• Journal of the Korean Ceramic Society
• /
• v.28 no.9
• /
• pp.675-682
• /
• 1991

Among many problems that need to be solved in the process of preparing multilayer chip LC filters, we studied the control of shrinkage in order to prevent the crack, warpage, and/or delamination which occurs at the interface between the inductance (L part) and the capacitance (C part). Shrinkage was controlled by compositions, powder size, calcining temperature and amount of organic binder. Capacitance sheet was prepared by mixing 65 wt% binder with the composition of 96 wt% TiO2 having an average particle size of 0.5 $\mu\textrm{m}$, 3 wt% CuO. After small amount of MnO2 and SiO2 added, it was calcined at 750$^{\circ}C$ for 2 hr. Inductance sheet was prepared by mixing 60 wt% binder with the composition of 49.5% mol% Fe2O3, 20.5 mol% ZnO, 20 mol% NiO and 10 mol% CuO which was calcined at 775$^{\circ}C$ for 2 hr. These sheets was laminated at 250 kg/$\textrm{cm}^2$, and cofired at 900$^{\circ}C$ for 2 hr to give rise to a multilayer chip LC filter without any warpage.

• Journal of the Korean Vacuum Society
• /
• v.14 no.2
• /
• pp.78-83
• /
• 2005

Nanometric crystalline silicon (no-Si) embedded in dielectric medium has been paid attention as an efficient light emitting center for more than a decade. In nc-Si, excitonic electron-hole pairs are considered to attribute to radiative recombination. However the surface defects surrounding no-Si is one of non-radiative decay paths competing with the radiative band edge transition, ultimately which makes the emission efficiency of no-Si very poor. In order to passivate those defects - dangling bonds in the $Si:SiO_2$ interface, hydrogen is usually utilized. The luminescence yield from no-Si is dramatically enhanced by defect termination. However due to relatively high mobility of hydrogen in a matrix, hydrogen-terminated no-Si may no longer sustain the enhancement effect on subsequent thermal processes. Therefore instead of easily reversible hydrogen, phosphorus was introduced by ion implantation, expecting to have the same enhancement effect and to be more resistive against succeeding thermal treatments. Samples were Prepared by 400 keV Si implantation with doses of $1\times10^{17}\;Si/cm^2$ and by multi-energy Phosphorus implantation to make relatively uniform phosphorus concentration in the region where implanted Si ions are distributed. Crystalline silicon was precipitated by annealing at $1,100^{\circ}C$ for 2 hours in Ar environment and subsequent annealing were performed for an hour in Ar at a few temperature stages up to $1,000^{\circ}C$ to show improved thermal resistance. Experimental data such as enhancement effect of PL yield, decay time, peak shift for the phosphorus implanted nc-Si are shown, and the possible mechanisms are discussed as well.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.49 no.2
• /
• pp.98-102
• /
• 2000

Ferroelectric PZT heterolayered thin films were fabricated by spin coating method on the Pt/Ti/SiO2/Si substrate using PZT(10/90) and PZT(90/10) m7etal alkoxide solutions. All PZT heterolayered films showed a homogeneous grain structures without presence of rosette structure. It can be assumed that the lower PZT layers played a role of nucleation site for the formation of the upper PZT layer. Pb-deficient PZT phase was formed at PZT/Pt interface due to the diffusion of Pb element into a Pt bottom electrode. The relative dielectric constant and the dielectric loss of the PZT-6 film were 567 and 3.6%, respectively. Increasing the number of coatings, remanent polarization and coercive field were decreased and the values of the PZT-6 heterolayered film were $7.18\muC/cm^2$ and 68.5kV/cm, respectively. Leakage current densities were increased with increasing the number of coatings, and the value of the PZT-4 film was about $7\times10-8A/cm^2$ at 0.05MV/cm.

• Composites Research
• /
• v.33 no.5
• /
• pp.235-240
• /
• 2020

In this study, in order to improve the impact resistance of the B₄C tile-inserted B₄C_p/Al7075 hybrid composite, a control method of the B₄C/Al7075 interface was developed and the characteristics of the controlled interface were analyzed. B₂O₃, Ni, and Si were coated on the B₄C tile surface using additional thermal oxidation, electroless plating, and plasma spraying. The coated B₄C tile is inserted into the B₄C_p/Al7075 composite material using the liquid pressurization method. Interfacial energy, bonding strength, and impact resistance were measured to analyze the effect of the coating. All coatings enhanced interfacial energy, bonding strength, and impact resistance, and in particular, it was confirmed that the impact resistance increased by 86.8% when B₂O₃ coating was used. This study is significant in developing and analyzing a core surface treatment method that improves the performance of B₄C/Al series composites, which are attracting attention as next-generation lightweight amour and bulletproof materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.9
• /
• pp.693-696
• /
• 2011

Recently, amorphous oxide semiconductors (AOSs) based thin-film transistors (TFTs) have received considerable attention for application in the next generation displays industry. The research trends of AOSs based TFTs investigation have focused on the high device performance. The electrical properties of the TFTs are influenced by trap density. In particular, the threshold voltage ($V_{th}$) and subthreshold swing (SS) essentially depend on the semiconductor/gate-insulator interface trap. In this article, we investigated the effects of Ar plasma-treated $SiO_2$ insulator on the interfacial property and the device performances of amorphous indium gallium zinc oxide (a-IGZO) TFTs. We report on the improvement in interfacial characteristics between a-IGZO channel layer and gate insulator depending on Ar power in plasma process, since the change of treatment power could result in different plasma damage on the interface.

