• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.8
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• pp.764-768
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• 2006

For the possible application of pearl pigment, multi-layered $TiO_2/Al,\;Cr/TiO_2$ thin film were deposited on $SiO_2$ substrate by using sputtering method, $TiO_2$ and Al or Cr was selected as a possible high and low refraction material at the film interface respectively. Optical properties including color effect were systematically studied in terms of different film thickness and film layers by using spectrometer. In order to expect the experimental results, the simulation program, the Essential Macleod Program(EMP) was adopted and compared with the experimental data. The film consisting of $TiO_2/Al,\;Cr/TiO_2$ layers shows a wavelength range of $430{\sim}760nm$, typically color ranges between bluish purple and red. It was confirmed that this experimental result was quite well consistent with the experimental one.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.3 s.345
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• pp.1-8
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• 2006

In this paper, reliability (HCI, NBTI) and device performance of nano-scale CMOSFETs with different channel stress were investigated. It was shown that NMOS and PMOS performances were improved by tensile and compressive stress, respectively, as well known. It is shown that improved device performance is attributed to the increased mobility of electrons or holes in the channel region. However, reliability characteristics showed different dependence on the channel stress. Both of NMOS and PMOS showed improved hot carrier lifetime for compressive channel stress. NBTI of PMOS also showed improvement for compressive stress. It is shown that $N_{it}$ generation at the interface of $Si/SiO_2$ has a great effect on the reliability. It is also shown that generation of positive fixed charge has an effect in the NBTI. Therefore, reliability as well as device performance should be considered in developing strained-silicon MOSFET.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.4 s.33
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• pp.87-91
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• 2004

We have investigated the effects of W-N/Pt bottom electrode on the ferroelectric degradation of $Sr_{0.8}Bi_{2.4}Ta_2O_9(SBT)/Pt$ due to hydrogen annealing at $350^{\circ}C$ in $N_2$ gas atmosphere containing $5{\%}\;H_2$ gas for 1hr. As a result, inserting the W-N thin films between SBT and Pt, this W-N thin film prevents hydrogen molecules to be chemisorbed at the Pt electrode surface of at the electrode/ferroelectric interface during hydrogen annealing. These hydrogen atoms can diffuse into the SBT and react with the oxide causing the oxygen deficiency in the SBT film, which will result in the ferroelectric degradation. Experimental results show that W-N thin film is a good diffusion barrier during the hydrogen annealing.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1997.10a
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• pp.183-190
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• 1997

The wear behaviors of $Al_2O_3-40%TiO_2$ deposited on casting aluminum alloy(ASTM A356) by plasma spray against SiC ball have been investigated experimentally. Friction and wear tests are carried out at room temperature. The friction coefficient of $Al_2O_3-40%TiO_2$ coating is lower than that of pure $Al_2O_3$ coating(APS). It is found that low friction correspond to low wear and high friction to high wear in the experimental result. The thickness of $Al_2O_3-40%TiO_2$ coatings indicated the existence of the optimal coating thickness. It is found that a voids and porosities of coating surface result in the crack generated. As the tensile stresses in coating increased with the increased friction coefficient. The columnar grain of coating will be fractured to achieve the critical stress. It is found that the cohesive of splats and the porosity of surface play a role in wear characteristics. It is suggested that the mismatch of thermal expansion of substrate and coating play an important role in wear performance. Tensile and compressire under thermo-mechanical stress may be occurred by the mismatch between thermal expansion of substrate and coating. This crack propagation above interface is observed in SEM.

• Tribology and Lubricants
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• v.15 no.1
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• pp.39-45
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• 1999

The wear behavior of $Al_2$O$_3$-40%TiO$_2$deposited on casted aluminum alloy (ASTM A356) by APS (Air Plasma Spray) against SiC ball has been investigated in this work. Wear tests were carried out at room temperature. The friction coefficient of $Al_2$O$_3$-40%TiO$_2$coating is lower than that of pure $Al_2$O$_3$coating(APS). $Al_2$O$_3$-40%TiO$_2$coating indicated the existence of the optimal coating thickness. It is found that voids and pores of coating surface resulted in the generation of cracks, and the cohesive of splats and the porosity of surface play a role in wear characteristics. It is suggested that the mismatch of thermal expansion of substrate and coating play an important role in wear performance. Tension and compression under thermo-mechanical stress may be occurred by the mismatch between thermal expansion of substrate and coating. The crack propagation above interface is observed in SEM.

• Resources Recycling
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• v.14 no.5 s.67
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• pp.13-17
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• 2005

As a basic study for recycling molten converter slag as an ordinary portland cement (OPC) by a conversion process, the reaction mechanism and the rate of the formation of $C_4AF$ which is one of the main components of OPC were investigated. The converter slag whose basicity was controlled by adding reagent grade $SiO_2$ was melted and hold for 30 minutes in MgO crucible at $1300^{\circ}C{\sim}1350^{\circ}C$. Then, the sintered CaO pellet heated at the same temperature was dipped into the molten slag and hold for $10{\sim}30$minutes. After the reaction, the crucible was cooled in air and the specimen was cut off to the horizontal direction of the crucible. The dissolution rate of $C_3A$ pellet was measured by the change of radius of the sintered $C_3A$ pellet, and the formed phase of $C_4AF$ was observed by SEM/EDX. As a result, the dissolution rate of $C_3A$ pellet into molten slag was increased from $0.75{\times}10^{-4}(cm/sec)$ at $1300^{\circ}C$ to $1.67{\times}10^{-4}(cm/sec)$ at $1350^{\circ}C$, and the mixed layer of $C_4AF$ and $C_{12}A_7$ was found between slag and $C_3A$ pellet.

