3$\mu\textrm{m}$ thick PZT films were about 20$\mu$C/$\textrm{cm}^2$ and 63kV/cm. Depth profile analysis by Auger Electron Spectroscopy (AES) of 4800 $\AA$ thick PZT film showed the formation of the perovskite phase on Pt layer by Pb diffusion behavior. It was considered that Pb-Pt intermediate layer promoted PZT (111) columnar structures.

• Macromolecular Research
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• 제17권5호
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• pp.296-300
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• 2009

Ethylene-1-butene copolymers were prepared with $SiO_2$-supported $TiCl_4$ catalyst by changing of 1-butene/ethylene molar ratio in feed, and the resulting copolymers were analyzed using temperature rising elution fractionation (TREF) and crystallization fractionation (Crystaf) methods to investigated the influence of $C_4/C_2$ molar ratio in feed on chemical compositional distribution and other parameters such as molecular weight and its distribution. TREF analysis showed that the copolymers had a broad and bimodal chemical compositional distribution (CCD) regardless of the content of 1-butene in the copolymer. The chemical composition was in the range of 5 to 55 branches per 1,000 carbons for all copolymers prepared in the study. Furthermore, the broader CCD was revealed for the copolymers having the higher content of 1-butene. Crystaf analysis did not showed a bimodal CCD for the copolymers having the 1-butene content of less than 5.1 wt%. The lower crytalline part having 1-butene content in Crystaf analysis was less than of TREF analysis.

• Tribology and Lubricants
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• 제19권4호
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• pp.203-210
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• 2003

In order to enhance the thermal stability of binder materials of bonded type solid lubricants, several metal-alkoxide based sol-gel materials such as methyltrimethoxysilane(MTMOS), titaniumisopropoxide (Ti(Opr$\^$i/)$_4$), zirconiumisopropoxide (Zr(Opr$\^$i/)$_4$) and aluminumbutoxide (Al(Obu$\^$t/)$_4$) were modified chemically by both epoxy and acrylic silane compounds. Friction and wear characteristics of the bonded solid lubricants, whose binders were of several hybrid ceramic materials, were tested with a reciprocating tribo-tester. Wear life was evaluated with respect to the heat-curing temperature, friction temperature, type of supplement lubricants, and ratio of binder materials. Test results showed that the Si-Zr hybrid ceramic materials modified by epoxy-silane compounds had a higher wear life compared to others. Sb$_2$O$_3$ was the most effective supplement lubricants in the high temperature, and BUS analyses revealed that it was caused mainly by a strong anti-oxidation effect to MoS$_2$ particles. The higher heat-curing temperature resulted in the higher wear life, and the higher friction temperature resulted in the lower wear life.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.148-148
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• 2011

일반적으로 LED 제작에 사용되는 c-plane GaN는 c축 방향으로 발생하는 분극의 영향을 받게 된다. 분극은 LED내 양자우물의 밴드를 기울게 하여 그 결과 전자와 홀의 재결합 확률을 감소시켜 낮은 내부양자효율을 가지게 된다. 이러한 문제를 해결하기 위한 여러 가지 방법들이 제시되었는데 그 중에서도 특히 a-plane 혹은 m-plane면과 같은 무분극 면을 사용하는 GaN LED가 주목받고 있다. 그 이유는 무분극 면은 분극이 발생하는 c축과 수직이기 때문에 분극의 영향을 받지 않아 높은 내부 양자효율을 가질수 있다. 본 연구에서는 MOCVD 장비를 사용하여 2인치 r-plane 사파이어 기판위에 3um두께의 a-plane GaN을 성장하였다. 그위에 2um정도로 Si을 도핑하여 n-type GaN 형성한후 단일 양자우물, 그리고 Mg을 도핑하여 p-type GaN을 성장하였다. 장파장대역의 a-plane LED의 특성을 알아보기 위해서 양자우물 형성시 In의 조성비를 높였다. 일반적인 포토리소그래피 공정과 Dry etching 공정을 사용하여 메사구조를 형성하였으며 Ti/Al/Pt/Au와 Ni/Au를 각각 n-type과 p-type의 전극 물질로 사용하였다. 제작된 LED의 특성을 파악하기 위해서 인가전류를 0부터 100mA까지 출력 스펙트럼을 측정하였으며 orange대역의 파장을 갖는 LED를 얻었다. 인가전류별 Peak 파장의 변화와 반측폭의 변화를 파악하여 장파장 대역의 a-plane LED의 특성을 확인하였다.

