• Journal of Korean Ophthalmic Optics Society
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• v.8 no.2
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• pp.111-117
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• 2003

We collected the domestic and foreign half-mirror coating lens for sunglasses. Their reflectance is measured using Spectrophotometer in order to analysis their optical property and the result which is calculated using Macleod program was compared with measured reflectance. In addition, we designed the new half-mirror coating lens with gold color using TiN material and investigated the optical property of the new half-mirror coating lens. The results obtained from analysis of half-mirror coating lenses are as follow : Two-tone half-mirror coating with silver color is fabricated with [air|$SiO_2$(or $Al_2O_3$)|Cr|glass]. The role of $SiO_2$(or $Al_2O_3$) on Cr improve the hardness of the lens and the thickness of the $Al_2O_3$ with 10 nm is good to show the lens silver color. Incase of color half-mirror coating lens. Blue system is designed by [air|$SiO_2$(66.3)|$TiO_2$(129.0)|$SiO_2$(62.9)|$SiO_2$(26.0)|$TiO_2$(120.3)|$SiO_2$(9.1)|glass], gold system [air|$SiO_2$(60.6)|$TiO_2$(86.2)|$SiO_2$(13.5)|$TiO_2$(86.8)|$SiO_2$(214.38)|glass], green system[air|$SiO_2$(74.3)|$TiO_2$(75.8)|$SiO_2$(44.3)|$TiO_2$(11.6)|$SiO_2$(160.8)|$TiO_2$(12.9)|$SiO_2$(183.3)|$TiO_2$(143.8)|glass], silver system[air|$SiO_2$(21.2)|$TiO_2$(49.7)|$SiO_2$(149.3)|glass]. White half-mirror coating lens has [air|$SiO_2$(17 nm)|$TiO_2$(43 nm)(or $ZrO_2$)|$SiO_2$(87 nm)|polysiloxane($4.46{\mu}m$|glass or CR-19]. It has half-mirror coaling lens which has about 19% reflectance and about 80% transmittance in the range of visible light(400~700nm). we designed the new half-mirror coating lens with gold color, the (x, y) value of the CIE is almost similar to the CIE value of [air|$SiO_2$(170 nm)|TiN(15 nm)|glass].

• Korean Journal of Materials Research
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• v.28 no.12
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• pp.758-762
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• 2018

The transfer characteristics of zinc tin oxide(ZTO) on silicon dioxide($SiO_2$) thin film transistor generally depend on the electrical properties of gate insulators. $SiO_2$ thin films are prepared with argon gas flow rates of 25 sccm and 30 sccm. The rate of ionization of $SiO_2$(25 sccm) decreases more than that of $SiO_2$(30 sccm), and then the generation of electrons decreases and the conductivity of $SiO_2$(25 sccm) is low. Relatively, the conductivity of $SiO_2$(30 sccm) increases because of the high rate of ionization of argon gases. Therefore, the insulating performance of $SiO_2$(25 sccm) is superior to that of $SiO_2$(30 sccm) because of the high potential barrier of $SiO_2$(25 sccm). The $ZTO/SiO_2$ transistors are prepared to research the $CO_2$ gas sensitivity. The stability of the transistor of $ZTO/SiO_2$(25 sccm) as a high insulator is superior owing to the high potential barrier. It is confirmed that the electrical properties of the insulator in transistor devices is an important factor to detect gases.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.2
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• pp.37-42
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• 2000

The comparative study of texture of Al/Ti thin films deposited on low-dielectric polymer and $SiO_2$substrates has been investigated. Fifty-nm-thick Ti films and 500-nm-thick Al-1%Si-0.5%Cu (wt%) films were deposited sequentially onto low-k polymers and $SiO_2$by using a DC magnetron sputtering system. The texture of Al thin film was determined using X-ray diffraction (XRD) theta-2theta ($\theta$-2$\theta$) and rocking curve and the microstructure of Al/Ti films on low-k polymer and $SiO_2$substrates was characterized by cross-sectional transmission electron microscopy (TEM). Both the $\theta$-2$\theta$ method and rocking curve measurement suggest that Al/Ti thin films deposited on $SiO_2$have stronger texture than those deposited on low-k polymer. The texture of Al thin films strongly depended on that of Ti films. Cross-sectional TEM revealed that grains of Ti films on $SiO_2$substrates had grown perpendicular to the substrate, while the grains of Ti alms on SiLK substrates were formed randomly. The lower degree of (111) texture of Al thin films on low-k polymer was due to Ti underlayer.