• Transactions on Electrical and Electronic Materials
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• v.12 no.1
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• pp.32-34
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• 2011

A zero-shrinkage sintering process in which the shrinkage of the x-y axis is controlled to be zero is in great demand due to the high integration trend in ceramic modules. Among the zero-shrinkage sintering processes available, the glass infiltration method proposed in the preliminary study with an $Al_2O_3/Glass/Al_2O_3$ structure is one promising method. However, problems exist in regard to the glass infiltration method, including partially incomplete joining between $Al_2O_3$ and glass layers due to the precipitate of Ti-Pb rich phase during the sintering process. Therefore, we wish to solve the de-lamination problems and suggest a mechanism for delamination and the solutions in the zero-shrinkage low temperature co-fired ceramic (LTCC) layers. The de-lamination problems diminished using the Pb-BSi-O glass without $TiO_2$ in Pb-B-Ti-Si-O glass and produced a very dense zero-shrinkage LTCC.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.05a
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• pp.105-110
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• 2008

We have proposed a new structure of poly-silicon thin film transistor(TFT) which was fabricated the LDD region using doping oxide with graded spacer by etching shape retio. The devices of n-channel poly-si TFT's hydrogenated by $H_2$ and $HT_2$/plasma processes are fabricated for the devices reliability. We have biased the devices under the gate voltage stress conditions of maximum leakage current. The parametric characteristics caused by gate voltage stress conditions in hydrogenated devices are investigated by measuring /analyzing the drain current, leakage current, threshold voltage($V_{th}$), sub-threshold slope(S) and transconductance($G_m$) values. As a analyzed results of characteristics parameters, the degradation characteristics in hydrogenated n-channel polysilicon TFT's are mainly caused by the enhancement of dangling bonds at the poly-Si/$SiO_2$ interface and the poly-Si Brain boundary due to dissolution of Si-H bonds. The structure of novel proposed poly-Si TFT's are the simplity of the fabrication process steps and the decrease of leakage current by reduced lateral electric field near the drain region.

• Journal of the Korean Electrochemical Society
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• v.9 no.1
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• pp.6-9
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• 2006

The effect of $ZrO_2$-coating on the electrochemical properties of the cathode material $LiNi_{0.8}Co_{0.2}O_2$ was investigated using EPMA, TEM, and EIS. In particular, we facused on the distribution of the $ZrO_2$ on the particle surface to study the relation between electrochemical properties of the coated cathode and the distribution of the coating materials in the particle. Based on the results from the composition analysis and electrochemical tests, it was found that the coating layer consisted of nano-sized $ZrO_2$ particles attached non-uniformly on the particle surface and the $ZrO_2$ layer significantly improved the electrochemical properties of the cathode by suppressing the impedance growth at the interface between the electrodes and the electrolyte.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.197.2-197.2
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• 2014

그래핀(graphene)의 라만 스펙트럼은 전하밀도(charge density)와 기계적 변형(strain)에 민감하여 연구에 널리 활용되고 있다. 본 연구에서는 기계적 박리법으로 만든 그래핀에 황산 수용액으로 p-형 화학도핑(chemical doping)을 유발시키고 전하밀도의 변이에 따른 라만 스펙트럼의 변화를 조사하였다. 이러한 변화를 통해 황산과 물 분자의 계면 확산을 이해하고, $SiO_2/Si$ 기판의 화학적 특성이 미치는 영향을 파악하고자 하였다. 분자의 효율적인 계면 확산을 위해 고온 산화반응을 이용하여 그래핀의 기저면에 나노공(nanopore)을 만든 후, 액상에서 라만 스펙트럼을 측정하였다. 증류수 속에 담궜을 때 물 분자가 그래핀-기판 계면 사이로 확산되면서 열처리에 의해 유발된 정공이 사라짐을 확인하고, D-봉우리의 가역적인 변화로부터 그래핀의 구조적 변화를 유추하였다. 황산 농도를 증가시켰을 때 G와 2D-봉우리의 진동수가 상호간에 일정한 비율로 증가하여 정공의 밀도가 증가함 알 수 있었다. 동일한 시료에 대해 황산의 농도를 감소시킴으로써 p-형 도핑을 제거하고 동일한 반응을 가역적으로 반복할 수 있었다. 상기한 분자의 2차원 확산 현상은 나노공의 유무와 기판의 전처리 조건에 따라 크게 달라진다는 사실을 확인 할 수 있었다. 또한 여러 파장에서 측정된 전하밀도와 기계적 변형에 의한 G와 2D-봉우리의 진동수 변화로부터 다른 연구자들이 활용할 수 있는 검정곡선을 제시하였다.