• 자원환경지질
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• 제56권3호
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• pp.239-257
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• 2023

상동 텅스텐(W)-몰리브덴(Mo) 광산은 태백산 광화대에 위치하는 스카른 광상으로, 광화 작용 최후기에 수직적 분포양상을 보이는 회중석-석영맥을 산출한다. 본 연구에서는 이 석영맥의 조직 관찰과 LA-ICPMS를 통한 석영의 미량원소 함량 분석을 통해 석영맥을 형성한 유체의 조성 및 이들의 침전 기작에 대해 파악하고자 하였다. 석영맥 조직 관찰 결과, 상동광산의 상반맥과 하반맥에서는 각각 괴상조직과 신장형 괴상조직이 주로 발달하고, 본맥에서는 두가지 조직이 모두 관찰된다. 이러한 석영맥의 조직적 특징으로 볼 때, 괴상조직을 나타내는 상반맥의 석영맥은 맥상스카른 형성 단계에서 화성암체의 H₂O 포화로 인한 수압 파쇄작용들 중 초기에 발생한 작용에 의해 침전되었고, 신장형 괴상조직을 나타내는 본맥과 하반맥의 석영맥은 상반맥의 석영맥 형성 이후 발생한 반복적 수압파쇄작용에 의해 형성된 것으로 생각된다. 석영의 미량원소 분석 결과 대부분 Li⁺ +Al³⁺↔Si⁴⁺의 치환관계를 만족하지만, 하반맥에서는 Li⁺이 우세하게 치환되는 경우와, Na⁺과 K⁺이 우세하게 치환되는 경우로 뚜렷하게 구분된다. 이는 하반맥의 신장형 괴상조직에 기반하여, 서로 다른 조성을 가지는 유체의 반복적 유입에 의한 결과로 해석된다. 석영의 Ti 함량은 상반맥, 본맥, 그리고 하반맥에서 각각 평균 28.6, 8.2, 그리고 15.7 ppm이며, 침전온도와 Ti 함량이 비례관계를 가진다는 점에서, 상반맥의 석영맥이 가장 고온환경에서 침전된 것으로 고려된다. 유체의 pH와 반비례관계를 가지는 석영의 Al 함량은 상반맥, 본맥, 그리고 하반맥에서 각각 평균 162.3, 114.2, 그리고 182.5 ppm으로 큰 차이를 보이지 않으며, 타 열수 광산들의 석영과 비교하여 매우 낮은 함량을 나타낸다. 이는 상동광산의 석영맥을 구성하는 석영 및 회중석이 약산성 내지 중성의 비교적 일정한 pH조건에서 침전되었음을 지시한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.96-97
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• 2012