• Journal of the Korean institute of surface engineering
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• v.36 no.5
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• pp.406-412
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• 2003

FT-IR and thermography were used to investigate the infrared radiation characteristic of SiO$_2$ film and SiO$_2$/Fe$_2$O$_3$film coated on aluminum. Through FT-TR spectrum, SiO$_2$film showed high infrared absorption in accordance with the stretching vibration of Si-O-Si, and as$ Fe_2$$O_3$was mixed additional absorption band appeared resulting from the stretching vibration of Fe-O at $590cm^{-1}$ and the bond of Si-O-Fe at $900 cm^{-1}$ The two kinds of film measured by the integration method and the reflective method coincided with each other in the wavelength area of infrared absorption and radiation, and corresponded well with Kirchhoff's law as the infrared emissivity is high in wavelength where infrared absorption rate is high. The emissivity of $SiO_2$ film was 0.65 and that of $SiO_2$/Fe$_2$$O_3$film was 0.77, so the addition of$ Fe_2$$O_3$ raised the infrared emissivity by approximately 13%.$ SiO_2$$Fe_2$$O_3$ film is efficient as an infrared radiator at below $100^{\circ}C$. The temperature of heat radiation after 7 minutes was 117$^{\circ}C$ in aluminum plate and $155^{\circ}C$ in $SiO_2$$Fe_2$$O_3$ film, $38^{\circ}C$ higher than the former.

• Bulletin of the Korean Chemical Society
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• v.33 no.11
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• pp.3767-3771
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• 2012

In this study, we investigate the potential use of $TiO_2@SiO_2$ and $ZnO@SiO_2$ core/shell nanoparticles (NPs) as effective UV shielding agent. In the typical synthesis, $SiO_2$ was coated over different types of $TiO_2$ (anatase and rutile) and ZnO by sol-gel method. The synthesized $TiO_2@SiO_2$ and $ZnO@SiO_2$ NPs were characterized by UV-Vis, XRD, SEM and TEM. The UV-vis absorbance and transmittance spectra of core@shell NPs showed an efficient blocking effect in the UV region and more than 90% transmittance in the visible region. XRD and SAED studies confirmed the formation of amorphous $SiO_2$ coated over the $TiO_2$ and ZnO NPs. The FESEM and TEM images shows that coating of $SiO_2$ over the surface of anatase, rutile $TiO_2$ and ZnO NPs resulted in the increase in particle size by ~30 nm. In order to study the UV light shielding capability of the samples, photocatalytic degradation of methylene blue dye on $TiO_2@SiO_2$ and $ZnO@SiO_2$ NPs was performed. Photocatalytic activity for both types of $TiO_2$ NPs was partially suppressed. In comparison, the photocatalytic activity of ZnO almost vanished after the $SiO_2$ coating.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.67-67
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• 2000

CeO2는 cubic 구조의 일종인 CaR2 구조를 가지고 있으며 격자상수가 Si의 격장상수와 매우 비슷하여 Si 기판위에 에피텍셜하게 성장할 수 있는 가능성이 매우 크다. 따라서 SOI(silicon-on-insulator)구조의 실현을 위하여 Si 기판위에 CeO2 박막을 에피텍셜하게 성장시키려는 많은 노력이 있어왔다. 또한 metal-ferroelectric-semiconductor field effect transistor)에서 ferroelectric 박막과 Si 기판사이의 완충층으로 사용된다. 이러한 CeO2의 응용을 위해서는 Si 기판 위에 성장된 CeO2 박막의 방위성 및 CeO2/Si 구조의 전기적 특성을 알아보는 것이 매우 중요하다. 본 연구에서는 Si(100) 기판위에 CeO2(200)방향으로 성장하는 박막과 EcO2(111) 방향으로 성장하는 박막을 rf magnetron sputtering 방법으로 증착하여 각각의 구조적, 전기적 특성을 분석하였다. RCA 방법으로 세정한 P-type Si(100)기판위에 Ce target과 O2를 사용하여 CeO2(200) 및 CeO2(111)박막을 증착하였다. 증착후 RTA(rapid thermal annealing)방법으로 95$0^{\circ}C$, O2 분위기에서 5분간 열처리를 하였다 이렇게 제작된 CeO2 박막의 구조적 특성을 XRD(x-ray diffraction)방법으로 분석하였고, Al/CeO2/Si의 MIS(metal-insulator-semiconductor)구조를 제작하여 C-V (capacitance-voltage), I-V (current-voltage) 특성을 분석하였으며 TEM(transmission electron microscopy)으로 증착된 CeO2막과 Si 기판과의 계면 특성을 연구하였다. C-V특성에 있어서 CeO2(111)/Si은 CeO2(111)의 두께가 증가함에 따라 hysteresis windows가 증가한 방면 CeO2(200)/Si은 hysteresis windows가 아주 작을뿐만 아니라 CeO2(200)의 두께가 증가하더라도 hysteresis windos가 증가하지 않았다. CeO2(111)/Si과 CeO2(200)/Si의 C-V 특성의 차이는 CeO2(111)과 CeO2(200)이 Si 기판에 의해 받은 stress의 차이와 이에 따른 defect형성의 차이에 의한 것으로 사료된다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.118-119
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• 2007