• Korean Journal of Materials Research
• /
• v.11 no.8
• /
• pp.671-678
• /
• 2001

All solid-state thin film micro supercapacitor, which consists of $RuO_2$/LiPON/$RuO_2$ multi layer structure, was fabricated on Pt/Ti/Si substrate using a $RuO_2$ electrode. Bottom $RuO_2$ electrode was grown by dc reactive sputtering system with increasing $O_2/[Ar+O_2]$ ratio at room temperature, and a LiPON electrolyte film was subsequently deposited on the bottom $RuO_2$ electrode at pure nitrogen ambient by rf reactive sputtering system. Room temperature charge-discharge measurements based on a symmetric $RuO_2$/LiPON/$RuO_2$ structure clearly demonstrates the cyclibility dependence on the microstructure of the $RuO_2$ electrode. Using both glancing angle x-ray diffraction (GXRD) and transmission electron microscopy (TEM) analysis, it was found that the microstructure of the $RuO_2$ electrode was dependent on the oxygen flow ratio. In addition, x- ray photoelectron spectroscopy(XPS) examination shows that the Ru-O binding energy is affected by increasing oxygen flow ratio. Furthermore, TEM and AES depth profile analysis after cycling demonstrates that the interface layer formed by interfacial reaction between LiPON and $RuO_2$ act as a main factor in the degradation of the cyclibility of the thin film micro-supercapacitor.

• 한국연소학회:학술대회논문집
• /
• 2015.12a
• /
• pp.73-74
• /
• 2015

Synthesis gas such as hydrogen and carbon monoxide was produced from $CH_4/oxygen$ mixture using insulated pressurized porous media combustor. Experimentally, two cylindrical SiC foams with the different pore density were piled up in a quartz tube and fully premixed mixture was supplied in the axial direction. After stabilizing fuel-rich flame at the interface of the two foams at several pressure conditions, mole fractions of synthesis gases were measured by gas chromatography. Heat recirculation through the inner foam structure could extend the flow velocity of stable region over the laminar burning velocity. As the pressure increased, the rich flammability limit, $H_2/CO$ ratio, and module M increased.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.1 no.3
• /
• pp.158-166
• /
• 2001

Based on uniform hot carrier injection (optically assisted electron injection) across the $Si-SiO_2$ interface into the gate insulator of n-channel IGFETs, the threshold voltage shifts associated with electron injection of $1.25{\times}l0^{16}{\;}e/\textrm{cm}^2 between 0.5 and 7 MV/cm were found to decrease from positive to negative values, indicating both a decrease in trap cross section ($E_{ox}{\geq}1.5 MV/cm$) and the generation of FPC $E_{ox}{\geq}5{\;}MV/cm$). It was also found that FNC and large cross section NETs were generated for $E_{ox}{\geq}5{\;}MV/cm$. Continuous, uniform low-field (1MV/cm) electron injection up to $l0^{19}{\;}e/\textrm{cm}^2 is accompanied by a monatomic increase in threshold voltage. It was found that the data could be modeled more effectively by assuming that most of the threshold voltage shift could be ascribed to generated bulk defects which are generated and filled, or more likely, generated in a charged state. The injection method and conditions used in terms of injection fluence, injection density, and temperature, can have a dramatic impact on what is measured, and may have important implications on accelerated lifetime measurements.

• Journal of Adhesion and Interface
• /
• v.8 no.1
• /
• pp.15-27
• /
• 2007

Polyimide (PI) surface modification was carried out by ion-beam treatment and silane-imidazole coupling agent to improve the adhesion between polyimide film and copper. Silane-imidazole coupling agent contains imidazole functional groups for the formation of a complex with copper metal through a coordination bonding and methoxy silane groups for the formation of siloxane polymers. The PI film surface was first treated by argon (Ar)/oxygen ($O_2$) ion-beam, followed by dipping it into a modified silane-imidazole coupling agent solution. The results of X-ray photoelectron spectroscopy (XPS) spectra revealed that the $Ar/O_2$ plasma treatment formed oxygen functional groups such as hydroxyl and carbonyl groups on the polyimide film surface and confirmed that the PI surface was modified by a coupling reaction with imidazole-silane coupling agent. Adhesion between copper and the treated PI film by ion-beam and coupling agent was superior to that with untreated PI film. In addition, adhesion of PI film treated by an $Ar/O_2$ plasma to copper was better than that of PI film treated by a coupling agent. The peeled-off layers from the copper-PI film joint were completely different in chemical composition each other. The layer of PI film side showed similar C1s, N1s, O1s spectra to the original Upilex-S and no Si and Cu atoms appeared. On the other hand the layer of copper side showed different C1s and N1s spectra from the original PI film and many Si and Cu atoms appeared. This indicates that the failure occurs at an interface between the imidazole-silane and PI film layers rather than within the PI layers.

• Journal of the Korean Magnetics Society
• /
• v.11 no.5
• /
• pp.189-195
• /
• 2001

We prepared TMR junctions of NiFe(170 )/CoFe(48 )/Al(13 )-O/CoFe(500 )/Ta(50 ) structure on 2.5$\times$2.5 $\textrm{cm}^2$ area Si/SiO$_2$ substrates in order to investigate the uniformity of magnetoresistance(MR) value using a ICP magnetron sputter. Each layer was deposited by the ICP magnetron sputter and tunnel barrier was formed by the plasma oxidation method. We measured MR ratio and resistance of TMR devices with four-terminal probe system by applying external magnetic field. Although we used ICP sputter which is known as superior to make uniform films, the standard variation of MR ratio was 2.72. The variation was not dependent on the TMR devices location of a substrate. We found that MR ratio and spin-flip field (H's) increased as the resistance increased, which may be caused by local interface irregularity of the insulating layer. The variation of resistance value was 64.19 and MR ratio was 2.72, respectively. Our results imply that to improve the insulating layer fabrication process including annealing process to lessen interface modulation in order to mass produce the TMR devices.