In nitride and oxide film deposition, sputtered metals react with nitrogen or oxygen gas in a vacuum chamber to form metal nitride or oxide films on a substrate. The physical properties of sputtered films (metals, oxides, and nitrides) are strongly influenced by magnetron plasma density during the deposition process. Typical target power densities on the magnetron during the deposition process are ~ (5-30) W/cm2, which gives a relatively low plasma density. The main challenge in reactive sputtering is the ability to generate a stable, arc free discharge at high plasma densities. Arcs occur due to formation of an insulating layer on the target surface caused by the re-deposition effect. One current method of generating an arc free discharge is to use the commercially available Pinnacle Plus+ Pulsed DC plasma generator manufactured by Advanced Energy Inc. This plasma generator uses a positive voltage pulse between negative pulses to attract electrons and discharge the target surface, thus preventing arc formation. However, this method can only generate low density plasma and therefore cannot allow full control of film properties. Also, after long runs ~ (1-3) hours, depends on duty cycle the stability of the reactive process is reduced due to increased probability of arc formation. Between 1995 and 1999, a new way of magnetron sputtering called HIPIMS (highly ionized pulse impulse magnetron sputtering) was developed. The main idea of this approach is to apply short ${\sim}(50-100){\mu}s$ high power pulses with a target power densities during the pulse between ~ (1-3) kW/cm2. These high power pulses generate high-density magnetron plasma that can significantly improve and control film properties. From the beginning, HIPIMS method has been applied to reactive sputtering processes for deposition of conductive and nonconductive films. However, commercially available HIPIMS plasma generators have not been able to create a stable, arc-free discharge in most reactive magnetron sputtering processes. HIPIMS plasma generators have been successfully used in reactive sputtering of nitrides for hard coating applications and for Al2O3 films. But until now there has been no HIPIMS data presented on reactive sputtering in cluster tools for semiconductors and MEMs applications. In this presentation, a new method of generating an arc free discharge for reactive HIPIMS using the new Cyprium plasma generator from Zpulser LLC will be introduced. Data (or evidence) will be presented showing that arc formation in reactive HIPIMS can be controlled without applying a positive voltage pulse between high power pulses. Arc-free reactive HIPIMS processes for sputtering AlN, TiO2, TiN and Si3N4 on the Applied Materials ENDURA 200 mm cluster tool will be presented. A direct comparison of the properties of films sputtered with the Advanced Energy Pinnacle Plus + plasma generator and the Zpulser Cyprium plasma generator will be presented.

• 센서학회지
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• 제22권2호
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• pp.130-135
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• 2013

This study proposed a noble process to fabricate TSV (Through Silicon Via) structure which has lower cost, shorter production time, and more simple fabrication process than plating method. In order to produce the via holes, the Si wafer was etched by a DRIE (Deep Reactive Ion Etching) process. The via hole was $100{\mu}m$ in diameter and $400{\mu}m$ in depth. A dielectric layer of $SiO_2$ was formed by thermal oxidation on the front side wafer and via hole side wall. An adhesion layer of Ti and a seed layer of Au were deposited. Soldering process was applied to fill the via holes with solder paste and metal powder. When the solder paste was used as via hole metal line, sintering state and electrical properties were excellent. However, electrical connection was poor due to occurrence of many voids. In the case of metal powder, voids were reduced but sintering state and electrical properties were bad. We tried the via hole filling process by using mixing solder paste and metal powder. As a consequence, it was confirmed that mixing rate of solder paste (4) : metal powder (3) was excellent electrical characteristics.

• 한국표면공학회지
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• 제47권2호
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• pp.68-74
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• 2014

The seed step-coverage enhancement process (SSEP) using Pd/Cu/PVP colloids was investigated for the filling of through silicon via (TSV) without void. TEM analysis showed that the Pd/Cu nano-particles were well dispersed in aqueous solution with the average diameter of 6.18 nm. This Pd/Cu nano-particles were uniformly deposited on the substrate of Si/$SiO_2$/Ti wafer using electrophoresis with the high frequency Alternating Current (AC). After electroless Cu deposition on the substrate treated with Pd/Cu/PVP colloids, the adhesive property between deposited Cu layer and substrate was evaluated. The Cu deposit obtained by SSEP with Pd/Cu/PVP colloids showed superior adhesion property to that on Pd ion catalyst-treated substrate. Finally, by implementing the SSEP using Pd/Cu/PVP colloids, we achieved 700% improvement of step coverage of Cu seed layer compared to PVD process, resulting in void-free filling in high aspect ratio TSV.