Phase stability and morphological investigation on the $Si/SiO_2/HfO_2$ and $Si/SiO_2/ZrO_2$ stack are presented. Thermal stability of $HfO_2$ and $ZrO_2$ determines the quality of interface and subsequently the performance of device. The stacks have been fabricated and annealed at $1000^{\circ}C$ for various time. In evolution of crystalline phase and morphology (electrical and geometrical) of high-k materials, annealing time and process are observed to be crucial factors. The crystallization of some phase has been observed in the case of $Si/SiO_2/HfO_2$. The chemical environment around Zr and Hf in respective samples is observed to be different.

• Bulletin of the Korean Chemical Society
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• v.32 no.11
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• pp.3991-3995
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• 2011

$TiO_2-SiO_2-In_2O_3$ nanocomposite thin film was deposited on the glass substrates using a dip coating technique. The morphology, surface composition, surface hydroxyl groups, photocatalytic activity and hydrophilic properties of the thin film were investigated by AFM, XPS, methyl orange decoloring rate and water contact angle measurements. The hydroxyl content for $TiO_2$, $TiO_2-SiO_2$ and $TiO_2-SiO_2-In_2O_3$ nanocomposite films was calculated to be 11.6, 17.1 and 20.7%, respectively. $TiO_2-SiO_2-In_2O_3$ film turned superhydrophilic after 180-min irradiation with respect to pure $TiO_2$ and $TiO_2-SiO_2$ thin films. The photocatalytic decomposition of methyl orange for $TiO_2$, $TiO_2-SiO_2$ and $TiO_2-SiO_2-In_2O_3$ thin films was measured as 38.19, 58.71 and 68.02%, respectively. The results indicated that $SiO_2$ and $In_2O_3$ had a significant effect on the hydrophilic, photocatalytic and self-cleaning properties of $TiO_2$ thin film.

• Journal of the Korean institute of surface engineering
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• v.28 no.6
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• pp.386-392
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• 1995

The RF planar magnetron sputtering technique was used to fabricate uniform ZnO/$SiO_2$/Si thin films at high growth rate. A detailed crystallographic character of these thin films has been carried oct using XRD, XRC, and SEM. These thin films have the configuration of c-axis orientation perpendicular to $SiO_2$/ Si substrate. The dependence of the thickness of ZnO/$SiO_2$/Si films on applied RF power parameters was also investigated. The crystallinity of films was improved as the substrate temperature was high, RF input power increased, and Ar/$O_2$ ratio decreased. Also, most of ZnO films fabricated on $SiO_2$/Si were suitable for SAW filter since a standard deviation of XRC (002) peak was less than $6^{\circ}$. The presence of the $SiO_2$ layer has a beneficial effect on the crystalline quality of the grown ZnO films.

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.130-137
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• 2008

$La_{0.7}Sr_{0.3}MnO_3$ films were deposited on $SiO_2$/Si and Si substrates annealed at $350^{\circ}C$ by rf magnetron sputtering. The oxygen gas flow rates were varied as 0, 40, and 80 sccm. Without post annealing process, $La_{0.7}Sr_{0.3}MnO_3$ thin films on $SiO_2$/Si and Si substrates were polycrystalline with (100), (110), and (200) growth planes. The grain size of $La_{0.7}Sr_{0.3}MnO_3$ thin films was increased with increasing oxygen gas flow rate. The sheet resistance of $La_{0.7}Sr_{0.3}MnO_3$ thin films was decreased with oxygen flow rate due to the increased grain size which induced a reduction of grain boundary. TCR (temperature coefficient of resistance) values of $La_{0.7}Sr_{0.3}MnO_3$ thin films were obtained from -2.0% to -2.2%.